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  • Articles  (22)
  • Plasma etching  (15)
  • Microwave plasma  (7)
  • 1985-1989  (15)
  • 1980-1984  (7)
  • 1960-1964
  • 1940-1944
  • Technology  (22)
  • 1
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    Springer
    Plasma chemistry and plasma processing 1 (1981), S. 37-52 
    ISSN: 1572-8986
    Keywords: Plasma etching ; formation of etchants ; polymers
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract A model is presented that accounts for the formation of various etchants, unsaturated species, and polymers in halocarbon/oxidant plasma etching mixtures. It is discussed in terms of emission and mass spectral measurements of stable and unstable products in CF3Cl, CF3Br, C2F6, and related systems. In this reaction scheme, fluorocarbon precursors derived from the building block radical CF2 are saturated during reactions with atoms and reactive molecules. The most reactive species are preferentially removed by the saturation reactions. An ordering of this reactivity can be used to predict the dominant atomic etchants as a function of halocarbon and additive gas compositions.
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  • 2
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    Plasma chemistry and plasma processing 1 (1981), S. 317-363 
    ISSN: 1572-8986
    Keywords: Plasma etching ; etchant gas mixtures ; etching parameters ; review
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Theory and practice of plasma etching are critically reviewed. Some unifying principles are extended to explain a large body of experimental data, encompassing more than 20 substrate materials in dozens of etchant gas mixtures. These basic concepts can be used to select new etchants and plasma etching parameters.
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  • 3
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    Plasma chemistry and plasma processing 1 (1981), S. 377-395 
    ISSN: 1572-8986
    Keywords: Microwave plasma ; polymerization ; plasma diagnostics
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The microwave plasmas of gaseous mixtures of methane-argon and propyleneargon were analyzed along the flow stream by the electrical double floating probe system, optical spectroscopy, and quadrupole mass spectrometry. The plasma variables measured and considered were current density, electric field strength, electron temperature, positive ion and electron concentrations, and concentration of pyrolyzed and polymerized species. The results indicate that an irreversible process of polymerization of the hydrocarbons takes place in the plasma. The polymerization process reaches its maximum conversion downstream beyond the microwave cavity. The extent of polymerization was correlated to the concentration of positive ions and electrons in the plasma.
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  • 4
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    Plasma chemistry and plasma processing 7 (1987), S. 341-348 
    ISSN: 1572-8986
    Keywords: Microwave plasma ; chemical vapor deposition ; optical fibers
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract An atmospheric-pressure CVD method is described that uses microwave plasma for manufacturing preforms that are used in the production of optical fibers for telecommunication. The method takes advantage of the very high deposition efficiency and high deposition rates attained when using microwave plasma as well as of efficient glassing of oxide layers by means of the traditional system of burners. A simple theoretical model that allows calculations of close-to-reality plasma temperature profiles is presented.
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  • 5
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    Plasma chemistry and plasma processing 8 (1988), S. 349-382 
    ISSN: 1572-8986
    Keywords: Plasma etching ; polysilicon ; chlorine-argon plasma ; experiments ; statistical analysis
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The effects of base pressure, etch pressure, gas flow rates of HCl, Cl2, and argon, hexode temperature, DC self-bias, initial polysilicon thickness, and percent of overetch on the etch performance of polysilicon are examined. Statistical design of the experiments provided linear and quadratic models of the etch performance in terms of the aforementioned variables. These models were used to determine the relative importance of each process variable on the etch performance. Optical emission data were utilized as a means of endpoint detection and as a monitor of etch activity. The results indicate that the etch performance is more responsive to variations in physical mechanisms as opposed to chemical processes within the variable ranges used in these experiments.
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  • 6
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    Plasma chemistry and plasma processing 6 (1986), S. 1-10 
    ISSN: 1572-8986
    Keywords: Plasma etching ; silicon in CF4 ; etching directionality ; micro balance
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Two quartz crystal microbalances have been mounted in a planar rf discharge system in such a way that the potential of the microbalances with respect to the glow discharge can be varied. This apparatus allows a rapid simulation of the etching directionality that can be expected in real pattern transfer situations in that operating one microbalance at ground and one at a negative potential gives a measure of the sidewall and vertical etch rates, respectively. The voltage threshold for ion-assisted etching has been determined to be 20 V which is the approximate value of the plasma potential in this asymmetric system.
