ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

Ihre E-Mail wurde erfolgreich gesendet. Bitte prüfen Sie Ihren Maileingang.

Leider ist ein Fehler beim E-Mail-Versand aufgetreten. Bitte versuchen Sie es erneut.

Vorgang fortführen?

Exportieren
Filter
  • Periodicals Archive Online (PAO)  (60.653)
  • American Institute of Physics (AIP)  (49.884)
  • International Union of Crystallography  (31.988)
  • 1995-1999  (65.621)
  • 1980-1984  (29.123)
  • 1975-1979  (25.480)
  • 1970-1974  (22.301)
Sammlung
Verlag/Herausgeber
Erscheinungszeitraum
Jahr
  • 1
    facet.materialart.
    Unbekannt
    Paris : Periodicals Archive Online (PAO)
    The OECD observer. 193 (1995:Apr./May) 23 
    ISSN: 0029-7054
    Thema: Wirtschaftswissenschaften
    Beschreibung / Inhaltsverzeichnis: Agriculture
    Notizen: Analysis
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 2
    facet.materialart.
    Unbekannt
    Dordrecht : Periodicals Archive Online (PAO)
    Synthese. 27:1/2 (1974:mei/juni) 189 
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 3
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1695-1697 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A critical point in device fabrication based on GaN is the controlled doping and the incorporation of impurities like, e.g., oxygen. We have explored the adsorption of oxygen at the wurtzite (0001) and (0001¯) GaN surfaces employing density-functional theory. Our results show that both surface orientations are very active towards oxygen adsorption, explaining the high oxygen concentrations typically observed in GaN. However, the (0001) and (0001¯) surfaces behave differently and oxygen incorporation is expected to be higher at the (0001¯) surface. The different reactivity is explained in terms of the specific structural configurations. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 4
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 487-489 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The diffusion of Ga and N adatoms has been studied for the technologically relevant wurtzite (0001¯) and (0001) surfaces employing density-functional theory. Our calculations reveal a very different diffusivity for Ga and N adatoms on the equilibrium surfaces: While Ga is very mobile at typical growth temperatures, the diffusion of N is by orders of magnitude slower. These results give a very detailed insight of how and under which growth conditions N adatoms can be stabilized and efficiently incorporated at the surface. We further find that the presence of excess N strongly increases the Ga diffusion barrier and discuss the consequences for the growth of GaN. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 5
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3420-3422 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report the photodegradation of poly(p-phenylenevinylene) polymer when the film was irradiated with laser light at a wavelength corresponding to the peak wavelength of electroluminescence. Degradation in photoluminescent properties was significant in an air environment but not under vacuum. This indicates that the oxygen in air aids photodegradation and this hypothesis was confirmed by optical spectroscopy. This degradation may be associated with long-term stability of the electroluminescence device. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6937-6939 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: X-ray diffraction has been used to study the influence of the mask material on properties of GaAs layers grown by the liquid phase epitaxial lateral overgrowth (ELO) on (100) GaAs substrates. We show that ELO stripes bend towards the SiO2 mask in the direction perpendicular to seeding lines in a similar way to that as studied recently by x-ray topography for Si lamellae [H. Raidt, R. Kohler, F. Banhart, B. Jenichen, A. Gutjahr, M. Konuma, I. Silier, and E. Bauser, J. Appl. Phys. 80, 4101 (1996)]. The bending disappears when the mask is removed by selective etching. This microscopic bending is reduced by nearly 2 orders of magnitude when graphite instead of SiO2 is used to mask the substrate. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1965-1969 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: High resolution x-ray diffraction has been used to study strain in GaAs layers grown on GaAs substrates by the liquid phase epitaxial lateral overgrowth (ELO) technique. We show that the lattice and thermal expansion coefficient mismatch between the subsequent layers and the substrate, as well as the built-in strain in the SiO2 masking film, lead to long-range deformations (macroscopic bending) extending over the whole area of the sample. Moreover, we show evidences that microscopic bending of individual ELO stripes takes place due to adhesion of their laterally overgrown parts to the masking film. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 8
