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  • 1
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    Study of optoelectronic switch for satellite-switched time-division multiple access (1987)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: The use of optoelectronic switching for satellite switched time division multiple access will improve the isolation and reduce the crosstalk of an IF switch matrix. The results are presented of a study on optoelectronic switching. Tasks include literature search, system requirements study, candidate switching architecture analysis, and switch model optimization. The results show that the power divided and crossbar switching architectures are good candidates for an IF switch matrix.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-CR-179630 , NAS 1.26:179630
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 2
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    Millimeter-wave diode-grid frequency doubler (1988)
    In:  Other Sources
    Details
    Publication Date: 2019-07-12
    Description: Monolithic diode grids were fabricated on 2-cm square gallium-arsenide wafers in a proof-of-principle test of a quasi-optical varactor millimeter-wave frequency multiplier array concept. An equivalent circuit model based on a transmission-line analysis of plane wave illumination was applied to predict the array performance. The doubler experiments were performed under far-field illumination conditions. A second-harmonic conversion efficiency of 9.5 percent and output powers of 0.5 W were achieved at 66 GHz when the diode grid was pumped with a pulsed source at 33 GHz. This grid had 760 Schottky-barrier varactor diodes. The average series resistance was 27 ohms, the minimum capacitance was 18 fF at a reverse breakdown voltage of -3 V. The measurements indicate that the diode grid is a feasible device for generating watt-level powers at millimeter frequencies and that substantial improvement is possible by improving the diode breakdown voltage.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: AD-A205028 , IEEE Transactions on Microwave Theory and Techniques (ISSN 0018-9480); 36; 1507-151
    Format: text
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    NASA TECHNICAL REPORTS
  • 3
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    Optoelectronic techniques for broadband switching (1988)
    In:  Other Sources
    Details
    Publication Date: 2019-07-13
    Description: Optoelectronic switching employs a hybrid optical/electronic principle to perform the switching function and is applicable for either analog broadband or high-bit rate digital switching. The major advantages of optoelectronic switching include high isolation, low crosstalk, small physical size, light weight, and low power consumption. These advantages make optoelectronic switching an excellent candidate for on-board satellite switching. This paper describes a number of optoelectronic switching architectures. System components required for implementing these switching architectures are discussed. Performance of these architectures are evaluated by calculating their crosstalk, isolation, insertion loss, matrix size, drive power, throughput, and switching speed. Technologies needed for monolithic optoelectronic switching are also identified.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Optoelectronic Signal Processing for Phased-Array Antennas; Jan 12, 1988 - Jan 13, 1988; Los Angeles, CA; United States
    Format: text
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    NASA TECHNICAL REPORTS
  • 4
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    Millimeter-wave diode-grid phase shifters (1988)
    In:  Other Sources
    Details
    Publication Date: 2019-07-12
    Description: Monolithic diode grids have been fabricated on 2-cm square gallium-arsenide wafers with 1600 Schottky-barrier varactor diodes. Shorted diodes are detected with a liquid-crystal technique, and the bad diodes are removed with an ultrasonic probe. A small-aperture reflectometer that uses wavefront division interference was developed to measure the reflection coefficient of the grids. A phase shift of 70 deg with a 7-dB loss was obtained at 93 GHz when the bias on the diode grid was changed from -3 V to 1 V. A simple transmission-line grid model, together with the measured low-frequency parameters for the diodes, was shown to predict the measured performance over the entire capacitive bias range of the diodes, as well as over the complete reactive tuning range provided by a reflector behind the grid, and over a wide range of frequencies from 33 GHz to 141 GHz. This shows that the transmission-line model and the measured low-frequency diode parameters can be used to design an electronic beam-steering array and to predict its performance. An electronic beam-steering array made of a pair of grids using state-of-the-art diodes with 5-ohm series resistances would have a loss of 1.4 dB at 90 GHz.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: AD-A204376 , AD-A204436 , IEEE Transactions on Microwave Theory and Techniques (ISSN 0018-9480); 36; 902-907
    Format: text
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    NASA TECHNICAL REPORTS
  • 5
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    Watt-level millimeter-wave monolithic diode-grid frequency multipliers (1988)
    In:  Other Sources
    Details
    Publication Date: 2019-07-12
    Description: Wall-level CW solid-state sources in the millimeter-wave region are needed for plasma diagnostics. Monolithic metal-grid arrays containing in excess of 1000 Schottky diodes have produced watt-level output at 66 GHz in a doubler configuration, in excellent agreement with the large-signal predictions of the frequency multiplication. Current efforts are concentrated on fabricating and developing arrays of a novel barrier-intrinsic-N+ (BIN) diode which promise increased performance in a tripler configuration. Initial tests will be made for a configuration where a tripling efficiency of 35 percent at an output frequency of 100 GHz is predicted. Eventual goals are monolithic BIN diode grids operating at 1 THz.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Review of Scientific Instruments (ISSN 0034-6748); 59; 1577-157
    Format: text
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    NASA TECHNICAL REPORTS
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