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  • Articles  (5)
  • mass spectrometry  (5)
  • Springer  (5)
  • American Geophysical Union (AGU)
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  • 1980-1984  (5)
  • 1935-1939
  • Technology  (5)
  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Plasma chemistry and plasma processing 3 (1983), S. 219-234 
    ISSN: 1572-8986
    Keywords: Silicon/hydrogen discharge ; mass spectrometry ; chemical relaxation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The chemical relaxation technique consists of measuring the response of a chemical system to a small disturbance of an equilibrium or a nonequilibrium steady state. Since, for a small perturbation, the response of any complex and stable system is linear, rate constants of elementary processes under actual plasma conditions can be evaluated directly from the relaxation data. Applications of this technique to the kinetic study of the formation and decomposition of silane are presented and compared with previous data obtained by a flow method. In addition, relaxation data are presented which show that the main reaction channel of silance decomposition in glow discharges is the electron-impact-induced fragmentation into SiH2 radicals (or ions) and H2 molecules.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Plasma chemistry and plasma processing 2 (1982), S. 81-93 
    ISSN: 1572-8986
    Keywords: Plasma ; mass spectrometry ; electron impact dissociation ; radical reactions ; ion-molecule reactions
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract This paper reports on a mass spectrometric study of the neutral and ionic species in a low-pressure rf discharge sustained in a C2H4-SiH4 mixture diluted in helium. It is shown that C2H4 is readily decomposed into C2H 2 * and C2H3. The formation of secondary products such as C4H2, C4H4, and C4H6 is observed and confirms the presence of C2H2 in the discharge. Methylsilane (CH3SiH3) and ethylsilane (C2H5SiH3) are also synthesized in this discharge. It is also observed that the major ions C2H 4 + , C3H 5 + , SiH 3 + , Si2H 4 + , SiCH 3 + , SiC2H 3 + , and SiC2H 7 + are not representative of the direct ionization of neutral species. Their formation is thus interpreted on the basis of ion-molecule reactions.
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Plasma chemistry and plasma processing 2 (1982), S. 95-107 
    ISSN: 1572-8986
    Keywords: Hydrogen plasma ; silicon deposition ; kinetic study ; mass spectrometry
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The kinetics of the silicon/hydrogen low-pressure discharge system have been measured using a flow technique and mass spectrometry. Results show that at long residence times the system operates under a partial chemical equilibrium even though it is not at thermodynamic equilibrium. The present work indicates that the decisive parameter controlling the structural properties of the deposit (i.e., the formation of either amorphous or microcrystalline silicon) is the departure of the system from the partial chemical equilibrium.
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Plasma chemistry and plasma processing 4 (1984), S. 235-249 
    ISSN: 1572-8986
    Keywords: Ionization cross section ; electron impact ; mass spectrometry
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Electron impact ionization of carbon tetrachloride was studied as a function of electron energy from threshold up to 180 eV. A double-focusing mass spectrometer system in combination with an improved electron impact ion source was used, alleviating the problems of ion extraction from the source and the transmission of the extracted ions through the mass spectrometer system. Absolute partial ionization cross sections for the occurrence of CCl 3 + , CCl 2 + , CCl+, Cl 2 + , Cl+, C+, CCl 3 2+ , and CCl 2 2+ have been determined. In addition, the total ionization cross-section function of CCl4 is reported and compared with theoretical predictions based on a classical binary encounter approximation. Using nth root extrapolation the following ionization energies of the doubly ionized fragment ions have been derived: AE(CCl 3 2+ )=30.4±0.3 eV; and AE (CCl 2 2+ )=31.8±0.3 eV. In accordance with theoretical predictions and previous results, no stable CCl 4 + has been detected, however, metastable dissociation processes CCl 4 + → CCl 3 + have been observed.
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Plasma chemistry and plasma processing 4 (1984), S. 261-270 
    ISSN: 1572-8986
    Keywords: Silicon films ; low-pressure rf discharges ; mass spectrometry
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Silicon films were deposited from tetrachlorosilane by its dissociation in argon and hydrogen rf plasma at a pressure of 2 Torr. The concentration of chlorine incorporated in the films was found to be dependent on the macrovariables of the plasma such as power input and substrate position in the plasma reactor. Mass spectrometric measurements of the plasma showed that the concentration of HCl in the plasma was strongly dependent on the power input and on position in the plasma along the gas stream. At high input powers the HCl formed in the plasma dissociates to free radicals, contributing to a recombination process in the gas phase and codeposition with silicon on the substrate. The correlation between the HCl reactions in the plasma and the incorporation of Cl in the deposit is shown.
    Type of Medium: Electronic Resource
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