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  • Springer  (173,866)
  • PANGAEA  (57,584)
  • Springer Nature  (45,107)
  • American Institute of Physics (AIP)  (26,481)
  • 2000-2004  (303,038)
Collection
Keywords
Publisher
Language
Years
Year
  • 1
    Unknown
    The Conversion of Liquid Rocket Fuels : Risk Assessment, Technology and Treatment Options for the Conversion of Abandoned Liquid Ballistic Missile Propellants (Fuels and Oxidizers) in Azerbaijan (2004)
    Springer
    Details
    Description / Table of Contents: Prof. Dr. -Ing. Wolfgang Spyra Brandenburg University of Technology in Cottbus, Germany The demilitarization and conversion of military properties wor- wide has been a topic of growing importance since the end of the Cold War. The slowing of the arms race brought on by weapons treaties and relaxed tensions between NATO and Warsaw Pact nations caused sto- piles of conventional weapons to become superfluous. The need to process and dispose of such weapons began more quickly in NATO countries. This demilitarization process began shortly after the reunification of Germany and was largely completed by the mid to late 1990’s. The remaining process, no small task in itself, of converting lands formerly used by the military into safe and environmentally acceptable landscapes may continue for decades to come. Due to a lack of resources and technology, the process of demilitarization in the former Warsaw Pact countries has launched more slowly. In 2002 both Georgia and Moldova finished projects which destroyed their stocks of liquid ballistic missile components. Both these projects were carried out through the cooperative support of trans-national organizations, private contractors, and research institutions. The Republic of Azerbaijan now finds itself at the beginning of its demilitarization process. Stored at the country’s military depots are over 2000 tons of missile fuels, oxidizer, and chemical additives. This hazardous waste is kept in tanks intended only for temporary transport and storage.
    Pages: Online-Ressource (X, 148 pages)
    ISBN: 9781402023811
    URL: https://doi.org/10.1007/1-4020-2381-2
    Language: English
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    E-BOOK
  • 2
    Unknown
    Effects of Space Weather on Technology Infrastructure : Proceedings of the NATO ARW on Effects of Space Weather on Technology Infrastructure, Rhodes, Greece, from 25 to 29 March 2003. (2004)
    Springer
    Details
    Keywords: communication ; design ; dynamics ; environment ; network ; physics ; power transmission ; radio ; satellite ; simulation ; technology ; transmission
    Description / Table of Contents: The 17 chapters of this book grew out of the tutorial lectures given by leading world-class experts at the NATO Advanced Research Workshop “Effects of Space Weather on Technology Infrastructure” - ESPRIT, which was held in Rhodes on March 25-29, 2004. All manuscripts were refereed and subsequently meticulously edited by the editor to ensure the highest quality for this monograph. I owe particular thanks to the lecturers of the ESPRIT Advanced Research Workshop for producing these excellent tutorial reviews, which convey the essential knowledge and the latest advances in our field. Due to the breadth, extensive literature citations and quality of the reviews we expect this publication to serve extremely well as a reference book. Multimedia material referring to individual chapters of the book is accessible on the accompanying CD. The aim of ESPRIT was to assess existing knowledge and identify future actions regarding monitoring, forecasting and mitigation of space weather induced malfunction and damage of vital technological systems operating in space and on the ground.
    ISBN: 9781402027543
    URL: https://doi.org/10.1007/1-4020-2754-0
    Language: English
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    E-BOOK
  • 3
    Unknown
    Strategic decision making : applying the analytic hierarchy process (2004)
    London ; New York : Springer
    Decision engineering  
    Details
    Keywords: Decision making, Mathematical models. ; Decision making, Methodology.
    Pages: ix, 172 p.
    ISBN: 1-85233-864-4
    URL: http://www.netLibrary.com/urlapi.asp?action=summary&v=1&bookid=108180
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    E-Book (German National Licenses)
  • 4
    Unknown
    Web services, E-Business, and the Semantic Web : second international workshop, WES 2003, Klagenfurt, Austria, June 16-17, 2003 ; WES 2003 (2004)
    Berlin ; New York : Springer
    Lecture notes in computer science  
    Details
    Keywords: Semantic Web, Congresses.
    Pages: x, 145 p.
