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  • Articles  (41,337)
  • 1995-1999  (41,337)
  • Electrical Engineering, Measurement and Control Technology  (41,337)
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  • Articles  (41,337)
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  • 1
    Electronic Resource
    Electronic Resource
    Ion transfer processes in an insulating layer containing traps (1997)
    Springer
    Semiconductors 31 (1997), S. 36-40 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstrect A theory of ion transfer processes in an insulating layer containing a uniform distribution of traps throughout its volume is formulated. It is shown that free ions localized near the surface are held in a potential well created by repulsion from trapped carriers. Accordingly, the activation energy of the free-ion current is higher than the mobility activation energy and decreases as the voltage is increased, while detrapping takes place with a time delay. The temperature dependence of the depolarization current has two or three peaks, whose positions and profiles change with the voltage. A distinctive feature of the transfer of ions through an insulator containing traps is the “memory” of the electric field driving the carriers toward the surface prior to the start of the transfer process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187048
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  • 2
    Electronic Resource
    Electronic Resource
    Molecular effect in the implantation of light ions in semiconductors (1997)
    Springer
    Semiconductors 31 (1997), S. 999-1002 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The accumulation of structural defects in Si during the implantation of monatomic and diatomic nitrogen ions under equivalent conditions, i.e., at the same energies per atom and flux densities of the atoms, is investigated. The molecular effect in the accumulation of defects is observed only at doses for which the damage level in the crystal lattice exceeds 0.15. Under these conditions each N 2 + ion creates the same number of stable defects as do six N 1 + ions. In our experiments (30 keV for N 1 + and 60 keV for N 2 + at room temperature) the amorphization doses are equal to 3.75×1015 and 1.25×1015 ions/cm2 for N 1 + and N2/+, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187012
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  • 3
    Electronic Resource
    Electronic Resource
    Hole boil-off and the magnetoresitance of the semimagnetic semiconductor Hg1−x MnxTe1−y Sey (1997)
    Springer
    Semiconductors 31 (1997), S. 1030-1036 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Galvanomagnetic effects were investigated in gapless and narrow-gap semiconductors of the form Hg1−x MnxTe1−y Sey with x=0.03–0.11, y=0.01–0.10 (−150〈ɛ g 〈190)meV and acceptor concentration 5.4×1016〈N A 〈4.3×1018 cm−3. In magnetic fields H=5–50 kOe and at T=1.3–4.2 K, the observed hole concentration p=1/eR was found to increase by a substantial factor (of up to 500). This was accompanied by a fall in the longitudinal (ρ zz ) and transverse (ρ xx ) magnetoresistivities. The hole “boil-off” is assumed to be a consequence of the existence at H=0 of a bound magnetic polaron and the delocalization of carriers when these states are destroyed by the external magnetic field. The anomalous ratio of longitudinal-to-transverse resistivities (ρ zz 〉ρ xx ), observed at liquid-helium temperatures and in magnetic fields H〉10 kOe, is explained in terms of the properties of the energy spectrum of the valence band of semimagnetic semiconductors in quantizing magnetic fields.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187019
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  • 4
    Electronic Resource
    Electronic Resource
    Formation of radiation defects in high-resistivity silicon as a result of cyclic irradiation and annealing (1997)
    Springer
    Semiconductors 31 (1997), S. 189-193 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Transformation of radiation-induced defects in p +-n-n + structures fabricated from highresistivity n-type silicon subjected to cyclic irradiation and annealing is investigated. The kinetic behavior of the increase in the concentration of the Ci-Oi defects is analyzed as a function of the detector fabrication process. During the second irradiation cycle a transformation of the defects, which were formed as a result of annealing of the original radiation defects, is observed. The appearance of “hidden” sources of deep center formation is revealed. It is established that the presence of a higher oxygen concentration, which arises in the samples as a result of the extended silicon oxidation process, results in a more active complex-formation of carbon-containing defects in comparison with samples with reduced oxygen content.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187105
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  • 5
    Electronic Resource
    Electronic Resource
    Photosensitivity of InP/CdS heterostructures in linearly polarized light (1997)
    Springer
    Semiconductors 31 (1997), S. 194-196 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Measurements have been made of the photosensitivity of (p + -p −)-InP/n +-CdS structures formed by the growth of indium phosphide and cadmium sulfide films on p +-InP substrates with (100) crystallographic orientation. These structures exhibit a photosensitivity S i ⋍0.13A/W in the spectral range from 1.3 to 2.4 eV at T=300 K. Polarizational photosensitivity was observed for oblique incidence of linearly polarized light on the CdS surface of these structures. The induced photopleochroism of these structures is governed by the angle of incidence θ. The photopleochroism increases proportionally to θ2 and its maximum value is found to be ∼50% at θ⋍75–80°. The maximum azimuthal photosensitivity was found to be ∼0.13A/W·deg. Structures consisting of CdS deposited on InP can be used as polarimetric photodetectors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187106
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of electron irradiation on the electrical properties of n-type Pb1−x SnxTe (x⋍2) alloys (1997)
    Springer
    Semiconductors 31 (1997), S. 214-217 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The effect of electron bombardment (T in⋍300 K, E=6 MeV, Φ⩽4×1017 cm−2) on the electrical properties of n-type Pb1−x SnxTe has been studied. Electron bombardment decreases the electron concentration and produces conductivity-type n-p conversion. The difference rate of the donor-and acceptor-type defect generation as a result of bombardment has been determined. Anomalies are detected in the temperature and magnetic-field dependences of the electrical parameters of the bombardment samples. These anomalies are associated with the appearance of a hole-enriched surface layer as a result of electron bombardment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187114
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  • 7
    Electronic Resource
    Electronic Resource
    Structural perfection of epitaxial layers of 3C-SiC grown by vacuum sublimation on 6H-SiC substrates (1997)
    Springer
    Semiconductors 31 (1997), S. 232-236 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract This paper discusses how the processing parameters affect the structural perfection of epitaxial layers of 3C-SiC grown on 6H-SiC substrates by vacuum sublimation. It shows that, at constant temperature and using virtually undisoriented substrates, decreasing the growth rate increases the size of the twinning regions in the films and reduces the total defect concentration of the 3C/6H structures. Epitaxial layers of 3C-SiC with a defect density of 101–102 cm−2 and a twinning area of up to 6 mm2 have been obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187112
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  • 8
    Electronic Resource
    Electronic Resource
    Scaling in the regime of the quantum Hall effect and hole localization in p-Ge/Ge1−x Six heterostructures (1997)
    Springer
    Semiconductors 31 (1997), S. 222-227 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract For multilayer Ge/Ge1−x Six (x⋍0.03) heterostructures with two-dimensional p-type conductivity over the Ge layers, the temperature and magnetic dependences of the longitudinal resistivity ρ xx and the Hall resistivity ρ xy have been studied in fields up to 12 T in the temperature interval of T=(0.1–15) K. The observed decrease of the amplitude of the ρ xx peaks with decreasing temperature for T⩽2 K corresponds to a transition to the scaling regime under the conditions of the quantum Hall effect. Scaling diagrams in the (σ xy , σ xx ) coordinates have been constructed for the region of fields and temperatures of interest. It is found that, on the whole, the form of the diagrams corresponds to the theoretical predictions. It is shown that the character of the flux lines on the scaling diagrams is directly connected with such a parameter as the width of a band of delocalized states at the center of the Landau level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187116
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  • 9
    Electronic Resource
    Electronic Resource
    Transport phenomena in n-MnxHg1−x Te/Cd0.96Zn0.04Te epitaxial films (1997)
    Springer
    Semiconductors 31 (1997), S. 218-221 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The results of an experimental study of samples of MnxHg1−x Te films grown by liquid-phase epitaxy on a Cd0.96Zn0.04Te substrate are presented. It shows that, as a result of the diffusion of cadmium from the substrate, a CdxMnyHg1−x−y Te film with a variable band-gap layer is formed close to the 〈epitaxial-film〉-substrate interface. The appearance of this variable band gap is revealed by the transport phenomena. The temperature dependence of the band gap E g (T) is determined in a linear approximation on T from the results of a theoretical analysis of the temperature dependences of the free-carrier concentration and mobility. It is shown that averaging the semiempirical dependences for the ternary compounds with the extreme compositions, using the virtual-crystal approximation, can produce large errors when determining E g (T) in a specific semiconductor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187115
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  • 10
    Electronic Resource
    Electronic Resource
    Influence of the quality of the heterointerface on the cyclotron resonance spectra of InAs/(AlGa)Sb heterostructures (1997)
    Springer
    Semiconductors 31 (1997), S. 1071-1073 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Cyclotron resonance is measured in solitary type-II InAs-AlGaSb quantum wells grown by molecular-beam epitaxy under various growth conditions. Quantum oscillations observed in the cyclotron resonance spectra in InAs-GaSb samples are attributed to scattering by a short-range potential due to roughness of the heterointerface. A new method based on measurement of the cyclotron resonance spectra is proposed for assessing the quality of the heterointerface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187028
