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  • Springer  (173,864)
  • American Institute of Physics (AIP)  (26,481)
  • Nature Publishing Group  (15,140)
  • Public Library of Science
  • 2000-2004  (216,057)
Collection
Keywords
Publisher
Years
Year
  • 1
    Unknown
    Strategic decision making : applying the analytic hierarchy process (2004)
    London ; New York : Springer
    Decision engineering  
    Details
    Keywords: Decision making, Mathematical models. ; Decision making, Methodology.
    Pages: ix, 172 p.
    ISBN: 1-85233-864-4
    URL: http://www.netLibrary.com/urlapi.asp?action=summary&v=1&bookid=108180
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    E-Book (German National Licenses)
  • 2
    Unknown
    Web services, E-Business, and the Semantic Web : second international workshop, WES 2003, Klagenfurt, Austria, June 16-17, 2003 ; WES 2003 (2004)
    Berlin ; New York : Springer
    Lecture notes in computer science  
    Details
    Keywords: Semantic Web, Congresses.
    Pages: x, 145 p.
    ISBN: 3-540-25982-1
    URL: http://www.netLibrary.com/urlapi.asp?action=summary&v=1&bookid=130186
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  • 3
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    Unknown
    Lattice-Gas Cellular Automata and Lattice Boltzmann Models - An Introduction (2000)
    Springer
    In:  EPIC3Springer, Berlinpp. (Lecture Notes in Mathematics ; 1725) Remark (September 2002): The original edition is now out of print. A slightly revised version (compare `Errata' and `Additions' under: {http://www.awi-bremerhaven.de/Modelling/LGCA+LBM/} is availab, Berlin, Springer, 308, 308 p., ISBN: 3-540-66973-6
    Details
    Publication Date: 2019-07-17
    Description: Lattice-gas cellular automata (LGCA) and lattice Boltzmann models (LBM) are relatively new andpromising methods for the numerical solution of nonlinear partial differential equations. The bookprovides an introduction for graduate students and researchers. Working knowledge of calculus isrequired and experience in PDEs and fluid dynamics is recommended. Some peculiarities of cellularautomata are outlined in Chapter 2. The properties of various LGCA and special coding techniquesare discussed in Chapter 3. Concepts from statistical mechanics (Chapter 4) provide the necessarytheoretical background for LGCA and LBM. The properties of lattice Boltzmann models and amethod for their construction are presented in Chapter 5.
    Repository Name: EPIC Alfred Wegener Institut
    Type: Book , peerRev
    Format: application/pdf
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  • 4
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    Unknown
    Early warning systems for natural disaster reduction (2003)
    Springer
    Details
    Publication Date: 2020-02-12
    Keywords: 550 - Earth sciences
    Type: info:eu-repo/semantics/book
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  • 5
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    GPS : theory, algorithms and applications (2003)
    Springer
    Details
    Publication Date: 2020-02-12
    Keywords: 550 - Earth sciences
    Type: info:eu-repo/semantics/book
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  • 6
    Electronic Resource
    Electronic Resource
    Micro-Raman scattering in laterally epitaxial overgrown GaN (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5840-5852 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study, micro-Raman spectroscopy has been used to investigate the vibrational properties of laterally epitaxial overgrown (LEO) GaN. The LEO GaN films were grown by metal organic chemical vapor deposition on a 2 in. sapphire substrate with SiN mask. Photoluminescence and polarized Raman scattering measurements have been performed in the two regions of GaN growth (wing and window regions). Raman scattering results are consistent with the lateral growth of GaN in the overgrown region. We have observed second-order Raman scattering in the wing and window regions of GaN. The observations of longitudinal optical phonon plasmon modes in the overgrown region demonstrate that LEO GaN is doped. We have carried out micro-Raman mapping of the local strain and free carrier concentration in the LEO GaN. Anharmonicity due to temperature in LEO GaN has also been investigated. The anharmonicity was found to increase with increasing temperature, and such temperature-induced anharmonicity introduces changes in the linewidth and line center position of the Raman active phonons. The phonon lifetimes in GaN are estimated in the LEO region as well as in the coherently grown region (window region). © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1467952
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  • 7
    Electronic Resource
    Electronic Resource
