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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (29)
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  • Physics  (31)
  • 1
    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Transient enhanced diffusion of phosphorus in silicon has been investigated for implants below and above the threshold for a complete amorphization. Rapid thermal processes (electron beam) and conventional furnaces have been used for the annealing. In the case of implants below amorphization, a strong enhanced diffusion, proportional to the amount of damage produced, has been observed. The extent of the phenomenon is practically independent of the damage depth position. In contrast to this, the formation of extended defects at the original amorphous-crystalline interface makes the diffusivity strongly dependent on depth in the case of post-amorphized samples. No enhanced diffusion effect is observed if the dopant is confined in the amorphous layer, while a remarkable increase in the diffusivity is detected for the dopant located in the crystalline region beyond the amorphous-crystalline interface. Damage distribution after implantation and its evolution during annealing have been determined by double crystal x-ray diffraction and correlated to anomalous P diffusivity. A qualitative distribution of the interstitial excess in solution in the silicon lattice during annealing is proposed for the two different cases. These point defects, released by the dissolution of the interstitial clusters produced by the implanted ions, have been identified as responsible for the observed enhanced P diffusion.
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  • 2
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    Applied physics 48 (1989), S. 347-354 
    ISSN: 1432-0630
    Keywords: 61.80 ; 68.35Fx
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ion beam mixing of Al layers on Fe and Fe layers on Al are studied by irradiation with 200 keV Xe+-ions at room temperature as a function of the thickness of the top layer and of the ion fluence from 5×1015 to 7.5×1016ions/cm2. Deconvolution procedures are needed to separate the influence of the ion sputter profiling by AES from the ion beam induced mixing effects. Auger electron spectroscopy data reveal that the mixing induced diffusivity ought to be considered as a function of concentration. The diffusion coefficients are evaluated by the Boltzmann-Matano method. A strong dependence of the diffusion coefficients and also the mixing efficiencies from the ion dose, the depth of the interface and the nuclear energy deposition were observed. Results are discussed in terms of the diffusional and collisional mixing as well as chemical affinity of both Fe and Al.
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  • 3
    ISSN: 1432-0630
    Keywords: 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A microscopy study of the morphology of the damage produced by TEA-CO2 laser pulses in cubic ZnSe single crystals grown from melt is presented. The observed bulk filamentary damage consists of relatively uniformly distributed “elementary” damaged zones, located at specific sites where absorbing inclusions could exist. Transmission electron microscopy and laser ion mass spectroscopy investigations revealed the absorbing inclusions to be thin graphite foils, originating from the crucible used for crystal growth.
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  • 4
    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80 ; 78.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Positron-annihilation lifetime and Doppler-broadening measurements are used to investigate defects in silicon irradiated at 373 K with 6 MeV electrons to a dose of 1×l019e/cm2. In the unirradiated silicon sample (p type) a temperature-independent behaviour of the bulk-lifetime is observed in the temperature interval 110–500 K with a constant value of 220±1 ps. The slight effect observed on the S-parameter evolution is explained taking into account the thermal expansion of the lattice. The lifetime results obtained at 80 K and at 300 K after isochronal annealing as well as the behaviour of the intensity of the second lifetime componentI 2 during lifetime measurements below the irradiation temperature in the irradiated silicon sample (n type), clearly indicate the temperature dependent characteristics of the positron trapping cross section σt(T) ∝T n withn= −1.905±0.016. From isochronal annealing results, an annealing stage is observed in which di-vacancies agglomerate into quadri-vacancies. The mean positron lifetime in those quadri-vacancies is 350 ps.
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  • 5
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    Applied physics 49 (1989), S. 149-155 
    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The annealing behavior of secondary defects generated in 2 MeV B- and P-, and 1 MeV As-implanted (100) Si with a dose of 5×1014 ions/cm2 has been investigated after rapid thermal annealing (RTA) treatment using cross-sectional TEM observations. The results are compared with ones obtained by furnace annealing (FA) treatment. RTA is more effective than FA for the defect density reduction of deep defects existing beyond 2 μm depths from the surface in B- and P-implanted layers. However, when a dislocation loop diameter is close to the substrate surface, as in the case of As implantation, the loops climb up to the surface by 1250 °C RTA. Moreover, repeated RTA is effective for the suppression of secondary defect growth in B- and P-implanted layers, while there is no difference in defect density or configuration for As implantation between repeated and simple RTA.
