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  • Articles  (43)
  • 73.60  (23)
  • 81.10  (23)
  • 1985-1989  (43)
  • 1950-1954
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (43)
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  • Articles  (43)
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (43)
  • Physics  (44)
  • 1
    Electronic Resource
    Electronic Resource
    Ultrapure, high mobility organic photoconductors (1985)
    Springer
    Applied physics 36 (1985), S. 163-170 
    Details
    ISSN: 1432-0630
    Keywords: 72.80 L ; 72.20 H ; 81.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract This contribution demonstrates that high charge carrier mobility (〈400 cm2/Vs) is an inherent property ofultrapure organic molecular crystals at low temperatures. Small concentrations of traps, however, can completely obscure these microscopic transport properties on macroscopic scales. We describe extensive purification procedures with naphthalene and perylene, which led to the observation of high mobilities. At the same time we demonstrate that charge carrier transport measurements are a sensitive tool for the analytical characterization of high purity organic molecular crystals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00624938
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  • 2
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing and titanium silicide formation (1985)
    Springer
    Applied physics 38 (1985), S. 23-29 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 81.10 ; 73.40 Cg
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Titanium silcides have been formed on monocrystalline (111) silicon substrates by rapid thermal annealing (RTA) of Ti layers deposited on Si at 700–800 °C for 1 to 240 s. The phase composition is dependent on the annealing temperature and time: at 700° and 750 °C for short annealing, TiSi and TiSi2 are observed. At 800 °C and by increasing the exposure time at 700 ° and 750 °C, only TiSi2 is detected. The growth of the total silicide thickness is found to be faster for RTA than for conventional furnace annealing and governed by two different mechanisms depending on the phases formed: in the range 700–750 °C, and 750–800 °C, activation-energy values of 2.6 ± 0.2 and 1.5 ±0.2 eV are found, respectively. For a thin deposited Ti layer (〈 100 nm), the whole Ti is finally transformed into TiSi2 with 20@ μω cm resistivity. For thicker Ti thicknesses, titanium oxide stops the reaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618722
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  • 3
    Electronic Resource
    Electronic Resource
    Explosive crystallization processes in silicon (1986)
    Springer
    Applied physics 40 (1986), S. 29-36 
    Details
    ISSN: 1432-0630
    Keywords: 42.60 ; 64 ; 68.20 ; 81.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract This paper deals with selfsustaining crystallization processes, the so-called explosive crystallization, in silicon produced by short temperature pulses. By this, crystalline Si layers can be generated on amorphous substrates, e.g. on SiO2, at which liquid and solid-state crystallization processes can take place. Emphasis will be given to the liquid-phase explosive crystallization processes. Here, the transformation of amorphous into crystalline silicon occurs through two coupled laterally moving interfaces, amorphous-liquid and liquid-crystalline. Using an experimental equipment existing of 3 synchronized lasers supplying the temperature pulse for the ignition, the spreading out and stopping of the laterally moving interfaces, in connection with time-resolved measurements of the reflectivity by a laser test beam, information about the characteristic parameters as the velocity of the process, the crystallized area and the course of the crystallization front will be obtained. The crystalline structure was investigated by optical and transmission-electron micrography. The main results are: the crystallization fronts move radially from the ignition point with a velocity of about 15 m/s, crystalline laminae grow preferentially in 〈110〉 direction over a distance of more than 100 μm, areas of some millimeters in diameter can be crystallized and the quality of the crystallized layers essentially depends on the “amorphousness” of the virgin layer and the preparation method. The experimental results are in good agreement with theoretical predictions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616588
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  • 4
    Electronic Resource
    Electronic Resource
    Morphological stability in epitaxy of semiconductors — application to optoelectronic monolithically integrated structures (1986)
    Springer
    Applied physics 41 (1986), S. 243-252 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 81.10 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A simple selection rule for epitaxial growth techniques, which is based on morphological stability of the substrate surface is proposed. According to this rule a certain growth technique should be used for preparing a specific device structure of a three-dimensional monolithically integrated optical or electronic circuit. The formulae for morphological stability functions for LPE, MO, VPE, and MBE growth techniques are given. Calculations performed for the GaAs/Al x Ga1−x As material system by using the linear morphological stability theory of Mullins and Sekerka suggest that from the point of view of morphological stability the most suitable growth technique for fabrication of three-dimensional monolithically integrated optical and electronic device structures is the MBE technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616846
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  • 5
