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  • Articles  (41)
  • 66.30  (41)
  • Springer  (41)
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (41)
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  • Articles  (41)
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  • Springer  (41)
  • American Meteorological Society
  • Wiley
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (41)
  • Natural Sciences in General
  • Geosciences
  • Energy, Environment Protection, Nuclear Power Engineering
  • Physics  (41)
  • 1
    Electronic Resource
    Electronic Resource
    Diffusion of gold in dislocation-free or highly dislocated silicon measured by the spreading-resistance technique (1986)
    Springer
    Applied physics 39 (1986), S. 37-48 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The diffusion of Au in dislocation-free or plastically deformed Si (1011 to 1013 dislocations/m2) was measured with the aid of the spreading-resistance technique. The Au profiles produced indislocation-free Si slices by in-diffusion from both surfaces possess nonerfc-type U shapes as predicted by the so-called kick-out diffusion model. This model is used to calculate the contribution of self-interstitials to the (uncorrelated) Si self-diffusion coefficient,D I SD =0.064×exp(−4.80 eV/kT)m2 s−1, from the present and previous data on the diffusivity and solubility of Au in Si in the temperature range 1073–1473 K. Inhighly dislocated Si the diffusion of Au is considerably faster than in dislocation-free Si. From the erfc-type penetration profiles found in this case, effective Au diffusion coefficients were deduced and combined with data on the solubility of Au in Si. ThusC i eq D i=0.0064 ×exp(−3.93 eV/kT)m2 s−1 was obtained in the temperature range 1180–1427 K, whereC i eq andD i are the solubility and diffusivity of interstitial Au in Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01177162
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  • 2
    Electronic Resource
    Electronic Resource
    Surface self-diffusion on Pt(110): Directional dependence and influence of surface-energy anisotropy (1986)
    Springer
    Applied physics 41 (1986), S. 137-143 
    Details
    ISSN: 1432-0630
    Keywords: 68.20 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The decay of periodic surface profiles by surface self-diffusion is simulated by numerically solving the phenomenological equations for this process. The crystalline nature of the surface is taken into account by introducing an anisotropic surface free energy,γ(θ). Depending on the degree of anisotropy ofγ(θ), the decay kinetics and the shapes of the profiles are largely different. A comparison with measurements of profile decay on Pt(l10) single crystal surfaces shows that the anisotropy inγ(θ) along the [1¯10] azimuth should be about 2–3%, while that along the [001] azimuth is expected near 8%. In the latter case large amplitude profiles exhibit (111) faceting and slow decay kinetics which are non-exponential. The rate of surface self-diffusion on Pt(110) is anisotropic with the [1¯10] direction being faster than the [001] direction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00631121
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  • 3
    Electronic Resource
    Electronic Resource
    Ion mixing and thermochemical properties of markers in Cu (1986)
    Springer
    Applied physics 41 (1986), S. 171-174 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Markers of Nb, Ru, Ag, In, Sb, Hf, Pt, Au, and Bi in Cu were mixed by irradiation with 750 keV Kr at 77 K and analyzed in situ by backscattering of 1.9 MeV He+. Cu with Pt and Au markers were also irradiated and analyzed at 7 K. The results were identical to those obtained at 77 K results. The measured mixing efficienciesDt/øF D , for the various markers correlate with their respective impurity tracer diffusivities and impurity-vacancy binding energies in Cu. The correlation suggests that diffusion by a vacancy mechanism during a thermal spike as an important process in ion mixing of marker atoms in Cu.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616835
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  • 4
    Electronic Resource
    Electronic Resource
    Ion-beam mixing of multilayered targets ballistic effects (1987)
    Springer
    Applied physics 42 (1987), S. 193-196 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In this work a Monte-Carlo method of dynamical type is used to simulate the ion-beam mixing of a composite, multilayered target. The calculation refers to a Ni-Ta structure, on a silicon substrate, bombarded with As+ ions and elucidates the effect of the dose and of the target structure on the intermixing of the target constituents.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620598
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  • 5
    Electronic Resource
    Electronic Resource
    Laser-induced doping of GaAs (1985)
    Springer
    Applied physics 38 (1985), S. 49-56 
    Details
    ISSN: 1432-0630
    Keywords: 66.30 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin layers of GaAs are heavily doped locally by laser induced Se or Zn diffusion. H2Se or diethylzinc gases are used to provide Se or Zn dopant atoms. The surface is locally heated with 3 ns light pulses from a Q-switched frequency doubled Nd-YAG laser. The doping process is described in detail. Doping profiles and sheet carrier concentrations are measured as a function of substrate temperature, laser fluence and processing time. Dopant concentrations of more than 1021 cm−3, with a thickness of the doped layer of less than 20 nm can be achieved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618726
