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  • Articles  (41)
  • 73.60  (41)
  • 1985-1989  (23)
  • 1980-1984  (18)
  • 1950-1954
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (41)
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  • Articles  (41)
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (41)
  • Physics  (41)
  • 1
    Electronic Resource
    Electronic Resource
    A study of built-in potential ina-Si solar cells by means of back-surface reflected electroabsorption (1983)
    Springer
    Applied physics 32 (1983), S. 31-38 
    Details
    ISSN: 1432-0630
    Keywords: 86.30 ; 72.40 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electroreflectance (ER) signal has been studied for the purpose of identifying the built-in field in practical amorphous silicon (a-Si∶H) solar cells. Through both theoretical and experimental considerations, it has been confirmed that the ER signal essentially comes from the light which is reflected at the back surface and hence experiences the internal electric field within thea-Si∶H layer. By analyzing the ER signal, which is really the back-surface reflected electroabsorption signal, the built-in potentialV bcan be evaluated. This method has been applied to various types ofp-i-n junctiona-Si solar cells.V bof a usual homojunction solar cell was about 0.85 V. Increases ofV bby 50≈130mV have been found in heterojunction solar cells constructed withp-type amorphous silicon carbide (a-SiC∶H) and/orn-type microcrystalline silicon (μc-Si) as compared with homojunctionp-i-n solar cells. Moreover, a clear dependence ofV bon the substrate materials has been observed. These experimental results are described in connection with cell performances.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00626131
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  • 2
    Electronic Resource
    Electronic Resource
    Kinetic limitations to surface segregation during MBE growth of III–V compounds: Sn in GaAs (1984)
    Springer
    Applied physics 33 (1984), S. 87-92 
    Details
    ISSN: 1432-0630
    Keywords: 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The incorporation of Sn as a dopant in GaAs has been studied in the temperature range of 500°–650° C, over a wide range of Ga and As fluxes, the latter being incident as either As4 or As2 molecules. The results are explained in terms of a surface segregation model in which the behaviour at high growth temperatures (above ∼600 °C) approaches thermal equilibrium, but growth at lower temperatures involves a kinetic limitation to the segregation process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617613
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  • 3
    Electronic Resource
    Electronic Resource
    Ion-beam mixing kinetics of Fe-Al multilayers studied by in situ electrical resistivity measurements (1984)
    Springer
    Applied physics 33 (1984), S. 77-82 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 72.15 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The ion-beam mixing of Fe-Al evaporated multiple-layer films has been investigated by measuring continuously the electrical resistivity of the samples during the bombardment. The experimental curves exhibit a tendency toward a saturation process and allow the determination of the critical dose corresponding to the total mixing of the multiple-layer film. The variations of the volume fraction of intermixed atoms as a function of the ion dose have been deduced and a semi-empirical model is proposed to explain the observed kinetics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617611
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  • 4
    Electronic Resource
    Electronic Resource
    Formation of a metallic layer from individual atoms (1984)
    Springer
    Applied physics 33 (1984), S. 213-225 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Adsorption of copper, gold and beryllium on (110), (100), and (211) single-crystal planes of tungsten leads to essentially different work-function changes. It is known from numerous investigations of alkali-metal adsorption on metal substrates that the work-function variation reflects the electronic processes occurring during the formation of the adlayer. It is obvious that copper, gold and beryllium adsorption is accompanied by a wide variety of physical processes different from those appearing in alkali-metal adsorption. The existing experimental data concerning work-function changes induced by copper, gold and beryllium adsorption are compiled. A model is developed, which may explain these changes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614661
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  • 5
    Electronic Resource
    Electronic Resource
    On the annealing behaviour of the Staebler-Wronski effect ina-Si:H (1984)
    Springer
    Applied physics 35 (1984), S. 9-12 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The kinetics of the Staebler-Wronski effect ina-Si:H were investigated experimentally. The rate of recovery from the illuminated state B to the annealed state A was observed at various temperatures in undoped,n- andp-dopeda-Si:H. The data can be characterized by a thermally activated relaxation time with an activation energy decreasing with increasing doping concentration. The results are compared with previous data and existing models.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620293
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  • 6
    Electronic Resource
    Electronic Resource
    The electrical properties of doped silicon, grown by Molecular-Beam-Epitaxy (MBE) (1987)
    Springer