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  • 11
    Electronic Resource
    Electronic Resource
    Arrays of strained InAs quantum dots in an (In Ga)As matrix, grown on InP substrates by molecular-beam epitaxy (1997)
    Springer
    Semiconductors 31 (1997), S. 1080-1083 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Arrays of strained InAs islands in an (In, Ga)As matrix on an InP(100) substrate are synthesized by molecular-beam epitaxy, and their structural and optical properties are investigated. According to transmission electron microscope and high-energy electron diffraction data, the critical thickness corresponding to the onset of island growth is 3 monolayers. The resulting InAs islands are coherently strained, and their base diameter varies from 20 nm to 90 nm. The formation of islands produces in the photoluminescence spectra a dominant long-wavelength line, which shifts toward lower energies as the effective thickness of the InAs increases. The radiation emitted by the InAs islands spans a wavelength range of 1.65–2 µm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187030
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  • 12
    Electronic Resource
    Electronic Resource
    Erratum: Structure and electrical conductivity of polycrystalline silicon films grown by molecular-beam deposition accompanied by low-energy ion bombardment of the growth surface [Semiconductors 31, 237–240 (March 1997)] (1997)
    Springer
    Semiconductors 31 (1997), S. 1099-1099 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187276
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  • 13
    Electronic Resource
    Electronic Resource
    Effect of an external bias voltage on the photoelectric properties of silicon MIS/IL structures (1997)
    Springer
    Semiconductors 31 (1997), S. 1094-1098 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The mechanism by which an external bias voltage influences the photoelectric properties of Al/tunneling-thin SiO2/p-Si structures with an induced inversion layer is investigated theoretically. A characteristic feature of the structure studied is the presence of a special inversion grid. Between this grid and the substrate a positive voltage is applied. Relations expressing the functional dependence on the bias voltage of the structure parameters and the output electrical characteristics of photocells, which are based on it, are obtained. The results of numerical calculations illustrating the effectiveness of using a bias voltage to increase the efficiency of photocells based on Al/SiO2/p-Si structures with an induced inversion layer are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187032
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  • 14
    Electronic Resource
    Electronic Resource
    Silicon and phosphorus co-implantation into undoped and indium-doped GaAs substrates (1997)
    Springer
    Semiconductors 31 (1997), S. 1217-1220 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The electrical properties and low-temperature (4.2 K) photoluminescence of heavily doped n-type layers produced by silicon and silicon/phosphorus implantation into undoped and indiumdoped Czochralski grown semi-insulating GaAs substrates have been investigated. It is found that Si+P co-implantation results in suppression of deep levels in the anion sublattice, an increase of donor activation efficiency, and a sharper carrier concentration profile in both types of substrates. The use of indium-doped substrates enhances radiation defect annealing, but does not change the donor activation efficiency.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187296
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  • 15
    Electronic Resource
    Electronic Resource
    Energy spectrum of oxygen-implanted lead telluride deduced from optical absorption data (1997)
    Springer
    Semiconductors 31 (1997), S. 1225-1227 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The thermoelectric power and optical absorption spectra of single-crystal PbTe, implanted with oxygen and vacuum annealed, have been investigated. A quasilocal level, which could be associated with oxygen, was found in the PbTe:O+ valence band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187298
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  • 16
    Electronic Resource
    Electronic Resource
    Negative differential resistivity of a nonideal Schottky barrier based on indium arsenide (1997)
    Springer
    Semiconductors 31 (1997), S. 308-314 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The process of elastic tunneling is investigated theoretically and experimentally for MOS structures with Schottky barriers based on p +-InAs. At liquid-helium temperatures, currentvoltage characteristics are obtained with negative differential resistivity segments. Using the quasiclassical approximation, analytic expressions are obtained for the tunneling transmission coefficient with carrier conversion. It is shown that the decreasing segments of the currentvoltage characteristic are connected with participation in the tunneling process of high-lying quantum-well levels in the n-channel. The calculated current-voltage characteristics are in good agreement with the results of experiment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187134
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  • 17
    Electronic Resource
    Electronic Resource
    The electrical activity of isoelectronic germanium impurities in lead chalcogenides (1997)
    Springer
    Semiconductors 31 (1997), S. 319-320 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The method of Mössbauer spectroscopy of the isotope 119Sn is used to show that in PbS and PbSe an isoelectronic germanium impurity is a two-electron donor, and that the energy levels of germanium lie above the levels formed by tin impurity atoms in these semiconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187136
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  • 18
    Electronic Resource
    Electronic Resource
    Luminescence of porous silicon in the infrared spectral region at room temperature (1997)
    Springer
    Semiconductors 31 (1997), S. 304-307 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract A method for preparing mesoporous silicon on n-type substrates has been developed. The material exhibits two intense bands of photo-and electroluminescence at room temperature: a primary one in the range 1.4–1.8 eV, and a low-energy infrared band near 1–1.2 eV. It is shown that the position of the primary emission maximum and the intensity of the band can be controlled. The properties of the primary band are explained in terms of a quantumsize model for formation of porous silicon, while the low-energy band is explained as radiative recombination in larger non-quantum-size crystallites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187133
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  • 19
    Electronic Resource
    Electronic Resource
    Luminescence of copper-aluminum diselenide (1997)
    Springer
    Semiconductors 31 (1997), S. 315-318 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The results of a multifaceted investigation of the luminescence properties of single crystals of copper-aluminum diselenide CuAlSe2 are presented. The luminescence spectrum of undoped single crystals of this compound with homogeneous composition was found to have a complex structure. The luminescence properties were modified by annealing the compound in various atmospheres. The nature of the radiative transitions in this semiconductor was analyzed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187135
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  • 20
    Electronic Resource
    Electronic Resource
    Hall effect on inertial electrons in semiconductors (1997)
    Springer
    Semiconductors 31 (1997), S. 399-400 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract A new effect, which is attributable to the Lorentz force acting on electrons in a semiconductor undergoing acceleration, is predicted. An expression is obtained for the Hall field and the Hall voltage is estimated for a real two-dimensional heterostructure. Possible schemes for intensifying the Hall field are analyzed for the example of two Hall elements, one of which is a voltage generator and the other is a load.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187170
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  • 21
    Electronic Resource
    Electronic Resource
    Photoconductivity of the germanium-doped solid solution p-GaAs0.94Sb0.06 (1997)
    Springer
    Semiconductors 31 (1997), S. 405-406 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract A new mechanism of impurity photoconductivity in semiconductors has been discovered. The form of the long-wavelength photoconductivity spectra observed in p-GaAs0.94Sb0.06: Ge is satisfactorily explained in terms of resonance ionization of impurity levels by phonons excited during absorption of infrared radiation.
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    URL: http://dx.doi.org/10.1134/1.1187172
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  • 22
    Electronic Resource
    Electronic Resource
    Modeling of mass transfer under conditions of local gas-phase epitaxy through a mask (1997)
    Springer
    Semiconductors 31 (1997), S. 401-404 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The diffusion mass transfer of reagents under the conditions of local gas-phase epitaxy through a mask has been studied by the method of numerical modeling. The possible effect of adsorption of reagents on the surface of the mask and their surface diffusion on the local growth rate is studied. The computational results are compared with published experimental data.
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    URL: http://dx.doi.org/10.1134/1.1187171
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  • 23
    Electronic Resource
    Electronic Resource
    Injection heterolaser based on an array of vertically aligned InGaAs quantum dots in a AlGaAs matrix (1997)
    Springer
    Semiconductors 31 (1997), S. 411-414 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Arrays of vertically aligned InGaAs quantum dots in a AlGaAs matrix have been investigated. It is shown that increasing the band gap of the matrix material makes it possible to increase the localization energy of quantum dots relative to the edge of the matrix band, as well as the states of the wetting layer. The use of an injection laser as the active region makes it possible to decrease the thermal filling of higher-lying states, and thereby decrease the threshold current density to 63 A/cm2 at room temperature. A model explaining the negative characteristic temperature section observed at low temperatures is proposed. The model is based on the assumption that a transition occurs from nonequilibrium to equilibrium filling of the states of the quantum dots.