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  • 6
    ISSN: 1432-0630
    Keywords: 78.20 ; 61.80 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The photoacoustic technique has been used to characterize ion implanted Si layers, as a function of the implantation conditions of ion dose and energy and of thermal annealing conditions, through the determination of the material thermal conductivity and optical absorption coefficient. It was found that the technique can discriminate between amorphous material obtained under different implantation conditions. Regarding the annealed samples, different results have been obtained for amorphous as-implanted, fine grain polycrystalline, highly defective single crystalline and defect-free single crystalline materials.
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  • 7
    ISSN: 1432-0630
    Keywords: 81.60 ; 61.80 ; 78.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The oxidation of ion implanted silicon induced by a repetitive excimer laser working in liquid phase regime has been monitored by a simple in situ technique. It consists to follow the optical reflectivity at the wavelength 633 nm of the silicon samples under irradiation. The influence of implantation and laser irradiation conditions on the oxidation process has been investigated by this technique. The results obtained have been compared using infrared absorption data. The role of the Si/SiO2 interface roughness on the oxide film quality has been studied.
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  • 8
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    Applied physics 45 (1988), S. 1-34 
    ISSN: 1432-0630
    Keywords: 61.80 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A classification scheme for the different forms of implant-related damage which arise upon annealing consisting of five categories is presented. Category I damage is “subthreshold” damage or that which results prior to the formation of an amorphous layer. If the dose is increased sufficiently to result in the formation of an amorphous layer then the defects which form beyond the amorphous/crystalline (a/c) interface are classified as category II (“end of range”) damage. Category III defects are associated with the solid phase epitaxial growth of the amorphous layer. The most common forms of this damage are microtwins, hairpin dislocations and segregation related defects. It is possible to produce a buried amorphous layer upon implantation, If this occurs, then the defects which form when the two a/c interfaces meet are termed category IV (“clamshell”, “zipper”) defects. Finally, category V defects arise from exceeding the solid solubility of the implanted species in the substrate at the annealing temperature. These defects are most often precipitates or dislocation loops. In addition to presenting examples of this classification scheme, new results emphasizing category II, IV, and V defects will be presented. For category II defects, the source, dose and mass dependence as well as the influence of pre- and post-amorphization is discussed. The category IV defects which arise from buried amorphous layers in {100} oriented As implanted samples is presented. Half loop dislocations which arise during annealing of high dose As implants, are shown to originate in the category V defects and grow upon dissolution of As clusters and precipitates.
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  • 9
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    Applied physics 46 (1988), S. 13-16 
    ISSN: 1432-0630
    Keywords: 61.80 ; 64 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ion-beam induced atomic mixing of Cu/Au bilayer thin film is studied using combined electrical resistivity measurements and Rutherford Backscattering Spectrometry (RBS). 400 keV Kr+ ion irradiation with fluences ranging from 3.3×1015 to 7.6×1016 ions/cm2 at room temperature have been used. Ion beam mixing lead to a uniformly mixed metal alloy. The formation of Cu/Au solid solutions depends on the initial composition and on the fluence of irradiating ions. For an initial composition of Cu42Au58, a Cu-rich solid solution of composition Cu72Au28 is formed after irradiation with 7.6×1016 ions/cm2. The kinematics of the intermixing process is also studied by in situ electrical resistivity measurements which confirmed the formation of the Cu/Au solid solutions.
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  • 10
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    Applied physics 42 (1987), S. 125-127 
    ISSN: 1432-0630
    Keywords: 61.80 ; 78.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Positron-lifetime measurements have been used to study the annealing of vacancies in neutron-irradiated GaAs. The vacancies which are interpreted as defects in the Ga sublattice disappear in a single annealing stage (at 500°C in GaAs doped with Si or Zn, and at 600°C in Cr-doped GaAs).
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  • 11
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    Applied physics 42 (1987), S. 19-33 
    ISSN: 1432-0630
    Keywords: 61.80 ; 66.30 ; 79.20N
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A titanium-layer of approximately 90 nm thickness has been homogeneously loaded with deuterium by implantation and diffusion. Desorption was studied by use of28Si ions of up to 20 MeV energy (and other ions). The spectrum of the elastic-recoil-detection method serves as indication of the released and retained amount of deuterium. The retained deuterium is recorded as a function of the employed ion dose and is converted into a desorption rate as a function of the retained deuterium concentration. — A one-dimensional theory considering transitions from vacuum to surface and surface to Ti volume (and back) leads to a system of equations, the solutions of which allow adaptation to the experiment and therefore an evaluation with respect to certain characteristic parameters. — Some of the results might be influenced by the high concentration of C and O impurities.
