Publication Date:
2018-07-26
Description:
Author(s): J. Forneris, S. Ditalia Tchernij, P. Traina, E. Moreva, N. Skukan, M. Jakšić, V. Grilj, F. Bosia, E. Enrico, G. Amato, I.P. Degiovanni, B. Naydenov, F. Jelezko, M. Genovese, and P. Olivero Diamond is a promising material for innovative electronic devices, radiation detectors, and integrated platforms for quantum technologies, but with a major hurdle: Deep levels in diamond’s band gap act as charge-carrier traps, causing electric-field inhomogeneities and memory effects. Conventional techniques cannot provide a direct, unambiguous picture of the local field distribution in the defective material. This study use the sensitivity of the native nitrogen-vacancy defect itself to measure the local internal electric field, for a clear view of the inner workings of diamond devices. [Phys. Rev. Applied 10, 014024] Published Wed Jul 25, 2018
Electronic ISSN:
2331-7019
Topics:
Physics
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