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  • ENERGY PRODUCTION AND CONVERSION  (2,591)
  • ddc:330
  • 1980-1984  (2,591)
  • 1
    Publication Date: 2006-02-14
    Description: The design and operations of a low cost, high rate thermal cycling facility designed for LEO conditions is described. Thermal cycling facilities were constructed with various design criteria. Some were designed to duplicate as closely as possible the conditions a cell or module would encounter while in orbit about the Earth. A typical facility to perform this type of cycling was a large vacuum system with liquid nitrogen cooled walls. The cells were heated by an AMO spectrum solar simulator, then a shutter was closed allowing the cells to give up their heat to the cold walls. This system was good at duplicating the orbital conditions but was slow and very costly to operate. Other systems used a gas atmosphere and heated the cells with radiant heat and cooled the cells by moving them into close proximity to a cold plate. The systems greatly increased the cycle times. Other systems moved the heating and cooling atmosphere into and out of the test areas and achieved reasonable cycle rates. All these systems, however, are expensive to operate.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: Space Photovoltaic Res. and Technol. 1983; p 223-227
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  • 2
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    In:  CASI
    Publication Date: 2006-02-14
    Description: The development of the GaAs solar cells for space applications is described. The activities in the fabrication of GaAs solar panels are outlined. Panels were fabricated while introducing improved quality control, soldering laydown and testing procedures. These panels include LIPS II, San Marco Satellite, and a low concentration panel for Rockwells' evaluation. The panels and their present status are discussed.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: NASA. Lewis Research Center Space Photovoltaic Res. and Technol. 1983; p 205-209
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  • 3
    Publication Date: 2006-02-14
    Description: The solar array for the San Marco D/L spacecraft is described and the performance of 4 GaAs solar cell panels are examined. In comparison to the typical Si solar cell panel for San Marco D/L, it is shown that each GaAs solar cell panel provides at least 23 percent more specific power at maximum output and 28 deg C. Also described here, are several measurements that will be made to evaluate the relative performance of Si and GaAs solar cell panels during the San Marco D/L flight.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: NASA. Lewis Research Center Space Photovoltaic Res. and Technol. 1983; p 176-181
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  • 4
    Publication Date: 2006-02-14
    Description: The results of heteroepitaxial growth of GaAs and GaAlAs directly on Si are presented, and applications to new cell structures are suggested. The novel feature is the elimination of a Ge lattice transition region. This feature not only reduces the cost of substrate preparation, but also makes possible the fabrication of high efficiency monolithic cascade structures. All films to be discussed were grown by organometallic chemical vapor deposition at atmospheric pressure. This process yielded reproducible, large-area films of GaAs, grown directly on Si, that are tightly adherent and smooth, and are characterized by a defect density of 5 x 10(6) power/sq cm. Preliminary studies indicate that GaAlAs can also be grown in this way. A number of promising applications are suggested. Certainly these substrates are ideal for low-weight GaAs space solar ells. For very high efficiency, the absence of Ge makes the technology attractive for GaAlAs/Si monolithic cascades, in which the Si substrates would first be provided with a suitable p/n junction. An evaluation of a three bandgap cascade consisting of appropriately designed GaAlAs/GaAs/Si layers is also presented.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: NASA. Lewis Research Center Space Photovoltaic Res. and Technol. 1983; p 128-139
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  • 5
    Publication Date: 2006-02-14
    Description: Deep level transient spectroscopy reveals that the main electron traps for one-MeV electron irradiated GaAs cells are E9c)-0.31, E(c)-0.90 eV, and the main hole trap is due to the level. Electron trap density was found to vary from 3/tens-trillion ccm for 2/one quadrillion cm 3/3.7 quadrillion cm for 21 sextillion cm electron fluence for electron fluence; a similar result was also obtained for the hole trap density. As for the grown-in defects in the Al(x)Ga(1-x)As p-n junciton cells, only two electron traps with energies of E(c)-0.20 and E(c)-0.34 eV were observed in samples with x = 0.17, and none was found for x 0.05. Auger analysis on the Al(x)Ga(1-x) As window layer of the GaAs solar cell showed a large amount of oxygen and carbon contaminants near the surface of the AlGaAs epilayer. Thermal annealing experiment performed at 250 C for up to 100 min. showed a reduction in the density of both electron traps.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: NASA. Lewis Research Center Space Photovoltaic Res. and Technol. 1983; p 91-101
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  • 6
