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  • grazing-incidence small-angle X-ray scatteringGISAXSbeam footprintlithographic inspectiongratings  (2)
  • high-pressure barium phasesincommensurately modulated structuresBa IVbatomic density waveshost–guest structures  (2)
  • International Union of Crystallography (IUCr)  (4)
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  • International Union of Crystallography (IUCr)  (4)
Years
  • 1
    Publication Date: 2018-06-26
    Description: An error in the paper by Pflüger, Soltwisch, Probst, Scholze & Krumrey [IUCrJ (2017), 431–438] is corrected.
    Keywords: grazing-incidence small-angle X-ray scatteringGISAXSbeam footprintlithographic inspectiongratings
    Electronic ISSN: 2052-2525
    Topics: Geosciences , Physics
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  • 2
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    International Union of Crystallography (IUCr)
    In: IUCrJ
    Publication Date: 2017-02-24
    Keywords: high-pressure barium phasesincommensurately modulated structuresBa IVbatomic density waveshost–guest structures
    Electronic ISSN: 2052-2525
    Topics: Geosciences , Physics
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  • 3
    Publication Date: 2017-05-25
    Description: Grazing-incidence small-angle X-ray scattering (GISAXS) is often used as a versatile tool for the contactless and destruction-free investigation of nanostructured surfaces. However, due to the shallow incidence angles, the footprint of the X-ray beam is significantly elongated, limiting GISAXS to samples with typical target lengths of several millimetres. For many potential applications, the production of large target areas is impractical, and the targets are surrounded by structured areas. Because the beam footprint is larger than the targets, the surrounding structures contribute parasitic scattering, burying the target signal. In this paper, GISAXS measurements of isolated as well as surrounded grating targets in Si substrates with line lengths from 50 µm down to 4 µm are presented. For the isolated grating targets, the changes in the scattering patterns due to the reduced target length are explained. For the surrounded grating targets, the scattering signal of a 15 µm × 15 µm target grating structure is separated from the scattering signal of 100 µm × 100 µm nanostructured surroundings by producing the target with a different orientation with respect to the predominant direction of the surrounding structures. As virtually all lithographically produced nanostructures have a predominant direction, the described technique allows GISAXS to be applied in a range of applications, e.g. for characterization of metrology fields in the semiconductor industry, where up to now it has been considered impossible to use this method due to the large beam footprint.
    Keywords: grazing-incidence small-angle X-ray scatteringGISAXSbeam footprintlithographic inspectiongratings
    Electronic ISSN: 2052-2525
    Topics: Geosciences , Physics
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  • 4
    Publication Date: 2017-01-21
    Description: The host–guest structures of elements at high pressure discovered a decade ago still leave many open questions due to the lack of precise models based on full exploitation of the diffraction data. This concerns in particular Ba IV, which is stable in the range 12–45 GPa. With the example of phase Ba IVb, which is characterized here for the first time, a systematic analysis is presented of possible host–guest structure models based on high-quality single-crystal diffraction data obtained with synchrotron radiation at six different pressures between 16.5 and 19.6 GPa. It is shown that a new incommensurately modulated (IM) structure model better fits the experimental data. Unlike the composite models which are commonly reported for the Ba IV phases, the IM model reveals a density wave and its pressure-dependent evolution. The crucial role played by the selected model in the interpretation of structure evolution under pressure is discussed. The findings give a new experimental basis for a better understanding of the nature of host–guest structures.
    Keywords: high-pressure barium phasesincommensurately modulated structuresBa IVbatomic density waveshost–guest structures
    Electronic ISSN: 2052-2525
    Topics: Geosciences , Physics
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