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    URL: http://dx.doi.org/10.1134/1.1187173
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  • 24
    Electronic Resource
    Electronic Resource
    Propagation of a surface acoustic wave in a layered system containing a two-dimensional conducting layer (1997)
    Springer
    Semiconductors 31 (1997), S. 407-410 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract A surface acoustic wave can propagate in a piezoelectric crystal above which lies a two-dimensional conducting layer. The electric fields excited by the wave in the crystal penetrate into the two-dimensional layer and excite dissipative currents in it, which results in absorption of the wave and change of its velocity. These characteristics are calculated for different configurations of the layered system taking into account not only the surface conductivity but also surface diffusion. When the layer has an elastic contact with the crystal, for the configuration allowance is made not only for the piezoelectric but also the deformation interaction of the sound wave with the electrons.
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    URL: http://dx.doi.org/10.1134/1.1187321
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  • 25
    Electronic Resource
    Electronic Resource
    Photosensitivity of porous silicon-layered III–VI semiconductors heterostructures (1998)
    Springer
    Semiconductors 32 (1998), S. 320-321 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Rectifying heterojunctions with photosensitivity 1–5 V/W at T=300 K were obtained by forming optical contacts between free porous silicon and layered InSe and GaSe semiconductors. A wide-band photovoltaic effect was obtained when these heterostructures were illuminated on the free porous silicon plate side. The long-wavelength photosensitivity edge of these devices is determined by direct transitions in InSe or GaSe, respectively. It is concluded that heterojunctions based on free porous silicon plates can be used as wide-band phototransducers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187558
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  • 26
    Electronic Resource
    Electronic Resource
    Faraday rotation of light in a microcavity (1997)
    Springer
    Semiconductors 31 (1997), S. 747-751 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Faraday rotation of light in microcavities is studied theoretically. The reflection and transmission spectra are calculated. It is shown that in the region of the spectrum corresponding to a characteristic mode of the cavity the Faraday rotation is strongly intensified and the polarization of the light changes substantially.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187084
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  • 27
    Electronic Resource
    Electronic Resource
    Transport of hydrogen in films of graphite, amorphous silicon, and nickel oxide (1997)
    Springer
    Semiconductors 31 (1997), S. 110-114 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract A new concentration pulse method is used to study the transport of hydrogen in three semiconducting materials deposited in the form of films on nickel substrates. The most probable models for the transport are proposed. In graphite hydrogen diffuses in the form of molecules and its diffusion is accompanied by reversible capture; transport occurs along microscopic voids between scales of graphite. Valence unsaturated bonds at the boundaries of the scales serve as capture centers. Diffusion in amorphous silicon is also accompanied by capture, but takes place in an atomic form along interstices; valence unsaturated Si-bonds serve as capture centers. In nickel oxide, as in graphite, diffusive transport takes place in the form of molecules, but capture of hydrogen on valence unsaturated bonds has not been observed. A comparative analysis is made of the properties manifested by these materials for oxygen in order to establish their correlation with the structure and electronic properties of the semiconductors.
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    The electrical conductivity of polycrystalline SnO2(Cu) films and their sensitivity to hydrogen sulfide (1997)
    Springer
    Semiconductors 31 (1997), S. 335-339 
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    Notes: Abstract The effect of doping with copper on the sensor properties and the electrical conductivity of polycrystalline SnO2(Cu) films has been investigated. It has been found that at room temperature the residual conductivity is observed after the films are exposed to H2S. This made it possible to determine the character of the low-temperature conductivity of the films for different degrees of saturation with hydrogen sulfide. A comparison of the obtained data with the results of layerwise elemental analysis suggested a model that explains the mechanism of the gas sensitivity of SnO2(Cu) to hydrogen sulfide. In contrast to the mechanisms, which are associated with the work done by the surface and which are standard for gas sensors, in the present case the change in the conductivity is due to the chemical reaction of the electrically active copper with sulfur in the entire volume of the film. This reaction determines the selectivity and high sensitivity of SnO2(Cu) to H2S.
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    Intense photoluminescence of porous layers of SiC films grown on silicon substrates (1997)
    Springer
    Semiconductors 31 (1997), S. 354-358 
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    Notes: Abstract Luminescing porous layers have been prepared on SiC films grown on silicon substrates. The intensity of the photoluminescence increases very strongly as a result of electrolytic oxidation of porous layers. The spectrum of the pulsed photoluminescence consists of a series of overlapping bands from 1.8 to 3.3 eV. Investigations of the initial SiC films showed that they are nonstoichiometric and strongly disordered. Nonetheless, the intensity of the photoluminescence of the oxidized porous layers is much higher than can be obtained from correspondingly treated SiC crystals or crystalline films.
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    Interband magnetooptic absorption line shape in bismuth (1997)
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    Semiconductors 31 (1997), S. 350-353 
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    Notes: Abstract The results of an investigation of the transmission of a symmetric bismuth stripline at T=80 K at the laser wavelength λ=10.6 µm in magnetic fields up to B=8 T are reported. A set of parameters is obtained for the energy spectrum of the L electrons of bismuth by modeling the shape of the experimental curve on the basis of a modified Baraff model. The values of the parameters in the McClure-Choi model are found from an analysis of the field positions of the maxima of the mageto-optic oscillations.
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    Viktor Il’ich Fistul’ (On his seventieth birthday) (1997)
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    Semiconductors 31 (1997), S. 759-760 
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    Formation of InGaAs/GaAs nanostructures by submonolayer deposition from molecular beams (1997)
    Springer
    Semiconductors 31 (1997), S. 768-772 
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    Notes: Abstract The morphological characteristics of an ensemble of nanosize objects InGaAs/GaAs on the singular and vicinal GaAs(100) surfaces have been investigated by means of scanning tunneling microscopy. Different modifications of molecular-beam epitaxy were used to produce the nanostructures. It was determined that both the growth kinetics and a deliberate disorientation of the surface strongly affect surface morphology.
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    Electronic transport in a type-II GaInAsSb/p-InAs heterojunction with different doping levels of the solid solution (1997)
    Springer
    Semiconductors 31 (1997), S. 763-767 
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    Notes: Abstract Galvanomagnetic phenomena and photoconductivity in broken-gap type-II GaInAsSb/p-InAs heterojunctions with different levels of doping of the solid solution with donor (Te) or acceptor (Zn) impurities have been investigated. It has been determined that in such structures an electronic channel, which determines the galvanomagnetic effects in a wide range of doping levels, is present at the heterojunction. A sharp decrease of the Hall mobility was observed in the experimental heterostructures with a high level of doping of the epitaxial layer with an acceptor impurity. The observed effect is due to exhaustion of the electronic channel as a result of carrier localization in potential wells at the heterojunction.
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    Hall effect in quasi-two-dimensional superlattices in nonquantizing magnetic and strong electric fields (1997)
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    Semiconductors 31 (1997), S. 781-783 
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    Notes: Abstract The transverse electric field E y arising in quasi-two-dimensional superlattices (SLs) in a strong pulling electric field E x and a weak magnetic field oriented in a direction perpendicular to the plane of the SL (H ∥ Z) is calculated. In the case where the electronic energy spectrum is nonadditive, the field E y includes the Hall factor and the spontaneous transverse electric field that exists without H. The field E y is a multivalued and sign-variable function of E x . The asymptotically stable branches of the function E y are determined. The (kinetic) “potential,” whose minimum corresponds to a stationary state of the nonequilibrium electron gas, is used.
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    Injection enhancement of photocurrent in polycrystalline silicon p +-n-n + structures (1997)
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    Semiconductors 31 (1997), S. 359-360 
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    Notes: Abstract Injection enhancement of photocurrent in structures of the p +-n-n + type fabricated on the basis of films of polycrystalline silicon grown on commercial silicon substrates has been investigated. The questions of obtaining injection photodetectors and other bistable elements with the aid of α-irradiation and heat treatment are discussed.
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    Particle scattering times on one-dimensional potential barriers (1997)
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    Semiconductors 31 (1997), S. 361-365 
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    Notes: Abstract The tunneling times for particles whose initial state is described by wave packets of a general form is determined on the basis of a packet analysis. It is shown that the unphysical nature of the results obtained previously by numerical modeling of the motion of wave packets in one-dimensional structures is due to the incorrect interpretation of the packet formalism. Wave-packet tunneling times observed in a numerical experiment are not at all the particletunneling times.
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    Characteristic features of the defect formation process in Pb1−x SnxSe(x⩽0.06) (1998)
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    Semiconductors 32 (1998), S. 397-400 
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    Notes: Abstract The spectral dependences of the absorption coefficient in undoped p-Pb1−x SnxSe(x=0.00–0.06) at T=300 K were investigated. A quasilocal level associated with a chalcogen vacancy was found in all experimental samples. It is shown that the chalcogen vacancy density in samples with tin is appreciably different from that in samples without tin, and it increases with x. The nature of this phenomenon is discussed.
