ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Articles  (16)
  • Plasma etching  (16)
  • 2010-2014
  • 1990-1994  (6)
  • 1985-1989  (10)
  • 1950-1954
  • Technology  (16)
  • History
  • Electrical Engineering, Measurement and Control Technology
Collection
  • Articles  (16)
Source
Keywords
Publisher
Years
Year
Topic
  • 1
    Electronic Resource
    Electronic Resource
    Low-temperature dry etching of tungsten, dielectric, and trilevel resist layers on GaAs (1994)
    Springer
    Plasma chemistry and plasma processing 14 (1994), S. 505-522 
    Details
    ISSN: 1572-8986
    Keywords: Plasma etching ; GaAs devices ; low temperature
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Dry etching of common masking materials used in GaAs device technology, was examined down to temperatures of −30°C. The etch rates of SiNx, SiO2, and W in SF6/Ar are reduced below 0°C, but the anisotropy of the etching is improved at low temperature. Microwave enhancement of the SF6/Ar discharges produces increases in etch rates of several times at 25°C, but much lower increases at −30°C substrate temperature. The underlying GaAs surface shows increased S and F coverage after low-temperature etching, but these species are readily removerd either by anex-situ wet chemical cleaning step or an in-situ H2 plasma exposure. Photoresist etching is less sensitive to temperature, and anisotropic profiles are produced between −30 and +60°C in pure O2 discharges.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01570209
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Dry etching characteristics of III–V semiconductors in microwave BCl3 discharges (1993)
    Springer
    Plasma chemistry and plasma processing 13 (1993), S. 311-332 
    Details
    ISSN: 1572-8986
    Keywords: Plasma etching ; electron cyclotron resonance ; discharges in BCl3 ; additional RF biasing ; selectivities
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Electron cyclotron resonance (ECR) BCl3 discharges with additional rf biasing of the sample position have been used to etch a variety of III–V semiconductors. GaAs and AlxGa1−xAs (x = 0−1) etch at equal rates in BCl3 or BCl3/Ar discharges, whereas SF6 addition produces high selectivities for etching GaAs over AlGaAs. These selectivities are in excess of 600 for dc biases of ≤−150 V, and fall to ≤6 for biases of −300 V. If the dc biases are kept to ≤ − 100 V, there is no measurable degradation of the optical properties of the GaAs and AlGaAs. The AlF3 formed on the AlGaAs surface during exposure to BCl3/SF6 plasmas can be removed by sequential rinsing in dilute NH4OH and water. In-based materials (InP, InAs, InSb, InGaAs) etch at slow rates with relatively rough morphologies in BCl3 plasmas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01466047
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Characteristics of vinyl iodide microwave plasma etching of GaAs/AlGaAs and InP/InGaAs heterostructures (1993)
    Springer
    Plasma chemistry and plasma processing 13 (1993), S. 333-350 
    Details
    ISSN: 1572-8986
    Keywords: Plasma etching ; microwave discharges ; electron spectroscopy for chemical analysis ; addition of H2 and Ar
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Vinyl iodide (C2H3I) microwave discharges with additions of H2 and Ar are found to provide faster etch rates than conventional CH4/H2/Ar discharges for InP, InGaAs, GaAs, and AlGaAs. This is a result of the relatively high volatilities of indium, gallium, and aluminum iodide species. The etched features are smooth and anisotropic over a wide range of do self-biases (−150 to −350 V), process pressures (1–20mTorr), and microwave powers (150–500 W). The polymer that forms on the mask during the plasma exposure can be readily removed in O2 discharges. Electron spectroscopy for chemical analysis (ESCA) showed that the etched surfaces are slightly deficient in the group V elements under most conditions, but changes to the optical properties of the semiconductors are minimal. No defects are visible by transmission electron microscopy (TEM) in GaAs or InP samples etched at dc biases ≤ −250 V.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01466048
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Rate constants for the etching of gallium arsenide by atomic chlorine (1991)
    Springer
    Plasma chemistry and plasma processing 11 (1991), S. 311-321 
    Details
    ISSN: 1572-8986
    Keywords: Plasma etching ; rate constants ; experimental
