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  • Articles  (18)
  • 73.60  (18)
  • Springer  (18)
  • Annual Reviews
  • PANGAEA
  • 2005-2009
  • 1980-1984  (18)
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (18)
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  • Articles  (18)
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  • Springer  (18)
  • Annual Reviews
  • PANGAEA
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (18)
  • Physics  (18)
  • 1
    Electronic Resource
    Electronic Resource
    A study of built-in potential ina-Si solar cells by means of back-surface reflected electroabsorption (1983)
    Springer
    Applied physics 32 (1983), S. 31-38 
    Details
    ISSN: 1432-0630
    Keywords: 86.30 ; 72.40 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electroreflectance (ER) signal has been studied for the purpose of identifying the built-in field in practical amorphous silicon (a-Si∶H) solar cells. Through both theoretical and experimental considerations, it has been confirmed that the ER signal essentially comes from the light which is reflected at the back surface and hence experiences the internal electric field within thea-Si∶H layer. By analyzing the ER signal, which is really the back-surface reflected electroabsorption signal, the built-in potentialV bcan be evaluated. This method has been applied to various types ofp-i-n junctiona-Si solar cells.V bof a usual homojunction solar cell was about 0.85 V. Increases ofV bby 50≈130mV have been found in heterojunction solar cells constructed withp-type amorphous silicon carbide (a-SiC∶H) and/orn-type microcrystalline silicon (μc-Si) as compared with homojunctionp-i-n solar cells. Moreover, a clear dependence ofV bon the substrate materials has been observed. These experimental results are described in connection with cell performances.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00626131
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  • 2
    Electronic Resource
    Electronic Resource
    Kinetic limitations to surface segregation during MBE growth of III–V compounds: Sn in GaAs (1984)
    Springer
    Applied physics 33 (1984), S. 87-92 
    Details
    ISSN: 1432-0630
    Keywords: 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The incorporation of Sn as a dopant in GaAs has been studied in the temperature range of 500°–650° C, over a wide range of Ga and As fluxes, the latter being incident as either As4 or As2 molecules. The results are explained in terms of a surface segregation model in which the behaviour at high growth temperatures (above ∼600 °C) approaches thermal equilibrium, but growth at lower temperatures involves a kinetic limitation to the segregation process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617613
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  • 3
    Electronic Resource
    Electronic Resource
    Ion-beam mixing kinetics of Fe-Al multilayers studied by in situ electrical resistivity measurements (1984)
    Springer
    Applied physics 33 (1984), S. 77-82 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 72.15 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The ion-beam mixing of Fe-Al evaporated multiple-layer films has been investigated by measuring continuously the electrical resistivity of the samples during the bombardment. The experimental curves exhibit a tendency toward a saturation process and allow the determination of the critical dose corresponding to the total mixing of the multiple-layer film. The variations of the volume fraction of intermixed atoms as a function of the ion dose have been deduced and a semi-empirical model is proposed to explain the observed kinetics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617611
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  • 4
    Electronic Resource
    Electronic Resource
    Formation of a metallic layer from individual atoms (1984)
    Springer
    Applied physics 33 (1984), S. 213-225 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Adsorption of copper, gold and beryllium on (110), (100), and (211) single-crystal planes of tungsten leads to essentially different work-function changes. It is known from numerous investigations of alkali-metal adsorption on metal substrates that the work-function variation reflects the electronic processes occurring during the formation of the adlayer. It is obvious that copper, gold and beryllium adsorption is accompanied by a wide variety of physical processes different from those appearing in alkali-metal adsorption. The existing experimental data concerning work-function changes induced by copper, gold and beryllium adsorption are compiled. A model is developed, which may explain these changes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614661
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  • 5
    Electronic Resource
    Electronic Resource
    On the annealing behaviour of the Staebler-Wronski effect ina-Si:H (1984)
    Springer
    Applied physics 35 (1984), S. 9-12 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The kinetics of the Staebler-Wronski effect ina-Si:H were investigated experimentally. The rate of recovery from the illuminated state B to the annealed state A was observed at various temperatures in undoped,n- andp-dopeda-Si:H. The data can be characterized by a thermally activated relaxation time with an activation energy decreasing with increasing doping concentration. The results are compared with previous data and existing models.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620293
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  • 6
    Electronic Resource
    Electronic Resource
    Electron mobility in compensated VPE GaAs films (1980)
    Springer