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  • 12
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    Applied physics 42 (1987), S. 279-285 
    ISSN: 1432-0630
    Keywords: 61.80 ; 44.90
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We present some calculations of heat flow in an absorbing film deposited on a non-absorbing substrate. The energy source is a Gaussian laser beam. We analyse the effects of film thickness, thermal conductivity, spot radius and forced cooling on the temperature profile and, in a special case, the time evolution of that profile. The emphasis is on applications in optical bistability.
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  • 13
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    Applied physics 42 (1987), S. 179-192 
    ISSN: 1432-0630
    Keywords: 61.80 ; 66.30 ; 79.20N
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The model used in the first part of this investigation is enlarged to take account of the experimentally found inhibition of desorption by gases from the rest-gas atmosphere of the target chamber. The main parameters that can be found by adaptation of a model set of equations are the rate ratios for transfer of chemisorbed atoms in the surface and back, and of the maximal desorption current densities from the surface into the vacuum for deuterium and foreign gases. The desorption cross sections are discussed in relation to the electronic stopping power of the fast ions.
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  • 14
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    Applied physics 44 (1987), S. 265-268 
    ISSN: 1432-0630
    Keywords: 73.00 ; 68.20 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The surface conductivity of pure and proton exchanged LiNbO3 was studied. After bombarding the surface with Ar+ ions having an energy of about 2000 eV the samples showed an enhanced specific conductivity near the surface (5 nm) of 6 orders of magnitude. This corresponds to a specific conductivity of 10−5 S/cm at room temperature. The enhanced conductivity is thermally activated with an energy of 0.41±0.04 eV, and it seems to be a non-ionic conductivity, because no polarization behaviour was observed. This enhanced conductivity was observed at the surface of both pure and proton exchanged LiNbO3.
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  • 15
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    Applied physics 44 (1987), S. 347-352 
    ISSN: 1432-0630
    Keywords: 61.80 ; 66.30 ; 61.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The stable defects created in most dielectrica by fast heavy ions, called “latent nuclear tracks”, are zones of reduced density. Using the small-angle neutron-scattering technique it is shown that water molecules which permeate a polymer foil are preferentially embedded in these zones. In the track region the diffusion- and the sorption coefficients for various atoms and molecules are larger than in unirradiated material. In the damaged region of tracks produced by uranium ions in Polyethyleneterephtalate (PETP) the permeability for neon, oxygen, argon, carbondioxide, and water is enhanced by factors between 60 and 290. A method for the preferential etching of latent nuclear tracks in PETP using methanol as a solvent is suggested.
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  • 16
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    Applied physics 40 (1986), S. 95-99 
    ISSN: 1432-0630
    Keywords: 61.80 ; 78.70B
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Positron-annihilation technique has been used to study the recovery of defects in α-irradiated n-type GaAs specimens. The Doppler-broadened lineshape parameterS, shows a smooth recovery of defects over the temperature region 120–600° C. The lifetime measurements have also been performed to characterise the types of defects present. The positron mean lifetimeτ m follows the behaviour of the “S” parameter, indicating a rather complex defect structure recovery. The variation in the defect specific parameter,R, with temperature is also consistent with these observations.
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  • 17
    ISSN: 1432-0630
    Keywords: 72.15C ; 75.60L ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Magnetic after-effect measurements were performed on high-purity α-iron after electron irradiation at 80 K. Using theLC-oscillator technique for measuring the magnetic after-effect we obtained simultaneously information about the recovery of the residual resistivity by analysing the permeability of the specimen at 4.2 K. The recovery in Stage IE and Stage III are briefly discussed in terms of the two-interstitial model.
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  • 18
    ISSN: 1432-0630
    Keywords: 42.70 ; 42.60 ; 61.80 ; 68.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We report on experimental data of chemical compounds formed in the damaged area at the surface of certain optical ZnSe windows subjected to multi-pulse microsecond pulsed TEA-CO2 laser irradiation in air. The results are analysed from the viewpoint of implication of the oxidation process activated under the action of CO2-laser power in plasma initiation and evolution of surface damage process.