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Known chlorine atom concentrations were prepared in a discharge flow system and used to etch the (100) face of a gallium arsenide single crystal. The etch rate was monitored by mass spectrometry, laser interferometry, and surface proftlometry. In the temperature range from 90 to 160°C the reaction can be described by the rate law $$Etch rate = kP_{Cl} $$ where $$k = 9 \times 10^{(6 \pm 0.5)} \mu m min^{ - 1} Torr^{ - 1} e^{ - 9 \pm 1)kcal/RT} $$
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01447249
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Use of CF3,Br/Al, discharges for reactive ion etching of III-V semiconductors (1991)
    Springer
    Plasma chemistry and plasma processing 11 (1991), S. 295-310 
    Details
    ISSN: 1572-8986
    Keywords: Plasma etching ; semiconductors ; experimental
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The reactive ion etching of GaAs, InP, InGaAs, and InAlAs in CF3Br/Ar discharges was investigated as a function of both plasma power density (0.56-1.3 W - cm−2) and total pressure (10-40 mTorr) The etch rate of GaAs in 19CF3Br:1Ar discharges at 10 m Torr increases linearly with power density, from 600 Å min−1 at 0.56 W · cm−2, to 1550 Å · min at 1.3 W · cm−2. The in-based materials show linear increases in etch rates only for power densities above − 1.0 W · cm−2. These etch rates are comparable to those obtained with CCI2F2:O2 mixtures under the same conditions. Smooth surface morphologies and vertical sidewalls are obtained over a wide range of plasma parameters. Reductions in the near-surface carrier concentration in n-type GaAs are evident for etching with power densities of 〉0.8 W cm−2, due to the introduction of deep level trapping centers. At 1.3 W· cm−2, the Schottky barrier height of TiPtAu contacts on GaAs is reduced from 0.74 to 0.53 eV as a result of this damage, and the photoluminescent intensity from the material is degraded. Alter RIE, we detect the presence of both F and Br on the surface of all of the semiconductors. This contamination is worse than with CCl2F2-based mixtures. High-power etching with CF3Br/Ar together with Al-containing electrodes can lead to the presence of a substantial layer of aluminum oxide on the samples if the moisture content in the reactor is appreciable.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01447248
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    A model for the etching of silicon in SF6/O2 plasmas (1990)
    Springer
    Plasma chemistry and plasma processing 10 (1990), S. 207-229 
    Details
    ISSN: 1572-8986
    Keywords: Plasma etching ; modeling ; SF6 ; O2 ; gas-phase reactions
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract A model has been developed to describe the chemistry which occurs in SF6/O2 plasmas and the etching of silicon in these plasmas. Emphasis is placed nn the gas-phase free radical reactions, and the predictions n( the model are compared with experimental results. Forty-seven reactions are included, although a subset of 18 reactions describes the chemistry equally well. Agreement between the calculated and measured concentrations of stable products downstream of the plasma is better than a factor of 2. The need for additional kinetic data and fàr well-characterized diagnostic studies of SF6/O2 plasmas is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01447127
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    A statistical analysis of polysilicon etching in a chlorine-argon plasma (1988)
    Springer
    Plasma chemistry and plasma processing 8 (1988), S. 349-382 
    Details
    ISSN: 1572-8986
    Keywords: Plasma etching ; polysilicon ; chlorine-argon plasma ; experiments ; statistical analysis
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The effects of base pressure, etch pressure, gas flow rates of HCl, Cl2, and argon, hexode temperature, DC self-bias, initial polysilicon thickness, and percent of overetch on the etch performance of polysilicon are examined. Statistical design of the experiments provided linear and quadratic models of the etch performance in terms of the aforementioned variables. These models were used to determine the relative importance of each process variable on the etch performance. Optical emission data were utilized as a means of endpoint detection and as a monitor of etch activity. The results indicate that the etch performance is more responsive to variations in physical mechanisms as opposed to chemical processes within the variable ranges used in these experiments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01016055