    Applied physics 23 (1980), S. 37-40 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 73.60 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Electron Hall mobilities were measured on a series of intentionally compensated vapor phase epitaxy (VPE) GaAs layers. Using Sn and Zn as dopants, compensation ratiosK=(ND+NA)/(ND-NA) as high as 50 were obtained. Already for samples with the lowestK values the 300 K mobilities are higher than the 77 K values. In the range 20〈T〈100 [K] the data may be represented by μ∼T α with α increasing from 0.6 to 1.1 with compensation. The experimental μ values are smaller than those predicted from current models in all cases. It appears that scattering at ionized impurities is the dominant process also at temperatures well above 77 K, and that this scattering process is quantitatively underestimated in current models.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00899568
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  • 7
    Electronic Resource
    Electronic Resource
    Far-infrared donor spectroscopy of MBE-GaAs (1984)
    Springer
    Applied physics 33 (1984), S. 83-85 
    Details
    ISSN: 1432-0630
    Keywords: 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Magneto-optical spectra of shallow donors in MBE-GaAs were measured in the far-infrared using Fourier transform spectroscopy. In the purest sample (N I=9×1014cm−3) silicon was observed to be the dominating donor impurity. In a less pure sample sulfur was observed to dominate. The increase of the purity and the elimination of the sulfur contamination was correlated with the change from water cooling to liquid nitrogen cooling of the cooling shrouds around the effusion cells. An increase of the growth temperature was probably also one reason for the increase of the purity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617612
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  • 8
    Electronic Resource
    Electronic Resource
    Attenuation length of monoenergetic electrons photoinjected into the NaCl layer (1984)
    Springer
    Applied physics 34 (1984), S. 67-68 
    Details
    ISSN: 1432-0630
    Keywords: 79.40 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A new, precise photoelectric method of electron attenuation length measurement in alkali halides is proposed and experimentally verified. The obtained results confirm the Llacer-Garwin theory of electron-phonon interactions in these substances.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617576
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  • 9
    Electronic Resource
    Electronic Resource
    Dependence of properties of hydrogenated microcrystalline and amorphous silicon films prepared by planar magnetron sputtering in inert gas (1984)
    Springer
    Applied physics 35 (1984), S. 241-247 
    Details
    ISSN: 1432-0630
    Keywords: 72.40 ; 73.60 ; 78.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Microcrystalline and amorphous hydrogenated silicon films were preparaed by rf planar magnetron sputtering in the four kinds of inert gas, i.e., He, Ne, Ar, and Kr. The dependence of such properties as x-ray diffraction, ir spectra, absorption coefficient, hydrogen content, dark conductivity and photoconductivity on the kind of inert gas was investigated. Such deposition conditions as hydrogen partial pressure, sputtering pressure and rf power were also studied mainly in relation to the microcrystallization of the films. Microcrystalline films with noticeably high deposition rate could be obtained in the case of Kr and Ar, compared to the case of He and Ne. Hydrogen concentration was found to correlate to the photoconductivity and activation energy of dark conductivity except for the case of He. Photosensitivity was appreciably larger for amorphous film than for microcrystalline one. Especially in the case of Kr, it was considerably larger than in other cases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617174
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  • 10
    Electronic Resource
    Electronic Resource
    Controlled doping of rf sputtered germanium films (1984)
    Springer
    Applied physics 34 (1984), S. 117-121 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Germanium films have been rf sputter deposited on a variety of substrates. A new techniques has been developed to control doping concentrations of the films at predetermined levels for bothp-type as well asn-type films. The hole concentrations of these films could be varied from 1015 to 2×1018/cm3 while the electron concentrations could be varied from 1015 to 5×1017/cm3 using this technique. Transmission electron microscope studies have been made to study the crystalline quality of the films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614763
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  • 11
    Electronic Resource
    Electronic Resource
    Nucleation effects during MBE growth of Sn-Doped GaAs (1982)
    Springer
    Applied physics 28 (1982), S. 63-71 
    Details
    ISSN: 1432-0630
    Keywords: 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The morphology, structure and composition of Sn films on GaAs substrates have been investigated in relation to the predeposition technique used with Sn doping of MBE-grown GaAs films. It has been shown that 3-D aggregates of Sn are formed and a similar morphology has been identified in the Sn which accumulates at the surface of all Sn-doped GaAs films. The way in which this relates to donor incorporation is considered and a simple model of incorporation kinetics proposed which is shown to be consistent with observation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617784
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  • 12
    Electronic Resource
    Electronic Resource
    Al reaction with SiO2 an auger electron spectroscopy and energy loss spectroscopy study (1982)
    Springer
    Applied physics 28 (1982), S. 247-250 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60 ; 79.20 ; 82.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Evidence for a reaction between aluminium and SiO2 film is presented using Auger electron spectroscopy (AES) and low-energy electron-loss spectroscopy (ELS) techniques. This reaction is studied “in situ” during the manufacture of metal insulator semiconductor devices (MIS), under ultra-high vacuum conditions (UHV). A reduction of the SiO2 film upon aluminization occurs, even at room temperature, giving rise to a complex interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618702