    Electronic Resource
    Electronic Resource
    The electrical properties of doped silicon, grown by Molecular-Beam-Epitaxy (MBE) (1987)
    Springer
    Applied physics 42 (1987), S. 197-200 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Measurements of the Hall coefficients and of the resistivity of MBE-grown Si, doped with P, As, Sb, B, and Ga in the concentration range 1014 to 1020 cm−3, were carried out at 77 K and at 300 K. With the exception of Ga-doped Si, the measured mobilities were close to or higher than those of bulk materials at both temperatures. The Mott metal/non-metal transition has been observed in the present epitaxial materials and the measured values for the critical impurity concentration at which the transition occurs, agree with values reported by other workers for bulk silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620599
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  • 6
    Electronic Resource
    Electronic Resource
    Electrical activation of low-fluence boron implantation in silicon studied by PCV in combination with SIMS (1988)
    Springer
    Applied physics 45 (1988), S. 77-81 
    Details
    ISSN: 1432-0630
    Keywords: 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The thermally induced electrical activation of boron implanted in silicon at fluences ≦1013 cm−2 was studied by the combination of secondary ion mass spectrometry (SIMS) and pulsed capacitance voltage (PCV). After annealing at 900°C for 30 min boron is completely ionized and the contribution of electrically active defects to the electrical profile is negligible. For partly annealed samples (T〈900°C) the degree of electrical activation of boron decreases with increasing boron concentration due to the presence of residual defects. The experimental data can be described qualitatively by the first-order kinetics if the influence of residual crystal defects on the electrical activation is considered.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618767
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  • 7
    Electronic Resource
    Electronic Resource
    Relationship between optical and structural properties of hydrogenated amorphous silicon (1989)
    Springer
    Applied physics 48 (1989), S. 295-304 
    Details
    ISSN: 1432-0630
    Keywords: 61.40 ; 73.60 ; 78.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A series of experimental studies has been made on the relationship between optical and structural properties of hydrogenated amorphous silicon (a-Si:H) prepared under various conditions. It has been clarified by analysing the results that the shape of the energy spectrum near the band edge and the distribution of the valence-band tail states depend primarily on the structural disorder of the Si network in a-Si:H. On the other hand, the total content and the bonding mode of bonded hydrogen have little effects on these electronic properties of a-Si:H. It has also been found that the distribution of the valenceband tail states might be related to other unidentified factor(s) besides the structural disorder. The present results have been compared with those of the previous experimental and theoretical studies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618889
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  • 8
    Electronic Resource
    Electronic Resource
    Theoretical analysis of trapping and recombination of photogenerated carriers in amorphous silicon solar cells (1985)
    Springer
    Applied physics 37 (1985), S. 153-164 
    Details
    ISSN: 1432-0630
    Keywords: 86.30 ; 72.40 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have made theoretical studies on the trapping and recombination of photogenerated carriers in hydrogenated amorphous silicon (a-Si∶H) p-i-n solar cells. We discuss in detail the following points: 1) The limitations of the assumptions in the previous analysis. It has been clarified that the single-level Shockley-Read-Hall model for carrier recombination and the treatment of trap occupation in terms of quasi-Fermi levels are inadequate for exact analysis. 2) The superlinear dependence of carrier recombination rate on the free-carrier density which can explain the enhancement of photo-induced changes ina-Si∶H under high intensity light. 3) The estimation of capture cross section of the tail states ina-Si∶H. We show that the charged and neutral tail states have rather small capture cross sections of less than 10−16 cm2 and of less than 10−19 cm2, respectively. 4) The effect of the recombination of photogenerated (PG) carriers at the p/i and the n/i interfaces. We estimate the recombination velocityS of PG carriers at these interfaces to be about 103 cm/s. It has been also clarified that the decrease inS is effective to improve the cell performance, especially the open circuit voltage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617500
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  • 9
    Electronic Resource
    Electronic Resource
    Amorphous to crystalline transition in Dy-Fe thin films (1986)
    Springer
    Applied physics 40 (1986), S. 241-245 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 81.10 ; 61.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The crystallization of vacuum-deposited amorphous Dy-Fe thin films was studied by transmission electron microscopy and electron diffraction. The effect of thickness, deposition rate and substrate temperature on the crystallization process have been investigated. The results show that the crystallization thicknessd c decreases with increasing deposition rate and substrate temperature. The number density of Dy-Fe islands were found to be almost constant at (4–5)×1011 cm−2 in the thickness range 20 Å〈d 〈50 Å. The number density decreases with increase ind c .