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  • 6
    Electronic Resource
    Electronic Resource
    Ion-beam mixing in pure and in immiscible copper bilayer systems (1986)
    Springer
    Applied physics 39 (1986), S. 59-64 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ion-beam mixing was measured in immiscible Cu bilayer systems after Kr irradiation at 6 K and at 295 K. It was observed that for the systems which form miscible liquids but which have limited solid solubility, Cu-Nb and Cu-Bi, mixing occurs at 6 but not at 295 K. For a system which is not miscible in either the solid or liquid state, mixing does not occur at either 6 or 295 K. Mixing was also measured in pure Cu isotope bilayer specimens,63Cu–65Cu, to provide a standard for the other measurements. The results are interpreted on the basis of an atomistic model of ion beam mixing. The model assumes that point defects are created in the initial phases of the cascade evolution, and that these defects migrate during the later ‘thermal spike’ phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01177164
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  • 7
    Electronic Resource
    Electronic Resource
    Influence of laser fluence and dopant gas pressure on properties of photochemical doping of Si into GaAs using XeCl excimer Laser (1988)
    Springer
    Applied physics 45 (1988), S. 189-192 
    Details
    ISSN: 1432-0630
    Keywords: 66.30 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Silicon doping into GaAs has been performed with the combination of pulsed XeCl excimer laser (wavelength: 308 nm) and silane gas (SiH4). Sheet resistances and depth profiles of the Si-doped GaAs as the functions of laser fluence, the number of laser pulses and gas pressure have been measured in order to make clear the relation between properties of doped GaAs and irradiation conditions. The secondary ion mass spectroscopy (SIMS) has revealed that the depth of Si in GaAs is limited in such a very shallow region (30–110 nm) that might be controlled easily by irradiation conditions. The efficiency for carrier generation of Si in GaAs with laser fluence is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615003
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  • 8
    Electronic Resource
    Electronic Resource
    Reaction of evaporated Ti films with large-grained Al substrates (1988)
    Springer
    Applied physics 46 (1988), S. 35-38 
    Details
    ISSN: 1432-0630
    Keywords: 73.40 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have studied the reaction kinetics of titanium films on large-grained aluminium substrates during furnace annealing in vacuum for temperatures between 450–550°C. Oxygen was profiled by elastic resonance16O(α, α)16O backscattering. A TiAl3 aluminide layer always forms at the Ti/Al interface. In addition, a second TiAl3 layer grows at the free Ti surface when the contamination of the annealing ambient by oxygen-carrying species is reduced during annealing. Otherwise, the nucleation of the second compound layer is inhibited by an oxygen-rich surface layer of the Ti.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615135
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  • 9
    Electronic Resource
    Electronic Resource
    Diffusion of deuterium in GaAs from a molecular gas source (1988)
    Springer
    Applied physics 47 (1988), S. 309-311 
    Details
    ISSN: 1432-0630
    Keywords: 72.80 E ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract It is shown for the first time that deuterium can diffuse into GaAs from a gaseous source. Experiments performed at 500° C show two-component diffusion profiles with diffusion coefficients in the range 10−15−4×10-1cm2s−1 depending on the conductivity type of the samples. These diffusion coefficients are considerably lower than those determined after RF plasma hydrogenation. Such a slow diffusion process is related to the reaction of molecular deuterium with the sample surface leading to the dissociation of the deuterium molecules.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615937
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  • 10
    Electronic Resource
    Electronic Resource
    NMR relaxation times and proton motion in HxWO3 (1989)
    Springer
    Applied physics 49 (1989), S. 65-68 
    Details
    ISSN: 1432-0630
    Keywords: 66.30 ; 76.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The relaxation timesT 1,T 1q,T 1D, andT 2 for1H in the tetragonal-A phase of HxWO3 have been measured over the temperature range 190 to 490 K. The1H relaxation behaviour appears to be governed by diffusion over inequivalent jump distances, approximating to a short range planar diffusion and a long range isotropic diffusion. Parameters for the latter motion are estimated asE a = 68 kJ/mol andτ 0=2.5×10−13 s. The powder X-ray diffraction pattern for this phase of HxWO3 has been studied over the temperature range 300–470 K. The tetragonal distortion diminishes with temperature and H0.43 WO3 becomes cubic at about 435 K. Volumetric studies of hydrogen evolution show that decomposition accelerates at approximately this temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615466
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