ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Articles  (7)
  • MOCVD  (7)
  • Wiley-Blackwell  (7)
  • American Meteorological Society
  • PANGAEA
  • 2000-2004
  • 1995-1999  (7)
  • Electrical Engineering, Measurement and Control Technology  (7)
  • Geosciences
  • 1
    Electronic Resource
    Electronic Resource
    The single-molecule approach to the deposition of compound semiconducting materials by MOCVD and related methodsBased on a lecture presented at IWMP-4 Fourth International Workshop on Purification of Materials for Crystal Growth and Glass Processing, Bristol, September 1993. (1995)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 5 (1995), S. 117-134 
    Details
    ISSN: 1057-9257
    Keywords: MOCVD ; precursors ; CdS ; ZnS ; GaAs ; InP ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The last 10 years have seen a number of chemists begin to take a serious interest in the deposition of materials such as compound semiconductors. Chemical deposition routes have a number of potential advantages, many of which arise from the fact that growth can take place well away from equilibrium. Chemists are particularly attracted by the idea that a volatile single molecule can deliver the elements of a compound semiconductor to the reaction site. In the present article recent advances in the deposition of compound semiconductors, principally II/VI (12/16) or III/V (13/15) materials, from single-molecule precursors will be reviewed. The chemistry of these precursors will be discussed in terms of both their synthesis and properties and the effect of the mechanism of their decomposition on the quality of deposited material.
    Additional Material: 16 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860050208
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Progress in molecular precursors for electronic materialsPlenary talk given at the Research Opportunities in Photochemical Sciences Workshop sponsored by the United States Department of Energy and organized by the United States National Renewable Energy Laboratory in Estes Park, Colorado, U.S.A., 5-8 February 1996. (1996)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 6 (1996), S. 175-184 
    Details
    ISSN: 1057-9257
    Keywords: precursors ; photovoltaics ; MOCVD ; semiconductors ; superconductors ; metastable ; quantum dots ; nanocrystalline ; crystal growth ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Molecular-precursor chemistry provides an essential underpinning to all electronic materials technologies, including photovoltaics and related areas of direct interest to energy capture and conversion. Materials synthesis and processing is a rapidly developing field in which advances in molecular precursors are playing a major role. This article surveys selected recent research examples that define the exciting current directions in molecular precursor science. These directions include growth of increasingly complex structures and stoichiometries, surface-selective growth, kinetic growth of metastable materials, growth of size-controlled quantum dots and quantum dot arrays and growth at progressively lower temperatures. Continued progress in molecular precursor chemistry will afford precise control over the crystal structures, nanostructures and microstructures of electronic materials.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
  • 3
    Electronic Resource
    Electronic Resource
    Deposition of cadmium sulphide thin films from the single-source precursor bis(diethylmonothiocarbamato)cadmium(II) by low-pressure metalorganic chemical vapour deposition (1997)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 7 (1997), S. 311-316 
    Details
    ISSN: 1057-9257
    Keywords: monothiocarbamate ; MOCVD ; cadmium sulphide ; precursor ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Thin films of CdS were grown by low-pressure metalorganic chemical vapour deposition (LP-MOCVD, 10-2 Torr) on GaAs(100) and borosilicate glass using the novel single-source precursor bis(diethylmonothiocarbamato)cadmium(II). The deposition of CdS was observed at substrate temperatures of 300 °C and above. Uniform adherent films of CdS were grown on GaAs(100) at temperatures between 350 and 450°C. CdS films deposited on glass were generally transparent with small crystallites (∽50 nm). Films were characterised by X-ray diffraction and scanning electron microscopy and shown to be of hexagonal phase. A band gap of 2.39 eV was measured for the films of CdS. © 1997 John Wiley & Sons, Ltd.
