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  • Articles  (17,661)
  • American Institute of Physics (AIP)  (15,487)
  • American Meteorological Society  (2,174)
  • 2010-2014  (17,661)
  • 2005-2009
  • 2000-2004
  • 2014  (17,661)
  • Physics  (17,661)
  • Geosciences  (1,698)
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  • Articles  (17,661)
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  • 2010-2014  (17,661)
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  • 2000-2004
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  • 1
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    The influence of charge injection from intermediate connectors on the performance of tandem organic light-emitting devices (2014)
    American Institute of Physics (AIP)
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    Publication Date: 2014-12-13
    Description: Charge generation in a typical intermediate connector, composed of “n-type doped layer/transition metal oxide (TMO)/hole transporting layer (HTL),” of a tandem organic light-emitting device (OLED) has recently been found to arise from charge transfer at the TMO/HTL interfaces. In this paper, we investigate the effect of hole injection barriers from intermediate connectors on the performance of tandem OLEDs. The hole injection barriers are caused by the offset of the highest occupied molecular orbital (HOMO) energy levels between HTLs contained in the intermediate connector and the top electroluminescence (EL) unit. We also find that although charge generation can occur at the interfaces between the TMO and a wide variety of HTLs of different HOMO values, an increase in the hole injection barrier however limits the electroluminescence efficiency of the top EL units. In the case of large hole injection barriers, significant charge accumulation in the HTLs makes the intermediate connector lose its functionality gradually over operating time, and limits device stability.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 2
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    Effect of electron trap states on spin-dependent transport characteristics in CoFe/MgO/n+-Si junctions investigated by Hanle effect measurements and inelastic electron tunneling spectroscopy (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-12-09
    Description: Spin-dependent transport properties in CoFe/MgO/n + -Si junctions were investigated by Hanle effect measurements and inelastic electron tunneling (IET) spectroscopy. The CoFe/MgO/n + -Si junctions examined in this study exhibited two different Hanle curves. In the low bias region, broad Hanle signals were mainly observed; in the high bias region, narrow Hanle signals were mainly observed. The d 2 I / dV 2 - V curves (which correspond to IET spectra) contain several peaks originating from phonon modes and other peaks originating from electron trap states. At the bias voltage where electron trap states are observed, Δ d 2 I / dV 2 depends on the magnetic field and the full width at half-maximum of the Δ d 2 I / dV 2 – H curves corresponds to that of the broad Hanle signals. These results indicate that electron trap states are located in the low energy region and cause a decrease in spin lifetime.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 3
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    Carrier thermalization under stimulated emission in In0.17Ga0.83N epilayer at room temperature (2014)
    American Institute of Physics (AIP)
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    Publication Date: 2014-12-09
    Description: We elucidate a strong room temperature stimulated emission (SE) of In 0.17 Ga 0.83 N epilayer grown by molecular beam epitaxy under the subpicosecond pulse excitation. The SE peak at 428 nm emerges on the higher energy side of the spontaneous emission in photoluminescence spectra when the excitation density exceeds the threshold of ∼3.68 mJ/cm 2 . Nondegenerate transient differential reflectivity measurements show that a multi-stage carrier thermalization from excited states to localized edge states and stimulated emission dominate the decay processes of photogenerated carriers under various excitation densities. Our results indicate that the existence of phonon bottleneck effect could result in a slow thermalization process in the InGaN material even under the condition of stimulated emission.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 4
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    Frustrated incomplete donor ionization in ultra-low resistivity germanium films (2014)
    American Institute of Physics (AIP)
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    Publication Date: 2014-12-09
    Description: The relationship between carrier concentration and donor atomic concentration has been determined in n -type Ge films doped with P. The samples were carefully engineered to minimize non-active dopant incorporation by using specially designed P(SiH 3 ) 3 and P(GeH 3 ) 3 hydride precursors. The in situ nature of the doping and the growth at low temperatures, facilitated by the Ge 3 H 8 and Ge 4 H 10 Ge sources, promote the creation of ultra-low resistivity films with flat doping profiles that help reduce the errors in the concentration measurements. The results show that Ge deviates strongly from the incomplete ionization expected when the donor atomic concentration exceeds N d  = 10 17  cm −3 , at which the energy separation between the donor and Fermi levels ceases to be much larger than the thermal energy. Instead, essentially full ionization is seen even at the highest doping levels beyond the solubility limit of P in Ge. The results can be explained using a model developed for silicon by Altermatt and coworkers, provided the relevant model parameter is properly scaled. The findings confirm that donor solubility and/or defect formation, not incomplete ionization, are the major factors limiting the achievement of very high carrier concentrations in n -type Ge. The commercially viable chemistry approach applied here enables fabrication of supersaturated and fully ionized prototypes with potential for broad applications in group-IV semiconductor technologies.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 5
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    Reduction of skin effect losses in double-level-T-gate structure (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-12-09
    Description: We developed a T-gate technology based on selective wet etching yielding 200 nm wide T-gate structures used for fabrication of High Electron Mobility Transistors (HEMT). Major advantages of our process are the use of only standard photolithographic process and the ability to generate T-gate stacks. A HEMT fabricated on AlGaN/GaN/sapphire with gate length L g  = 200 nm and double-stacked T-gates exhibits 60 GHz cutoff frequency showing ten-fold improvement compared to 6 GHz for the same device with 2  μ m gate length. HEMTs with a double-level-T-gate (DLTG) structure exhibit up to 35% improvement of f max value compared to a single T-gate device. This indicates a significant reduction of skin effect losses in DLTG structure compared to its standard T-gate counterpart. These results agree with the theoretical predictions.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 6
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    Wake effects on drift in two-dimensional inviscid incompressible flows (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-12-12
    Description: This investigation analyzes the effect of vortex wakes on the Lagrangian displacement of particles induced by the passage of an obstacle in a two-dimensional incompressible and inviscid fluid. In addition to the trajectories of individual particles, we also study their drift and the corresponding total drift areas in the Föppl and Kirchhoff potential flow models. Our findings, which are obtained numerically and in some regimes are also supported by asymptotic analysis, are compared to the wakeless potential flow which serves as a reference. We show that in the presence of the Föppl vortex wake, some of the particles follow more complicated trajectories featuring a second loop. The appearance of an additional stagnation point in the Föppl flow is identified as a source of this effect. It is also demonstrated that, while the total drift area increases with the size of the wake for large vortex strengths, it is actually decreased for small circulation values. On the other hand, the Kirchhoff flow model is shown to have an unbounded total drift area. By providing a systematic account of the wake effects on the drift, the results of this study will allow for more accurate modeling of hydrodynamic stirring.