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  • 7
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    Plasma chemistry and plasma processing 6 (1986), S. 11-25 
    ISSN: 1572-8986
    Keywords: Plasma etching ; CF3 reactions ; CF2 reactions ; F atom reactions ; association reactions
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Reaction rate coefficients have been measured at 295 K for both CF3 and CF2 with atomic and molecular fluorine. The reaction between CF3 and F was studied over a gas number density range of (2.4–23)×1016 cm−3 with helium as the bath gas. The measured rate coefficient increased from (1.1–1.7)×10−11 cm3 s−1 as the gas number density increased over this range. In contrast to this relatively small change in rate coefficient with gas number density, the rate coefficient for CF2+F increased from (0.4–2.3)×10−12 cm3 s−1 as the helium gas number density increased from (3.4–28.4)×1016 cm−3. Even for the highest bath gas number density employed, the rate coefficient was still more than an order of magnitude lower than earlier measurements of this coefficient performed at comparable gas number densities. Both these association reactions are examined from the standpoint of the Gorin model for association of radicals and use is made of unimolecular dissociation theory to examine the expected dependence on gas number density. The calculations reveal that CF3+F can be explained satisfactorily in these terms but CF2+F is not well described by the simple Gorin model for association. CF3 was found to react with molecular fluorine with a rate coefficient of (7±2)×10−14 cm3 s−1 whereas only an upper limit of 2×10−15 cm3 s−1 could be placed on the rate coefficient for the reaction between CF2 and F2. The values obtained for this set of reactions mean that the reaction between CF3 and F will play an important role in plasmas containing CF4. The high rate coefficient will mean that, under certain conditions, this particular reaction will control the amount of CF4 consumed. On the other hand, the much lower rate coefficient for reactions between CF2 and F means that CF2 will attain much higher concentrations than CF3 in plasmas where these combination reactions are dominant.
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  • 8
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    Plasma chemistry and plasma processing 4 (1984), S. 271-283 
    ISSN: 1572-8986
    Keywords: Plasma etching ; CF2 reactions ; F atom production ; CF4-O2 plasmas ; COF reactions
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Reactions between CF2 and O(3P) have been studied at 295 K in a gas flow reactor sampled by a mass spectrometer. The major reaction for CF2 has been found to be $$CF_2 + O \to COF + F$$ with $$CF_2 + O \to CO + 2F(F_2 )$$ more than a factor of three slower. The rate coefficient for all loss processes for CF2 on reaction with O is (1.8±0.4)×10−11 cm3 s−1. The COF produced in (18) undergoes a fast reaction with O to produce predominantly CO2. $$COF + O \to CO_2 + F$$ It is uncertain from the results whether or not $$COF + O \to CO + FO$$ occurs, but in any event (19) is the major route. The rate coefficient for the loss of COF in this system [i.e., the combined rate coefficients for (19) and (20)] is (9.3±2.1)×10−11 cm3 s−1. Stable product analysis reveals that for each CF2 radical consumed, the following distribution of stable products is obtained: COF2 (0.04±0.02), CO (0.21±0.04), and CO2 (0.75±0.05). Thus COF2, which we assume is produced via $$CF_2 + O \xrightarrow{M} COF_2$$ is a very minor product in this reaction sequence. The measured rate coefficients demonstrate that reactions (18) and (19) are important sources of F atoms in CF4/O2 plasmas.
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  • 9
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    Plasma chemistry and plasma processing 5 (1985), S. 333-351 
    ISSN: 1572-8986
    Keywords: Plasma etching ; SF6 discharge ; tungsten ; molybdenum ; mass spectrometry ; WF6 ; WOF4
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The etching rates and reaction products of refractory metals (W, Mo, and Ta) and silicon have been studied in a SF6-O2 r.f. plasma at 0.2 torr. The relative concentrations of WF6 and WOF4 and the intensities of the WF n + (n=3−5), WOF m + (m=1−3), MoF n + , and MoF m + ions have been measured by mass spectroscopy. An analysis of the neutral composition of the plasma during etching of these metals and a comparison with the results obtained for silicon show that at least two species are involved for W and Mo etching: fluorine and oxygen atoms. A reaction scheme is proposed.
