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  • Articles  (30)
  • 82.65  (30)
  • 2015-2019
  • 1990-1994  (30)
  • 1915-1919
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (30)
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  • Articles  (30)
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (30)
  • Philosophy
  • Political Science
  • Physics  (34)
  • 1
    Electronic Resource
    Electronic Resource
    Investigation of native-oxide growth on HF-treated Si(111) surfaces by measuring the surface-state distribution (1994)
    Springer
    Applied physics 59 (1994), S. 193-197 
    Details
    ISSN: 1432-0630
    Keywords: 73.20 ; 81.60 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The evaluation of the surface state distribution of differently HF-treated Si(111) surfaces during the native-oxide growth in air is investigated by the large-signal field-modulated photovoltage technique. The surface state distribution consisting of intrinsic and extrinsic Si dangling bond defects is directly related to the state of oxidation of the Si surface. It is shown that the kind of HF treatment strongly influences the concentration of extrinsic defects with a lower state of oxidation. Special HF preparations for H termination of the Si(111) surface result in a nearly intrinsic surface state distribution. During the oxidation process three typical phases can be distinguished each characterized by specific defect structures. It was found that native-oxide growth is highly sensitive to the concentration of extrinsic defects directly after HF treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00332216
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  • 2
    Electronic Resource
    Electronic Resource
    Depth profiling a III–V multilayered structure with an excimer laser (1994)
    Springer
    Applied physics 59 (1994), S. 295-297 
    Details
    ISSN: 1432-0630
    Keywords: 81.60 ; 82.65 ; 82.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A multilayered structure of GaAs and AlGaAs was depth profiled using the technique of digital etching. A single excimer laser (KrF) was used to control the etch rate and to identify each layer by monitoring the Ga ions generated during the desorption process. The Ga ions were the only ions observed and were only generated when the photon flux was in the GaAs layer. The etch rate, 0.9 monolayers (2.5 Å) per pulse, was constant with depth. The overall layer recognition resolution was 45 monolayers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00348233
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  • 3
    Electronic Resource
    Electronic Resource
    Femtosecond excimer-laser-induced structure formation on polymers (1994)
    Springer
    Applied physics 59 (1994), S. 289-293 
    Details
    ISSN: 1432-0630
    Keywords: 42.55 ; 81.40 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Structure formation upon 500 fs 248 nm KrF-laser irradiation of PolyEthylene Terephthalate (PET) and PolyImide (PI) has been investigated. The results obtained with fs pulses have been compared to those with ns pulses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00348232
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  • 4
    Electronic Resource
    Electronic Resource
    Entropy-controlled site occupation of CO adsorbed on Ni(100) (1993)
    Springer
    Applied physics 57 (1993), S. 499-505 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The adsorption of CO on a Ni(100) surface has been studied by FT-IRAS in the temperature range from 85 K to 300 K. At 300 K and for Θ=0.5, the CO molecules are predominantly adsorbed in on-top sites with only a minor fraction located at two-fold bridge sites. Measurements on a Ni(100) surface pre-covered with sulphur, oxygen and carbon indicate that the occupation of bridge sites may be caused by small amounts of surface impurities. The relative broadness of the infrared bands is explained by CO molecules occupying intermediate positions at domain walls. Upon lowering the temperature, the bridge sites are increasingly occupied at the expense of terminal sites. This process is completely reversible and is explained by a contribution of the hindered translations of the adsorbed CO molecules to the entropy. At 85 K and for low initial coverages, we observe an unusual high CO stretching frequency at 2205 cm−1 which cannot be explained at present.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331748
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  • 5
    Electronic Resource
    Electronic Resource
    The role of excited species in UV-laser materials ablation (1993)
    Springer
    Applied physics 57 (1993), S. 367-374 
    Details
    ISSN: 1432-0630
    Keywords: 82.65 ; 82.50 ; 42.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract UV-laser ablation is described in terms of a two-level system in which the excitation energy is dissipated via stimulated emission, thermal relaxation, and activated desorption of excited species. For thermal relaxation times t T〉10−9 s and ΔE* ≪ ΔE (activation energies for excited-state and ground-state species) the model predicts high ablation rates at moderate surface temperatures, typically below 2000° C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00332291