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
  • 4
    Electronic Resource
    Electronic Resource
    Vapour Pressure Studies of Some Nitrogen Donor Adducts of Dimethylzinc Used in the Deposition of Materials by MOCVD (1997)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 7 (1997), S. 117-121 
    Details
    ISSN: 1057-9257
    Keywords: precursor ; MOCVD ; vapour pressure ; adduct ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The vapour pressures of mixtures of dimethylzinc with triethylamine (1), 1,3,5-trimethyl- (2) and 1,3,5-triethylhexahydro-1,3,5-triazine (3) have been studied using static measurement at various mole ratios of ligand to alkyl at 0°C. The results obtained are useful in assessing the suitability of these compounds as precursors for the deposition of group-12-containing materials by MOCVD. © 1997 John Wiley & Sons, Ltd.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
  • 5
    Electronic Resource
    Electronic Resource
    Photoreflectance characterisation of GaAs and GaAs/GaAIAs structures grown by MOCVD (1995)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 5 (1995), S. 321-327 
    Details
    ISSN: 1057-9257
    Keywords: photoreflectance spectroscopy ; MOCVD ; GaAs ; GaAIAs ; heterostructures ; quantum wells ; surface ; interface ; Kramers-Kronig analysis ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Epitaxial undoped and doped (Si and Zn) GaAs and GaAIAs layers as well as heterostructures of GaAs/GaAIAs have been grown in an atmospheric pressure, vertical MOCVD system. Room temperature photoreflectance (PR) has been applied to characterise the layers and heterostructures as well as multiple quantum wells. The surface- and interface-related PR has been studied by application of Kramers-Kronig analysis. A decomposition of the PR spectrum into spectra connected with the surface region and with the interface has been proposed.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860050605
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Low-temperature metalorganic chemical vapour deposition of AlN for surface passivation of GaAs (1996)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 6 (1996), S. 127-134 
    Details
    ISSN: 1057-9257
    Keywords: aluminium nitride ; metalorganic chemical vapour deposition ; MOCVD ; gallium arsenide ; surface passivation ; insulating films ; thin films ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Aluminium nitride (AlN) thin films have been grown by low-temperature metalorganic chemical vapour deposition (MOCVD) to passivate GaAs. By utilizing hydrazine (N2H4), highly resistive amorphous-like AlN films were obtained at growth temperatures around 400°C. At the AlN-GaAs interface, three deep trap levels were found: 0.6 eV (DL1) and 0.9 eV (DL2) below the conduction band minimum and 0.5 eV (DL3) above the valence band maximum. The number of DL1 levels was reduced by preparing As-dimer-stabilised surfaces of GaAs. The capture cross-sections and time constants of DL1-DL3 suggest that these levels originated from point defects, not from precipitates or disorder. Neither precipitation nor reaction was detectable by Auger electron spectroscopy after annealing at 900°C for 20 min, indicating that the AlN-GaAs interfaces are thermally stable. These results demonstrate that these AlN films are applicable as capping films for processing GaAs as well as passivation films.
    Additional Material: 13 Ill.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
  • 7
    Electronic Resource
    Electronic Resource
    Alternative precursor systems for the MOCVD of aluminium nitride and gallium nitride (1996)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 6 (1996), S. 119-126 
    Details
    ISSN: 1057-9257
    Keywords: MOCVD ; aluminium nitride ; gallium nitride ; epitaxy ; alternative precursors ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Two alternative precursor systems have been investigated for the growth of AlN and GaN by MOCVD. The first involved the reaction between Me3M (M(DOUBLE BOND)Al, Ga) and tert-butylamine (tBuNH2), whilst the second route involved the pyrolysis of single-source precursors such as Me3M(NH3) (M(DOUBLE BOND)Al, Ga) and [Me2Ga(NH2)]3. Both routes proved suitable for the deposition of AlN thin films, and epitaxial AlN layers have been deposited on sapphire (0001) from Me3Al(NH3) without any added NH3. Attempts to grow GaN from Me3Ga/tBuNH2 mixtures or Me3Ga(NH3) were unsuccessful, leading to the deposition of Ga droplets, although GaN films containing a large excess of Ga were deposited by low-pressure MOCVD from the single-source precursor [Me2Ga(NH2)]3.
    Additional Material: 1 Ill.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...