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  • 19
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    Applied physics 41 (1986), S. 171-174 
    ISSN: 1432-0630
    Keywords: 61.80 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Markers of Nb, Ru, Ag, In, Sb, Hf, Pt, Au, and Bi in Cu were mixed by irradiation with 750 keV Kr at 77 K and analyzed in situ by backscattering of 1.9 MeV He+. Cu with Pt and Au markers were also irradiated and analyzed at 7 K. The results were identical to those obtained at 77 K results. The measured mixing efficienciesDt/øF D , for the various markers correlate with their respective impurity tracer diffusivities and impurity-vacancy binding energies in Cu. The correlation suggests that diffusion by a vacancy mechanism during a thermal spike as an important process in ion mixing of marker atoms in Cu.
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  • 20
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    Applied physics 39 (1986), S. 59-64 
    ISSN: 1432-0630
    Keywords: 61.80 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ion-beam mixing was measured in immiscible Cu bilayer systems after Kr irradiation at 6 K and at 295 K. It was observed that for the systems which form miscible liquids but which have limited solid solubility, Cu-Nb and Cu-Bi, mixing occurs at 6 but not at 295 K. For a system which is not miscible in either the solid or liquid state, mixing does not occur at either 6 or 295 K. Mixing was also measured in pure Cu isotope bilayer specimens,63Cu–65Cu, to provide a standard for the other measurements. The results are interpreted on the basis of an atomistic model of ion beam mixing. The model assumes that point defects are created in the initial phases of the cascade evolution, and that these defects migrate during the later ‘thermal spike’ phase.
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  • 21
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    Applied physics 40 (1986), S. 109-117 
    ISSN: 1432-0630
    Keywords: 61.80 ; 72.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ion bombardment induced mixing of Ta-Si films has been studied using 400 keV argon ions. Doses varied from 7×1014 to 1×1017 Ar+ cm−2 with post-bombardment anneals of 180–900 s at temperatures in the range 600–860 °C using radiant heating. Silicide uniformity and stoichiometry were determined using alpha backscattering spectrometry. Optimum fabrication parameters were determined with regard to subsequent material sheet resistivity, temperature coefficient of resistance and application as a temperature sensing material. Similar measurements were made on CoSi2 layers prepared by annealing ion bombarded samples and comparison with silicide films arising from purely thermal annealing was made. CoSi2 was found to be the more suitable material for temperature-sensor applications, showing a positive linear variation in sheet resistivity in the range 0–400 °C for samples which could be prepared simply and reproducibly.
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  • 22
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    Applied physics 39 (1986), S. 191-195 
    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A surface contamination effect was detected by double-crystal x-ray diffraction analysis of silicon wafers implanted with silicon ions at different doses and energies after annealing at 700 °C. The hypothesis of recoiled oxygen from the native oxide, as the impurity responsible for surface strain, was excluded by x-ray characterization of a series of samples implanted through thermally grown silicon oxides. The surface positions of the strain, resulting from x-ray analysis after 700 °C annealing and the analysis of the electron diffraction patterns, taken on particles originated from precipitation of the impurity by 1000 °C heating, allowed to conclude that the contamination phenomenon is due to iron atoms coming from the ion implanter.
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  • 23
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    Applied physics 39 (1986), S. 183-190 
    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electrical properties and lattice disorders of 50 keV, focused ion beam (FIB) gallium-implanted silicon layers have been investigated as a function of beam scan speed and ion dose. The critical dose for continuous amorphous layer formation is 8 ∼ 10 × 1013 ions/cm2, when the beam scan speed is lowered to about 10−2 cm/s. This is about 1/3 that of conventional ion implantation. The increase in secondary defect formation after annealing is also observed as the beam scan speed decreases under implantation conditions close to the critical dose. However, the effect of high dose rate on the electrical activation of gallium atoms and critical dose reduction is not as significant as with FIB implantation by a lighter ion mass, such as boron. The results are compared with those obtained by conventional ion implantation.
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  • 24
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    Applied physics 41 (1986), S. 127-135 
    ISSN: 1432-0630
    Keywords: 61.80 ; 72.15 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Atomic mixing of Fe/Al bilayered samples induced by an energetic xenon beam has been studied by RBS-TEM and sheet resistivity measurements. Mixing is detected at 2.5 × 1015 Xe/cm2 and then proceeds up to 2 × 1016 Xe/cm2. A blocking effect of the mixing for larger doses is observed. Homogeneous concentration is not obtained across the sample. Instead a pronounced graded composition is reached. Several explanations of the mixing process and the subsequent blocking effect are suggested: — sharp gradients in the nuclear energy deposition profile which decrease with dose — grain growth phenomena — precipitation of crystalline xenon acting as efficient annihilation sinks for vacancies.