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2749-2751 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: X-ray diffraction was used to study deformation of GaAs layers grown on Si substrates by liquid phase epitaxial lateral overgrowth (ELO). We show that, in the direction perpendicular to seeding lines, the GaAs ELO stripes bend outwards from the mask due to the tensile strain in the GaAs buffer layer. As narrow as 94 arcsec (004) rocking curves have been measured for the laterally grown parts of ELO stripes what indicates the high quality of ELO GaAs layers grown on GaAs-coated Si substrates. We use our model of strain relaxation via bending of laterally grown parts of ELO layers to explain some recently published results on bending of ELO GaN layers on SiC and sapphire substrates. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 9
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 109 (1998), S. 658-669 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: A new type of crystalline structure for nonlinear optics whereby octupolar symmetry features are displayed at both molecular and crystalline levels is exemplified by the prototype 2,4,6-triaryloxy-1,3,5-triazine (TPOT) crystal and analyzed in terms of both individual molecular responses and crystal packing features. Polarized harmonic light scattering permits the full determination of the molecular β hyperpolarizability tensor and confirms the octupolar trigonal symmetry of the TPOT molecule. An oriented gas model is used to infer therefrom an estimate of the crystalline nonlinear d tensor which is predicted to be of the same order as that of the reference dipolar N-4-nitrophenyl-(L)-prolinol crystal. The concept of optimal packing toward quadratic nonlinear optics, which had been initially introduced in the realm of quasi-one-dimensional structures, is revisited and enlarged to encompass more isotropic uniaxial structures potentially amenable, in the case of octupoles, to larger optimal values than in the one-dimensional case. Moreover, considerations pertaining to phase matching which had been left aside in the earlier one-dimensional optimization framework are now considered and the various type I and type II configurations compared for both one-dimensional and octupolar uniaxial structures. Application perspectives of octupolar structures toward short pulse nonlinear optics are discussed: their structurally built-in polarization independence is outlined as a major asset in contrast with the more traditional one-dimensional structures. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 10
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 105 (1996), S. 8111-8116 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: The photoinitiated unimolecular decomposition of jet-cooled HNCO has been studied following S1(1A″)←S0(1A′) excitation near the thresholds of the spin-allowed dissociation channels: (1) H(2S)+NCO(X2Π) and (2) NH(a1Δ)+CO(X1Σ+), which are separated by 4470 cm−1. Photofragment yield spectra of NCO(X2Π) and NH (a1Δ) were obtained in selected regions in the 260–220 nm photolysis range. The NCO(X2Π)yield rises abruptly at 38 380 cm−1 and the spectrum exhibits structures as narrow as 0.8 cm−1 near the threshold. The linewidths increase only slowly with photolysis energy. The jet-cooled absorption spectrum near the channel (1) threshold [D0(H+NCO)] was obtained using two-photon excitation via the S1 state, terminating in a fluorescent product. The absorption spectrum is similar to the NCO yield spectrum, and its intensity does not diminish noticeably above D0(H+NCO), indicating that dissociation near threshold is slow. The NCO product near threshold is cold, as is typical of a barrierless reaction. NH (a1Δ) products appear first at 42 840 cm−1, but their yield is initially very small, as evidenced also by the insignificant decrease in the NCO yield in the threshold region of channel (2). The NH (a1Δ) yield increases faster at higher photolysis energies and the linewidths increase as well. At the channel (2) threshold, the NH (a1Δ) product is generated only in the lowest rotational level, J=2, and rotational excitation increases with photolysis energy. We propose that in the range 260–230 nm, HNCO (S1) undergoes radiationless decay terminating in S0/T1 followed by unimolecular reaction. Decompositions via channels (1) and (2) proceed without significant exit channel barriers. At wavelengths shorter than 230 nm, the participation of an additional, direct pathway cannot be ruled out. The jet-cooled photofragment yield spectra allow the determination, with good accuracy, of thermochemical values relevant to HNCO decomposition. The following heats of formation are recommended: ΔH0f(HNCO)=−27.8±0.4 kcal/mol, and ΔH0f(NCO)=30.3±0.4 kcal/mol. These results are in excellent agreement with recent determinations using different experimental techniques. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
Schließen ⊗
Diese Webseite nutzt Cookies und das Analyse-Tool Matomo. Weitere Informationen finden Sie hier...