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616601
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  • 10
    Electronic Resource
    Electronic Resource
    Ion beam induced atomic mixing in Fe/Al bilayered samples (1986)
    Springer
    Applied physics 41 (1986), S. 127-135 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 72.15 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Atomic mixing of Fe/Al bilayered samples induced by an energetic xenon beam has been studied by RBS-TEM and sheet resistivity measurements. Mixing is detected at 2.5 × 1015 Xe/cm2 and then proceeds up to 2 × 1016 Xe/cm2. A blocking effect of the mixing for larger doses is observed. Homogeneous concentration is not obtained across the sample. Instead a pronounced graded composition is reached. Several explanations of the mixing process and the subsequent blocking effect are suggested: — sharp gradients in the nuclear energy deposition profile which decrease with dose — grain growth phenomena — precipitation of crystalline xenon acting as efficient annihilation sinks for vacancies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00631120
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  • 11
    Electronic Resource
    Electronic Resource
    Kinetics of Ni2Si growth from pure Ni and Ni(V) films on (111) and (100) Si (1987)
    Springer
    Applied physics 42 (1987), S. 35-39 
    Details
    ISSN: 1432-0630
    Keywords: 61.10 ; 68.55 ; 81.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The kinetics of Ni2Si growth from pure Ni and from Ni0.93V0.07 films on (111) and (100) silicon has been studied by the combination of He+ backscattering, x-ray diffraction, Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) techniques. The activation energies are 1.5 and 1.0 eV for pure Ni and Ni(V) films, respectively while the pre-exponential factors in Ni(V) are 4–5 orders of magnitude smaller than in the pure Ni case. The variations in the measured rates are related to the different grain size of the growing suicide layers. The vanadium is rejected from the silicide layer and piles up at the metalsilicide interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618156
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  • 12
    Electronic Resource
    Electronic Resource
    The effect of surface roughness on the resistivity increase of thin metal films during gas adsorption (1987)
    Springer
    Applied physics 42 (1987), S. 87-90 
    Details
    ISSN: 1432-0630
    Keywords: 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The resistivity increase of very thin metal films during gas adsorption is stronger than predicted by the commond −1 law. This effect is contributed to surface roughness. A quantitative theory is presented which leads to an additionald −3 term. The theory is checked using literature data obtained for the Ag/O2 system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618162
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  • 13
    Electronic Resource
    Electronic Resource
    The influence of graphite boat material on the purity of LPE InGaAs (1987)
    Springer
    Applied physics 43 (1987), S. 37-40 
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    ISSN: 1432-0630
    Keywords: 81.10 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract This paper describes the purity of LPE InGaAs layers grown in graphite boats, machined from various graphite materials. The influence of the material is clearly visible if the growth solution is sufficiently pure. Carrier concentrations n〈2×l015 cm−3 and mobilitiesμ(77 K)〉 38000 cm2/Vs are routinely achieved for suitable graphite materials already from the third run of a new “large” boat applying a prebake of only 15 h. “Small” boats yield even better results (n=0.5×1015 cm−3 andμ(77 K)=49500 m2/Vs). The sticking of In-rich solutions to the graphite does not depend on the material but is solely dependent on the surface roughness. The problem of graphite particle abrasion is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615203
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  • 14
    Electronic Resource
    Electronic Resource
    Conductivity fluctuations in planar resistors (1987)
    Springer
    Applied physics 43 (1987), S. 93-95 
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    ISSN: 1432-0630
    Keywords: 72.20 ; 73.60 ; 41
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Non-uniform planar resistors are modelled by a small stochastic conductivity pattern superimposed on the constant mean conductivity. At first a theoretical analysis is presented giving the mean square deviation of the resistor current for a given applied voltage. The same problem is then simulated by Monte-Carlo experiments and a good agreement is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617959
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  • 15
    Electronic Resource
    Electronic Resource
    Fundamental studies and device application of δ-doping in GaAs Layers and in AlxGa1−xAs/GaAs heterostructures (1988)
    Springer
    Applied physics 45 (1988), S. 233-244 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 68.65 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In addition to the realization of atomically abrupt interfaces in III–V semiconductors by molecular beam epitaxy, the confinement of donor and acceptor impurities to an atomic plane normal to the crystal growth direction, calledδ-doping, is important for the fabrication of artifically layered semiconductor structures. The implementation ofδ-function-like doping profiles by using Si donors and Be acceptors generates V-shaped potential wells in GaAs and AlxGa1−xAs with a quasi-two-dimensional (2D) electron (or hole) gas. In this review we define three areas of fundamental and device aspects associated withδ-doping. (i) The prototype structure ofδ-doping formed by a single atomic plane of Si donors in GaAs allows to study the 2D electron gas by magnetotransport and tunneling experiments, to study the metal-insulator transition, and to study central-cell and multivalley effects. In addition, non-alloyed ohmic contacts to GaAs and GaAs field-effect transistors (δ-FETs) with a buried 2D channel of high carrier density can be fabricated fromδ-doped material. (ii) GaAs sawtooth doping superlattices, consisting of a periodic sequence of alternating n- and p-typeδ-doping layers equally spaced by undoped regions, emit light of high intensity at wavelengths of 0.9 〈λ 〈1.2 [μm], which is attractive for application in photonic devices. The observed carrier transport normal to the layers due to tunneling indicates the feasibility of this superlattice as effective-mass filter. (iii) The confinement of donors (or acceptors) to an atomic (001) plane in selectively doped AlxGa1−xAs/GaAs heterostructures leads to very high mobilities, to high 2D carrier densities, and to a reduction of the undesired persistent photo-conductivity. Theseδ-doped heterostructures are thus important for application in transistors with improved current driving capabilities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615010
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  • 16
    Electronic Resource
    Electronic Resource
    Low-temperature fabrication of silicon nitride films by ArF excimer laser irradiation (1988)
    Springer
    Applied physics 46 (1988), S. 249-253 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60 ; 77.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The low-temperature fabrication of silicon nitride films by ArF excimer laser irradiation has been studied. Two fabrication methods are presented. One is photo-enhanced direct nitridation of a silicon surface with NH3 for very thin gate insulators, and the other is photo-enhanced deposition of silicon nitride films with Si2H6 and NH3 gases for stable passivation films. The ArF excimer laser irradiation dissociates the NH3 gas producing NH and NH2 radicals which proved effective in instigating the nitridation reaction. The quality of both films has been much improved and the growth temperature has been lowered by using laser irradiation. These photo-enhanced processes seem to be promising ULSI techniques because they do not depend on high temperatures and are free from possible reactor contamination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01141590
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  • 17
    Electronic Resource
    Electronic Resource
    Searching for optimum conditions in the laser writing of small ohmic contacts (1988)
    Springer
    Applied physics 46 (1988), S. 285-290 
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    ISSN: 1432-0630
    Keywords: 42.60 ; 81.10 ; 85.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Microscopic ohmic contacts are made by laser chemical vapor deposition of platinum on a Pyrex substrate. The electrical conductivity of the deposited metal stripes is measured as a function of the laser power, the writing speed, and the organometallic vapor pressure. The latter appears to be the key parameter for producing contacts with low resistance at high writing speeds. Even on these transparent substrates there is no apparent advantage in using light at 350 nm, where photolysis may in principle play a significant role, over using visible light where photolysis is not effective.