    Applied physics 42 (1987), S. 197-200 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Measurements of the Hall coefficients and of the resistivity of MBE-grown Si, doped with P, As, Sb, B, and Ga in the concentration range 1014 to 1020 cm−3, were carried out at 77 K and at 300 K. With the exception of Ga-doped Si, the measured mobilities were close to or higher than those of bulk materials at both temperatures. The Mott metal/non-metal transition has been observed in the present epitaxial materials and the measured values for the critical impurity concentration at which the transition occurs, agree with values reported by other workers for bulk silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620599
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  • 7
    Electronic Resource
    Electronic Resource
    Electrical activation of low-fluence boron implantation in silicon studied by PCV in combination with SIMS (1988)
    Springer
    Applied physics 45 (1988), S. 77-81 
    Details
    ISSN: 1432-0630
    Keywords: 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The thermally induced electrical activation of boron implanted in silicon at fluences ≦1013 cm−2 was studied by the combination of secondary ion mass spectrometry (SIMS) and pulsed capacitance voltage (PCV). After annealing at 900°C for 30 min boron is completely ionized and the contribution of electrically active defects to the electrical profile is negligible. For partly annealed samples (T〈900°C) the degree of electrical activation of boron decreases with increasing boron concentration due to the presence of residual defects. The experimental data can be described qualitatively by the first-order kinetics if the influence of residual crystal defects on the electrical activation is considered.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618767
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  • 8
    Electronic Resource
    Electronic Resource
    Relationship between optical and structural properties of hydrogenated amorphous silicon (1989)
    Springer
    Applied physics 48 (1989), S. 295-304 
    Details
    ISSN: 1432-0630
    Keywords: 61.40 ; 73.60 ; 78.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A series of experimental studies has been made on the relationship between optical and structural properties of hydrogenated amorphous silicon (a-Si:H) prepared under various conditions. It has been clarified by analysing the results that the shape of the energy spectrum near the band edge and the distribution of the valence-band tail states depend primarily on the structural disorder of the Si network in a-Si:H. On the other hand, the total content and the bonding mode of bonded hydrogen have little effects on these electronic properties of a-Si:H. It has also been found that the distribution of the valenceband tail states might be related to other unidentified factor(s) besides the structural disorder. The present results have been compared with those of the previous experimental and theoretical studies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618889
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  • 9
    Electronic Resource
    Electronic Resource
    Electron mobility in compensated VPE GaAs films (1980)
    Springer
    Applied physics 23 (1980), S. 37-40 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 73.60 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Electron Hall mobilities were measured on a series of intentionally compensated vapor phase epitaxy (VPE) GaAs layers. Using Sn and Zn as dopants, compensation ratiosK=(ND+NA)/(ND-NA) as high as 50 were obtained. Already for samples with the lowestK values the 300 K mobilities are higher than the 77 K values. In the range 20〈T〈100 [K] the data may be represented by μ∼T α with α increasing from 0.6 to 1.1 with compensation. The experimental μ values are smaller than those predicted from current models in all cases. It appears that scattering at ionized impurities is the dominant process also at temperatures well above 77 K, and that this scattering process is quantitatively underestimated in current models.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00899568
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  • 10
    Electronic Resource
    Electronic Resource
    Far-infrared donor spectroscopy of MBE-GaAs (1984)
    Springer
    Applied physics 33 (1984), S. 83-85 
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    ISSN: 1432-0630
    Keywords: 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Magneto-optical spectra of shallow donors in MBE-GaAs were measured in the far-infrared using Fourier transform spectroscopy. In the purest sample (N I=9×1014cm−3) silicon was observed to be the dominating donor impurity. In a less pure sample sulfur was observed to dominate. The increase of the purity and the elimination of the sulfur contamination was correlated with the change from water cooling to liquid nitrogen cooling of the cooling shrouds around the effusion cells. An increase of the growth temperature was probably also one reason for the increase of the purity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617612
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  • 11
    Electronic Resource
    Electronic Resource
    Attenuation length of monoenergetic electrons photoinjected into the NaCl layer (1984)
    Springer
    Applied physics 34 (1984), S. 67-68 
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    ISSN: 1432-0630
    Keywords: 79.40 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A new, precise photoelectric method of electron attenuation length measurement in alkali halides is proposed and experimentally verified. The obtained results confirm the Llacer-Garwin theory of electron-phonon interactions in these substances.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617576
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  • 12
    Electronic Resource
    Electronic Resource
    Dependence of properties of hydrogenated microcrystalline and amorphous silicon films prepared by planar magnetron sputtering in inert gas (1984)
    Springer
    Applied physics 35 (1984), S. 241-247 
