Publication Date:
2013-09-26
Description:
Author(s): Lin Zhou, E. Dimakis, R. Hathwar, Toshihiro Aoki, David J. Smith, T. D. Moustakas, S. M. Goodnick, and Martha R. McCartney Polarization fields associated with one-monolayer-thick InN/GaN multiple quantum wells (MQWs) cause shifts of the photoluminescence peak that depend on the GaN barrier layer thickness. Diffraction contrast and aberration-corrected scanning transmission electron microscopy show that the InN QWs are w... [Phys. Rev. B 88, 125310] Published Wed Sep 25, 2013
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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