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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 1651-1655 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A nonequilibrium thermodynamic theory known as extended irreversible thermodynamics is used to obtain the frequency- and wave vector-dependent generalized viscosity for dilute suspensions. Comparison with a microhydrodynamical calculation by Bedeaux, Kapral, and Mazur allows one to obtain explicit expressions for the coefficients appearing in the macroscopic generalized viscosity.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 85 (1986), S. 5314-5316 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Starting from the generalized entropy of extended irreversible thermodynamics, we study the influence of the electric current on the probability of finding a system in a state of given energy and electrical conductivity. As an application, we study the probability of open and closed pores in a membrane.
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 1339-1344 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The relation predicted by extended irreversible thermodynamics between the nonequilibrium entropy and the frequency-dependent viscosity is confirmed from kinetic theory for dilute dumbbell solutions under shear. New relations between nonequilibrium entropy and the coefficients of the constitutive equations are discussed.
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 34 (1993), S. 2290-2316 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The domain of applicability of one-point kinetic theory is enlarged by admitting two-point distribution functions or some of their moments as extra state variables. Kinetic equations governing the time evolution in the extended state space are introduced as particular realizations of the nonlinear Onsager–Casimir equation. This abstract equation collects the common structure of equations arising in the analysis of compatibility of two levels of description (e.g., kinetic theory and equilibrium thermodynamics or kinetic theory and hydrodynamics). The structure consists of a Poisson bracket and two potentials. The Poisson bracket expresses kinematics, the first potential, called the thermodynamic potential, generates the time evolution and links the theory with thermodynamics. The second potential, called the dissipative potential, introduces dissipation into the time evolution that is compatible with the kinematics and thermodynamics. To find a particular realization of the nonlinear Onsager–Casimir equation means to identify kinematics (Poisson bracket) and the two potentials, that correspond to a particular system and situations under consideration. This way of introducing kinetic equations has two advantages. First, the kinetic equations are guaranteed to be intrinsically consistent and compatible with more macroscopic theories. Second, the clear physical meaning of kinematics and the two potentials, together with the possibility of discussing them separately, allows one to use a broad range of physical insights and considerations to specify them for particular systems and situations of interest.
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 116 (2002), S. 1571-1584 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A higher-order hydrodynamics for material motion in fluids, under arbitrary nonequilibrium conditions, is constructed. We obtain what is a generalized—to that conditions—Fick-type Law. It includes a representation of Burnett-type contributions of all order, in the form of a continuous-fraction expansion. Also, the equation includes generalized thermodynamic forces, which are characterized and discussed. All kinetic coefficients are given as correlations of microscopic mechanical quantities averaged over the nonequilibrium ensemble, and then are time- and space-dependent as a consequence of accounting for the dissipative processes that are unfolding in the medium. An extended evolution equation for the density of particles is derived, and the conditions when it goes over restricted forms of the type of the telegraphist equation and Fick's diffusion equation are presented. © 2002 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1472-1475 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The III-V metastable alloy InP1−x Sbx has been grown for the first time with compositions well inside the miscibility gap. Despite the large miscibility gap at the growth temperatures of 480–600 °C, epilayers with compositions covering the entire range from x=0 to 1.0 have been grown successfully by organometallic vapor-phase epitaxy at atmospheric pressure using the reactants trimethylindium, trimethylantimony, and phosphine. The 10-K energy band gap as a function of composition was determined from photoluminescence measurements combined with x-ray diffraction and electron microprobe analysis. The bowing parameter for the band-gap energy of the InP1−x Sbx was estimated to be 1.9±0.1 eV. The lattice dynamics have been studied using Raman spectroscopy in the frequency range from 150 to 400 cm−1. Long wavelength optical phonons display a "two-mode'' behavior throughout the entire composition range. The InP-like longitudinal-optical and transverse-optical modes shift to lower frequency with increasing Sb concentration.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 1577-1579 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Watt-level cw solid-state sources in the millimeter-wave region are needed for plasma diagnostics. Monolithic metal-grid arrays containing in excess of 1000 Schottky diodes have produced watt-level output at 66 GHz in a doubler configuration, in excellent agreement with the large-signal predictions of the frequency multiplication. Current efforts are concentrated on fabricating and developing arrays of a novel barrier-intrinsic-N+ (BIN) diode which promise increased performance in a tripler configuration. Initial tests will be made for a configuration where a tripling efficiency of 35% at an output frequency of 100 GHz is predicted. Eventual goals are monolithic BIN diode grids operating at 1 THz.
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  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 104 (1996), S. 5745-5753 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Sulfur trioxide (SO3) isolated in solid argon at 12 K was irradiated with light at 193 nm from an ArF excimer laser. Recombination of photofragments O and SO2 produces OSOO that absorbs at 1229.6, 1041.3, and 597.6 cm−1. The assignments are based on observed 34S- and 18O-isotopic shifts. Theoretical calculations using the B-P86 and the B3-LYP density functional methods were carried out for five isomers of SO3; energies and vibrational wave numbers were predicted for each one. Observed line positions, infrared intensities, and isotopic shifts fit well with those predicted for cis-OSOO at the B-P86 level. Further irradiation of the matrix sample with emission at 248 nm from a KrF laser bleached OSOO and enhanced absorption lines of SO2 and, to a lesser extent, of SO3. The mechanism of formation of OSOO in a matrix cage is discussed. © 1996 American Institute of Physics.
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  • 9
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Neutron-diffraction and ac-susceptibility measurements have been performed to study the effects of Ga doping on the magnetic ordering of the Pr in PrBa2(Cu1−xGax)3O7. The Ga atoms preferentially replace the Cu atoms in the CuO-chain layers, and this substitution is found to decrease the antiferromagnetic ordering temperature as the Ga concentration is increased. In addition, the spin arrangement along the c axis is found to change from nearest neighbors being antiparallel for x=0 to nearest neighbors being parallel for x=0.08 (24% Cu chain substitution); for an intermediate x of 0.04 a mixture of the two spin structures is observed. The susceptibility results exhibit Curie–Weiss behavior above TN, and departures from this behavior in the ordered state.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1781-1786 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: p-n Ga0.65In0.35P homostructure light-emitting diodes grown on GaAs0.7P0.3 substrates have been fabricated by low-pressure metalorganic vapor-phase epitaxy. The growth and characterization of undoped, Si-, and Zn-doped layers are described in detail. The optimum growth condition to grow the high-quality Ga0.65In0.35P epitaxial layers is at the growth temperatures of 700–740 °C and V/III ratios of 100–200. The strongest photoluminescence peak intensity occurs at 2×1018 and 7×1017 cm−3 for electron and hole concentrations, respectively. Diodes fabricated from the p-n homostructure are characterized by current-voltage measurement, electroluminescence, and external quantum efficiency. A forward-bias turn-on voltage of 1.68 V with an ideality factor of 2.5 and a breakdown voltage of 9 V are obtained from the current-voltage measurements. The emission peak wavelength and full width at half-maximum of electroluminescence are around 610 nm and 79 meV at 20 mA. The external quantum efficiency of the uncoated diode is about 0.015%.
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