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    ISSN: 1432-0630
    Keywords: 72.40 ; 73.60 ; 78.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Microcrystalline and amorphous hydrogenated silicon films were preparaed by rf planar magnetron sputtering in the four kinds of inert gas, i.e., He, Ne, Ar, and Kr. The dependence of such properties as x-ray diffraction, ir spectra, absorption coefficient, hydrogen content, dark conductivity and photoconductivity on the kind of inert gas was investigated. Such deposition conditions as hydrogen partial pressure, sputtering pressure and rf power were also studied mainly in relation to the microcrystallization of the films. Microcrystalline films with noticeably high deposition rate could be obtained in the case of Kr and Ar, compared to the case of He and Ne. Hydrogen concentration was found to correlate to the photoconductivity and activation energy of dark conductivity except for the case of He. Photosensitivity was appreciably larger for amorphous film than for microcrystalline one. Especially in the case of Kr, it was considerably larger than in other cases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617174
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  • 13
    Electronic Resource
    Electronic Resource
    Theoretical analysis of trapping and recombination of photogenerated carriers in amorphous silicon solar cells (1985)
    Springer
    Applied physics 37 (1985), S. 153-164 
    Details
    ISSN: 1432-0630
    Keywords: 86.30 ; 72.40 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have made theoretical studies on the trapping and recombination of photogenerated carriers in hydrogenated amorphous silicon (a-Si∶H) p-i-n solar cells. We discuss in detail the following points: 1) The limitations of the assumptions in the previous analysis. It has been clarified that the single-level Shockley-Read-Hall model for carrier recombination and the treatment of trap occupation in terms of quasi-Fermi levels are inadequate for exact analysis. 2) The superlinear dependence of carrier recombination rate on the free-carrier density which can explain the enhancement of photo-induced changes ina-Si∶H under high intensity light. 3) The estimation of capture cross section of the tail states ina-Si∶H. We show that the charged and neutral tail states have rather small capture cross sections of less than 10−16 cm2 and of less than 10−19 cm2, respectively. 4) The effect of the recombination of photogenerated (PG) carriers at the p/i and the n/i interfaces. We estimate the recombination velocityS of PG carriers at these interfaces to be about 103 cm/s. It has been also clarified that the decrease inS is effective to improve the cell performance, especially the open circuit voltage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617500
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  • 14
    Electronic Resource
    Electronic Resource
    Ion beam induced atomic mixing in Fe/Al bilayered samples (1986)
    Springer
    Applied physics 41 (1986), S. 127-135 
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    ISSN: 1432-0630
    Keywords: 61.80 ; 72.15 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Atomic mixing of Fe/Al bilayered samples induced by an energetic xenon beam has been studied by RBS-TEM and sheet resistivity measurements. Mixing is detected at 2.5 × 1015 Xe/cm2 and then proceeds up to 2 × 1016 Xe/cm2. A blocking effect of the mixing for larger doses is observed. Homogeneous concentration is not obtained across the sample. Instead a pronounced graded composition is reached. Several explanations of the mixing process and the subsequent blocking effect are suggested: — sharp gradients in the nuclear energy deposition profile which decrease with dose — grain growth phenomena — precipitation of crystalline xenon acting as efficient annihilation sinks for vacancies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00631120
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  • 15
    Electronic Resource
    Electronic Resource
    Controlled doping of rf sputtered germanium films (1984)
    Springer
    Applied physics 34 (1984), S. 117-121 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Germanium films have been rf sputter deposited on a variety of substrates. A new techniques has been developed to control doping concentrations of the films at predetermined levels for bothp-type as well asn-type films. The hole concentrations of these films could be varied from 1015 to 2×1018/cm3 while the electron concentrations could be varied from 1015 to 5×1017/cm3 using this technique. Transmission electron microscope studies have been made to study the crystalline quality of the films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614763
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  • 16
    Electronic Resource
    Electronic Resource
    The effect of surface roughness on the resistivity increase of thin metal films during gas adsorption (1987)
    Springer
    Applied physics 42 (1987), S. 87-90 
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    ISSN: 1432-0630
    Keywords: 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The resistivity increase of very thin metal films during gas adsorption is stronger than predicted by the commond −1 law. This effect is contributed to surface roughness. A quantitative theory is presented which leads to an additionald −3 term. The theory is checked using literature data obtained for the Ag/O2 system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618162
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  • 17
    Electronic Resource
    Electronic Resource
    Conductivity fluctuations in planar resistors (1987)
    Springer
    Applied physics 43 (1987), S. 93-95 
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    ISSN: 1432-0630
    Keywords: 72.20 ; 73.60 ; 41