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  • 10
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    Plasma chemistry and plasma processing 8 (1988), S. 293-314 
    ISSN: 1572-8986
    Keywords: Microwave plasma ; chlorinated hydrocarbon ; global kinetic analysis
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The reaction of trichloroethylene (C2HCl3) with water vapor or molecular hydrogen has been studied in a low-pressure [ca. 5 Torr (0.67 kPa)] microwave plasma tubular flow reactor. The experimental apparatus included feed introduction systems, a microwave plasma reactor, and full product analysis by flame ionization and thermal-conductivity gas chromatography, mass spectrometry, and specific ion or pH detection for hydrogen chloride [HCl]. Conversions of C2HCl3 in the range 50 to almost 100% are achieved. Product analyses indicate conversion to HCl, some light hydrocarbons, nonparent chlorocarbons, and soot C(s). For the H2O case, carbon monoxide and trace carbon dioxide were produced in place of some light hydrocarbons and C(s). At least 85 mole % of chlorine (Cl) from the converted parent C2HCl3 forms thermodynamically stable HCl at parent conversions of 80% or more. The remaining chlorine was present as nonparent chlorocarbons. Preliminary kinetic analyses were performed. The global reaction in the plasma was found to follow one-half-order kinetic dependence on each of C2HCl3 and H2O or H2. Elementary plasma reaction mechanisms are presented to account for C2HCl3 conversion and the observed product distribution.
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  • 11
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    Plasma chemistry and plasma processing 8 (1988), S. 331-346 
    ISSN: 1572-8986
    Keywords: Microwave plasma ; plasma etching ; cellulose ; coating distribution ; ESCA ; neutron activation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The effects of plasma etching on surface structure and chemistry of several papers have been investigated. Plasma etching acts like a fine microtome, continuously removing infinitesimally thin layers at the surface. It has allowed us to observe the internal structure of fibers, and interfiber bonding. The kinetics of plasma etching and its temperature dependence are reported; the thermal activation energy determined from the latter was found to be 0.15 eV. Possible applications of plasma etching techniques to study the structural and physical properites of paper in the z-direction and the distribution of coating material across the thickness of a paper sample are discussed.
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  • 12
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    Plasma chemistry and plasma processing 2 (1982), S. 1-41 
    ISSN: 1572-8986
    Keywords: Plasma etching ; mechanisms ; apparatus selection ; review
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The mechanistic and parametric complexity of a plasma etching environment often causes confusion and delays in the development of a suitable plasma etching process. This paper is an attempt to alleviate this problem by discussing some of the important physical and chemical phenomena and, where possible, relating these phenomena to apparatus selection and operation.
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  • 13
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    Plasma chemistry and plasma processing 2 (1982), S. 141-155 
    ISSN: 1572-8986
    Keywords: Plasma etching ; plasma chemistry ; aluminum etching
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The chemistry occurring in glow discharges used to etch aluminum and aluminum alloy films is examined and is related to recurring problms such as initiation and reproducibility of etching, polymer or residue formation, photoresist degradation, aluminum corrosion, and safety aspects. The relative effects of different etch gases on these problems is discussed in light of aluminum surface chemistry and gas-phase plasma chemistry.
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  • 14
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    Plasma chemistry and plasma processing 5 (1985), S. 255-261 
    ISSN: 1572-8986
    Keywords: Microwave plasma ; surface-wave discharge ; Stark broadening ; argon plasma
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The electron density of microwave-generated surface-wave discharges in argon have been measured using Stark broadening and calculated from the measured wavelengths of the standing surface wave. Results obtained from these two techniques compare well. The electron density varies from 1013 to 1014/cm3 for pressures ranging from 50 to 800 torr.
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  • 15
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    Plasma chemistry and plasma processing 6 (1986), S. 197-203 
    ISSN: 1572-8986
    Keywords: Plasma etching ; organic radicals ; metallorganic compounds
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract A new method for the etching of In, Sn, Pb, Sb, Bi, and Zn films in methane and acetone discharges was examined with respect to various parameters such as electrode temperature, power density, bias, and reaction period. The etching species are assumed to be CH3 radicals forming a volatile metallorganic compound, since etch rates in hydrogen plasmas or argon sputter rates are orders of magnitude lower. Etch rates up to 1600 Å/min could be obtained.