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  • 6
    Electronic Resource
    Electronic Resource
    The influence of surface reconstruction on the kinetics of adsorption-desorption processes: A Monte Carlo study of a simple model (1993)
    Springer
    Applied physics 56 (1993), S. 73-80 
    Details
    ISSN: 1432-0630
    Keywords: 68.35 ; 82.20 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The influence of surface reconstruction on the kinetics of adsorption-desorption processes is studied through a simple two-position model by means of Monte Carlo simulation. Effects due to constraints on the translational motion of activated complexes and to heterogeneity are particularly investigated. Heterogeneity emerges as the most important factor to explain the huge variation of the preexponential Arrhenius parameter with coverage observed in the H/W(001) system. In the present model it is conjectured that heterogeneity originates from additional interactions of H with surface or sub-surface W atoms when hydrogen is adsorbed on sites where surface W atoms are farther apart due to reconstruction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00351906
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  • 7
    Electronic Resource
    Electronic Resource
    The role of excited species in UV-laser materials ablation (1993)
    Springer
    Applied physics 57 (1993), S. 449-455 
    Details
    ISSN: 1432-0630
    Keywords: 82.65 ; 82.50 ; 42.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The stability of a planar surface upon pulsed UV-laser irradiation is studied with special emphasis on polymer ablation. Here, we consider a two-level system in which the excitation energy is dissipated via stimulated emission, non-radiative transitions, and activated desorption of excited species. With thermal relaxation times t T≥10−10 s the ablation front turns out to become stable. This could explain the smooth surfaces obtained after pulsed UV-laser ablation of pure and stress free organic polymers. The situation is quite different for materials, for example metals, where fast thermal relaxation of the excitation energy within times, typically, t T〈10−11 s, gives rise to instabilities which result in surface roughening.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331785
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  • 8
    Electronic Resource
    Electronic Resource
    The formation of subsurface oxygen on Pt(100) (1993)
    Springer
    Applied physics 57 (1993), S. 507-511 
    Details
    ISSN: 1432-0630
    Keywords: 68.35 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract PhotoEmission Electron Microscopy (PEEM) enables imaging a surface via its work function. If a CO covered Pt(100) surface is exposed to oxygen patches are formed which appear dark in the PEEM image due to their high work function. As the surface is heated to temperatures above 650 K we observe the conversion of these dark islands into very bright ones with work functions much lower than even that of the clean surface. These findings are attributed to a change in the dipole moment of the adsorbed oxygen induced by their migration beneath the surface. A total work-function decrease of up to 1.2 eV has been evaluated independently using a Scanning Photoemission Microscope (SPM). The properties of this new kind of oxygen were also further investigated with thermal desorption spectroscopy and with Auger-electron spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331749
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  • 9
    Electronic Resource
    Electronic Resource
    Deposition and characterization of diamond epitaxial thin films on silicon substrates (1993)
    Springer
    Applied physics 57 (1993), S. 483-489 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 81.15 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Heteroepitaxial diamond growth has been attempted on mirror-polished monocrystalline (001), (111), and (110) silicon substrates by microwave plasma CVD. The surface morphology and the crystallographic properties of the films were characterized by means of Scanning Electron Microscopy (SEM), Raman spectroscopy, X-ray diffraction, and X-ray and Raman pole-figure analysis. The results demonstrate epitaxial growth of diamond on both (001) and (111) oriented silicon substrates. Preliminary results give strong evidence for substrate-induced orientation of the diamond crystallites also on (110) oriented silicon substrate. The heteroepitaxy can be assigned to the oriented covalent bonding across the interface between diamond and silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331746
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  • 10
    Electronic Resource
    Electronic Resource
