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Optical properties of charged quantum dots doped with a single magnetic impurity (2013)

U. C. Mendes, M. Korkusinski, A. H. Trojnar, and P. Hawrylak

American Physical Society (APS)

In: Physical Review B

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Publikationsdatum: 2013-09-14

Beschreibung: Author(s): U. C. Mendes, M. Korkusinski, A. H. Trojnar, and P. Hawrylak We present a microscopic theory of the optical properties of self-assembled quantum dots doped with a single magnetic manganese (Mn) impurity and containing a controlled number of electrons. The single-particle electron and heavy-hole electronic shells are described by two-dimensional harmonic oscil... [Phys. Rev. B 88, 115306] Published Fri Sep 13, 2013

Schlagwort(e): Semiconductors II: surfaces, interfaces, microstructures, and related topics

Print ISSN: 1098-0121

Digitale ISSN: 1095-3795

Thema: Physik

Publiziert von American Physical Society (APS)

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Large band offset as driving force of two-dimensional electron confinement: The case of SrTiO_{3}/SrZrO_{3} interface (2013)

P. Delugas, A. Filippetti, A. Gadaleta, I. Pallecchi, D. Marré, and V. Fiorentini

American Physical Society (APS)

In: Physical Review B

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Publikationsdatum: 2013-09-14

Beschreibung: Author(s): P. Delugas, A. Filippetti, A. Gadaleta, I. Pallecchi, D. Marré, and V. Fiorentini Using advanced first-principles calculations we predict that the nonpolar SrTiO 3 /SrZrO 3 (001) interface, designed as either thin SrZrO 3 film deposited on SrTiO 3 or short-period (SrTiO 3 ) m /(SrZrO 3 ) n superlattice, hosts a two-dimensionally confined electron gas. Mobile electron charge due to native imp... [Phys. Rev. B 88, 115304] Published Fri Sep 13, 2013

Schlagwort(e): Semiconductors II: surfaces, interfaces, microstructures, and related topics

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3

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Group-velocity slowdown in a double quantum dot molecule (2013)

Stephan Michael, Weng W. Chow, and Hans Christian Schneider

American Physical Society (APS)

In: Physical Review B

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Publikationsdatum: 2013-09-14

Beschreibung: Author(s): Stephan Michael, Weng W. Chow, and Hans Christian Schneider The slowdown of optical pulses due to quantum-coherence effects is investigated theoretically for an “active material” consisting of InGaAs-based double quantum dot molecules. These are designed to exhibit a long-lived coherence between two electronic levels, which is an essential part of a quantum-... [Phys. Rev. B 88, 125305] Published Fri Sep 13, 2013

Schlagwort(e): Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Unrolling the evolution kinetics of ordered SiGe islands via Ge surface diffusion (2013)

M. Grydlik, M. Brehm, F. Hackl, F. Schäffler, G. Bauer, and T. Fromherz

American Physical Society (APS)

In: Physical Review B

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Publikationsdatum: 2013-09-21

Beschreibung: Author(s): M. Grydlik, M. Brehm, F. Hackl, F. Schäffler, G. Bauer, and T. Fromherz During molecular beam epitaxial growth of Ge islands on Si(001) substrates containing pit-patterned areas, an efficient Ge surface diffusion from unpatterned to pit-patterned substrate regions results in position-dependent island growth rates. We exploit this effect to map out the evolution of stric... [Phys. Rev. B 88, 115311] Published Fri Sep 20, 2013

Schlagwort(e): Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Suppression of Coulomb exchange energy in quasi-two-dimensional hole systems (2013)

T. Kernreiter, M. Governale, R. Winkler, and U. Zülicke

American Physical Society (APS)

In: Physical Review B

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Publikationsdatum: 2013-09-21

Beschreibung: Author(s): T. Kernreiter, M. Governale, R. Winkler, and U. Zülicke We have calculated the exchange-energy contribution to the total energy of quasi-two-dimensional hole systems realized by a hard-wall quantum-well confinement of valence-band states in typical semiconductors. The magnitude of the exchange energy turns out to be suppressed from the value expected for... [Phys. Rev. B 88, 125309] Published Fri Sep 20, 2013

Schlagwort(e): Semiconductors II: surfaces, interfaces, microstructures, and related topics

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6

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Measurement and effects of polarization fields on one-monolayer-thick InN/GaN multiple quantum wells (2013)