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Non-uniform planar resistors are modelled by a small stochastic conductivity pattern superimposed on the constant mean conductivity. At first a theoretical analysis is presented giving the mean square deviation of the resistor current for a given applied voltage. The same problem is then simulated by Monte-Carlo experiments and a good agreement is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617959
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  • 18
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    Fundamental studies and device application of δ-doping in GaAs Layers and in AlxGa1−xAs/GaAs heterostructures (1988)
    Springer
    Applied physics 45 (1988), S. 233-244 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 68.65 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In addition to the realization of atomically abrupt interfaces in III–V semiconductors by molecular beam epitaxy, the confinement of donor and acceptor impurities to an atomic plane normal to the crystal growth direction, calledδ-doping, is important for the fabrication of artifically layered semiconductor structures. The implementation ofδ-function-like doping profiles by using Si donors and Be acceptors generates V-shaped potential wells in GaAs and AlxGa1−xAs with a quasi-two-dimensional (2D) electron (or hole) gas. In this review we define three areas of fundamental and device aspects associated withδ-doping. (i) The prototype structure ofδ-doping formed by a single atomic plane of Si donors in GaAs allows to study the 2D electron gas by magnetotransport and tunneling experiments, to study the metal-insulator transition, and to study central-cell and multivalley effects. In addition, non-alloyed ohmic contacts to GaAs and GaAs field-effect transistors (δ-FETs) with a buried 2D channel of high carrier density can be fabricated fromδ-doped material. (ii) GaAs sawtooth doping superlattices, consisting of a periodic sequence of alternating n- and p-typeδ-doping layers equally spaced by undoped regions, emit light of high intensity at wavelengths of 0.9 〈λ 〈1.2 [μm], which is attractive for application in photonic devices. The observed carrier transport normal to the layers due to tunneling indicates the feasibility of this superlattice as effective-mass filter. (iii) The confinement of donors (or acceptors) to an atomic (001) plane in selectively doped AlxGa1−xAs/GaAs heterostructures leads to very high mobilities, to high 2D carrier densities, and to a reduction of the undesired persistent photo-conductivity. Theseδ-doped heterostructures are thus important for application in transistors with improved current driving capabilities.
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    URL: http://dx.doi.org/10.1007/BF00615010
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  • 19
    Electronic Resource
    Electronic Resource
    Low-temperature fabrication of silicon nitride films by ArF excimer laser irradiation (1988)
    Springer
    Applied physics 46 (1988), S. 249-253 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60 ; 77.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The low-temperature fabrication of silicon nitride films by ArF excimer laser irradiation has been studied. Two fabrication methods are presented. One is photo-enhanced direct nitridation of a silicon surface with NH3 for very thin gate insulators, and the other is photo-enhanced deposition of silicon nitride films with Si2H6 and NH3 gases for stable passivation films. The ArF excimer laser irradiation dissociates the NH3 gas producing NH and NH2 radicals which proved effective in instigating the nitridation reaction. The quality of both films has been much improved and the growth temperature has been lowered by using laser irradiation. These photo-enhanced processes seem to be promising ULSI techniques because they do not depend on high temperatures and are free from possible reactor contamination.
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    URL: http://dx.doi.org/10.1007/BF01141590
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  • 20
    Electronic Resource
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    Nucleation effects during MBE growth of Sn-Doped GaAs (1982)
    Springer
    Applied physics 28 (1982), S. 63-71 
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    ISSN: 1432-0630
    Keywords: 73.60
    Source: Springer Online Journal Archives 1860-2000
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    Notes: Abstract The morphology, structure and composition of Sn films on GaAs substrates have been investigated in relation to the predeposition technique used with Sn doping of MBE-grown GaAs films. It has been shown that 3-D aggregates of Sn are formed and a similar morphology has been identified in the Sn which accumulates at the surface of all Sn-doped GaAs films. The way in which this relates to donor incorporation is considered and a simple model of incorporation kinetics proposed which is shown to be consistent with observation.
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    URL: http://dx.doi.org/10.1007/BF00617784
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  • 21
    Electronic Resource
    Electronic Resource
    Al reaction with SiO2 an auger electron spectroscopy and energy loss spectroscopy study (1982)
    Springer
    Applied physics 28 (1982), S. 247-250 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60 ; 79.20 ; 82.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Evidence for a reaction between aluminium and SiO2 film is presented using Auger electron spectroscopy (AES) and low-energy electron-loss spectroscopy (ELS) techniques. This reaction is studied “in situ” during the manufacture of metal insulator semiconductor devices (MIS), under ultra-high vacuum conditions (UHV). A reduction of the SiO2 film upon aluminization occurs, even at room temperature, giving rise to a complex interface.