    Comparison of laser-induced etching behavior of III–V compound semiconductors (1993)
    Springer
    Applied physics 56 (1993), S. 343-348 
    Details
    ISSN: 1432-0630
    Keywords: 81.40 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Laser-induced maskless etching of III–V compound semiconductors (InSb, GaAs, and InP) in a KOH aqueous solution by irradiation with a focused argon-ion laser has been investigated to obtain high etching rates and aspect ratios of etched grooves. The etching rate at low laser power was found to depend on the carrier density of the sample and its type. With the increase of the laser power, the etching reaction becomes primarily a thermochemical reaction. High etching rates and aspect ratios have been achieved with a single scan of the laser beam. The damage induced by laser wet etching is less than that by laser dry etching, and the damage at the etched side wall is less than that at the etched bottom. Grooves with locally controlled depth and slab structures have been fabricated for application.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324353
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  • 11
    Electronic Resource
    Electronic Resource
    Ablation of polyimide (Kapton™) films by pulsed (ns) ultraviolet and infrared (9.17 μm) lasers (1993)
    Springer
    Applied physics 56 (1993), S. 417-423 
    Details
    ISSN: 1432-0630
    Keywords: 42.60 ; 82.65 ; 73.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ablation of the surface of a polyimide (Kapton™) film by single pulses of 248 nm or 308 nm radiation (∼20 ns) or 9.17 μm laser radiation (∼170 ns) was studied by photographing the emergence of the blast wave and the plume by a pulse (〈1 ns; 596 nm) of visible laser light. The dynamics of the blast wave was similar in the ultraviolet and in the infrared but the composition of the plume was obviously different. A mass of opaque solid material was ejected for as long as 2.6 μs following the IR pulse in contrast to the minute amount of solids that are seen in the ablation by UV laser pulses of ns duration. UV laser pulses of 50–400 μs duration interact with polyimide surfaces in a manner that is similar to IR laser pulses of ns duration or longer. Chemical analysis of the ablation products that are obtained under various conditions of ablation when compared to the known modes of thermal degradation of polyimide show that the reaction is a thermal process when IR laser pulses or UV laser pulses of long (〉10 μs) duration are employed. Ablation by ns UV laser pulses differs fundamentally in the chemistry of the products from all of the cases mentioned above.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00332574
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  • 12
    Electronic Resource
    Electronic Resource
    Photokinetic etching of polyethylene terephthalate films by continuous wave ultraviolet laser radiation (1992)
    Springer
    Applied physics 55 (1992), S. 269-273 
    Details
    ISSN: 1432-0630
    Keywords: 42.60 ; 82.65 ; 73.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Continuous wave laser radiation from an argonion laser in the wavelength range 275–330 nm can be used to etch polyethylene terephthalate (PET) films with as little thermal damage as from a pulsed, ultraviolet laser (248 nm or 308 nm) provided the beam is focussed to a spot of 10–100 kW/cm2 of power density and is moved over the surface at speeds at which the transit time over its own diameter (which can be looked upon as a “pulse width”) is on the order of 10–200 μs. In contrast to results which had been obtained previously on the photokinetic etching of polyimide and doped polymethyl methacrylate films under similar conditions, the sensitivity of PET to etching is 〉5-fold greater than either of these polymers and increases steadily with increasing pulse width. There is lateral thermal damage as the pulse widths increase to 〉200 μs. The material that is removed is vaporized in part. More than 20% is probably ejected in a molten state and resolidifies at the edge of the cut. There is no acoustic report similar to that seen in ablative photodecomposition. The process appears to be largely thermal in nature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00348396
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  • 13
    Electronic Resource
    Electronic Resource
    Effects of post-desorption collisions on the energy distribution of SiCl molecules pulsed-laser desorbed from Cl-covered Si surfaces: Monte-Carlo simulations compared to experiments (1992)
    Springer
    Applied physics 55 (1992), S. 554-560 
    Details
    ISSN: 1432-0630