    Latent track formation in GaAs irradiated with 20, 30, and 40 MeV fullerenes (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5853-5857 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microstructural observations of gallium arsenide single crystals irradiated with a few tens of MeV C60 incident clusters (fullerenes) were performed. Normal and grazing incidences were investigated. Similar to in the case of silicon and germanium, cylindrical amorphous tracks whose diameters vary as a function of the projectile energy were found. However, for a given energy of the clusters, the track diameters are slightly different from one material to another. Also depending on the fullerene, energy is the length of the amorphous cylinder that formed along the projectile's path. The recrystallization process under an electron beam during transmission electron microscopy observation was analyzed and a higher growth rate for gallium arsenide compared to that of germanium was seen. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1467962
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  • 8
    Electronic Resource
    Electronic Resource
    Response of silicon carbide to high velocity impact (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5858-5866 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article presents an analysis of the response of silicon carbide to high velocity impact. This includes a wide range of loading conditions that produce large strains, high strain rates, and high pressures. Experimental data from the literature are used to determine constants for the Johnson–Holmquist constitutive model for brittle materials (JH-1). It is possible to directly determine the strength and pressure response of the intact material from test data in the literature. After the ceramic has failed, however, there are not adequate experimental data to directly determine the response of the failed material. Instead, the response is inferred from a comparison of computational results to ballistic penetration test results. After the constants have been obtained for the JH-1 model, a wide range of computational results are compared to experimental data in the literature. Generally, the computational results are in good agreement with the experimental results. Included are computational results that model interface defeat, which occurs when a high velocity projectile impacts a ceramic target and then dwells on the surface of the ceramic with no significant penetration. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1468903
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  • 9
    Electronic Resource
    Electronic Resource
    Chemical origin of the yellow luminescence in GaN (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5867-5874 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of ion-beam-produced lattice defects as well as H, B, C, N, O, and Si, introduced by ion implantation, on the luminescence properties of wurtzite GaN is studied by cathodoluminescence spectroscopy. Results indicate that intrinsic lattice defects produced by ion bombardment mainly act as nonradiative recombination centers and do not give rise to the yellow luminescence (YL) of GaN. Experimental data unequivocally shows that C is involved in the defect-impurity complex responsible for YL. In addition, C-related complexes appear to act as efficient nonradiative recombination centers. Implantation of H produces a broad luminescent peak which is slightly blueshifted with respect to the C-related YL band in the case of high excitation densities. The position of this H-related YL peak exhibits a blueshift with increasing excitation density. Based on this experimental data and results reported previously, the chemical origin of the YL band is discussed. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1467605
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  • 10
    Electronic Resource
    Electronic Resource
    Effect of growth temperature on strain barrier for metalorganic vapor phase epitaxy grown strained InGaAs quantum well with lattice matched InGaAsP barriers (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5875-5881 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InGaAs strained quantum well (SQW) samples with lattice matched InGaAsP quaternary barriers are grown on GaAs substrates by metalorganic vapor phase epitaxy. These SQW samples are characterized using photoluminescence, photomodulated reflectance, surface photovoltage spectroscopy and high-resolution x-ray diffraction techniques. The results based on numerical calculations are used to identify the various transitions seen in the spectra. The effect of growth temperature on the indium content of the InGaAs SQW with lattice matched InGaAsP quaternary barriers is studied. Contrary to the reported higher value of indium incorporation in InGaAs SQW with GaAs (In-free) barriers when the growth is performed at low temperatures, we find that the indium content of the InGaAs SQW with InGaAsP (In-based) quaternary barriers decreases if the SQW is grown at lower growth temperatures. A possible explanation for this behavior is provided. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1464210
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