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    URL: http://dx.doi.org/10.1007/BF00618702
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  • 22
    Electronic Resource
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    The effect of H-dilution on the transport properties of doped a-Si1−x Ge x : H alloys (1989)
    Springer
    Applied physics 49 (1989), S. 165-169 
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    ISSN: 1432-0630
    Keywords: 72.20 ; 72.40 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract This paper is concerned with the optimization of growth conditions for a-Si1-x Ge x :H alloys. It is shown that H-dilution of source gases selectively improves the band transport of electrons without significantly affecting the recombination center density or the band transport of holes. It is further shown that the beneficial effects of H-dilution are most pronounced in alloys with comparable densities of Si and Ge.
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    URL: http://dx.doi.org/10.1007/BF00616295
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  • 23
    Electronic Resource
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    Effect of size quantization on the Einstein relation in ultrathin films of non-parabolic semiconductors (1981)
    Springer
    Applied physics 26 (1981), S. 165-169 
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    ISSN: 1432-0630
    Keywords: 73.60 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An attempt is made to investigate the effect of size quantization on the diffusivity-mobility ratio of the carriers in ultrathin films of semiconductors having Kane-type nonparabolic energy bands. It is shown, takingn-type InSb as an example, that the ratio oscillates both with increasing film thickness and with increasing carrier concentration under degenerate conditions and remains unaffected otherwise. The corresponding results for parabolic semiconductors are also obtained from the expressions derived.
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    URL: http://dx.doi.org/10.1007/BF00614751
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  • 24
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    Silicon doping of MBE-grown GaAs films (1983)
    Springer
    Applied physics 32 (1983), S. 195-200 
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    ISSN: 1432-0630
    Keywords: 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Two concentration ranges of silicon doping in MBE-grown GaAs films have been investigated in some detail. In lightly doped films, with a free-electron concentration of ≈1016cm−3, low-temperature photoluminescence spectra have been analysed to develop a model to account for spectral features previously attributed to Ge and Si acceptor levels. In heavily doped films, a maximum free-electron concentration of ≈7×1018 cm−3 has been obtained, which is only rather weakly dependent on growth conditions and the nature of the arsenic species (As2 or As4). Transmission electron microscopy has shown that no significant precipitation effects occur when higher Si fluxes are used but there is evidence for autocompensation. The maximum PL intensity (300 K) is found at a lower free electron concentration then with Sn-doped films, and is more sharply peaked, but there is no evidence for an anomalous Moss-Burstein shift.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00820260
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  • 25
    Electronic Resource
    Electronic Resource
    Hall mobility of evaporated InAs films prepared at different temperatures (1984)
    Springer
    Applied physics 34 (1984), S. 69-71 
    Details
    ISSN: 1432-0630
    Keywords: 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The behaviour of the Hall mobilityμ H and the carrier concentrationn have been investigated on InAs films as a function of thickness, substrate temperature and annealing treatment. While the Hall mobility showed an increasing trend with substrate temperature and thickness for both as-deposited and annealed films, the carrier concentration for asdeposited films showed a maximum at a particular substrate temperature range while that for annealed films showed a monotonous decreasing behaviour.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617577
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  • 26
    Electronic Resource
    Electronic Resource
    Electrical properties and degradation behavior of hydrogenated amorphous Si alloys for solar cells (1986)
    Springer
    Applied physics 41 (1986), S. 275-283 
    Details
    ISSN: 1432-0630
    Keywords: 85.30 ; 86.30 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electrical properties and the degradation behavior of hydrogenated amorphous silicon alloys (a-Si1−x A x : H, with A=C, Ge, B, P) in designs of pin, pip, nin, and MOS structures are investigated by measuring the dark and light I(V) characteristics and the spectral response as well as the space-charge-limited current (SCLC), the time of flight (TOF) of carriers and the field effect (FE). These investigations give an overview of our recent work combined with new results emphasizing the physics of the a-Si:H pin solar cells. We discuss the stabilizing influence on the degradation behavior achieved by profiling the i layers of the pin solar cells with P and B. Two kinds of pin solar cells, namely glass/SnO2/p(C)in/metal and glass/metal/pin/ITO, are investigated and an explanation of their different spectral response behavior is given. SCLC measurements lead to the conclusion that trapping is also involved in the degradation mechanism, as is recombination. TOF experiments on a-Si1−x Ge x : H pin diodes indicate that the incorporation of Ge widens the tail-state distribution below the conduction band. FE measurements showed densities of gap states of about 5×l016cm−3eV−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616049