    Keywords: 02.50 ; 81.60.c ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Si surfaces covered with up to a monolayer of chlorine by exposure to a low chlorine pressure have been irradiated with nanosecond excimer-laser pulses at a fluence just large enough to melt the surface. Angle-resolved time-of-flight (TOF) distributions and surface temperatures have been measured as a function of chlorine dose between laser pulses. The TOF distributions can be fitted well by Maxwell-Boltzmann (MB) distributions for all coverages and at all desorption angles. With increasing coverage, the intensity and kinetic energy distributions become increasingly peaked along the surface normal. Monte-Carlo simulations of the effect of post-desorption collisions, occurring when many molecules are desorbed within a very short time, reproduce the experimental results quite well. It is shown that just a few collisions per molecule are sufficient to convert any initial desorption distribution into a MB one.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331673
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  • 14
    Electronic Resource
    Electronic Resource
    Direct writing of Ag-lines on Mn-Zn ferrite by laser-induced thermal decomposition by CH3COOAg (1992)
    Springer
    Applied physics 54 (1992), S. 51-56 
    Details
    ISSN: 1432-0630
    Keywords: 81.40 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Laser-induced direct writing of silver lines on a ferrite surface from a silver acetate (CH3COOAg) thin layer has been investigated. The deposition is a thermochemical process and the threshold temperature for thermal decomposition of CH3COOAg is about 380° C. About 100% of Ag in the deposited lines has been achieved. The width of the deposited Ag-lines increased with the increase in laser power, and it can be accurately estimated by the temperature profile induced by laser irradiation within the power region below the melting point of ferrite. A line thickness of micron order can be formed both on a ferrite surface and on a deposited SiO2 surface, whereas the line width decreased with the increase in beam dwell time due to the vaporization of both CH3COOAg precursor and deposited Ag material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00348130
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  • 15
    Electronic Resource
    Electronic Resource
    Laser-stimulated desorption of potassium atoms (1991)
    Springer
    Applied physics 52 (1991), S. 445-447 
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    ISSN: 1432-0630
    Keywords: 82.65 ; 36.40 ; 73.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Desorption of K atoms by laser-excitation of surface plasmons in small K particles is reported. The desorption rate has been measured for different laser wavelengths and particle sizes. Time-of-flight measurements reveal a kinetic energy of the desorbed atoms of Ekin=0.13(3) eV. From the experimental data it is concluded that the desorption mechanism is non-thermal in nature. Comparison of the results reported here with our earlier work on Na desorption is made.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323657
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  • 16
    Electronic Resource
    Electronic Resource
    Large area excimer laser induced deposition of titanium from titanium tetrachloride (1991)
    Springer
    Applied physics 53 (1991), S. 339-342 
    Details
    ISSN: 1432-0630
    Keywords: 68.55.G ; 82.50.-m ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Large area excimer laser induced deposition of titanium on fused silica from TiCl4 is studied with an emphasis on process modeling. We show that several TiCl4 monolayers can be adsorbed if the surface is adequately prepared and that the Ti thin film growth occurs through the photodecomposition of this adsorbed TiCl4 layer. We propose two growth regimes. During an initiation phase, up to 3 nm in thickness, the adsorbed layer is photochemically decomposed giving a growth rate of ∼ 0.015 nm/pulse. In a second phase, the deposition rate increases to between 2 and 7 nm/pulse due to the laser heating of the preceding photochemically deposited titanium film. Between consecutive pulses, TiCl4 molecules primarily from the adsorbed layer diffuse to the reaction zone leading to a new adsorbed layer ready to be transformed to solid titanium.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00357198
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  • 17
    Electronic Resource
    Electronic Resource
    Angular distributions of sputtered atoms for low-energy nitrogen irradiation of silicon (1991)
    Springer
    Applied physics 53 (1991), S. 179-184 
    Details
    ISSN: 1432-0630
    Keywords: 81.15.C ; 79.20.N ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We studied the angular distributions of silicon and nitrogen atoms emitted from a Si target subjected to reactive sputtering by N 2 + ions at primary energies of 0.5 and 2keV. The composition of the deposited material does not depend strongly on the substrate position. From a comparison with nonreactive sputtering, we show that the observed shift of the Si angular distribution is mainly due to the contribution of collision events occurring in the first monolayer. Contrary to the case of noble gas ions, the sharpness of the Si distribution depends on the N 2 + energy. The behavior of the differential sputtering yield of silicon indicates that this effect is likely to be due to a loss of recoil atoms out of the preferential direction. A possible explanation of the observed phenomena consists in assuming an anisotropic emission of Si x N y radicals. This hypothesis is very attractive as it could satisfactorily explain the similarity we observed between the angular distributions of silicon and nitrogen.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323880