    ISBN: 3-540-25982-1
    URL: http://www.netLibrary.com/urlapi.asp?action=summary&v=1&bookid=130186
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    E-Book (German National Licenses)
  • 5
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    Unknown
    Early warning systems for natural disaster reduction (2003)
    Springer
    Details
    Publication Date: 2020-02-12
    Keywords: 550 - Earth sciences
    Type: info:eu-repo/semantics/book
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    PAPER (OA)
  • 6
    facet.materialart.
    Unknown
    GPS : theory, algorithms and applications (2003)
    Springer
    Details
    Publication Date: 2020-02-12
    Keywords: 550 - Earth sciences
    Type: info:eu-repo/semantics/book
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  • 7
    Electronic Resource
    Electronic Resource
    Micro-Raman scattering in laterally epitaxial overgrown GaN (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5840-5852 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study, micro-Raman spectroscopy has been used to investigate the vibrational properties of laterally epitaxial overgrown (LEO) GaN. The LEO GaN films were grown by metal organic chemical vapor deposition on a 2 in. sapphire substrate with SiN mask. Photoluminescence and polarized Raman scattering measurements have been performed in the two regions of GaN growth (wing and window regions). Raman scattering results are consistent with the lateral growth of GaN in the overgrown region. We have observed second-order Raman scattering in the wing and window regions of GaN. The observations of longitudinal optical phonon plasmon modes in the overgrown region demonstrate that LEO GaN is doped. We have carried out micro-Raman mapping of the local strain and free carrier concentration in the LEO GaN. Anharmonicity due to temperature in LEO GaN has also been investigated. The anharmonicity was found to increase with increasing temperature, and such temperature-induced anharmonicity introduces changes in the linewidth and line center position of the Raman active phonons. The phonon lifetimes in GaN are estimated in the LEO region as well as in the coherently grown region (window region). © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1467952
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  • 8
    Electronic Resource
    Electronic Resource
    Latent track formation in GaAs irradiated with 20, 30, and 40 MeV fullerenes (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5853-5857 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microstructural observations of gallium arsenide single crystals irradiated with a few tens of MeV C60 incident clusters (fullerenes) were performed. Normal and grazing incidences were investigated. Similar to in the case of silicon and germanium, cylindrical amorphous tracks whose diameters vary as a function of the projectile energy were found. However, for a given energy of the clusters, the track diameters are slightly different from one material to another. Also depending on the fullerene, energy is the length of the amorphous cylinder that formed along the projectile's path. The recrystallization process under an electron beam during transmission electron microscopy observation was analyzed and a higher growth rate for gallium arsenide compared to that of germanium was seen. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1467962
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  • 9
    Electronic Resource
    Electronic Resource
    Response of silicon carbide to high velocity impact (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5858-5866 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article presents an analysis of the response of silicon carbide to high velocity impact. This includes a wide range of loading conditions that produce large strains, high strain rates, and high pressures. Experimental data from the literature are used to determine constants for the Johnson–Holmquist constitutive model for brittle materials (JH-1). It is possible to directly determine the strength and pressure response of the intact material from test data in the literature. After the ceramic has failed, however, there are not adequate experimental data to directly determine the response of the failed material. Instead, the response is inferred from a comparison of computational results to ballistic penetration test results. After the constants have been obtained for the JH-1 model, a wide range of computational results are compared to experimental data in the literature. Generally, the computational results are in good agreement with the experimental results. Included are computational results that model interface defeat, which occurs when a high velocity projectile impacts a ceramic target and then dwells on the surface of the ceramic with no significant penetration. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1468903
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  • 10
    Electronic Resource
    Electronic Resource
    Chemical origin of the yellow luminescence in GaN (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5867-5874 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of ion-beam-produced lattice defects as well as H, B, C, N, O, and Si, introduced by ion implantation, on the luminescence properties of wurtzite GaN is studied by cathodoluminescence spectroscopy. Results indicate that intrinsic lattice defects produced by ion bombardment mainly act as nonradiative recombination centers and do not give rise to the yellow luminescence (YL) of GaN. Experimental data unequivocally shows that C is involved in the defect-impurity complex responsible for YL. In addition, C-related complexes appear to act as efficient nonradiative recombination centers. Implantation of H produces a broad luminescent peak which is slightly blueshifted with respect to the C-related YL band in the case of high excitation densities. The position of this H-related YL peak exhibits a blueshift with increasing excitation density. Based on this experimental data and results reported previously, the chemical origin of the YL band is discussed. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1467605
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