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    URL: http://dx.doi.org/10.1007/BF01141594
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  • 18
    Electronic Resource
    Electronic Resource
    Plasma assisted CVD of TiS2 (1989)
    Springer
    Applied physics 49 (1989), S. 105-109 
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    ISSN: 1432-0630
    Keywords: 81.10 ; 85.80 ; 72.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Fine powder and highly oriented thin film TiS2 were prepared by a reaction between TiCl4 and H2S in low-pressure glow discharge at low substrate temperatures (≦450°C). The products were investigated by changing the reaction conditions, e.g. the substrate temperature, the applied rf power between electrodes, and the reactant ratio ([H2S]/[TiCl4]). The fine powder product was an aggregate of plate-like crystallites of some ten nm in width and less than ten nm in thickness. Lithium batteries using the fine TiS2 powder showed a flat discharge voltage around 2.2 V up to 100% utilization. Submicron TiS2 crystallites had their lattice planes perpendicular to the substrate in the thin films having thicknesses greater than 1 μm. This orientation is expected to be favorable for the application to lithium rechargable batteries.
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    URL: http://dx.doi.org/10.1007/BF00615472
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  • 19
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    The effect of H-dilution on the transport properties of doped a-Si1−x Ge x : H alloys (1989)
    Springer
    Applied physics 49 (1989), S. 165-169 
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    ISSN: 1432-0630
    Keywords: 72.20 ; 72.40 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract This paper is concerned with the optimization of growth conditions for a-Si1-x Ge x :H alloys. It is shown that H-dilution of source gases selectively improves the band transport of electrons without significantly affecting the recombination center density or the band transport of holes. It is further shown that the beneficial effects of H-dilution are most pronounced in alloys with comparable densities of Si and Ge.
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    URL: http://dx.doi.org/10.1007/BF00616295
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  • 20
    Electronic Resource
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    Temperature effects in the photolytic LCVD of platinum (1989)
    Springer
    Applied physics 49 (1989), S. 189-197 
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    ISSN: 1432-0630
    Keywords: 42.60 ; 81.10 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The photolytic laser chemical vapor deposition (LCVD) rate of platinum from its bishexafluoroacetylacetonate precurser has been measured in situ and in real time. Optical transmission of the 350 nm photolysis light through the deposited platinum film and a transparent glass substrate is monitored and analysed in detail. From these measurements, as well as measurements of the reflected light, the fraction of the laser beam power absorbed in the metal film is found. The latter allows a simple estimate of the laser-induced temperature rise at the metal surface. It is shown that even rather small temperature increases of the order of several tens of degrees centigrade can completely change the photolysis mechanism and hence drastically influence the photolytic LCVD rate. A simple modification of Lax's model, in which a temperature dependent thermal conductivity of the substrate is introduced, is used to describe the laser-induced heating of a strongly absorbing thin metal film on a glass substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616298
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  • 21
    Electronic Resource
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    Laser-induced formation and surface processing of High-Temperature superconductors (1989)
    Springer
    Applied physics 48 (1989), S. 527-541 
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    ISSN: 1432-0630
    Keywords: 74.70 ; 42.60 ; 81.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The use of lasers in the formation and surface processing of high-temperature superconductors (HTS) is reviewed. Presently, thin film fabrication by reactive laser sputtering, and surface patterning by laser-induced reduction/metallization and ablation are the most promising applications. The great majority of the investigations have been performed for Y-Ba-Cu-O.