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  • 16
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    Plasma chemistry and plasma processing 6 (1986), S. 205-230 
    ISSN: 1572-8986
    Keywords: Plasma etching ; gas-phase reactions ; modelling
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract A model has been developed in an attempt to explain the chemistry which occurs in plasmas produced in mixtures of CF4 and O2. Emphasis is placed on gas-phase free radical reactions, and the predictions of the model are compared with experimental results. Dissociation rates following electron impact are deduced mainly from experimental observations although relative dissociation rates have been calculated. An important assumption of the model is that CF2 can be produced as a primary dissociation product following electron impact. Furthermore, this process is favored over that producing CF3 by more than a factor of 2. Experimental evidence is presented to support this assumption. Although the model agrees well with experiment on the total amount of fluorine produced, some discrepancy exists between the predicted and measured values of [F2]. It is suggested that the higher concentrations detected in the experiments resulted from recombination of F atoms in the sampling region. The agreement for concentrations of CO2, CO, and COF2 is generally better than a factor of 2 over a wide range of experimental conditions.
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  • 17
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    Plasma chemistry and plasma processing 6 (1986), S. 231-246 
    ISSN: 1572-8986
    Keywords: Plasma etching ; CF4 chemistry ; modelling ; comparison with experiments
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract A model has been developed to describe the chemistry which occurs in CF4 plasmas and the etching of Si both in the plasma and downstream. One very important feature of this model is that for discharge residence times which vary by more than an order of magnitude, the amount of CF4 consumed is low and relatively constant. This is because the gas-phase combination reactions between F and both CF3 and CF2 lead to the rapid reforming of CF4. The model predicts that CF2 is a major species in the gas phase and that the [F] detected as a sample point downstream is a very sensitive function of [CF2]/[F] in the discharge. Even though the calculations show that [F] in the discharge varies only slightly over the wide range of experimental conditions considered, large variations in [F] at the sample point occur because the [CF2]/[F] ratio in the discharge changes. The concentrations of C2F6 and SiF4 are predicted to within a factor of 2 over a very wide range of experimental conditions. This confirms the importance of gas-phase free radical reactions in the etching of Si.
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  • 18
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    Plasma chemistry and plasma processing 6 (1986), S. 247-258 
    ISSN: 1572-8986
    Keywords: Plasma etching ; SF6-O2 plasmas ; SF5 reactions ; SF2 reactions ; plasma chemistry
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Reactions of both SF5 and SF2 with O(3 P) and molecular oxygen have been studied at 295 K in a gas flow reactor sampled by a mass spectrometer. For reactions with O(3 P), rate coefficients of (2.0±0.5)×10−11 cm3 s−1 and (10.8±2.0)×10−11 cm3 s−1 were obtained for SF5 and SF2 respectively. The rate coefficients for reactions with O2 are orders of magnitude lower, with an estimated upper limit of 5×10−16 cm3 s−1 for both SF5 and SF2. Reaction of SF2 with O(3 P) leads to the production of SOF which then reacts with O(3 P) with a rate coefficient of (7.9±2.0)×10−11 cm3 s−1. Both SO and SO2 are products in the reaction sequence initiated by reaction between SF2 and O(3 P). Although considerable uncertainty exists for the heat of formation of SOF, it appears that SO arises only from reaction between SOF and O atoms which is also the source of SO2. These results are discussed in terms of a reaction scheme proposed earlier to explain processes occurring during the plasma etching of Si in SF6/O2 plasmas. A comparison between the results obtained here and those reported earlier for reactions of both CF3 and CF2 with O and O2 shows that there is a marked similarity in the free radical chemistry which occurs in SF6/O2 and CF4/O2 plasmas.