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  • 27
    Electronic Resource
    Electronic Resource
    Hydrogen sulphide doping of GaAs and AlxGa1−xAs grown by molecular beam epitaxy (MBE) (1985)
    Springer
    Applied physics 36 (1985), S. 147-151 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract H2S gas has been used during molecular beam epitaxy (MBE) growth of GaAs and Al x Ga1−x As as sulphur vector forn-type doping. Doping efficiencies are less than 10−3 at usual growth temperatures, and are limited by an incorporation competitive surface process, probably 2Ga+H2S→Ga2S+H2. In AlxGa1−x As forx≧0.2 the doping efficiency is further reduced by carrier freeze-out at deep levels. Measured thermal activation energies depend on growth conditions and remain relatively low even up to the direct-indirect bandgap crossover for substrate temperatures in the 585–645
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00624935
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  • 28
    Electronic Resource
    Electronic Resource
    Single-wafer optical processing of semiconductors thin insulator growth for integrated electronic device applications (1988)
    Springer
    Applied physics 46 (1988), S. 255-273 
    Details
    ISSN: 1432-0630
    Keywords: 73.60 ; 77.50 ; 81.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract This paper presents an overview of the single-wafer optical processing techniques for integrated circuit fabrication with an emphasis on their applications to insulator growth. Rapid thermal growth of various thin homogeneous and heterogeneous dielectrics on silicon substrates including silicon dioxide, silicon nitride, nitrided oxides, and composition-tailored insulators will be described and some electronic device applications of the rapidly grown dielectrics will be examined. Multicycle rapid growth processes have been used for dielectric structural engineering and in-situ formation of thin layered insulators. The compositional depth profiles and the electrical characteristics of devices are controlled through the synthesis of an appropriate sequence of the wafer temperature-vs-time profiles and process gas cycles. The ongoing developments and future prospects of single-wafer rapid processing for advanced microelectronics manufacturing will also be discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01210345
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  • 29
    Electronic Resource
    Electronic Resource
    Temperature dependence of photodegradation in amorphous hydrogenated silicon (1988)
    Springer
    Applied physics 46 (1988), S. 5-8 
    Details
    ISSN: 1432-0630
    Keywords: 73.60 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Measurements of steady-state photoconductivity with respect to light-induced defect generation in amorphous hydrogenated silicon (a-Si: H) show that the power index of the time evolution (long-term observation) of the photodegradation is determined by the exposure temperature and the material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615129
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  • 30
    Electronic Resource
    Electronic Resource
    A GaAs MISFET with Ge3N4 gate dielectric (1982)
    Springer
    Applied physics 28 (1982), S. 123-124 
    Details
    ISSN: 1432-0630
    Keywords: 85.30 ; 81.10 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract GaAs MIS field effect transistors with a Ge3N4 dielectric gate have been investigated. No hysteresis loop and drain current drift has been observed in theI D -V Dcharacteristics. However, performance of the devices have been found to be limited by the contact resistance. FromI DS 1/2 -V G plot, the threshold voltage and effective channel mobility of the transistor have been obtained as -4.5V and 2800cm2v−1s−1, respectively. A maximum dc transconductance of 68 mS/mm of gate width has been achieved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617142
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  • 31
    Electronic Resource
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    Spatial distribution of impurities in delta-doped n-type GaAs (1988)
    Springer
    Applied physics 47 (1988), S. 123-129 
    Details
    ISSN: 1432-0630
    Keywords: 81.10 ; 73.60 ; 75.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Capacitance-voltage (CV) profiling measurements on delta-doped n-type GaAs reveal extremely narrow peaks with a full-width at half-maximum of 40 Å. Comparison of experimental with self-consistently calculated CV profiles demonstrates that Si impurities are localized on a length scale of a lattice constant in delta-doped GaAs. Diffusion and segregation are of minor importance. The basic theory of CV measurements on quantummechanical systems such as delta-doped semiconductors is developed and presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618876
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  • 32
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    Ground state magnetic properties of ultrathin fcc Fe and Co films on Cu(001) surfaces (1988)
    Springer
    Applied physics 47 (1988), S. 73-76 
    Details
    ISSN: 1432-0630
