Publikationsdatum:
2017-09-29
Beschreibung:
Author(s): Hugo Henck, Zeineb Ben Aziza, Olivia Zill, Debora Pierucci, Carl H. Naylor, Mathieu G. Silly, Noelle Gogneau, Fabrice Oehler, Stephane Collin, Julien Brault, Fausto Sirotti, François Bertran, Patrick Le Fèvre, Stéphane Berciaud, A. T. Charlie Johnson, Emmanuel Lhuillier, Julien E. Rault, and Abdelkarim Ouerghi Hybrid heterostructures based on bulk GaN and two-dimensional (2D) materials offer novel paths toward nanoelectronic devices with engineered features. Here, we study the electronic properties of a mixed-dimensional heterostructure composed of intrinsic n -doped Mo S 2 flakes transferred on p -doped GaN(... [Phys. Rev. B 96, 115312] Published Thu Sep 28, 2017
Schlagwort(e):
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Digitale ISSN:
1095-3795
Thema:
Physik
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