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  • 18
    Electronic Resource
    Electronic Resource
    Melting and solidification in laser-irradiated HgCdTe (1991)
    Springer
    Applied physics 53 (1991), S. 332-338 
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    ISSN: 1432-0630
    Keywords: 42.55P ; 81.40Z ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The results of the numerical analysis of the effects induced by pulsed Nd:YAG and ruby laser on Hg0.8Cd0.2Te are presented. The proposed model facilitates the planning of HgCdTe laser processing and the choice of the processing parameters such as: melt depth, melt duration of the surface layer and melt front velocity, as well as the irradiation parameters. The influence of the optical parameters and the temperature dependence of the HgCdTe thermal parameters on the results of laser irradiation are specially analyzed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00357197
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  • 19
    Electronic Resource
    Electronic Resource
    On the reaction kinetics in laser-induced pyrolytic chemical processing (1990)
    Springer
    Applied physics 50 (1990), S. 385-396 
    Details
    ISSN: 1432-0630
    Keywords: 42.5 ; 68 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Reaction rates, particle densities, and temperature distribution in pyrolytic (photothermal) laser-induced microchemical processing are investigated with respect to temperature and concentration-dependent transport coefficients, and with respect to the effect of thermal diffusion. While the model employed is particularly suitable for laser-induced chemical vapor deposition (LCVD), it can also be applied to many cases of laser-induced surface modification and dry-etching.
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    URL: http://dx.doi.org/10.1007/BF00323596
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  • 20
    Electronic Resource
    Electronic Resource
    Metal particles on surfaces-desorption, optical spectra, and laser-induced size manipulation (1990)
    Springer
    Applied physics 51 (1990), S. 271-280 
    Details
    ISSN: 1432-0630
    Keywords: 36.40 ; 79.20 ; 82.65 ; 68.45
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Desorption induced by electronic excitation with laser light is discussed. Emphasis is placed on nonthermal desorption where surface plasma excitation in small particles precedes the rupture of the surface chemical bond. A scenario for the mechanism underlying such a process is proposed. In this context, calculations of the electronic spectra of small sodium particles are presented and the influence of different multipole orders of the collective electron oscillation, of different shapes of the clusters and of the substrate are outlined. Furthermore, manipulation of the size distribution of metal particles on supports is described as an application of the effect. This allows the preparation of very special surfaces with novel physical and chemical properties. Methods to characterize such adsorbate-substrate combinations, especially by use of the optical spectra of the particles, are also discussed. Finally, prospects for future experiments in this field are outlined.
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    URL: http://dx.doi.org/10.1007/BF00324307
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  • 21
    Electronic Resource
    Electronic Resource
    On the interpretation of the RHEED intensity oscillations during the growth of vicinal faces (1990)
    Springer
    Applied physics 50 (1990), S. 349-352 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A quantitative treatment of the crystallization kinetics in MBE growth of vicinal surfaces results the relation l 2=2D sτK between the surface diffusion coefficient D s, the time τ for a monolayer deposition and the interstep distance l at which the RHEED intensity oscillations disappear. The correction factor K depends on the size and the energy of the two-dimensional critical nucleus and it is estimated to be smaller than 10−2. The currently used interpretation of the RHEED intensity oscillations ignores the correction factor K and, therefore, the calculated values of D s are several orders of magnitude smaller than its real values. The surface transport during the time of growth interruption is discussed in connection with the tendency to three dimensional growth at every second interface (where a deposition of the material with strong intermolecular bonds starts) of a small period superlattice.