    Keywords: 73.60 ; 75.60 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have grown by means of Molecular Beam Epitaxy ultrathin (1 to ∼ 10 ML) films of fcc Fe and Co on a Cu(001) surface, thus stabilizing this high temperature phase of bulk Fe and Co at room temperature. All films, including the single monolayers, are ferromagnetic. The Co films are magnetized in plane, independently on the thickness. Fe films thicker than 2 ML are magnetized along the film normal. Up to now, the statistical uncertainty is still too large to conclusively prove an enhancement of the magnetic moment for the thinnest Co films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00619700
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  • 33
    Electronic Resource
    Electronic Resource
    Amorphous hydrogenated carbon films on semiconductors (1989)
    Springer
    Applied physics 48 (1989), S. 549-558 
    Details
    ISSN: 1432-0630
    Keywords: 79.60 ; 73.40 ; 73.60 ; 73.60H ; 71.25M ; 81.15 ; 46.30P
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The interface properties of hydrogenated amorphous carbon films (a-C:H) on Si and GaAs substrates have been studied by in-situ photoelectron spectroscopy measurements. The a-C:H films have been deposited by direct ion beam deposition. Distinct differences in the interface formation have been observed during film depositon on the two substrates. The data clearly reveal a decomposition of the GaAs at the interface which can be related to the reduced adhesion of a-C: H on the compound semiconductor substrate.
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    URL: http://dx.doi.org/10.1007/BF00617856
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  • 34
    Electronic Resource
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    Transition metal impurities in silicon: New defect reactions (1989)
    Springer
    Applied physics 49 (1989), S. 431-436 
    Details
    ISSN: 1432-0630
    Keywords: 71.55 ; 66.30 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Recent investigations on transition-metal impurities in silicon emphasizing the effect of the combined diffusion of two transition metals are presented and briefly discussed. The electronic properties and basic thermal kinetics are analysed by DLTS. The conversion of a Pd-related multivalent defect atE c-0.35 eV andE c-0.57 eV to the Pd-related defect atE c −0.22 eV is observed, and a Pd-Fe complex level atE c −0.32 eV is identified. The annealing characteristics of the multivalent Rh levels atE c-0.33 eV andE c-0.57 eV are observed, and used to analyse the influence of prior Rh doping on the Au diffusion. A complex formed by the codiffusion of Au and Cu is observed atE v+0.32eV andE v+0.42 eV, and shown to exhibit bistable behavior as does a similarly produced Au-Ni complex observed atE v + 0.35 eV andE v+0.48 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615028
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  • 35
    Electronic Resource
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    The effect of gas adsorption on the electrical resistivity of thin silver films (1984)
    Springer
    Applied physics 35 (1984), S. 13-17 
    Details
    ISSN: 1432-0630
    Keywords: 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Silver films in the thickness range 20–60 nm deposited on glass substrates in UHV conditions were covered stepwise with oxygen, carbon monoxide and ethylene at 77 K. Resistivity was measured in situ. The evaluation of the thickness dependence of resistivity on the basis of a scattering hypothesis leads to scattering cross sections decreasing from O2 to CO and C2H4. The results are explained by considering the energetic structure of the broadened molecular orbitals of the adsorbates near the Fermi level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620294
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  • 36
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    Changes produced in the electrical resistivity of ErH2 thin films when converted to ErH3 due to hydrogen treatment (1984)
    Springer
    Applied physics 35 (1984), S. 263-265 
    Details
    ISSN: 1432-0630
    Keywords: 73.60 ; 68.55 ; 81.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The resistivity of thin films (80–200 Å) of ErH2 increases sharply when heated for 2 h at 300 °C in vacuum in the presence of hydrogen gas at ∼ 10−2 Torr. This confirms that the films, originally metallic conductor, have become converted to semiconducting ErH3 which is in conformity with the structural studies. The negative values of TCR also indicate the semiconducting nature of the hydrogen treated films. Activation energies of the films have been evaluated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617177
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  • 37
    Electronic Resource
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    Optical, structural, electrical and optoelectronic properties of hydrogenated amorphous Si1−x C x alloy thin films prepared by planar magnetron sputtering method (1985)
    Springer
    Applied physics 38 (1985), S. 37-43 
    Details
    ISSN: 1432-0630