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    Indirect electronic transitions in semiconductors occurring as a result of scattering of charge carriers by dislocations in a quantizing magnetic field (1998)
    Springer
    Semiconductors 32 (1998), S. 404-405 
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    Notes: Abstract The light absorption due to indirect electronic transitions in a semiconductor in a quantizing magnetic field is calculated under the assumption that an edge dislocation plays the role of a third body. The characteristic light frequency and magnetic field dependences of the absorption coefficient are determined for the mechanism considered.
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    Energy spectrum of acceptors in the semimagnetic semiconductors p-Hg1−x MnxTe in the spin-glass region (1998)
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    Semiconductors 32 (1998), S. 401-403 
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    Notes: Abstract The far-IR transmission and photoconductivity in the semimagnetic alloys p-Hg1−x MnxTe (x=0.20–0.22) at temperatures 2–7 K were investigated at fixed frequencies of optically pumped molecular lasers in the region 49–311 µm. We report the observation of photoexcitation of acceptors from the ground into excited states under conditions when the direct interaction of the magnetic moments of the manganese ions becomes substantial and results in the formation of a spin-glass phase. It was found that the internal field produced by the spontaneous and external polarizations of the magnetic moments of the Mn2+ ions in the spin-glass temperature range influences the energy spectrum of acceptors in a magnetic field.
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    Short-wavelength photoluminescence of SiO2 layers implanted with high doses of Si+, Ge+, and Ar+ ions (1998)
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    Semiconductors 32 (1998), S. 392-396 
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    Notes: Abstract The short-wavelength (400–700 nm) photoluminescence (PL) spectra of SiO2 layers implanted with Si+, Ge+, and Ar+ ions in the dose range 3.2×1016–1.2×1017 cm−2 are compared. After Ar+ implantation an extremely weak luminescence, which vanishes completely after annealing for 30 min at 400 °C or 20 ms at 1050 °C, was observed. After implantation of group-IV elements the luminescence intensities were 1 to 2 orders of magnitude higher, and the luminescence remained not only with annealings but it could also increase. The dose and heating dependences of the luminescence show that it is due to the formation of impurity clusters and this process is more likely to be of a percolation than a diffusion character. For both group-IV impurities an intense blue band and a weaker band in the orange part of the spectrum were observed immediately after implantation. The ratio of the excitation and emission energies of the blue luminescence is characteristic of oxygen vacancies in SiO2; its properties are determined by the direct interaction of group-IV atoms. On this basis it is believed that the centers of blue PL are chains of Si (or Ge) atoms embedded in SiO2. The orange luminescence remained after annealings only in the case of Si+ implantation. This is attributed directly to the nonphase precipitates of Si in the form of strongly developed nanometer-size clusters.
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    Effect of impurities with variable valency on the transport phenomena in a quantum well (1997)
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    Semiconductors 31 (1997), S. 651-654 
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    Notes: Abstract Transport phenomena in a quantum well containing a multivalent impurity are investigated on the basis of a model of strong Coulomb correlations. It is shown that as the iron content in the quantum well increases, the Coulomb correlations grow and produce ordering in the impurity system. As a result, the scattering of 2d electrons by them should weaken, and this should result in a substantial increase in the mobility of 2d electrons.
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    Photosensitivity of thin-film structures based on laser-deposited CuIn(TexSe1−x )2 layers (1998)
    Springer
    Semiconductors 32 (1998), S. 409-411 
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    Notes: Abstract Thin films of the solid solutions CuIn(TexSe1−x )2 (0〈x〈1) exhibiting chalcopyrite structure were obtained by the method of laser deposition. Using half-transmitting indium layers, Schottky diodes were prepared on the basis of the films obtained. The spectral dependence of the sensitivity as a function of the ratio between Te and Se was investigated by illuminating the structures through the In contact. Analysis of the experimental results showed that the region of spectral sensitivity of such thin-film structures depends on the tellurium content in the CuIn(TexSe1−x )2 layers.
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    Electric and photoelectric properties of n-GaxIn1−x N/p-Si anisotypic heterojunctions (1998)
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    Semiconductors 32 (1998), S. 412-416 
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    Notes: Abstract We have developed a technology for producing n-type GaxIn1−x N/p-Si heterostructures by combined pyrolysis of indium and gallium monoammoniate chlorides, making it possible to obtain heterolayers with composition varying over wide limits (from GaN up to InN). The composition and basic electric and optical characteristics of nitride films were determined. The electric and photoelectric properties of the heterostructures with GaxIn1−x N films of different composition were investigated. It was shown that the anisotypic heterojunction n-GaxIn1−x N/p-Si is a promising photosensitive element for detecting visible-range radiation. The maximum values of the specific detectivity were D*=1.2×1011 Hz1/2·W−1 at 290 K. A band diagram of the heterojunction was constructed.
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    Intraband absorption of light in quantum wells induced by electron-electron collisions (1998)
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    Semiconductors 32 (1998), S. 417-422 
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    Notes: Abstract It is shown that in a semiconductor with quantum wells intraband absorption of long-wavelength radiation due to Coulomb interaction of the electrons is possible as a result of band nonparabolicity. Analytical expressions for the absorption are found for the limiting cases of nondegenerate and strongly degenerate, two-dimensional electron, gas. At high carrier densities the absorption due to electron-electron interaction can be much stronger than absorption due to electron-phonon interaction.
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    Radiation emitted by quantum-well InGaAs structures I. Spontaneous emission spectra (1998)
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    Semiconductors 32 (1998), S. 423-427 
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    Notes: Abstract The spontaneous emission spectra of strained InGaAs quantum wells in the spectral range 1.2–1.5 eV were studied experimentally at 4.2–286 K with pump currents up to ∼9.2 kA· cm−2. An interpretation of the observed bands is given. The transition 1e–1hh (TE polarization) dominates the spectrum. The position of the peak for this transition is virtually current-independent. No indications of a “red” shift, expected at a high carrier density, were observed. The weak forbidden transitions (1e–2hh) were identified. The longwavelength edge of the band drops off exponentially, by analogy with the well-known Urbach rule for the absorption edge.
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    Measurement of the diffusion length of minority charge carriers using real Schottky barriers (1997)
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    Semiconductors 31 (1997), S. 661-665 
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    Notes: Abstract The characteristic features of the field dependence of the short-circuit photocurrent of real Schottky barriers based on strongly doped semiconductors under conditions of an oscillatory dependence of the light absorption coefficient a on the field intensity in the space-charge region and the photon energy (hν〉E g ) are analyzed. An analytical expression is obtained for the dependence of the photocurrent on the thickness W of the space-charge region when the condition αW≪1 is satisfied. An improved method is proposed for determining the diffusion length of minority charge carriers by analyzing the dependence I p (W) in the spectral region satisfying the conditions of applicability of the expressions obtained. Some improvements are also made in the method for distinguishing the capacitance of the space-charge region from the high-frequency capacitance of a real Schottky barrier. The method is tested on structures Au-GaAs with N d =4.5×1016–1×1018 cm−3. The method of determining L is checked independently on the basis of a theoretical descripion of the spectral dependence of the quantum efficiency of the structure.
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    Charge-carrier lifetime in Hg1−x CdxTe (x=0.22) structures grown by molecular-beam epitaxy (1997)
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    Semiconductors 31 (1997), S. 655-657 
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    Notes: Abstract Measurements of the charge carrier lifetime in epitaxial structures based on narrow-gap Hg1−x CdxTe (x=0.22), grown by molecular-beam epitaxy with pulsed excitation using radiation at different wavelengths, are reported. It is shown that in p-type epitaxial films the lifetime is determined by the Auger recombination mechanism at temperatures corresponding to the impurity conductivity, and for n-type epitaxial films recombination via local centers is characteristic.
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    Temperature dependence of the electrical properties of polycrystalline silicon in the dark and in sunlight (1997)
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    Semiconductors 31 (1997), S. 813-814 
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    Notes: Abstract The electric resistance and effective carrier mobility in polycrystalline silicon are calculated as functions of temperature and the photoexcitation level. The theoretical results are in agreement with existing experimental data.
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    Calculation of 2p levels for thermal double donors in silicon (1997)
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    Semiconductors 31 (1997), S. 819-822 
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    Notes: Abstract A two-center model is developed to explain the electronic structure of thermal double donors (TDD) in silicon. Calculations of 2p levels of singly ionized TDD’s are performed in the effective mass approximation. From a comparison of the calculated results with the experimental data, the internuclear distance between the two electrically active atoms is evaluated as 0.75–0.95 nm for the TDD1–TDD3 and 1.35–1.75 nm for the next four species: TDD4–TDD7.