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    In:  CASI
    Publication Date: 2006-02-14
    Description: A short circuit current (I sub sc) degradation model for gallium arsenide (GaAs) solar cells irradiated by protons from low energy to 100 MeV was developed. This model was found to be satisfactory in predicting the I sub sc degradation of GaAs cells, but not that of silicon (Si) cells. A modification to the aforementioned model that preserves the optical wavelength dependency in the photogeneration of minority carrier pairs was described herein. Spectral Si and GaAs response and I sub sc for the Si and GaAs solar cells were discussed, and also were presented in graph form. The overall predictability of the modified model was deemed to be satisfactory.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: NASA. Lewis Research Center Space Photovoltaic Res. and Technol. 1983; p 56-62
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  • 7
    Publication Date: 2006-02-14
    Description: Manufacturing technology for mass producing high efficiency GaAs solar cells is discussed. A progress using a high throughput MO-CVD reactor to produce high efficiency GaAs solar cells is discussed. Thickness and doping concentration uniformity of metal oxide chemical vapor deposition (MO-CVD) GaAs and AlGaAs layer growth are discussed. In addition, new tooling designs are given which increase the throughput of solar cell processing. To date, 2cm x 2cm AlGaAs/GaAs solar cells with efficiency up to 16.5% were produced. In order to meet throughput goals for mass producing GaAs solar cells, a large MO-CVD system (Cambridge Instrument Model MR-200) with a susceptor which was initially capable of processing 20 wafers (up to 75 mm diameter) during a single growth run was installed. In the MR-200, the sequencing of the gases and the heating power are controlled by a microprocessor-based programmable control console. Hence, operator errors can be reduced, leading to a more reproducible production sequence.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: NASA. Lewis Research Center Space Photovoltaic Res. and Technol. 1983; p 18-24
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  • 8
    Publication Date: 2006-02-14
    Description: Various coatings developed in the FRG (i.e., second-surface mirrors with interference filters with and without conductive layers, conductive layers on solar-cell covers, and selective absorber coatings) have been qualified by accelerated tests under simulated space environment conditions. Experiments with coatings and solar cells have shown, however, that the thermo-optical behavior can differ considerably when performed on the ground and in space because of the great difficulty in simulating the space environment realistically. The objective of this experiment is to qualify these coatings under realistic space environment conditions. In addition, the experiment will provide design criteria, techniques, and test methods to insure control of the combined space and spacecraft environment effects, such as contamination, electrical conductance, and optical degradation, on the coatings. Data to be measured include the temperature of the samples, the electrical resistance of the conductive layers of the samples, the short circuit current of the solar-cell modules, and the deposition of contaminants on the samples (using quartz crystal microbalances (QCM's)).
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: NASA. Langley Research Center Long Duration Exposure Facility (LDEF); p 91-93
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  • 9
    Publication Date: 2006-02-14
    Description: The objective of this experiment is to evaluate the synergistic effects of the space environment on various solar-array materials, including solar cells, cover slips with various antireflectance coatings, adhesive, encapsulants, reflector materials, substrate strength materials, mast and harness materials, structural composites, and thermal control treatments. The experiment is passive and consists of an arrangement of material specimens mounted in a 3-in.-deep peripheral tray. The effects of the space environment on the specimens will be determined by comparison of preflight and postflight measurements of mechanical, electrical, and optical properties.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: NASA. Langley Research Center Long Duration Exposure Facility (LDEF); p 86-87
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  • 10
    Publication Date: 2006-02-14
    Description: A model that explains the flat-spot power loss phenomenon is presented. Evidence suggests that the effect is due to localized metallurgical interactions between the silicon substrate and the contact metallization. These reactions are shown to result in localized regions in which the P-N junction is destroyed and replaced with a metal semiconductor-like interface. The effects of thermal treatment, crystallographic orientation, junction depth, and metallization are shown along with a method of preventing the effect through the suppression of vacancy formation at the free surface of the contact metallization. Data indicating the effectiveness of a TiN diffusion barrier in preventing the effect are also given.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: ESA Photovoltaic Generators in Space; p 65-70
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