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Optical emission spectroscopy of CF4+O2 plasmas using a new technique (1988)
    Springer
    Plasma chemistry and plasma processing 8 (1988), S. 189-206 
    Details
    ISSN: 1572-8986
    Keywords: Plasma etching ; optical emission spectroscopy ; actinometry
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Optical emission intensities in the sheath region are not the same as those in the plasma region. This is because not only the electron density, but also the electron temperature, is different between the two regions. In this study a Cu rod is inserted into the plasma, and the rod potential is altered from the ground potential to a negative potential with a frequency of 20 Hz. The optical emission ray comes from the sheath region when the negative potential is applied, but comes form the plasma region at the ground potential. We can immediately detect the difference of the emission intensities between the plasma and the sheath regions by a lock-in amplifier. The pre-amplifier is placed prior to the lock-in amplifier. By using this pre-amplifier the output signal of the lock-in amplifier can be adjusted to zero for any emission line. the emission spectra from a CF4+O2 plasma are measured. A small amount of Ar gas and/or N2 gas is added and the output signal of the lock-in amplifier is adjusted to zero for either the Ar emission line or the N2 emission line. In a fluorine-contained plasma the F emission intensity normalized by the Ar one has been widely used in order to obtain the F density. This validity is confirmed by the present experiment. It is also confirmed that the CO emission intensity normalized by that of N2 is proportional to the CO density. The metastable states play an important role in the optical emission intensities of CO and N2 molecules.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01016157
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Large-area microwave and radiofrequency plasma etching of polymers (1988)
    Springer
    Plasma chemistry and plasma processing 8 (1988), S. 315-329 
    Details
    ISSN: 1572-8986
    Keywords: Plasma etching ; polymers ; microwave ; radiofrequency ; effect of structure
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract We have investigated O2/CF4 plasma etching of five commercial polymers: polyimide, polyamide, polyethylene terephthalate, polycarbonate and cured epoxy resin. A new large-area microwave plasma apparatus has been used in this work, but the same apparatus can also be used as a capacitively coupled radiofrequency (13.56 MHz) discharge reactor. The effect of operating parameters such as pressure, etchant gas composition, excitation frequency and sample temperature upon etch kinetics has been examined. We have observed distinct maxima in the etch rate as functions of pressure and CF4 concentration. Activation, energies evaluated from the Arrhenius plots fall in the range 0.04-0.2 eV, in agreement with data in the literature. Dry etch susceptibility of a given polymer correlates strongly with the degree of unsaturation in the polymer's structure
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01020409
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Quartz crystal microbalance simulation of the directionality of Si etching in CF4 glow discharges (1986)
    Springer
    Plasma chemistry and plasma processing 6 (1986), S. 1-10 
    Details
    ISSN: 1572-8986
    Keywords: Plasma etching ; silicon in CF4 ; etching directionality ; micro balance
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Two quartz crystal microbalances have been mounted in a planar rf discharge system in such a way that the potential of the microbalances with respect to the glow discharge can be varied. This apparatus allows a rapid simulation of the etching directionality that can be expected in real pattern transfer situations in that operating one microbalance at ground and one at a negative potential gives a measure of the sidewall and vertical etch rates, respectively. The voltage threshold for ion-assisted etching has been determined to be 20 V which is the approximate value of the plasma potential in this asymmetric system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00573817
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 11
    Electronic Resource
    Electronic Resource
    Gas-phase reactions of CF3 and CF2 with atomic and molecular fluorine: Their significance in plasma etching (1986)
    Springer
    Plasma chemistry and plasma processing 6 (1986), S. 11-25 
    Details