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    URL: http://dx.doi.org/10.1007/BF00617854
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  • 22
    Electronic Resource
    Electronic Resource
    CdS middlings prepared by the conically converging shock-wave technique (1989)
    Springer
    Applied physics 49 (1989), S. 157-163 
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    ISSN: 1432-0630
    Keywords: 62.50 ; 81.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract CdS multiplings having more than three prisms were developed from the vapor generated from CdS powder by means of the conically converging shock-wave (CCSW) technique utilizing detonation of explosive charge. These multilings are mainly made up of the wurtzite type prisms extending parallel to the 〈111〉 directions of the zinc-blende type octahedral crystallite at the center of the particle. Only a few multilings consist of prisms having the zinc-blende structure. Their morphology and structure are discussed.
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    URL: http://dx.doi.org/10.1007/BF00616294
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  • 23
    Electronic Resource
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    Photothermal effect contribution on film quality improvement in excimer-laser induced metal CVD (1985)
    Springer
    Applied physics 37 (1985), S. 25-30 
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    ISSN: 1432-0630
    Keywords: 81.10 ; 68.55 ; 68.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract KrF excimer laser induced Cr film deposition from Cr(CO)6 has been studied. Remarkable film quality dependence on laser intensity suggested the photothermal effect contribution of intensive uv laser pulses in the CVD process. A cw Ar-ion laser light and its second harmonic light were used, to separate photochemical and photothermal effects. As a result, photoinduced surface heating has been found to be very important for obtaining good quality metallic films in KrF laser induced Cr film CVD.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617865
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  • 24
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    Application of molecular (static) secondary ion mass spectroscopy to detection of organic molecules in amorphous titanium carbide (1987)
    Springer
    Applied physics 42 (1987), S. 139-143 
    Details
    ISSN: 1432-0630
    Keywords: 82.80 ; 82.65 ; 81.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Molecular, or static, secondary ion mass Spectroscopy (SIMS) is applied to the detection of organic molecules in amorphous titanium carbide films. The presence of such organic clusters is thought to stabilize the amorphous phase to higher temperatures (〉1000°C) and greater thicknesses. The high corrosion resistance properties of the TiC deposits are also attributed to the inclusion of such molecular entities. The processes whereby these molecular entities in the films are transformed into secondary ions during SIMS analysis are also investigated. It is shown that the dominant ionization mechanisms in this case are electron and momentum transfer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616724
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  • 25
    Electronic Resource
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    Electrical properties and degradation behavior of hydrogenated amorphous Si alloys for solar cells (1986)
    Springer
    Applied physics 41 (1986), S. 275-283 
    Details
    ISSN: 1432-0630
    Keywords: 85.30 ; 86.30 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electrical properties and the degradation behavior of hydrogenated amorphous silicon alloys (a-Si1−x A x : H, with A=C, Ge, B, P) in designs of pin, pip, nin, and MOS structures are investigated by measuring the dark and light I(V) characteristics and the spectral response as well as the space-charge-limited current (SCLC), the time of flight (TOF) of carriers and the field effect (FE). These investigations give an overview of our recent work combined with new results emphasizing the physics of the a-Si:H pin solar cells. We discuss the stabilizing influence on the degradation behavior achieved by profiling the i layers of the pin solar cells with P and B. Two kinds of pin solar cells, namely glass/SnO2/p(C)in/metal and glass/metal/pin/ITO, are investigated and an explanation of their different spectral response behavior is given. SCLC measurements lead to the conclusion that trapping is also involved in the degradation mechanism, as is recombination. TOF experiments on a-Si1−x Ge x : H pin diodes indicate that the incorporation of Ge widens the tail-state distribution below the conduction band. FE measurements showed densities of gap states of about 5×l016cm−3eV−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616049
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  • 26
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    Hydrogen sulphide doping of GaAs and AlxGa1−xAs grown by molecular beam epitaxy (MBE) (1985)
    Springer
    Applied physics 36 (1985), S. 147-151 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract H2S gas has been used during molecular beam epitaxy (MBE) growth of GaAs and Al x Ga1−x As as sulphur vector forn-type doping. Doping efficiencies are less than 10−3 at usual growth temperatures, and are limited by an incorporation competitive surface process, probably 2Ga+H2S→Ga2S+H2. In AlxGa1−x As forx≧0.2 the doping efficiency is further reduced by carrier freeze-out at deep levels. Measured thermal activation energies depend on growth conditions and remain relatively low even up to the direct-indirect bandgap crossover for substrate temperatures in the 585–645
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00624935
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  • 27
    Electronic Resource
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    Growth rates and electrical conductivity of microscopic ohmic contacts fabricated by laser chemical vapor deposition of platinum (1987)
    Springer
    Applied physics 44 (1987), S. 353-359 
    Details
    ISSN: 1432-0630
    Keywords: 81.10 ; 85.40 ; 42.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The laser chemical vapor deposition of platinum from its bishexafluoroacetylacetonate derivative is studied with a cw argon ion laser at 458 and 514 nm. The height, the width, as well as the electrical conductivity of the deposited stripes are reported as a function of the vapor pressure of the metalorganic precurser, the laser intensity, and the writing speed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00624603
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  • 28
    Electronic Resource
