ISSN:
0948-1907
Schlagwort(e):
Polycrystalline diamond
;
Microwave CVD
;
Stress
;
X-ray diffraction
;
Chemistry
;
Polymer and Materials Science
Quelle:
Wiley InterScience Backfile Collection 1832-2000
Thema:
Chemie und Pharmazie
,
Maschinenbau
Notizen:
Residual stress in polycrystalline diamond films has been studied. Uniform polycrystalline diamond films were deposited on 3.0 in. diameter silicon substrates in a microwave plasma chemical vapor deposition (MPCVD) system. The effects of CH4/H2 ratio, pressure, and power variation on film stress were investigated. The macro-stress, or uniform stress, in the films was measured using the X-ray diffraction (XRD) d-sin2ψ technique. In general, 〈220〉-oriented films exhibited tensile stress and 〈111〉-oriented films were in compression. The micro-stress, or non-uniform stress, calculated from diffraction peak broadening, was observed to be tensile for all samples. Films of relatively small grain size and 〈220〉 orientation showed both the highest micro-stress and the highest macro-stress. Film morphology was analyzed using scanning electron microscopy (SEM) and atomic force microscopy (AFM), while the film texture was studied using XRD. Significant non-diamond carbon was incorporated in 〈220〉-oriented diamond as estimated from the intensity of the broad 1580 cm-1 peak in the Raman spectra. Much less non-diamond carbon was detected in 〈111〉-oriented diamond films. Good correlation between film morphology and measured stress was observed.
Zusätzliches Material:
6 Ill.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1002/cvde.19970030304
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