    ISSN: 1572-8986
    Keywords: Plasma etching ; CF3 reactions ; CF2 reactions ; F atom reactions ; association reactions
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Reaction rate coefficients have been measured at 295 K for both CF3 and CF2 with atomic and molecular fluorine. The reaction between CF3 and F was studied over a gas number density range of (2.4–23)×1016 cm−3 with helium as the bath gas. The measured rate coefficient increased from (1.1–1.7)×10−11 cm3 s−1 as the gas number density increased over this range. In contrast to this relatively small change in rate coefficient with gas number density, the rate coefficient for CF2+F increased from (0.4–2.3)×10−12 cm3 s−1 as the helium gas number density increased from (3.4–28.4)×1016 cm−3. Even for the highest bath gas number density employed, the rate coefficient was still more than an order of magnitude lower than earlier measurements of this coefficient performed at comparable gas number densities. Both these association reactions are examined from the standpoint of the Gorin model for association of radicals and use is made of unimolecular dissociation theory to examine the expected dependence on gas number density. The calculations reveal that CF3+F can be explained satisfactorily in these terms but CF2+F is not well described by the simple Gorin model for association. CF3 was found to react with molecular fluorine with a rate coefficient of (7±2)×10−14 cm3 s−1 whereas only an upper limit of 2×10−15 cm3 s−1 could be placed on the rate coefficient for the reaction between CF2 and F2. The values obtained for this set of reactions mean that the reaction between CF3 and F will play an important role in plasmas containing CF4. The high rate coefficient will mean that, under certain conditions, this particular reaction will control the amount of CF4 consumed. On the other hand, the much lower rate coefficient for reactions between CF2 and F means that CF2 will attain much higher concentrations than CF3 in plasmas where these combination reactions are dominant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00573818
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 12
    Electronic Resource
    Electronic Resource
    Etching of metals by means of organic radicals (1986)
    Springer
    Plasma chemistry and plasma processing 6 (1986), S. 197-203 
    Details
    ISSN: 1572-8986
    Keywords: Plasma etching ; organic radicals ; metallorganic compounds
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract A new method for the etching of In, Sn, Pb, Sb, Bi, and Zn films in methane and acetone discharges was examined with respect to various parameters such as electrode temperature, power density, bias, and reaction period. The etching species are assumed to be CH3 radicals forming a volatile metallorganic compound, since etch rates in hydrogen plasmas or argon sputter rates are orders of magnitude lower. Etch rates up to 1600 Å/min could be obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00575128
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 13
    Electronic Resource
    Electronic Resource
    A model of the chemical processes occurring in CF4/O2 discharges used in plasma etching (1986)
    Springer
    Plasma chemistry and plasma processing 6 (1986), S. 205-230 
    Details
    ISSN: 1572-8986
    Keywords: Plasma etching ; gas-phase reactions ; modelling
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract A model has been developed in an attempt to explain the chemistry which occurs in plasmas produced in mixtures of CF4 and O2. Emphasis is placed on gas-phase free radical reactions, and the predictions of the model are compared with experimental results. Dissociation rates following electron impact are deduced mainly from experimental observations although relative dissociation rates have been calculated. An important assumption of the model is that CF2 can be produced as a primary dissociation product following electron impact. Furthermore, this process is favored over that producing CF3 by more than a factor of 2. Experimental evidence is presented to support this assumption. Although the model agrees well with experiment on the total amount of fluorine produced, some discrepancy exists between the predicted and measured values of [F2]. It is suggested that the higher concentrations detected in the experiments resulted from recombination of F atoms in the sampling region. The agreement for concentrations of CO2, CO, and COF2 is generally better than a factor of 2 over a wide range of experimental conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00575129