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    Dependence of the resonant conductivity of symmetric double-barrier structures on the amplitude of rf field (1997)
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    Semiconductors 31 (1997), S. 809-812 
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    Notes: Abstract An analytical expression for the rf amplitude dependence of the conductivity in a symmetric double-barrier resonance-tunneling structure with high, thin barriers under conditions of collisionless electron transport is found on the basis of the solution of a nonstationary Schrödinger equation describing the resonance interaction of electrons with the rf field. It is shown that under the action of a rf field with frequency ω and amplitude approximately corresponding to triple the width of the resonance level, up to half of the electrons passing through this level can be transferred, emitting or absorbing a quantum of energy ℏω, into a neighboring level.
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    Conductivity stimulated by temperature oscillations in dissociated cadmium telluride and cadmium sulfide solid solutions (1997)
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    Semiconductors 31 (1997), S. 823-825 
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    Notes: Abstract The relaxation properties of films of dissociated cadmium sulfide and cadmium telluride solid solutions have been investigated. Conductivity stimulated by temperature oscillations was observed. The relaxations caused by a change in the external electric field and temperature were studied. It was determined that residual conductivity and increasing current relaxations are characteristic of the experimental samples. The results are interpreted in a model of an inhomogeneous semiconductor.
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    Enhancement of the photovoltaic effect in a two-dimensionally disordered medium (1997)
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    Semiconductors 31 (1997), S. 829-830 
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    Notes: Abstract The photogalvanic effect in a two-dimensional, weakly absorbing Dykhne medium without an inversion center is studied. It is shown that a giant enhancement of the effective photovoltaic coefficient occurs as a result of the divergence of the mean-square modulus of the electric field.
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    Intrinsic photoconductivity in chromium disilicide epitaxial thin films (1997)
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    Semiconductors 31 (1997), S. 826-828 
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    Notes: Abstract Spectral and integrated photoconductivities in chromium-disilicide epitaxial films grown on single-layer silicon substrates have been studied in the photon energy range 0.5–1.6 eV. The region of the photoconductivity maximum observed at 1.23 eV corresponds to the third direct interband transition in chromium disilicide at 0.9–0.95 eV. Possible reasons for the weak photoconductivity signal in the region of the fundamental absorption edge are analyzed.
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    Effect of laser irradiation on the photoconductivity and noise in n-Cdx Hg1−x Te single crystals (1997)
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    Semiconductors 31 (1997), S. 695-697 
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    Notes: Abstract The effect of nanosecond laser radiation on the photoconductivity and 1/f noise in CdxHg1−x Te crystals has been investigated. It is shown that laser irradiation decreases the photosensitivity of the samples and produces a short-wavelength shift of the maximum and the long-wavelength edge of the photoconductivity spectrum. The intensification of 1/f noise and the increase in its frequency are due to a laser-induced increase in the defect density in the material.
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    Photosensitivity of thin-film ZnO/CdS/Cu(In, Ga)Se2 solar cells (1997)
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    Semiconductors 31 (1997), S. 681-685 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The photoelectric properties of thin-film ZnO/CdS/Cu(In,Ga)Se2 solar cells were studied by polarization photoactive absorption spectroscopy. It was shown that the thin-film solar cells have a high efficiency relative to the intensity of unpolarized radiation in the photon energy range from 1.2 to 2.5 eV. The induced photopleochroism coefficient P I increases with the angle of incidence of the incident radiation as P I ∼θ 2 and at 70° it reaches 17–20% with photon energy 1.3 eV. Oscillations of the photopleochroism were also observed. These results are discussed taking into account the antireflection effect. The results obtained by us make it possible to use such solar cells as wide-band photosensors for linearly polarized radiation and for monitoring the production of high-efficiency, thin-film solar cells based on ternary semiconductors.
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    High-temperature annealing and nuclear-transmutation doping of GaAs bombarded by reactor neutrons (1997)
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    Semiconductors 31 (1997), S. 686-690 
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    Notes: Abstract The electrical properties and spectrum of deep traps in GaAs under heat treatment, neutron irradiation, and subsequent annealing to T ann=1100 °C have been investigated. It is shown that for T ann〉900 °C thermal acceptors are formed rapidly in GaAs, which degrades the properties of the transmutation-doped material. Estimates are given for the utilization factor of the impurity with transmutation doping of GaAs as a function of T ann and the integrated neutron flux. The parameters of deep traps in the experimental material are presented.
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    Photoelasticity and quadratic permittivity of wide-gap semiconductors (1997)
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    Semiconductors 31 (1997), S. 698-699 
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    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Expressions for the photoelastic constants are obtained on the basis of an analogy between the photoelastic and elastic properties of semiconductor crystals. Calculations were performed for wide-gap semiconductors (silicon carbide and boron, aluminum, and gallium nitrides) with sphalerite and wurtzite structures. The quadratic permittivity is also calculated for hexagonal structures.
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    Inversion of the conduction type of epitaxial films of PbSnTe solid solutions under the influence of laser irradiation at subthreshold power (1997)
    Springer
    Semiconductors 31 (1997), S. 844-846 
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    Notes: Abstract Conduction type inversion processes in Pb1−x SnxTe epitaxial films irradiated by a CO2 laser (λ=10.6µm) at subthreshold power is investigated. It is hypothesized that the stable inverted state is a result of the formation of neutral metal and chalcogen divacancies.
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    Evolution of static negative differential conductivity in Ga1−x AlxAs as a function of the transverse magnetic field and the composition of the solid solution (1997)
    Springer
    Semiconductors 31 (1997), S. 841-843 
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    Notes: Abstract The authors investigate the behavior of the current-voltage characteristic of electrons under conditions of dynamic intervalley transfer in strong E⊥H fields in a solid solution Ga1−x AlxAs as the energy gap Δɛ between the lower and upper valleys is gradually diminished. It is shown that the static negative differential conductivity is particularly sensitive to variation of the magnetic field H for small gaps Δɛ. Increasing H suppresses the static negative differential conductivity in this case. This technique can be used to eliminate low-frequency Gunn oscillations while simultaneously preserving the dynamic negative differential conductivity, which is suppressed in the submillimeter spectral range.
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    Injection currents in mixed-layer Ga0.5In1.5S3 single crystals (1997)
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    Semiconductors 31 (1997), S. 864-865 
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    Notes: Abstract Single crystals of Ga0.5In1.5S3 are prepared by chemical transport reaction, and the currentvoltage characteristics and temperature dependence of the electrical conductivity are investigated. It is shown that the current transmission mechanism in an In-Ga0.5In1.5S3-In structure is associated with monopolar injection.
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    Excitonic effects in the photoconductivity of quantum-well GaxIn1−x As/InP structures (1997)
    Springer
    Semiconductors 31 (1997), S. 719-721 
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    Notes: Abstract The photoconductivity spectra of quantum-well structures consisting of 50 alternating 7 to 12-mm-thick GaxIn1−x As (x=0.47) layers forming quantum wells and 10 to 15-nm-thick InP barriers have been investigated. Characteristic excitonic peaks 11H, 11L, 13H, 22H, and 22L were observed in the high-quality structures. A strong temperature dependence was found for the 11H exciton, while no such dependence was observed for any of the other excitons. This is explained by the fact that the 11H state of an exciton falls in the range of energies which are forbidden for free carriers, while the remaining states are resonance states and overlap with the continuous spectrum. The thermal activation energy of photoconductivity was found to be 150±30 meV, much greater than the exciton binding energy and close to the depth of the potential well for electrons. This shows that the photosensitivity is due to above-barrier charge-carrier transfer and that the tunneling transfer between the wells is negligible.
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    1/f noise in strongly doped n-type GaAs under band-band illumination conditions (1997)
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    Semiconductors 31 (1997), S. 728-732 
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    Notes: Abstract The nature of 1/f noise, which appears in strongly doped n-type GaAs (electron density n 0⋍1017 cm−3) under band-band illumination, has been investigated by measuring the low-frequency noise under high geometric magnetoresistance conditions. It is shown that such noise is of a volume nature and is due to carrier number (and not mobility) fluctuations. It is shown experimentally for the first time that surface noise can be distinguished from volume noise by performing measurements under high geometric magnetoresistance conditions.