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    Single-wafer optical processing of semiconductors thin insulator growth for integrated electronic device applications (1988)
    Springer
    Applied physics 46 (1988), S. 255-273 
    Details
    ISSN: 1432-0630
    Keywords: 73.60 ; 77.50 ; 81.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract This paper presents an overview of the single-wafer optical processing techniques for integrated circuit fabrication with an emphasis on their applications to insulator growth. Rapid thermal growth of various thin homogeneous and heterogeneous dielectrics on silicon substrates including silicon dioxide, silicon nitride, nitrided oxides, and composition-tailored insulators will be described and some electronic device applications of the rapidly grown dielectrics will be examined. Multicycle rapid growth processes have been used for dielectric structural engineering and in-situ formation of thin layered insulators. The compositional depth profiles and the electrical characteristics of devices are controlled through the synthesis of an appropriate sequence of the wafer temperature-vs-time profiles and process gas cycles. The ongoing developments and future prospects of single-wafer rapid processing for advanced microelectronics manufacturing will also be discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01210345
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  • 29
    Electronic Resource
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    Diamond-like carbon films prepared by pulsed-laser evaporation (1988)
    Springer
    Applied physics 45 (1988), S. 355-360 
    Details
    ISSN: 1432-0630
    Keywords: 81.10 ; 68.55 ; 42.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Diamond-like carbon thin films were prepared by pulsed-laser evaporation. In this method a carbon target was irradiated by a XeCl laser with a power density of 3×108 W/cm2 and carbon atoms, together with a small number of ions, were produced. Deposition rates and film properties changed sensitively with substrate temperature. The films deposited at 50°C were diamond-like, having reasonable hardness, high refractive index (2.1–2.2 at 633 nm), optical transparency in the infrared, electrical resistivity of 108 Ω cm and chemical inertness (no dissolution in a HF∶HNO3 solution). The band gap measured from optical absorption was 1.4 eV. Raman spectrum and infrared absorption, whose features varied with the substrate temperature, were also measured. The films were amorphous and no crystallinity was observed, as confirmed by x-ray diffraction, transmission electron diffraction and Raman spectroscopy. Hydrogen atoms were incorporated in the films with a typical H/C ratio of 0.3. The application of a negative bias to the substrate modified the deposition due to the presence of ions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617942
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  • 30
    Electronic Resource
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    Gas phase versus surface contributions to photolytic laser chemical vapor deposition rates (1988)
    Springer
    Applied physics 45 (1988), S. 337-343 
    Details
    ISSN: 1432-0630
    Keywords: 42.60 ; 81.10 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The rate of cwphotolytic laser chemical vapor deposition (LCVD) of platinum is measured for λ≈350 nm as a function of the light intensity and the metalorganic vapor pressure. The growth of the metal films is studied in situ and in real time by monitoring their optical transmission. At low intensities the transmitted light decreases monotonically with time, and the LCVD process is photolytic with its rate limiting step in the surface adlayer. At higher intensities we observe two distinct time domains: Relatively slow initial photolytic deposition with its rate limiting step in the gas phase, which is followed by much faster pyrolytic LCVD. An improved method for distinguishing between adlayer and gas-phase limiting processes is demonstrated. These observations are confirmed by studying the photolytic deposition rates while varying the thickness of the adlayer.
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    URL: http://dx.doi.org/10.1007/BF00617940
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  • 31
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    Temperature dependence of photodegradation in amorphous hydrogenated silicon (1988)
    Springer
    Applied physics 46 (1988), S. 5-8 
    Details
    ISSN: 1432-0630
    Keywords: 73.60 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Measurements of steady-state photoconductivity with respect to light-induced defect generation in amorphous hydrogenated silicon (a-Si: H) show that the power index of the time evolution (long-term observation) of the photodegradation is determined by the exposure temperature and the material.
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    URL: http://dx.doi.org/10.1007/BF00615129
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  • 32
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    Spatial distribution of impurities in delta-doped n-type GaAs (1988)
    Springer
    Applied physics 47 (1988), S. 123-129 
    Details
    ISSN: 1432-0630
    Keywords: 81.10 ; 73.60 ; 75.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Capacitance-voltage (CV) profiling measurements on delta-doped n-type GaAs reveal extremely narrow peaks with a full-width at half-maximum of 40 Å. Comparison of experimental with self-consistently calculated CV profiles demonstrates that Si impurities are localized on a length scale of a lattice constant in delta-doped GaAs. Diffusion and segregation are of minor importance. The basic theory of CV measurements on quantummechanical systems such as delta-doped semiconductors is developed and presented.
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    URL: http://dx.doi.org/10.1007/BF00618876
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  • 33
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    Ground state magnetic properties of ultrathin fcc Fe and Co films on Cu(001) surfaces (1988)
    Springer
    Applied physics 47 (1988), S. 73-76 
    Details
    ISSN: 1432-0630
    Keywords: 73.60 ; 75.60 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have grown by means of Molecular Beam Epitaxy ultrathin (1 to ∼ 10 ML) films of fcc Fe and Co on a Cu(001) surface, thus stabilizing this high temperature phase of bulk Fe and Co at room temperature. All films, including the single monolayers, are ferromagnetic. The Co films are magnetized in plane, independently on the thickness. Fe films thicker than 2 ML are magnetized along the film normal. Up to now, the statistical uncertainty is still too large to conclusively prove an enhancement of the magnetic moment for the thinnest Co films.
