ISSN:
1551-2916
Source:
Blackwell Publishing Journal Backfiles 1879-2005
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
X-ray diffraction (XRD) patterns from nominally β-SiC specimens often differ from those expected for the cubic crystal structure. These differences include the presence of additional peaks, enhanced background intensities, peak broadening, changes in relative peak heights, and shifts in peak positions. It has long been recognized that they are due to the presence of stacking faults, and models relating the experimental observations to stacking fault population have continued to evolve. The presence and relative magnitude of these features vary among different β-SiC specimens. In this work, computer simulations were used to show that the variations are closely related to differences in the type and spatial distribution of stacking faults in each specimen. In these simulations, stacking sequences were generated using a selectively activated 1-D Ising model with a Boltzmann-type probability function for specifying errors, which allows a wide variety of fault configurations to be generated. Direct correlations between different features in the XRD data to the underlying fault population are demonstrated, which are discussed in this paper. It is also shown that this computer model is general, in the sense that many of the models presented in prior work can be interpreted as limiting cases of it.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1111/j.1151-2916.1997.tb03034.x
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