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    Longitudinal photoeffect in In0.53Ga0.47As p-n junctions (1997)
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    Semiconductors 31 (1997), S. 733-734 
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    Notes: Abstract A longitudinal photoeffect in In0.53Ga0.47As p-n junctions was investigated: the dependence of the longitudinal photoemf V ph 1 on the coordinates of the light spot, the temperature, and the magnetic field. The dependences on the coordinates of the light spot were found to be linear; the theoretical values of V ph 1 agree with the experimental values. The temperature variation of V ph 1 in the interval 100–300 K is explained by the variation of the current-carrier mobility as a result of thermal scattering by the lattice. In a magnetic field, V ph 1 is observed to increase as a result of the photomagnetic effect.
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    Conversion of red and infrared luminescence centers as a result of electron bombardment and annealing of CdS and CdS:Cu single crystals (1997)
    Springer
    Semiconductors 31 (1997), S. 866-868 
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    Notes: Abstract The luminescence centers and their conversion as a result of electron bombardment and annealing in CdS single crystals which were not specially doped and which were doped with copper have been investigated. The Cu atoms, which interact mainly with defects in the cadmium sublattice, form CuCd, which are responsible for luminescence at wavelengths λm=0.98−1.00 µm. At annealing temperatures above 50 °C, conversion of the defect complexes, which are responsible for the green (λm=0.514 µm), red (λm=0.72 µm), and infrared (λm=0.98 µm) luminescence, occurs as a result of an increase in the mobility of point defects in the cadmium and sulfur sublattices of CdS:Cu.
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    Energy spectrum of n-type Pb1−x SnxTe (x=0.22) bombarded by neutrons (1997)
    Springer
    Semiconductors 31 (1997), S. 872-874 
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    Notes: Abstract The effect of hydrostatic pressure (P⩽12 kbar) on the electrical properties of n-type Pb1−x SnxTe (x=0.22) bombarded by electrons (T≈300 K, E=6 MeV, Φ=7.7×1017 cm−2) has been investigated. The restructuring of the energy spectrum of electronirradiated alloys under pressure has been investigated. The parameters of a model of the energy spectrum of charge carriers in electron-irradiated n-type Pb1−x SnxTe (x=0.22) have been determined on the basis of the experimental data obtained.
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    Quenching of EL2 defect-induced luminescence in gallium arsenide by copper atoms (1997)
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    Semiconductors 31 (1997), S. 893-895 
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    Notes: Abstract It is shown that the introduction of copper atoms into gallium arsenide crystals containing EL2 antisite defects results in virtually complete vanishing of the EL2-induced luminescence bands with radiation maxima at hv m =0.63 and 0.68 eV. This occurs as a result of the deactivation of the EL2 defects as a result of their interaction with copper atoms, which account for the formation of electrically inactive EL2-Cu complexes.
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    The role of macrodefects in electronic and ionic processes in wide-band II–VI semiconductors (1998)
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    Semiconductors 32 (1998), S. 575-579 
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    Notes: Abstract This paper discusses the electrical, photoelectric, and photoluminescence characteristics and the ESR spectra of CdS crystals with various dislocation densities (γ=102–105 cm−2). It is found that the presence of mobile donors and of dislocations with density γ〉103–104 cm−2 has a number of specific effects: anisotropy of the electric-field-induced conductivity, athermal diffusion of donors under the action of ultrasound, distortion of the shape of the edge-luminescence spectrum, and photostimulated degradation of the photosensitivity and photoluminescence. The dependence of the type of macrodefects and the optical strength of the crystals on the fabrication process is studied.
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    Study of the surface structure of tin dioxide layers for gas sensors by atomic-force microscopy (1998)
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    Semiconductors 32 (1998), S. 587-589 
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    Notes: Abstract This paper presents the results of a study by atomic-force microscopy of tin dioxide layers as a function of the conditions under which they are doped with iodine and tellurium during the production of the layers by thermal vacuum deposition of tin, followed by oxidation. Data concerning the atomic-force microscopy of layers fabricated in various processing regimes are presented and discussed. It is shown that introducing volatile impurities into the starting charge is an effective means of modifying the surface structure of the layers and of altering the character of its microsurface. The temperature dependence of the sensitivity of the layers to toluene vapor is studied and analyzed.
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    Defect-formation processes in silicon doped with manganese and germanium (1998)
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    Semiconductors 32 (1998), S. 606-607 
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    Notes: Abstract Deep-level transient spectroscopy has been used to study the effect of Ge atoms on the behavior of Mn in Si. It is shown that Ge atoms introduced into Si during growth manifest no electrical activity, even though their concentration is rather high: 1016–1019 cm−3. It is established that the presence of Ge atoms in the Si lattice enhances the efficiency of the formation of the deep levels E c -0.42 eV and E c -0.54 eV, which are associated with Mn in the Si lattice: the concentration of these deep levels in Si〈Ge, Mn〉 samples is a factor of 3–4 greater than in Si〈Mn〉. It is found that the presence of Ge atoms stabilizes the properties of the Mn levels in Si: They anneal more slowly than in Si〈Mn〉 by a factor of 5–6. It is assumed that the detected effects are associated with the features of the defect structure of Si doped with Ge and Mn.
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    Binding energy of Coulomb acceptors in quantum-well systems (1997)
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    Semiconductors 31 (1997), S. 936-940 
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    Notes: Abstract The binding energy of a Coulomb acceptor state in a type-I heterostructure with several tunneling-coupled quantum wells is investigated as a function of the positions of the impurity in the structure. It is shown that the specific features of quantum-well hole states strongly influence the binding energy, especially when subbands with negative effective masses arise.
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    The effect of a “Coulomb well” on the absorption and magnetoabsorption spectra of strained InGaAs/GaAs heterostructures (1997)
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    Semiconductors 31 (1997), S. 950-960 
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    Notes: Abstract The optical and magnetooptical properties of strained InGaAs/GaAs quantum-well heterostructures grown by molecular-beam epitaxy were studied at T=1.7 K in magnetic fields B⩽7.5 T. The well-resolved oscillatory structure of the magnetoabsorption spectra makes it possible to reproduce the “fan diagrams” for transitions between Landau levels of the HH1E1 quantum-confined states, taking into account exciton binding energies calculated variationally. Based on these results, reduced cyclotron masses of carriers were calculated for quantum wells with various indium contents. A self-consistent variational solution to the exciton problem in the structure under study shows that for weak type-II potentials the effect of Coulomb localization of the hole leads to a relative increase in the oscillator strength of the LH1E1 exciton transition. In this case the LH1E1 and LH3E1 exciton transitions remain spatially direct and retain a considerable intensity. The calculated splitting of ∼9 meV between these two states in zero magnetic field is found to be in agreement with experiment. The significant oscillator strength of light-hole excitons, along with the observed doublet structure, are experimental confirmations that electron-hole attraction can transform a rather low barrier for light holes in a type-II structure into a quantum well with a parabolic “Coulomb” shape near its bottom, i.e., a “Coulomb well.”
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    Radiation hardness of porous silicon (1997)
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    Semiconductors 31 (1997), S. 966-969 
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    Notes: Abstract The effect of irradiation by 300-keV Ar+ ions on the properties of electrochemically produced porous silicon is studied at doses of 5×1014–1×1016 cm−2. Raman scattering and photoluminescence data are used to show that the radiation hardness of porous silicon layers is substantially greater than that of single crystal silicon.
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    The effect of a longitudinal magnetic field on electronic intersubband transitions in asymmetric heterostructures (1997)
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    Semiconductors 31 (1997), S. 961-965 
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    Notes: Abstract Infrared absorption spectra are calculated for electronic intersubband transitions in asymmetric heterostructures subjected to a longitudinal magnetic field. The systems discussed include a single quantum well in a transverse electric field, a “stepped” quantum well, and a double well with tunnel-coupled excited levels. The longitudinal magnetic field causes collisionless broadening of the absorption peaks (because the effect of the magnetic field on the dispersion law of an electronic state varies from state to state, which modifies the transitions between them) and absorption of normally incident light (due to changes in the selection rules).
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    Filling of dislocation levels in strong electric fields (1998)
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    Semiconductors 32 (1998), S. 29-30 
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    Notes: Abstract The dependence of the filling factor for occupation of the energy levels of an edge dislocation by electrons on the external electric field is investigated theoretically. An analytical relation is derived for the filling factor. It is established that the dislocation filling factor decreases as the electric field is increased.
