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  • Artikel  (5)
  • Plasma etching  (5)
  • Springer  (5)
  • Cambridge University Press
  • Frontiers Media
  • National Academy of Sciences
  • 1980-1984  (5)
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  • Artikel  (5)
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  • Springer  (5)
  • Cambridge University Press
  • Frontiers Media
  • National Academy of Sciences
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  • 1
    Digitale Medien
    Digitale Medien
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. 37-52 
    ISSN: 1572-8986
    Schlagwort(e): Plasma etching ; formation of etchants ; polymers
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Technik allgemein
    Notizen: Abstract A model is presented that accounts for the formation of various etchants, unsaturated species, and polymers in halocarbon/oxidant plasma etching mixtures. It is discussed in terms of emission and mass spectral measurements of stable and unstable products in CF3Cl, CF3Br, C2F6, and related systems. In this reaction scheme, fluorocarbon precursors derived from the building block radical CF2 are saturated during reactions with atoms and reactive molecules. The most reactive species are preferentially removed by the saturation reactions. An ordering of this reactivity can be used to predict the dominant atomic etchants as a function of halocarbon and additive gas compositions.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Springer
    Plasma chemistry and plasma processing 1 (1981), S. 317-363 
    ISSN: 1572-8986
    Schlagwort(e): Plasma etching ; etchant gas mixtures ; etching parameters ; review
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Technik allgemein
    Notizen: Abstract Theory and practice of plasma etching are critically reviewed. Some unifying principles are extended to explain a large body of experimental data, encompassing more than 20 substrate materials in dozens of etchant gas mixtures. These basic concepts can be used to select new etchants and plasma etching parameters.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    Springer
    Plasma chemistry and plasma processing 4 (1984), S. 271-283 
    ISSN: 1572-8986
    Schlagwort(e): Plasma etching ; CF2 reactions ; F atom production ; CF4-O2 plasmas ; COF reactions
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Technik allgemein
    Notizen: Abstract Reactions between CF2 and O(3P) have been studied at 295 K in a gas flow reactor sampled by a mass spectrometer. The major reaction for CF2 has been found to be $$CF_2 + O \to COF + F$$ with $$CF_2 + O \to CO + 2F(F_2 )$$ more than a factor of three slower. The rate coefficient for all loss processes for CF2 on reaction with O is (1.8±0.4)×10−11 cm3 s−1. The COF produced in (18) undergoes a fast reaction with O to produce predominantly CO2. $$COF + O \to CO_2 + F$$ It is uncertain from the results whether or not $$COF + O \to CO + FO$$ occurs, but in any event (19) is the major route. The rate coefficient for the loss of COF in this system [i.e., the combined rate coefficients for (19) and (20)] is (9.3±2.1)×10−11 cm3 s−1. Stable product analysis reveals that for each CF2 radical consumed, the following distribution of stable products is obtained: COF2 (0.04±0.02), CO (0.21±0.04), and CO2 (0.75±0.05). Thus COF2, which we assume is produced via $$CF_2 + O \xrightarrow{M} COF_2$$ is a very minor product in this reaction sequence. The measured rate coefficients demonstrate that reactions (18) and (19) are important sources of F atoms in CF4/O2 plasmas.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    Springer
    Plasma chemistry and plasma processing 2 (1982), S. 1-41 
    ISSN: 1572-8986
    Schlagwort(e): Plasma etching ; mechanisms ; apparatus selection ; review
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Technik allgemein
    Notizen: Abstract The mechanistic and parametric complexity of a plasma etching environment often causes confusion and delays in the development of a suitable plasma etching process. This paper is an attempt to alleviate this problem by discussing some of the important physical and chemical phenomena and, where possible, relating these phenomena to apparatus selection and operation.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 5
    Digitale Medien
    Digitale Medien
    Springer
    Plasma chemistry and plasma processing 2 (1982), S. 141-155 
    ISSN: 1572-8986
    Schlagwort(e): Plasma etching ; plasma chemistry ; aluminum etching
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Technik allgemein
    Notizen: Abstract The chemistry occurring in glow discharges used to etch aluminum and aluminum alloy films is examined and is related to recurring problms such as initiation and reproducibility of etching, polymer or residue formation, photoresist degradation, aluminum corrosion, and safety aspects. The relative effects of different etch gases on these problems is discussed in light of aluminum surface chemistry and gas-phase plasma chemistry.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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