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  • Articles  (4)
  • Plasma  (4)
  • Springer  (4)
  • American Geophysical Union
  • American Geophysical Union (AGU)
  • Annual Reviews
  • Blackwell Publishing Ltd
  • 1980-1984  (4)
  • 1935-1939
  • Technology  (4)
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  • Articles  (4)
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  • Springer  (4)
  • American Geophysical Union
  • American Geophysical Union (AGU)
  • Annual Reviews
  • Blackwell Publishing Ltd
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  • 1
    Electronic Resource
    Electronic Resource
    Reduction and dephosphorization of molten iron oxide with hydrogen-argon plasma (1981)
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. 149-160 
    Details
    ISSN: 1572-8986
    Keywords: Plasma ; reduction ; iron oxide ; hydrogen dephosphorization ; reaction rate
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract A laboratory-scale test was made in which iron oxide contained in a water-cooled crucible was melted and reduced by using a 10–50% H2-Ar transferred arc plasma. The degree of reduction was found to be proportional to the amount of hydrogen fed. The efficiency of hydrogen utilization for the reduction was 50–70%, which is much higher than equilibrium values below 3000 K. This high efficiency was attributable partially to the reactivity of the hydrogen atom in a plasma and partially to the continuous contact of the hydrogen plasma with the molten iron oxide layer floating over the liquid iron formed. During the plasma reduction, evaporative loss of phosphorus was observed. The degree of phosphorus removal depended on the weight ratio, CaO/(SiO2+Al2O3). H2-Ar plasma was shown to be far superior for the phosphorus removal, compared with Ar and Ar-N2 plasma.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00564577
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  • 2
    Electronic Resource
    Electronic Resource
    Mechanism and kinetics of polymerization of propylene in a microwave plasma (1981)
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. 233-245 
    Details
    ISSN: 1572-8986
    Keywords: Plasma ; kinetics ; polymerization ; propylene
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Flowing microwave plasma of propylene and propylene with argon was studied by mass spectrometry. Plasma composition was investigated as a function of external parameters such as pressure, argon/propylene ratio, and microwave-induced power. It was found that the propylene broke down to C2H2 and CH4, or reacted further with propylene. Two main products, leading to the determination of three main chain reactions for the polymerization of propylene by ion-molecule interactions, were observed, namely, C2H2 and CH4. These were the propylene, acetylene, and ethylene chain reactions. It was also found that the propylene disappeared in a pseudo-first-order reaction. Consequently an overall rate constant for the polymerization was determined (50 sec−1 at 1 torr pressure for propylene plasma). This constant is found to be linearly dependent upon the propylene percent concentration, and nonlinearly dependent upon plasma pressure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00568832
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  • 3
    Electronic Resource
    Electronic Resource
    Neutral and ion chemistry in a C2H4-SiH4 discharge (1982)
    Springer
    Plasma chemistry and plasma processing 2 (1982), S. 81-93 
    Details
    ISSN: 1572-8986
    Keywords: Plasma ; mass spectrometry ; electron impact dissociation ; radical reactions ; ion-molecule reactions
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract This paper reports on a mass spectrometric study of the neutral and ionic species in a low-pressure rf discharge sustained in a C2H4-SiH4 mixture diluted in helium. It is shown that C2H4 is readily decomposed into C2H 2 * and C2H3. The formation of secondary products such as C4H2, C4H4, and C4H6 is observed and confirms the presence of C2H2 in the discharge. Methylsilane (CH3SiH3) and ethylsilane (C2H5SiH3) are also synthesized in this discharge. It is also observed that the major ions C2H 4 + , C3H 5 + , SiH 3 + , Si2H 4 + , SiCH 3 + , SiC2H 3 + , and SiC2H 7 + are not representative of the direct ionization of neutral species. Their formation is thus interpreted on the basis of ion-molecule reactions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00566859
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  • 4
    Electronic Resource
    Electronic Resource
    Thermodynamic study of the ways of preparing silicon, and its application to the preparation of photovoltaic silicon by the plasma technique (1983)
    Springer
    Plasma chemistry and plasma processing 3 (1983), S. 393-420 
    Details
    ISSN: 1572-8986
    Keywords: Plasma ; silicon ; photovoltaic ; thermodynamic calculation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract After a comprehensive review of the bibliography on the production of solar grade silicon by various methods and starting from various raw materials, we develop the thermodynamic calculations of the reduction (with hydrogen or sodium) and of the pyrolysis of SiO2, SiCl4, SiF4, SiH4, and SiHCl3. For temperatures varying from 1000 to 6000 K at atmospheric pressure or at 10−2 atm, we present the corresponding composition diagrams together with the corresponding calculated reduction rates and conversion to silicon and the enthalpies required to heat the various mixtures considered up to 6000 K. As a conclusion we attempt to define, through our calculations, in connection with the prices of the raw materials and with the few experiments developed for the production of silicon under plasma conditions, the best raw materials for treatment by plasma to obtain silicon: SiH4 is probably best for obtaining high-purity silicon, and SiCl4 the cheapest.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00564627
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