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  • Articles  (3)
  • Adsorption  (3)
  • Springer  (3)
  • International Union of Crystallography (IUCr)
  • 2020-2020
  • 1970-1974  (3)
  • 1945-1949
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (3)
  • Media Resources and Communication Sciences, Journalism
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  • Articles  (3)
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  • Springer  (3)
  • International Union of Crystallography (IUCr)
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (3)
  • Media Resources and Communication Sciences, Journalism
  • Physics  (4)
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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 1 (1973), S. 301-310 
    ISSN: 1432-0630
    Keywords: Adsorption ; Electron induced desorption ; Mass spectrometry
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Electron induced desorption of hydrogen on polycrystalline platinum has been studied in continuation of former work. The results remain consistent with a supposed adsorption model implying that electron induced H+ emission is restricted to hydrogen adsorbed only at particular sites occupying not more than 1 per cent coverage. These sites are ascribed to characteristic and stable surface impurities which are not influenced by the improved target treatment applied. Depletion of sites by sputter cleaning is cancelled by recovery during annealing. The highest observed H+ yield (all available sites filled with hydrogen) is 2 · 10−5 ions per electron. The total cross section for desorption by electron impact is 2 · 10−17 cm2. Complex interaction phenomena between the electrons and the hydrogen covered platinum surface have been observed.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 4 (1974), S. 265-270 
    ISSN: 1432-0630
    Keywords: Adsorption ; Field emission
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Aluminum oxide deposited on a clean rhenium field emission microscope tip at room temperature starts to migrate on the metal surface at about 600° C. Various face specific layer formations occur above this temperature. They either increase or decrease the local electron emission. Complete desorption of the aluminum oxide is obtained at about 1350°C. The remaining oxygen can be removed by heating at 1900°C. Average work function changes are discussed together with the corresponding FEM patterns of the various adsorption stages. Comparisons are made with the adsorption system aluminum oxide on tungsten.
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  • 3
    ISSN: 1432-0630
    Keywords: Field electron emission ; Adsorption
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract After deposition of aluminum oxide on a tungsten field emission microscope (FEM) tip and stepwise heating, three stages of emission changes were observed on {100}. Stages I and II cause work function decreases of 0.28 and 0.07 eV, respectively. Stage III is characterized by a large increase (Δϕ≃+3 eV). The changes are discussed in terms of interaction of decomposition products (oxygen and aluminum) and adsorption of aluminum oxide. On {110} only a single aluminum oxide layer growth, which results in a work function decrease to ϕ=4.69 eV, is observed. The field electron emission from this layer was measured between 1400°K and room temperature. The experimental values were compared with those determined from Christov's unified theory of field and thermionic emission. The {110} layer values coincide with those obtained earlier from an aluminum oxide covered tungsten {112}.
    Type of Medium: Electronic Resource
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