    Keywords: 73.60 ; 72.40 ; 78.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Amorphous Si1−xCx: H thin films were prepared by the rf magnetron sputtering method using a composite target of silicon and graphite. The dependence of the optical, structural, electrical, and optoelectronic properties on the carbon contentx was investigated, by measuring the optical absorption spectra, ir spectra, dark conductivity, photoconductivity and ESCA spectra. The optical gap was found to be unchanged with increasingx below about 0.6, in spite of the increase in the amount of the SiC bond. This is considered to be due to the formation of the carbon clusters. It is found that the photosensitivity shows a maximum at aboutx = 0.2, and is about one order of magnitude larger than the film withx = 0. This is related to the decrease in the dark conductivity, which is ascribed both to the formation of the SiC bond and to the reorganization of the defect-rich structure of sputter-deposited amorphous Si by the addition of about 20% carbon. The photoconductive effect was gradually lost in the range ofx above 0.6. In this range, the optical gap increases rapidly owing to the rapid increase of the SiC bond.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618724
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  • 38
    Electronic Resource
    Electronic Resource
    Validity of quasi-static capacitance-voltage measurements applied to hydrogenated amorphous silicon diodes (1986)
    Springer
    Applied physics 40 (1986), S. 171-176 
    Details
    ISSN: 1432-0630
    Keywords: 73.60 ; 71.20 ; 86.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have reexamined the validity of quasi-static capacitance-voltage (C-V) measurements when applied to hydrogenated amorphous silicon (a-Si: H) diodes. Displacement currents with the application of a linear ramp voltage to an a-Si:H Schottky diode exhibit a slow response with time constants ranging 0.1–1 s which cannot be measured completely by the conventional measurements. The measured capacitance and the effective density of gap states obtained from the measurement depend on the timing of current observation even when the small value of the order of 0.01 V/s is chosen for the ramp rate. We propose a possible means to realize the true quasi-staticC-V measurement of a-Si:H diodes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617400
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  • 39
    Electronic Resource
    Electronic Resource
    Low-temperature fabrication of silicon nitride films by ArF excimer laser irradiation (1988)
    Springer
    Applied physics 46 (1988), S. 249-253 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60 ; 77.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The low-temperature fabrication of silicon nitride films by ArF excimer laser irradiation has been studied. Two fabrication methods are presented. One is photoenhanced direct nitridation of a silicon surface with NH3 for very thin gate insulators, and the other is photo-enhanced deposition of silicon nitride films with Si2H6 and NH3 gases for stable passivation films. The ArF excimer laser irradiation dissociates the NH3 gas producing NH and NH2 radicals which proved effective in instigating the nitridation reaction. The quality of both films has been much improved and the growth temperature has been lowered by using laser irradiation. These photo-enhanced processes seem to be promising ULSI techniques because they do not depend on high temperatures and are free from possible reactor contamination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01210344
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  • 40
    Electronic Resource
    Electronic Resource
    Single-wafer optical processing of semiconductors: Thin insulator growth for integrated electronic device applications (1988)
    Springer
    Applied physics 46 (1988), S. 255-273 
    Details
    ISSN: 1432-0630
    Keywords: 73.60 ; 77.50 ; 81.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract This paper presents an overview of the single-wafer optical processing techniques for integrated circuit fabrication with an emphasis on their applications to insulator growth. Rapid thermal growth of various thin homogeneous and heterogeneous dielectrics on silicon substrates including silicon dioxide, silicon nitride, nitrided oxides, and composition-tailored insulators will be described and some electronic device applications of the rapidly grown dielectrics will be examined. Multicycle rapid growth processes have been used for dielectric structural engineering and in-situ formation of thin layered insulators. The compositional depth profiles and the electrical characteristics of devices are controlled through the synthesis of an appropriate sequence of the wafer temperature-vs-time profiles and process gas cycles. The ongoing developments and future prospects of single-wafer rapid processing for advanced microelectronics manufacturing will also be discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01141591
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  • 41
    Electronic Resource
    Electronic Resource
    Electrical conduction in Cu/Mn multilayer films (1989)
    Springer
    Applied physics 49 (1989), S. 273-277 
    Details
    ISSN: 1432-0630
    Keywords: 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Metallic superlattices of copper and manganese have been synthesized on glass and mica substrates by a sequential evaporation technique. The electrical resistivity and the temperature coefficient of resistance (TCR) of layered Cu/Mn has been studied for various thicknesses (d) in the range 2–6 nm by varying the number of double layers (n) from 5–35. The transition from a negative to positive TCR has been observed ford 〉5 nm. The thickness dependence of room temperature resistivity (ϱ RT) and TCR shows oscillatory behaviour.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616854
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