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  • Articles  (4)
  • CdS  (4)
  • Wiley-Blackwell  (4)
  • American Meteorological Society
  • PANGAEA
  • 2000-2004
  • 1995-1999  (4)
  • Electrical Engineering, Measurement and Control Technology  (4)
  • Geosciences
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  • Articles  (4)
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  • Wiley-Blackwell  (4)
  • American Meteorological Society
  • PANGAEA
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  • Electrical Engineering, Measurement and Control Technology  (4)
  • Geosciences
  • Physics  (4)
  • 1
    Electronic Resource
    Electronic Resource
    The single-molecule approach to the deposition of compound semiconducting materials by MOCVD and related methodsBased on a lecture presented at IWMP-4 Fourth International Workshop on Purification of Materials for Crystal Growth and Glass Processing, Bristol, September 1993. (1995)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 5 (1995), S. 117-134 
    Details
    ISSN: 1057-9257
    Keywords: MOCVD ; precursors ; CdS ; ZnS ; GaAs ; InP ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The last 10 years have seen a number of chemists begin to take a serious interest in the deposition of materials such as compound semiconductors. Chemical deposition routes have a number of potential advantages, many of which arise from the fact that growth can take place well away from equilibrium. Chemists are particularly attracted by the idea that a volatile single molecule can deliver the elements of a compound semiconductor to the reaction site. In the present article recent advances in the deposition of compound semiconductors, principally II/VI (12/16) or III/V (13/15) materials, from single-molecule precursors will be reviewed. The chemistry of these precursors will be discussed in terms of both their synthesis and properties and the effect of the mechanism of their decomposition on the quality of deposited material.
    Additional Material: 16 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860050208
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    ZnCdS films for solar cell and photodetector applications deposited by In Situ chemical doping of CdS with Zn (1995)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 5 (1995), S. 269-275 
    Details
    ISSN: 1057-9257
    Keywords: ZnCdS ; CdS ; ZnS ; photodetector ; chemical doping ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: ZnCdS films were formed by in situ chemical doping of CdS with Zn in a chemical bath. The X-ray diffraction (XRD) patterns of CdS films after Zn doping showed a more disordered nature, consisting of reflections from Zn0.049Cd0.951S (JCPDS 40-834) as well as CdS greenockite (hexagonal, JCPDS 41-1049) and hawleyite (cubic, JCPDS 10-0454) phases. A comparison of the optical transmittance spectra for undoped and Zn-doped films showed that the cut-off wavelength was modified after Zn doping, indicating the presence of impurity states in the band gap. Zn-doped films showed an increase in dark conductivity after annealing at about 200°C. These films exhibit promising characteristics for application in solar cell and photodetector structures.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860050505
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  • 3
    Electronic Resource
    Electronic Resource
    Synthesis and characterisation of nanometre-sized CdS clusters in chitosan film (1996)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 6 (1996), S. 197-202 
    Details
    ISSN: 1057-9257
    Keywords: CdS ; nanometer-sized clusters ; chitosan ; complexes ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: A novel process using chitosan containing ligand groups as a medium for forming CdS clusters in chitosan films by an ion co-ordinate method has been investigated. The CdS clusters in the chitosan have been identified by X-ray diffraction and by their infrared, ultraviolet and visible absorption spectra and shown to possess high stability with a specific structure. Notable quantum size effects have been shown through their absorption spectra. By changing the reaction conditions, the wavelength edge of the absorption can be blue-shifted from 470 to 375 nm.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Growth modes of solution-grown CdS thin films (1995)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 5 (1995), S. 11-17 
    Details
    ISSN: 1057-9257
    Keywords: CdS ; chemical deposition ; complexing agent ; sulfurising agent ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The growth modes of CdS thin films on glass in a chemical bath were analysed using scanning electron microscopy and optical microscopy. The results of these studies show that the film growth occurs by ion-by-ion condensation and by colloidal particles of CdS adhering to the substrate. Both mechanisms are operative from the initial stages of film growth. The predominance of one or other of these two growth modes depends on the abundance of Cd and S ions present in the solution, which is determined by the amount of complexing and sulphurising agents and ammonia used for the controlled release of Cd and S ions into the solution. The growth mode influences the optical properties of the films.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860050104
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