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    Donor-acceptor recombination in short-period silicon-doped GaAs/AlAs superlattices (1998)
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    Semiconductors 32 (1998), S. 745-748 
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    Notes: Abstract A low-frequency band is observed along with an exciton band in photoluminescence spectra of short-period GaAs/AlAs superlattices doped with Si in the barriers or in the barriers and wells. This band is ascribed to donor-acceptor recombination on the basis of the dependence of its frequency on the excitation intensity under cw excitation and on the time delay under pulsed excitation. Mainly type-II superlattices are investigated. The estimate E A+E D≈120 meV can be obtained from the peak energy of the donor-acceptor band with a very weak excitation intensity. The estimates E A≈23 meV and E D≈90 meV are obtained from the temperature dependence of the band intensity. It is suggested that the deep donor level is associated with a DX center in the AlAs layers.
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    Allowing for current spreading in semiconductors during measurements of the contact resistivity of ohmic contacts (1998)
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    Semiconductors 32 (1998), S. 739-744 
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    Notes: Abstract A modification of the contact-area pattern with radial geometry, which has certain advantages in determining the contact resistivity of ohmic contacts (ρ c) fabricated on substrates and low-resistance semiconductor layers, is proposed. Different variants of its application for both the transmission line method (TLM) and methods based on a numerical calculation of the resistance of the semiconductor with allowance for current spreading are considered. It is shown that the transmission line method makes it possible to obtain an upper estimate of the contact resistivity on substrates. The errors of such estimates are also calculated as a function of the parameters of the semiconductor and the contact. The TLM estimate is a good first approximation for determining the exact value of ρ c by numerically calculating the resistance of the semiconductor. The results obtained are used to study the contact resistivity of Ni-based ohmic contacts on n-6H-SiC substrates.
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    Light absorption in aperiodic PbS/C superlattices in an electric field (1998)
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    Semiconductors 32 (1998), S. 762-764 
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    Notes: Abstract Light absorption is investigated in aperiodic PbS/C Fibonacci and Thue-Morse superlattices at room temperature for two orientations of the light wave electric field. In the first case the electric field vector is directed parallel to the plane of the superlattice. In the second case there is a component perpendicular to the plane of the superlattice. Light absorption is investigated in an external electric field directed along the axis of the superlattice.
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    Light absorption and refraction due to intersubband transitions of hot electrons in coupled GaAs/AlGaAs quantum wells (1998)
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    Semiconductors 32 (1998), S. 757-761 
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    Notes: Abstract Variation of the absorption coefficient and refractive index of a system of tunnel-coupled GaAs/AlGaAs quantum wells in a longitudinal electric field is discovered and investigated in the spectral region corresponding to intersubband electron transitions. The phenomena observed are explained by electron heating in the electric field and electron transfer in physical space. The equilibrium absorption spectra at lattice temperatures of 80 and 295 K are presented.
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    Scattering of hot electrons by neutral acceptors in GaAs/AlAs quantum well structures (1998)
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    Semiconductors 32 (1998), S. 770-778 
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    Notes: Abstract The optical alignment of hot electrons and its destruction in a magnetic field under conditions when electron scattering by neutral acceptors plays a large role is investigated. This makes it possible to determine the probability of the scattering of hot electrons from an initial photoexcited state, as well as the times characterizing the energy and momentum relaxation of hot electrons on scattering by neutral acceptors. The experimental results are compared with calculations.
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    Effect of deposition and annealing conditions on the optical properties of amorphous silicon (1998)
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    Semiconductors 32 (1998), S. 782-784 
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    Notes: Abstract The spectral characteristics of the refractive index and the extinction coefficient in the range 0.6–2.0 eV for amorphous silicon films prepared by electron-beam evaporation with variation of the substrate temperature, deposition rate, and annealing temperature in air are presented. The results obtained are discussed on the basis of the changes in the Penn gap energy as a function of the indicated preparation and treatment conditions.
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    Defects and short-and medium-range order in the structural network of hydrogenated amorphous silicon (1998)
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    Semiconductors 32 (1998), S. 779-781 
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    Notes: Abstract The effect of defects (dangling Si-Si bonds) produced during the deposition of a-Si:H films by the glow-discharge method and upon boron doping, as well as photoinduced defects, on changes in the short-and medium-range order in the structural network is investigated. It is shown for a constant defect density N D=const that charged defects influence the a-Si:H structure much more strongly than do neutral defects.
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    Modification of the electron spectrum and vibrational properties of amorphous carbon by copper doping (1998)
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    Semiconductors 32 (1998), S. 831-837 
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    Source: Springer Online Journal Archives 1860-2000
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    Notes: Abstract The near-gap electron spectrum and the effective charge distribution in graphite-like carbon nanoclusters of simple geometry in a-C: H containing a single Cu atom are calculated in the tight-binding approximation. Only the coupling between π electrons of the constituent C atoms and one valence s electron of the Cu atom is taken into account. The binding energy of the Cu atom in the clusters and the static dipole moment of the clusters are calculated. The results are invoked to interpret the experimentally observed activation of the Raman G band in the IR spectrum of a-C: H: Cu as a consequence of a lowering of the symmetry of the graphite-like clusters due to copper intercalation. Experimental data on the time dependence of the G band intensity during isothermal annealing of a-C: H: Cu are presented. The data suggest the possibility of reversible transfer of Cu atoms between the impurity states in the copper-carbon clusters and the impurity states in the purely copper clusters. The average activation energies of direct and reverse transfer are estimated from the experiment.
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    Phase transitions occurring in glassy chalcogenide semiconductors induced by electric field or laser pulses (1998)
    Springer
    Semiconductors 32 (1998), S. 838-842 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Order-disorder phase transitions in thin films of glassy chalcogenide semiconductors of the system Ge-As-Te, which take place during times on the order of microseconds in micron-sized volumes, have been studied and analyzed. The relationship between the reversible structural transitions induced by laser light pulses and the reversible semiconductor-metal transition taking place in a strong electric field is discussed. It is shown that the film can be taken repeatedly through a reversible phase transition in the conductivity at ∼500–600 K, as previously established. It has been shown that repeated transition from the crystalline to the glassy state is possible without destruction of the material for a wide range of power levels for durations of the laser light pulse less than a few microseconds, and that this fact plays a decisive role in the reversible structural transformations. It is shown that the existence of such a range of power levels is attributable to overheating.
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    URL: http://dx.doi.org/10.1134/1.1187469
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    Toward understanding the photoinduced changes in chalcogenide glasses (1998)
    Springer
    Semiconductors 32 (1998), S. 850-854 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The various irreversible and reversible photoinduced phenomena in chalcogenide glasses, among them isotropic and anisotropic effects, were considered until now to have different origins. Upon reexamination, we find that the elemental photostructural steps are the same for all these phenomena. These are nonradiative recombinations via transient excitons yielding changes in local bonding configurations. The anisotropic changes arise from geminate recombinations of electron-hole pairs, which fail to diffuse out of the microvolume in which they were excited. A unified explanation of the large variety of photoinduced changes is presented.
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    URL: http://dx.doi.org/10.1134/1.1187471
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    Relaxation of photoinduced metastable states in a-Si:H films deposited at high temperatures (1998)
    Springer
    Semiconductors 32 (1998), S. 1134-1136 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The results of an experimental study of dark-conductivity kinetics in a-Si:H after short-term and long-term illumination, are presented. The films were deposited at temperatures in the range T s=300–390 °C. Data on relaxation of the photoinduced metastable states were found to correlate with the Fermi-level position.
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    Nonlinear waves of interacting charge carriers in semiconductors (1998)
    Springer
    Semiconductors 32 (1998), S. 1170-1172 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Nonideality effects of charge carriers in semiconductors have been theoretically demonstrated, being derived from the equation of state in the hydrodynamics approximation. The nonlinear terms in the density in the equation of state are conditioned by the Coulomb interaction and lead to the existence of solitary and periodic waves for perturbations of the charge-carrier density.
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    Molecular beam epitaxy of alternating-strain ZnSe-based multilayer heterostructures for blue-green lasers (1998)
    Springer
    Semiconductors 32 (1998), S. 1137-1140 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract High-quality ZnSe-based heterostructures are grown by uninterrupted molecular beam epitaxy using the concept of strain compensation and alternating-strain multilayers. To verify the advantages of this technique, optically pumped ZnSSe/ZnCdSe laser structures containing short-period superlattices or multiple quantum wells have been grown and studied. A room-temperature injection laser diode with a BeZnSe/ZnSe superlattice waveguide is described.
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    Experimental study of the transverse Ettingshausen-Nernst effect and thermoelectric power in the presence of a large temperature gradient (1998)
    Springer
    Semiconductors 32 (1998), S. 1168-1169 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The transverse Ettingshausen-Nernst effect and the thermoelectric power of compensated germanium with electron density n=2×1011 cm−3 are investigated as a function of the temperature gradient in the range 2−1.5×103 K·cm−1 at average temperature 350 K. It is shown that the mechanism of charge-carrier scattering does not depend on the temperature gradient, while the Benedick thermoelectric power is due to heating of the current carriers by the heat field.