    Print ISSN: 1070-6631
    Electronic ISSN: 1089-7666
    Topics: Physics
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  • 7
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    Anomalous magnetic configuration of Mn2NiAl ribbon and the role of hybridization in the martensitic transformation of Mn50Ni50−xAlx ribbons (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-12-09
    Description: The magnetic configuration of Mn 2 NiAl ribbon has been investigated. In contrast to Ni 2 MnAl, the compound Mn 2 NiAl with considerable disorder does exhibit ferromagnetism and, due to exchange interaction competition, both ferromagnetic and antiferromagnetic moment orientations can coexist between nearest neighbor Mn atoms. This is unexpected in Heusler alloys. Regarding the mechanism of the martensitic transformation in Mn 50 Ni 50− x Al x , it is found that increasing the Al content results in an unusual change in the lattice constant, a decrease of the transformation entropy change, and enhancement of the calculated electron localization. These results indicate that the p-d covalent hybridization between Mn (or Ni) and Al atoms gradually increases at the expense of the d-d hybridization between Ni and Mn atoms. This leads to an increased stability of the austenite phase and a decrease of the martensitic transformation temperature. For 11 ≤  x  ≤ 14, Mn 50 Ni 50− x Al x ferromagnetic shape memory alloys are obtained.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
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  • 8
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    Continuous electrowetting at the low concentration electrolyte-insulator-semiconductor junction (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-12-09
    Description: Electrowetting (EW) has applications including displays, microactuation, miniaturized chemistry, adaptive optics, and energy harvesting—understanding the physics of EW junctions is of key importance. Here, the roles of semiconductor space-charge and electric double layer in continuous EW at an electrolyte-insulator-semiconductor junction are considered. A model is formulated in terms of experimental parameters—applied voltage, zero-bias wetting contact angle, semiconductor type and doping, insulator thickness and dielectric constant, and electrolyte concentration and dielectric constant. The model predicts, and experiments indicate, that the EW behavior is diminished for low concentration solutions (∼1–10 nM) and lowly doped silicon (10 14 –10 15  cm −3 ).
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
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  • 9
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    Effect of the helicity injection rate and the Lundquist number on spheromak sustainment (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-12-12
    Description: The dynamics of the magnetic relaxation process during the sustainment of spheromak configurations at different helicity injection rates is studied. The three-dimensional activity is recovered using time-dependent resistive magnetohydrodynamic simulations. A cylindrical flux conserver with concentric electrodes is used to model configurations driven by a magnetized coaxial gun. Magnetic helicity is injected by tangential boundary flows. Different regimes of sustainment are identified and characterized in terms of the safety factor profile. The spatial and temporal behavior of fluctuations is described. The dynamo action is shown to be in close agreement with existing experimental data. These results are relevant to the design and operation of helicity injected devices, as well as to basic understanding of the plasma relaxation mechanism in quasi-steady state.
    Print ISSN: 1070-664X
    Electronic ISSN: 1089-7674
    Topics: Physics
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  • 10
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    Filamentary structure of plasma produced by compression of puffing deuterium by deuterium or neon plasma sheath on plasma-focus discharge (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-12-12
    Description: The present experiments were performed on the PF-1000 plasma focus device at a current of 2 MA with the deuterium injected from the gas-puff placed in the axis of the anode face. The XUV frames showed, in contrast with the interferograms, the fine structure: filaments and spots up to 1 mm diameter. In the deuterium filling, the short filaments are registered mainly in the region of the internal plasmoidal structures and their number correlates with the intensity of neutron production. The longer filamentary structure was recorded close to the anode after the constriction decay. The long curve-like filaments with spots were registered in the big bubble formed after the pinch phase in the head of the umbrella shape of the plasma sheath. Filaments can indicate the filamentary structure of the current in the pinch. Together with the filaments, small compact balls a few mm in diameter were registered by both interferometry and XUV frame pictures. They emerge out of the dense column and their life-time can be greater than hundreds of ns.
    Print ISSN: 1070-664X
    Electronic ISSN: 1089-7674
    Topics: Physics
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