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    URL: http://dx.doi.org/10.1007/BF00324505
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  • 22
    Electronic Resource
    Electronic Resource
    Models for thermal dissociation of silane on a polysilicon surface (1990)
    Springer
    Applied physics 50 (1990), S. 215-220 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Simple models for the thermally activated dissociation reaction of silane and silicon growth on a polycrystalline silicon surface are presented. The models are fitted to recent experimental molecular beam scattering data for the low-pressure reactive sticking coefficient. Thermally activated few-step models fit the data reasonably well, and thus, we are able to explain the temperature and pressure dependencies of the observed deposition rate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00343420
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  • 23
    Electronic Resource
    Electronic Resource
    On the kinetics of non-equimolecular reactions in laser chemical processing (1990)
    Springer
    Applied physics 51 (1990), S. 498-507 
    Details
    ISSN: 1432-0630
    Keywords: 42.5 ; 68 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The influence of counterdiffusion on the reaction rate in non-equimolecular laser-induced gas-phase processing is investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324733
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  • 24
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    Electronic Resource
    Laser-assisted reaction of metals with oxygen (1990)
    Springer
    Applied physics 50 (1990), S. 131-139 
    Details
    ISSN: 1432-0630
    Keywords: 81.60 ; 82.65 ; 42.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The present status of experimental and theoretical work on continuous wave laser-assisted reaction of metals with oxygen is presented. Differences between this and normal isothermal oxidation of metals are emphasized. Available theoretical models are discussed. They deal with roles of thermal history, feedback effects between optical absorption and reaction rate. The nature of so-called “non-purely thermal” effects is discussed. Hints for further research are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00343408
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  • 25
    Electronic Resource
    Electronic Resource
    Influence of electric field on heterogeneous reactions stimulated by laser light (1990)
    Springer
    Applied physics 50 (1990), S. 101-105 
    Details
    ISSN: 1432-0630
    Keywords: 81.60 ; 82.50 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We present experimental data for vanadium and copper oxidation by cw CO2 laser light in an external electric field. Direct influence of the external field on the crystallisation process has been demonstrated in both vanadium and copper cases; the oxidation rate and surface morphology depend sensitively on the sign and strength of the external field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323959
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  • 26
    Electronic Resource
    Electronic Resource
    Laser-induced trench etching of GaAs in aqueous KOH solution (1990)
    Springer
    Applied physics 51 (1990), S. 340-343 
    Details
    ISSN: 1432-0630
    Keywords: 81.40 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Maskless etching of n-type GaAs in a KOH aqueous solution by irradiation of an argonion laser has been investigated to obtain high etching rates and aspect-ratios of etched grooves. High etching rates of up to 805 μm/s and an aspect ratio of 8 have been achieved by a single scan of a laser beam. Microprobe photoluminescence (PL), Raman scattering, and Auger electron spectroscopy (AES) measurements were carried out on the trench surface to characterize damage induced by laser wet etching.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324316
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  • 27
    Electronic Resource
    Electronic Resource
    Theory of scanning tunneling microscopy (1990)
    Springer
    Applied physics 51 (1990), S. 281-288 
    Details
    ISSN: 1432-0630
    Keywords: 68.35 ; 73.20 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The present theoretical understanding of imaging clean and adsorbate covered metal surfaces in scanning tunneling microscopy is examined with special emphasis on a possible theoretical foundation for the observed unexpectedly large corrugation on close-packed metal surfaces. Several suggestions for explaining these experimental findings are investigated. Resonance tunneling via tip d-orbitals might be a possible mechanism of amplifying small lateral structure of electronic or elastic origin. Two complementary theoretical methods are applied. The first one concentrates on a realistic description of the potential and wave functions of the sample surface whereas the second one attempts to model a more realistic transition metal tip. In