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  • 13
    Electronic Resource
    Electronic Resource
    Effect of size quantization on the Einstein relation in ultrathin films of non-parabolic semiconductors (1981)
    Springer
    Applied physics 26 (1981), S. 165-169 
    Details
    ISSN: 1432-0630
    Keywords: 73.60 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An attempt is made to investigate the effect of size quantization on the diffusivity-mobility ratio of the carriers in ultrathin films of semiconductors having Kane-type nonparabolic energy bands. It is shown, takingn-type InSb as an example, that the ratio oscillates both with increasing film thickness and with increasing carrier concentration under degenerate conditions and remains unaffected otherwise. The corresponding results for parabolic semiconductors are also obtained from the expressions derived.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614751
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  • 14
    Electronic Resource
    Electronic Resource
    Silicon doping of MBE-grown GaAs films (1983)
    Springer
    Applied physics 32 (1983), S. 195-200 
    Details
    ISSN: 1432-0630
    Keywords: 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Two concentration ranges of silicon doping in MBE-grown GaAs films have been investigated in some detail. In lightly doped films, with a free-electron concentration of ≈1016cm−3, low-temperature photoluminescence spectra have been analysed to develop a model to account for spectral features previously attributed to Ge and Si acceptor levels. In heavily doped films, a maximum free-electron concentration of ≈7×1018 cm−3 has been obtained, which is only rather weakly dependent on growth conditions and the nature of the arsenic species (As2 or As4). Transmission electron microscopy has shown that no significant precipitation effects occur when higher Si fluxes are used but there is evidence for autocompensation. The maximum PL intensity (300 K) is found at a lower free electron concentration then with Sn-doped films, and is more sharply peaked, but there is no evidence for an anomalous Moss-Burstein shift.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00820260
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  • 15
    Electronic Resource
    Electronic Resource
    Hall mobility of evaporated InAs films prepared at different temperatures (1984)
    Springer
    Applied physics 34 (1984), S. 69-71 
    Details
    ISSN: 1432-0630
    Keywords: 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The behaviour of the Hall mobilityμ H and the carrier concentrationn have been investigated on InAs films as a function of thickness, substrate temperature and annealing treatment. While the Hall mobility showed an increasing trend with substrate temperature and thickness for both as-deposited and annealed films, the carrier concentration for asdeposited films showed a maximum at a particular substrate temperature range while that for annealed films showed a monotonous decreasing behaviour.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617577
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  • 16
    Electronic Resource
    Electronic Resource
    A GaAs MISFET with Ge3N4 gate dielectric (1982)
    Springer
    Applied physics 28 (1982), S. 123-124 
    Details
    ISSN: 1432-0630
    Keywords: 85.30 ; 81.10 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract GaAs MIS field effect transistors with a Ge3N4 dielectric gate have been investigated. No hysteresis loop and drain current drift has been observed in theI D -V Dcharacteristics. However, performance of the devices have been found to be limited by the contact resistance. FromI DS 1/2 -V G plot, the threshold voltage and effective channel mobility of the transistor have been obtained as -4.5V and 2800cm2v−1s−1, respectively. A maximum dc transconductance of 68 mS/mm of gate width has been achieved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617142
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  • 17
    Electronic Resource
    Electronic Resource
    The effect of gas adsorption on the electrical resistivity of thin silver films (1984)
    Springer
    Applied physics 35 (1984), S. 13-17 
    Details
    ISSN: 1432-0630
    Keywords: 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Silver films in the thickness range 20–60 nm deposited on glass substrates in UHV conditions were covered stepwise with oxygen, carbon monoxide and ethylene at 77 K. Resistivity was measured in situ. The evaluation of the thickness dependence of resistivity on the basis of a scattering hypothesis leads to scattering cross sections decreasing from O2 to CO and C2H4. The results are explained by considering the energetic structure of the broadened molecular orbitals of the adsorbates near the Fermi level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620294
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  • 18
    Electronic Resource
    Electronic Resource
    Changes produced in the electrical resistivity of ErH2 thin films when converted to ErH3 due to hydrogen treatment (1984)
    Springer
    Applied physics 35 (1984), S. 263-265 
    Details
    ISSN: 1432-0630
    Keywords: 73.60 ; 68.55 ; 81.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The resistivity of thin films (80–200 Å) of ErH2 increases sharply when heated for 2 h at 300 °C in vacuum in the presence of hydrogen gas at ∼ 10−2 Torr. This confirms that the films, originally metallic conductor, have become converted to semiconducting ErH3 which is in conformity with the structural studies. The negative values of TCR also indicate the semiconducting nature of the hydrogen treated films. Activation energies of the films have been evaluated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617177
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