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  • 19
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    Plasma chemistry and plasma processing 8 (1988), S. 189-206 
    ISSN: 1572-8986
    Keywords: Plasma etching ; optical emission spectroscopy ; actinometry
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Optical emission intensities in the sheath region are not the same as those in the plasma region. This is because not only the electron density, but also the electron temperature, is different between the two regions. In this study a Cu rod is inserted into the plasma, and the rod potential is altered from the ground potential to a negative potential with a frequency of 20 Hz. The optical emission ray comes from the sheath region when the negative potential is applied, but comes form the plasma region at the ground potential. We can immediately detect the difference of the emission intensities between the plasma and the sheath regions by a lock-in amplifier. The pre-amplifier is placed prior to the lock-in amplifier. By using this pre-amplifier the output signal of the lock-in amplifier can be adjusted to zero for any emission line. the emission spectra from a CF4+O2 plasma are measured. A small amount of Ar gas and/or N2 gas is added and the output signal of the lock-in amplifier is adjusted to zero for either the Ar emission line or the N2 emission line. In a fluorine-contained plasma the F emission intensity normalized by the Ar one has been widely used in order to obtain the F density. This validity is confirmed by the present experiment. It is also confirmed that the CO emission intensity normalized by that of N2 is proportional to the CO density. The metastable states play an important role in the optical emission intensities of CO and N2 molecules.
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  • 20
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    Plasma chemistry and plasma processing 8 (1988), S. 263-280 
    ISSN: 1572-8986
    Keywords: Microwave plasma ; gas-phase reactions ; mass spectrometer sampling ; discharge chemistry of SF6 with O2
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Processes which occur in microwave discharges of dilute mixtures of SF6 and O2 in He have been examined using a flow reactor sampled by a mass spectrometer. Two classes of experiments were performed. In the first set of experiments, mixtures containing 6×1011 cm−3 SF6, 6×1016 cm−3 He, and O2 in the range (0–3.6)×1013 cm−3 were passed through a 20-W 2450-MHz microwave discharge. The gas mixtures arriving at a sample point downstream from the discharge were examined for SF6, SF4, SOF2, SOF4, SO2F2, SO2, F, and O. In the second class of experiments, rate coefficients were measured for the reactions of SF4 with O and O2 and for the reaction of SF with O. The rate coefficient for the reaction of SF with O was found to be (4.2±1.5)×10−11 cm−3 s−1. SF4 was found to react so slowly with both oxygen atoms and oxygen molecules that only upper limits could be placed on the rate coefficients for these reactions. These values were 2×10−14 cm3 s−1 and 5×10−15 cm3 s−1 for reactions with O and O2 respectively. The observed distribution of products from the discharged mixtures is discussed in terms of the measured rate coefficients.
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  • 21
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    Plasma chemistry and plasma processing 8 (1988), S. 315-329 
    ISSN: 1572-8986
    Keywords: Plasma etching ; polymers ; microwave ; radiofrequency ; effect of structure
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract We have investigated O2/CF4 plasma etching of five commercial polymers: polyimide, polyamide, polyethylene terephthalate, polycarbonate and cured epoxy resin. A new large-area microwave plasma apparatus has been used in this work, but the same apparatus can also be used as a capacitively coupled radiofrequency (13.56 MHz) discharge reactor. The effect of operating parameters such as pressure, etchant gas composition, excitation frequency and sample temperature upon etch kinetics has been examined. We have observed distinct maxima in the etch rate as functions of pressure and CF4 concentration. Activation, energies evaluated from the Arrhenius plots fall in the range 0.04-0.2 eV, in agreement with data in the literature. Dry etch susceptibility of a given polymer correlates strongly with the degree of unsaturation in the polymer's structure
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  • 22
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    Plasma chemistry and plasma processing 3 (1983), S. 235-248 
    ISSN: 1572-8986
    Keywords: Microwave plasma ; plasma polymerization ; silicon tetrachloride ; experimental
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Mass spectrometry has been used to analyze microwave-induced plasmas of silicon tetrachloride diluted in mixtures of hydrogen and argon. The effects of process parameters such as pressure in the reactor, power input, and the composition of the gas mixture were investigated. Sampling by a quadrupole mass-spectrometer along the gas stream showed that the reactions were initiated upstream where the reactants enter the plasma. It was found that the input power had an optimal value for the decomposition rate of SiCl4; above that optimum, recombination occurred downstream. Upstream the concentrations of SiCl4 decrease with increasing pressure in the range 1–10 torr, independent of the input power. The effect of admixing argon to the reaction mixture is discussed, and the results obtained are correlated to experimental results reported in previous works concerning silicon deposition from SiCl4 on a grounded substrate.
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