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    URL: http://dx.doi.org/10.1134/1.1187583
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    Formation of Se2 quasimolecules in selenium-doped silicon (1998)
    Springer
    Semiconductors 32 (1998), S. 1162-1167 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The kinetics of the formation of impurity complexes associated with selenium is investigated. The stationary density of complexes is obtained as a function of temperature and the density of selenium atoms that occupy silicon lattice sites. It is established that in the process of interconversions of electrically active complexes in the temperature range 670–1000 °C the total number of atoms participating in complex-forming reactions remains unchanged at any point of the spatial distribution of the impurity. The kinetics of accumulation of centers with ionization energy 0.2 eV is satisfactorily described by a scheme of quasichemical reactions leading to the formation and decomposition of Se2 quasimolecules. In the ideal, strongly dilute solution approximation the binding energy of a Se2 quasimolecule is 1.35 eV.
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    Features of the current-voltage characteristics of long semiconductor structures under ultrahigh-level double-injection conditions (1998)
    Springer
    Semiconductors 32 (1998), S. 1318-1322 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The widespread use of low-resistivity materials in modern solid-state electronics calls for an analysis of the current-voltage characteristics of long semiconductor structures under ultrahighlevel double-injection conditions. It is shown that the pure plasma model of semiconductors is not applicable in such an analysis, since the concentration dependence of the carrier mobility μ(n) must be taken into account. The conditions for the appearance of highly superlinear current-voltage characteristics in the region of the initial variation of μ(n) due only to the rate of variation of the mobility of the majority carriers (the λ effect) are analyzed. The λ effect is manifested on the experimental current-voltage characteristics in the form of sharp current jumps and corresponding high values of the differential order of the current-voltage (J-V) characteristic (a=d log J/d log V), which are determined by the variation of the differential order of the concentration dependence of the carrier mobility λ(n)=d log μ/d log n. A calculation shows that the mechanism for the appearance of the λ effect can be determined at injection levels as high as ∼1017 cm−3.
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    Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(bd001) surfaces misoriented in the [010] direction in the active region (1998)
    Springer
    Semiconductors 32 (1998), S. 1323-1327 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The electroluminescence and stimulated emission of lasers with one layer of InAs quantum dots (QD’s) grown in a single molecular-beam epitaxial process on vicinal GaAs(001) surfaces misoriented in the direction [010] by 2, 4 and 6° are investigated. It is discovered that an increase in the misorientation angle leads to a blue shift and a decrease in the full width at half maximum (FWHM) of the electroluminescence spectrum. This effect is attributed to a decrease in the size of the quantum dots and improvement in their size uniformity. A strong dependence of the threshold current density on the width of the spontaneous luminescence spectrum is discovered. The room-temperature threshold current density of the lasers with one layer of quantum dots and the spontaneous luminescence spectrum having the smallest FWHM (54 meV) equals 210 A/cm2.
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    Erratum: Autosolitons in InSb in a magnetic field [Semiconductors 32, 625–628 (June 1988)] (1998)
    Springer
    Semiconductors 32 (1998), S. 1330-1330 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
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    Exciton characteristics of intercalated TlGaSe2 single crystal (1998)
    Springer
    Semiconductors 32 (1998), S. 131-132 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract It is shown that lithium-ion intercalation of TlGaSe2 single crystal leads to a shift of the exciton peak associated with the direct edge toward longer wavelengths (ΔE=15 meV at 5 K). As a result, the temperature shift of the exciton peak in TlGaSe2(∂E ex/∂T) decreases more than twofold in absolute value to −1.1×10−4 eV/K at 20≲T≲105 K and −0.25×10−4 eV/K at 5≲T≲20 K. Lithium-ion (Li+) intercalation of TlGaSe2 has almost no effect on the energy position of the exciton associated with indirect transitions.
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    Recombination of charge carriers in dislocation-free silicon containing growth microdefects of various types (1998)
    Springer
    Semiconductors 32 (1998), S. 117-119 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The temperature and injection dependence of the charge-carrier lifetime in dislocation-free n-Si is analyzed, making it possible to characterize the recombination activity of various types of microdefects. The parameters of the primary recombination centers with A-and B-type microdefects have been found.
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    Diffusion doping of undoped hydrogenated amorphous silicon with tin (1998)
    Springer
    Semiconductors 32 (1998), S. 123-123 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The solubility of tin in undoped, hydrogenated, amorphous silicon is determined by diffusion-doping films of this material with the radioactive isotope 119m Sn. The temperature dependence of the tin solubility is described by the relation S[cm−3]=4×1022 exp(−0.46/kT[eV]).
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    Radiation defect formation in Ge-doped silicon as a result of low-temperature irradiation (1998)
    Springer
    Semiconductors 32 (1998), S. 120-122 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract An investigation of the influence of germanium doping (⩽1 at. %) on the formation efficiency of the main secondary radiation defects in silicon under low-temperature (T⩽90 K) electron irradiation has been carried out. The significant decrease of the formation efficiency of A and V 2 centers in Si〈Ge〉 is explained by assuming that the germanium atoms are indirect recombination centers of primary radiation defects (V and I) in Si〈Ge〉.
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    Deformation potentials of the Γ(000) band extrema in CdGa2S4 (1998)
    Springer
    Semiconductors 32 (1998), S. 133-135 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract For the ternary compound CdGa2S4 the values of the contributions to the temperature coefficient of the absorption edge due to lattice dilatation (dE/dT)L and the electron-phonon interaction (dE/dT)eph are found. The deformation potentials of the bottom of the conduction band (12.3 eV) and top of the valence band (−10.9 eV) are calculated.
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    Ultrashallow p +-n junctions in silicon (100): Electron-beam diagnostics of the surface zone (1998)
    Springer
    Semiconductors 32 (1998), S. 124-130 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Ultrashallow p +-n junctions formed in silicon (100) under nonequilibrium impurity diffusion conditions are analyzed by electron-beam diagnostics of the surface zone using a probe of low-to medium-energy electrons. The energy dependence of the radiation conductivity is investigated, along with its distribution over the area of the p +-n junction. This procedure can be used to determine the depth distribution (in the crystal) of the probability of separation of electron-hole pairs by the field of the p-n junction; the experimental results show that this distribution differs according to whether the kick-out mechanism or the dissociative vacancy mechanism of impurity diffusion is predominant as the basis of formation of the ultrashallow p +-n junctions. Also reported here for the first time are the results of investigations of the distribution of secondary point centers formed near the boundary of the ultrashallow diffusion profile, which exert a major influence on the transport of nonequilibrium carriers. The data obtained in the study demonstrate the possibility of improving the efficiency of photodetectors, α-particle detectors, and solar batteries constructed on the basis of ultrashallow p-n junctions.
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    Resonant tunneling dynamics of heterostructures based on semiconductors with two-valley spectra (1998)
    Springer
    Semiconductors 32 (1998), S. 1214-1221 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Time-dependent characteristics of electron resonant tunneling in quantum heterostructures based on GaAs and AlAs are investigated using the two-valley model. Analysis of the phases of the transmitted and reflected waves yields analytic expressions for tunneling and reflection times. The solution to the problem incorporates the decay of Γ-and X-valley resonant states in these heterostructures. Numerical solution of the nonstationary Schrödinger equation is used to demonstrate the tunneling of wave packets through double-barrier heterostructures.
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    URL: http://dx.doi.org/10.1134/1.1187594
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    The spectrum of real-space indirect magnetoexcitons (1998)
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    Semiconductors 32 (1998), S. 1206-1213 
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    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract This paper discusses two-dimensional excitons with spatially separated electrons and holes in coupled quantum wells and vertically coupled quantum dots in a transverse magnetic field for a wide range of two characteristic quantities of the problem-the distance between wells or dots d and the magnetic field H. Dispersion relations E nm(P) are calculated for coupled quantum wells at various values of d and H (where P, the magnetic momentum along the well, is a conserved quantity in the magnetic field). The spectrum is calculated by numerically diagonalizing the Hamiltonian in various bases—either a Coulomb or a Landau basis (the choice of basis is determined by the value of effective magnetic field). Asymptotic energy dependences (with respect to d, H, P) are determined analytically. As the momentum P increases, the exciton spectrum in a weak fixed H crosses over from Coulombic to magnetic, and for large P consists of bands adjacent to the Landau levels. Also discussed is the problem of an electron spatially separated from a charged impurity in coupled quantum wells.
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    URL: http://dx.doi.org/10.1134/1.1187593
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