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    URL: http://dx.doi.org/10.1007/BF00619700
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  • 34
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    Amorphous hydrogenated carbon films on semiconductors (1989)
    Springer
    Applied physics 48 (1989), S. 549-558 
    Details
    ISSN: 1432-0630
    Keywords: 79.60 ; 73.40 ; 73.60 ; 73.60H ; 71.25M ; 81.15 ; 46.30P
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The interface properties of hydrogenated amorphous carbon films (a-C:H) on Si and GaAs substrates have been studied by in-situ photoelectron spectroscopy measurements. The a-C:H films have been deposited by direct ion beam deposition. Distinct differences in the interface formation have been observed during film depositon on the two substrates. The data clearly reveal a decomposition of the GaAs at the interface which can be related to the reduced adhesion of a-C: H on the compound semiconductor substrate.
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    URL: http://dx.doi.org/10.1007/BF00617856
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  • 35
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    In situ preparation of Bi-Sr-Ca-Cu-O superconducting films by laser sputtering (1989)
    Springer
    Applied physics 49 (1989), S. 221-223 
    Details
    ISSN: 1432-0630
    Keywords: 74.70 ; 42.60 ; 81.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Superconducting films of Bi-Sr-Ca-Cu-O on (100) MgO substrates have been fabricated by XeCl-excimer-laser sputtering from ceramic targets of Bi2.5Sr2Ca2Cu3Oy in O2 atmosphere. The films were polycrystalline with the c-axis (30.80±0.02Å) preferably oriented normal to the substrate surface. Without post-annealing the films showed metallic resistance behavior with zero resistance temperatures of up to Tc(0) }- 79 K. The critical current density of the films had values of up to jc(50K)}- 104 A/cm2.
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    URL: http://dx.doi.org/10.1007/BF00616303
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  • 36
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    Transition metal impurities in silicon: New defect reactions (1989)
    Springer
    Applied physics 49 (1989), S. 431-436 
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    ISSN: 1432-0630
    Keywords: 71.55 ; 66.30 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Recent investigations on transition-metal impurities in silicon emphasizing the effect of the combined diffusion of two transition metals are presented and briefly discussed. The electronic properties and basic thermal kinetics are analysed by DLTS. The conversion of a Pd-related multivalent defect atE c-0.35 eV andE c-0.57 eV to the Pd-related defect atE c −0.22 eV is observed, and a Pd-Fe complex level atE c −0.32 eV is identified. The annealing characteristics of the multivalent Rh levels atE c-0.33 eV andE c-0.57 eV are observed, and used to analyse the influence of prior Rh doping on the Au diffusion. A complex formed by the codiffusion of Au and Cu is observed atE v+0.32eV andE v+0.42 eV, and shown to exhibit bistable behavior as does a similarly produced Au-Ni complex observed atE v + 0.35 eV andE v+0.48 eV.
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    URL: http://dx.doi.org/10.1007/BF00615028
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  • 37
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    Optical, structural, electrical and optoelectronic properties of hydrogenated amorphous Si1−x C x alloy thin films prepared by planar magnetron sputtering method (1985)
    Springer
    Applied physics 38 (1985), S. 37-43 
    Details
    ISSN: 1432-0630
    Keywords: 73.60 ; 72.40 ; 78.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Amorphous Si1−xCx: H thin films were prepared by the rf magnetron sputtering method using a composite target of silicon and graphite. The dependence of the optical, structural, electrical, and optoelectronic properties on the carbon contentx was investigated, by measuring the optical absorption spectra, ir spectra, dark conductivity, photoconductivity and ESCA spectra. The optical gap was found to be unchanged with increasingx below about 0.6, in spite of the increase in the amount of the SiC bond. This is considered to be due to the formation of the carbon clusters. It is found that the photosensitivity shows a maximum at aboutx = 0.2, and is about one order of magnitude larger than the film withx = 0. This is related to the decrease in the dark conductivity, which is ascribed both to the formation of the SiC bond and to the reorganization of the defect-rich structure of sputter-deposited amorphous Si by the addition of about 20% carbon. The photoconductive effect was gradually lost in the range ofx above 0.6. In this range, the optical gap increases rapidly owing to the rapid increase of the SiC bond.