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  • 25
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    Applied physics 41 (1986), S. 201-207 
    ISSN: 1432-0630
    Keywords: 34 ; 61.80 ; 85.30
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Models for the description of implantation profiles in multilayer targets are compared. It is found that all analytical models have severe limitations if the different layers possess very different stopping powers. The best description of multilayer targets is obtained by a combination model using density scaling of the range and integration to account for mass conservation.
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  • 26
    ISSN: 1432-0630
    Keywords: 61.80 ; 61.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Fast heavy ions produce stable defects in most dielectrica. As examples mica, Polyethylenterephtalat and Polystyrol were irradiated with Ar, Ni, Kr, Xe and U ions in an energy range from 0.5 up to 20 MeV/u. The resulting defects were investigated by neutron and x-ray small-angle scattering. The ion beam supplied by the UNILAC accelerator at GSI Darmstadt is characterized by its small emittance, the well defined mass, charge and energy of the ions and their stochastical distribution in the phase space. In scattering experiments the system of scattering centers created by these ions causes a scattered intensity distribution which strongly depends on the orientation of the sample with respect to the unscattered neutron or x-ray beam. This dependence is investigated and explained. By a mathematical model — describing form, size, and density of the average ion track — the measured intensity distribution is simulated. Based on the model, computer procedures are written, simulating the scattering experiment by varying the most important experimental and instrumental parameters and calculating the expected theoretical intensity distribution on the detector. The parameter values of this model — the maximum density difference in the track, length of the defect, and radial dimension — are determined by least square fits to the measured data. A simple description of the dependence of these parameters on the ion energy can be given in relation to the energy loss of the primary ion. It is not only possible now to predict an expected track, to calculate its volume and the number of missing atoms, but moreover to check theories of the track formation.
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  • 27
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    Applied physics 38 (1985), S. 139-143 
    ISSN: 1432-0630
    Keywords: 61.80 ; 66.30
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ion beam mixing of Au markers in Cu samples was measured after 500-keV Kr irradiation at 6, 80, and 295 K. Additional measurements were performed on samples irradiated at 80 K with 1.8-MeV Kr and 295 K with 1.7-MeV Kr. It was observed that the mixing is the same at 6 K as at 80 K but that it is somewhat greater at 295 K. It was also found that at both 80 and 295 K the mixing is the same for 500-keV as for 1.7 MeV projectile energies if the irradiations are compared on the basis of deposited damage energy. Another set of mixing measurements were performed on Ni and Ti markers in Hf and Hf markers in Ni at 6, 80, and 295 K. Although Ni is known to be a fast thermal diffusing atom in Hf, only a 50% difference in ion beam mixing was observed for the Ni and Ti markers at 6 or 80 K. For these marker systems, the mixing was also approximately the same at 6 and 80 K. At 295 K, the mixing remained constant for the Ti marker, increased slightly for the Hf marker in Ni, but decreased strongly for the Ni marker in Hf. The results for both sets of measurements are interpreted according to a qualitative picture of the development of displacement cascades obtained from molecular dynamics computer simulations.
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  • 28
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    Applied physics 36 (1985), S. 103-111 
    ISSN: 1432-0630
    Keywords: 61.80 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ion beam induced mixing of Al-Ni has been studied using N 2 + and Ar+ bombardment. High dose (4×1017 ions cm−2) nitrogen bombardment was found to cause blister formation with no unambiguous evidence of mixing. However, using argon ions at elevated substrate temperatures (400–450 °C) led to extensive mixing of 2000 Å Al layers on Ni. The mixing mechanism is considered to be point defect mediated radiation enhanced diffusion with a possible contribution from cascade mixing and interfacial oxide layer breakdown during the initial stages of treatment.
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  • 29
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    Springer
    Applied physics 37 (1985), S. 187-189 
    ISSN: 1432-0630
    Keywords: 61.10 ; 81.30 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An analytical method for precise determination of lattice constants of cubic crystals, from x-ray diffractometric measurements, was formulated. The method minimizes both systematic and random errors and enables the estimation of the uncertainties in the constants. For higher precision, a weighting factor may also be used. The method was applied to diffractometric data from a Si powder standard reference material and was considered to be highly reliable for precise measurements.
    Type of Medium: Electronic Resource
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