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 14
    Electronic Resource
    Electronic Resource
    A model for the etching of Si in CF4 plasmas: Comparison with experimental measurements (1986)
    Springer
    Plasma chemistry and plasma processing 6 (1986), S. 231-246 
    Details
    ISSN: 1572-8986
    Keywords: Plasma etching ; CF4 chemistry ; modelling ; comparison with experiments
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract A model has been developed to describe the chemistry which occurs in CF4 plasmas and the etching of Si both in the plasma and downstream. One very important feature of this model is that for discharge residence times which vary by more than an order of magnitude, the amount of CF4 consumed is low and relatively constant. This is because the gas-phase combination reactions between F and both CF3 and CF2 lead to the rapid reforming of CF4. The model predicts that CF2 is a major species in the gas phase and that the [F] detected as a sample point downstream is a very sensitive function of [CF2]/[F] in the discharge. Even though the calculations show that [F] in the discharge varies only slightly over the wide range of experimental conditions considered, large variations in [F] at the sample point occur because the [CF2]/[F] ratio in the discharge changes. The concentrations of C2F6 and SiF4 are predicted to within a factor of 2 over a very wide range of experimental conditions. This confirms the importance of gas-phase free radical reactions in the etching of Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00575130
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 15
    Electronic Resource
    Electronic Resource
    Gas-phase reactions of SF5, SF2, and SOF with O(3 P): Their significance in plasma processing (1986)
    Springer
    Plasma chemistry and plasma processing 6 (1986), S. 247-258 
    Details
    ISSN: 1572-8986
    Keywords: Plasma etching ; SF6-O2 plasmas ; SF5 reactions ; SF2 reactions ; plasma chemistry
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Reactions of both SF5 and SF2 with O(3 P) and molecular oxygen have been studied at 295 K in a gas flow reactor sampled by a mass spectrometer. For reactions with O(3 P), rate coefficients of (2.0±0.5)×10−11 cm3 s−1 and (10.8±2.0)×10−11 cm3 s−1 were obtained for SF5 and SF2 respectively. The rate coefficients for reactions with O2 are orders of magnitude lower, with an estimated upper limit of 5×10−16 cm3 s−1 for both SF5 and SF2. Reaction of SF2 with O(3 P) leads to the production of SOF which then reacts with O(3 P) with a rate coefficient of (7.9±2.0)×10−11 cm3 s−1. Both SO and SO2 are products in the reaction sequence initiated by reaction between SF2 and O(3 P). Although considerable uncertainty exists for the heat of formation of SOF, it appears that SO arises only from reaction between SOF and O atoms which is also the source of SO2. These results are discussed in terms of a reaction scheme proposed earlier to explain processes occurring during the plasma etching of Si in SF6/O2 plasmas. A comparison between the results obtained here and those reported earlier for reactions of both CF3 and CF2 with O and O2 shows that there is a marked similarity in the free radical chemistry which occurs in SF6/O2 and CF4/O2 plasmas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00575131
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 16
    Electronic Resource
    Electronic Resource
    Plasma etching of refractory metals (W, Mo, Ta) and silicon in SF6 and SF6-O2. An analysis of the reaction products (1985)
    Springer
    Plasma chemistry and plasma processing 5 (1985), S. 333-351 
    Details
    ISSN: 1572-8986
    Keywords: Plasma etching ; SF6 discharge ; tungsten ; molybdenum ; mass spectrometry ; WF6 ; WOF4
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The etching rates and reaction products of refractory metals (W, Mo, and Ta) and silicon have been studied in a SF6-O2 r.f. plasma at 0.2 torr. The relative concentrations of WF6 and WOF4 and the intensities of the WF n + (n=3−5), WOF m + (m=1−3), MoF n + , and MoF m + ions have been measured by mass spectroscopy. An analysis of the neutral composition of the plasma during etching of these metals and a comparison with the results obtained for silicon show that at least two species are involved for W and Mo etching: fluorine and oxygen atoms. A reaction scheme is proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00566008
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...