Lin Zhou, E. Dimakis, R. Hathwar, Toshihiro Aoki, David J. Smith, T. D. Moustakas, S. M. Goodnick, and Martha R. McCartney

American Physical Society (APS)

In: Physical Review B

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Publikationsdatum: 2013-09-26

Beschreibung: Author(s): Lin Zhou, E. Dimakis, R. Hathwar, Toshihiro Aoki, David J. Smith, T. D. Moustakas, S. M. Goodnick, and Martha R. McCartney Polarization fields associated with one-monolayer-thick InN/GaN multiple quantum wells (MQWs) cause shifts of the photoluminescence peak that depend on the GaN barrier layer thickness. Diffraction contrast and aberration-corrected scanning transmission electron microscopy show that the InN QWs are w... [Phys. Rev. B 88, 125310] Published Wed Sep 25, 2013

Schlagwort(e): Semiconductors II: surfaces, interfaces, microstructures, and related topics

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7

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Imaging the polariton relaxation bottleneck in strongly coupled organic semiconductor microcavities (2013)

David M. Coles, Richard T. Grant, David G. Lidzey, Caspar Clark, and Pavlos G. Lagoudakis

American Physical Society (APS)

In: Physical Review B

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Publikationsdatum: 2013-10-01

Beschreibung: Author(s): David M. Coles, Richard T. Grant, David G. Lidzey, Caspar Clark, and Pavlos G. Lagoudakis We use angular-resolved photoluminescence excitation spectroscopy to probe energy relaxation towards the lowest lying states ( k ∥ =0) on the lower polariton branch (LPB) of two different strong-coupled J -aggregate organic semiconductor microcavities. We find that states along the upper polariton branc... [Phys. Rev. B 88, 121303] Published Mon Sep 30, 2013

Schlagwort(e): Semiconductors II: surfaces, interfaces, microstructures, and related topics

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8

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Nonlinear piezoelectricity in wurtzite semiconductors (2013)

Pierre-Yves Prodhomme, Annie Beya-Wakata, and Gabriel Bester

American Physical Society (APS)

In: Physical Review B

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Publikationsdatum: 2013-10-01

Beschreibung: Author(s): Pierre-Yves Prodhomme, Annie Beya-Wakata, and Gabriel Bester We present first-principles calculations of piezoelectric coefficients of first and second order for AlN, GaN, InN, and ZnO, along with the composition dependence (bowing) of the linear terms. We show that eight second order coefficients are required and provide a simple description on how to incorp... [Phys. Rev. B 88, 121304] Published Mon Sep 30, 2013

Schlagwort(e): Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Charge carrier mobility in a two-phase disordered organic system in the low-carrier concentration regime (2013)

Cristiano F. Woellner, Zi Li, José A. Freire, Gang Lu, and Thuc-Quyen Nguyen

American Physical Society (APS)

In: Physical Review B

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Publikationsdatum: 2013-10-01

Beschreibung: Author(s): Cristiano F. Woellner, Zi Li, José A. Freire, Gang Lu, and Thuc-Quyen Nguyen In this paper we use a three-dimensional Pauli master equation to investigate the charge carrier mobility of a two-phase system which can mimic donor-acceptor and amorphous-crystalline bulk heterojunctions. By taking the energetic disorder of each phase, their energy offset, and domain morphology in... [Phys. Rev. B 88, 125311] Published Mon Sep 30, 2013

Schlagwort(e): Semiconductors II: surfaces, interfaces, microstructures, and related topics

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Single-electron double quantum dot dipole-coupled to a single photonic mode (2013)

J. Basset, D.-D. Jarausch, A. Stockklauser, T. Frey, C. Reichl, W. Wegscheider, T. M. Ihn, K. Ensslin, and A. Wallraff

American Physical Society (APS)

In: Physical Review B

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Publikationsdatum: 2013-10-01

Beschreibung: Author(s): J. Basset, D.-D. Jarausch, A. Stockklauser, T. Frey, C. Reichl, W. Wegscheider, T. M. Ihn, K. Ensslin, and A. Wallraff We have realized a hybrid solid-state quantum device in which a single-electron semiconductor double quantum dot is dipole coupled to a superconducting microwave frequency transmission line resonator. The dipolar interaction between the two entities manifests itself via dispersive and dissipative ef... [Phys. Rev. B 88, 125312] Published Mon Sep 30, 2013

Schlagwort(e): Semiconductors II: surfaces, interfaces, microstructures, and related topics

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