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    URL: http://dx.doi.org/10.1007/BF00618724
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  • 38
    Electronic Resource
    Electronic Resource
    Epitaxial nickel and cobalt suicide formation by rapid thermal annealing (1986)
    Springer
    Applied physics 39 (1986), S. 141-145 
    Details
    ISSN: 1432-0630
    Keywords: 81.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin films of epitaxial NiSi2 and CoSi2 were formed by short-duration incoherent light exposure of evaporated Ni or Co films on 〈111〉 Si single crystals. The crystalline quality of these suicides is comparable to what has been obtained for long-duration furnace annealed suicides, as deduced from channeling measurements. NiSi2 is of high crystalline quality at all temperatures at which it is formed whereas the CoSi2 films recrystallize at a temperature of ∼980°C.
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    URL: http://dx.doi.org/10.1007/BF00616832
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  • 39
    Electronic Resource
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    Validity of quasi-static capacitance-voltage measurements applied to hydrogenated amorphous silicon diodes (1986)
    Springer
    Applied physics 40 (1986), S. 171-176 
    Details
    ISSN: 1432-0630
    Keywords: 73.60 ; 71.20 ; 86.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have reexamined the validity of quasi-static capacitance-voltage (C-V) measurements when applied to hydrogenated amorphous silicon (a-Si: H) diodes. Displacement currents with the application of a linear ramp voltage to an a-Si:H Schottky diode exhibit a slow response with time constants ranging 0.1–1 s which cannot be measured completely by the conventional measurements. The measured capacitance and the effective density of gap states obtained from the measurement depend on the timing of current observation even when the small value of the order of 0.01 V/s is chosen for the ramp rate. We propose a possible means to realize the true quasi-staticC-V measurement of a-Si:H diodes.
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    URL: http://dx.doi.org/10.1007/BF00617400
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  • 40
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    Low-temperature fabrication of silicon nitride films by ArF excimer laser irradiation (1988)
    Springer
    Applied physics 46 (1988), S. 249-253 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60 ; 77.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The low-temperature fabrication of silicon nitride films by ArF excimer laser irradiation has been studied. Two fabrication methods are presented. One is photoenhanced direct nitridation of a silicon surface with NH3 for very thin gate insulators, and the other is photo-enhanced deposition of silicon nitride films with Si2H6 and NH3 gases for stable passivation films. The ArF excimer laser irradiation dissociates the NH3 gas producing NH and NH2 radicals which proved effective in instigating the nitridation reaction. The quality of both films has been much improved and the growth temperature has been lowered by using laser irradiation. These photo-enhanced processes seem to be promising ULSI techniques because they do not depend on high temperatures and are free from possible reactor contamination.
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    URL: http://dx.doi.org/10.1007/BF01210344
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  • 41
    Electronic Resource
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    Searching for optimum conditions in the laser writing of small ohmic contacts (1988)
    Springer
    Applied physics 46 (1988), S. 285-290 
    Details
    ISSN: 1432-0630
    Keywords: 42.60 ; 81.10 ; 85.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Microscopic ohmic contacts are made by laser chemical vapor deposition of platinum on a Pyrex substrate. The electrical conductivity of the deposited metal stripes is measured as a function of the laser power, the writing speed, and the organometallic vapor pressure. The latter appears to be the key parameter for producing contacts with low resistance at high writing speeds. Even on these transparent substrates there is no apparent advantage in using light at 350 nm, where photolysis may in principle play a significant role, over using visible light where photolysis is not effective.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01210348
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  • 42
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    Electronic Resource
    Single-wafer optical processing of semiconductors: Thin insulator growth for integrated electronic device applications (1988)
    Springer
    Applied physics 46 (1988), S. 255-273 
    Details
    ISSN: 1432-0630
    Keywords: 73.60 ; 77.50 ; 81.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract This paper presents an overview of the single-wafer optical processing techniques for integrated circuit fabrication with an emphasis on their applications to insulator growth. Rapid thermal growth of various thin homogeneous and heterogeneous dielectrics on silicon substrates including silicon dioxide, silicon nitride, nitrided oxides, and composition-tailored insulators will be described and some electronic device applications of the rapidly grown dielectrics will be examined. Multicycle rapid growth processes have been used for dielectric structural engineering and in-situ formation of thin layered insulators. The compositional depth profiles and the electrical characteristics of devices are controlled through the synthesis of an appropriate sequence of the wafer temperature-vs-time profiles and process gas cycles. The ongoing developments and future prospects of single-wafer rapid processing for advanced microelectronics manufacturing will also be discussed.
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    URL: http://dx.doi.org/10.1007/BF01141591
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  • 43
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    Electrical conduction in Cu/Mn multilayer films (1989)
    Springer
    Applied physics 49 (1989), S. 273-277 
    Details
    ISSN: 1432-0630
    Keywords: 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Metallic superlattices of copper and manganese have been synthesized on glass and mica substrates by a sequential evaporation technique. The electrical resistivity and the temperature coefficient of resistance (TCR) of layered Cu/Mn has been studied for various thicknesses (d) in the range 2–6 nm by varying the number of double layers (n) from 5–35. The transition from a negative to positive TCR has been observed ford 〉5 nm. The thickness dependence of room temperature resistivity (ϱ RT) and TCR shows oscillatory behaviour.
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    URL: http://dx.doi.org/10.1007/BF00616854
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