the first approach the tip is represented by a Gaussian protrusion on an otherwise planar free-electron metal surface. The sample surface is built from muffin-tin potentials accounting for the atomic structure and the d-electrons. The spatial current distribution near the tip region is obtained by summing the contributions of all scattered waves. The method has been applied to study the current to Al(111) and Pd(100) surfaces. The corrugation obtained is rather small and cannot explain the experimental observations. The second approach studies two transition metal tips consisting of a single tungsten atom adsorbed on a flat W(110) surface and on a group of four other W atoms. The cluster of four W atoms is coupled to a flat W(110) surface by using an embedding method. The basis set on the W atoms includes 6s-, 6p-, and 5d-orbitals. The electronic structure of the tip exhibits a 5 d 2-resonance near the Fermi level. The effects of tip d-orbitals and resonance tunneling on the lateral contrast in STM are analyzed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324308
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  • 28
    Electronic Resource
    Electronic Resource
    Boron doping of silicon by excimer laser irradiation in a reactive atmosphere (1990)
    Springer
    Applied physics 50 (1990), S. 479-484 
    Details
    ISSN: 1432-0630
    Keywords: 61.70T ; 79.20D ; 42.60K ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract UV excimer lasers have been used to dope semiconductors by a one-step process in which the laser serves both to melt a controlled thickness of a sample placed in dopant ambient and to photodissociate the dopant molecules themselves. Here we report the boron doping of silicon by means of an ArF (193 nm) excimer laser. Dopant atoms are obtained by photolysis of BCl3 or pyrolysis of BF3 molecules. The doping is performed both in gas ambient and using only an adsorbed layer. We have investigated the dependence of doping parameters such as laser pulse repetition and gas pressure on the subsequent boron impurity profiles and the dopant incorporation rate. These results indicate that the laser doping process is dopant-flux limited for BF3 and externally rate limited for BCl3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324571
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  • 29
    Electronic Resource
    Electronic Resource
    Laser-induced etching of titanium by Br2 and CCl3Br at 248 nm (1990)
    Springer
    Applied physics 50 (1990), S. 609-615 
    Details
    ISSN: 1432-0630
    Keywords: 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A quartz crystal microbalance (QCM) has been used to study the KrF* excimer laser-induced etching of titanium by bromine-containing compounds. The experiment consists of focusing the pulsed UV laser beam at normal incidence onto the surface of a quartz crystal coated with 1 μm of polycrystalline titanium. The removal of titanium from the surface is monitored in real time by measuring the change in the frequency of the quartz crystal. The dependence of the etch rate on etchant pressure and laser fluence was measured and found to be consistent with a two-step etching mechanism. The initial step in the etching of titanium is reaction between the etchant and the surface to form the etch product between laser pulses. The etch product is subsequently removed from the surface during the laser pulse via a laser-induced thermal desorption process. The maximum etch rate obtained in this work was 6.2 Å-pulse−1, indicating that between two and three atomic layers of Ti can be removed per laser pulse. The energy required for desorption of the etch product is calculated to be 172 kJ-mole−1, which is consistent with the sublimation enthalpy of TiBr2 (168 kJ-mole−1). The proposed product in the etching of titanium by Br2 and CCl3Br is thus TiBr2. In the etching of Ti by Br2, formation of TiBr2 proceeds predominantly through the dissociative chemisorption of Br2. In the case of etching with CCl3Br, TiBr2 is formed via chemisorption of Br atoms produced in the gas-phase photodissociation of CCl3Br.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323455
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  • 30
    Electronic Resource
    Electronic Resource
    Effect of laser light on n-GaAs photoetching (1990)
    Springer
    Applied physics 51 (1990), S. 61-63 
    Details
    ISSN: 1432-0630
    Keywords: 81.60 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The etching of n-GaAs in aqueous solutions of hydroxides stimulated by HeNe and HeCd laser light was studied. It was found that at low laser-power densities (5–10 W · cm−2) the etched depths do not depend on the wavelength of the incident light. This conclusion is related to the concentration of the photogenerated holes on the semiconductor surface. The diffusion length and absorption depths for HeNe and HeCd lasers are compared.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324466
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