ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Articles  (18)
  • 73.20.Dx  (18)
  • Springer  (18)
  • American Geophysical Union
  • American Institute of Physics (AIP)
  • American Physical Society
  • Blackwell Publishing Ltd
  • Institute of Physics
  • Oxford University Press
  • 1995-1999  (18)
  • 1945-1949
  • 1998  (18)
  • Physics  (18)
  • Natural Sciences in General
  • Electrical Engineering, Measurement and Control Technology
Collection
  • Articles  (18)
Source
Keywords
Publisher
  • Springer  (18)
  • American Geophysical Union
  • American Institute of Physics (AIP)
  • American Physical Society
  • Blackwell Publishing Ltd
    • +
Years
  • 1995-1999  (18)
  • 1945-1949
Year
Topic
  • Physics  (18)
  • Natural Sciences in General
  • Electrical Engineering, Measurement and Control Technology
  • 1
    Electronic Resource
    Electronic Resource
    Tunneling resonances in structures with a two-step barrier (1998)
    Springer
    JETP letters 67 (1998), S. 863-868 
    Details
    ISSN: 1090-6487
    Keywords: 73.40.Kp ; 73.20.Dx
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Electron transport through an asymmetric heterostructure with a two-step barrier N+GaAs/N−GaAs/Al0.4Ga0.6As/Al0.03Ga0.97As/N−GaAs/N+GaAs was investigated. Features due to resonance tunneling both through a size-quantization level in a triangular quantum well, induced by an external electric field in the region of the bottom step of the barrier (Al0.03Ga0.97As layer), and through virtual levels in two quantum pseudowells of different width are observed in the tunneling current. The virtual levels form above the bottom step or above one of the spacers (N−GaAs layer) as a result of interference of electrons, in the first case on account of reflection from the Al0.4Ga0.6As barrier and a potential jump at the Al0.03Ga0.97As/N−GaAs interface and in the second case — from the Al0.4Ga0.6As barrier and the potential gradient at the N−GaAs/N+GaAs junction, reflection from which is likewise coherent.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.567762
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Coulomb interaction during coherent transport of electrons in quantum wires (1998)
    Springer
    JETP letters 67 (1998), S. 196-202 
    Details
    ISSN: 1090-6487
    Keywords: 73.20.Dx ; 73.23.Hk
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A model is found whereby the Coulomb interaction during electron transport in quantum wires of finite length with current-lead contacts can be taken into account exactly (within the framework of the bosonization method). It is established that the charge density distribution along a wire in the case of the real Coulomb interaction is strongly different from the Luttinger liquid model, where the interaction is assumed to be short-ranged. The charge density near the contacts is found to be much higher than in the model with a short-range interaction, but away from the contacts the two densities are closer to each other.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.567650
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Large interference-induced increase in the intensity of quantum transitions in triple-barrier structures (1998)
    Springer
    JETP letters 67 (1998), S. 394-399 
    Details
    ISSN: 1090-6487
    Keywords: 42.55.Px ; 73.20.Dx
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A solution of the nonstationary Schrödinger equation describing the resonance interaction of electrons with a weak rf field is found for asymmetric triple-barrier resonance-tunneling structures with thin, high barriers, and an expression is obtained for the active weak-signal conductivity of such structures. It is found that in a number of cases the probability of quantum resonance transitions from an upper to a lower level can increase sharply when the lower levels are shifted relative to one another.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.567680
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Orbital magnetism in small quantum dots with closed shells (1998)
    Springer
    JETP letters 68 (1998), S. 915-921 
    Details
    ISSN: 1090-6487
    Keywords: 73.20.Dx ; 73.61.−r
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract It is found that various kinds of shell structure which occur at specific values of the magnetic field lead to the disappearance of the orbital magnetization for particular magic numbers in small quantum dots with electron number A〈30.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.567955
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Formation of zero-dimensional hole states during molecular-beam epitaxy of Ge on Si (100) (1998)
    Springer
    JETP letters 68 (1998), S. 135-141 
    Details
    ISSN: 1090-6487
    Keywords: 81.15.Hi ; 73.20.Dx ; 68.65.+g
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The characteristic features of electronic spectra in Ge/Si (100) heterostructures obtained by molecular-beam epitaxy are investigated by capacitance spectroscopy. It is observed that the self-organization of a Ge film into an island film when the effective germanium thickness exceeds six monolayers is accompanied by the appearance of hole bound states, which can be attributed to size quantization and the Coulomb interaction of carriers in the array of Ge quantum dots.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.567835
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Mesoscopic superconductivity in superspace (1998)
    Springer
    JETP letters 68 (1998), S. 673-678 
    Details
    ISSN: 1090-6487
    Keywords: 74.20.−z ; 73.20.Dx ; 74.25.Ha ; 11.30.Pb
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract In the theory of mesoscopic superconductivity it is necessary to supplement the coordinates x, y, z with some additional physical characteristics (coordinates) of free space. An adequate description of mesoscopic superconductivity is obtained by introducing a nonrelativistic version of Grassmann spinor coordinates, which are studied in supersymmetric field theories and convert ordinary space into superspace. An experimental check of the proposed description of the superconducting and magnetic properties of metallic nanoparticles would provide a direct confirmation of the concept of superspace.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.567927
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Magnetoexcitons in type-II quantum dots (1998)
    Springer
    JETP letters 68 (1998), S. 669-672 
    Details
    ISSN: 1090-6487
    Keywords: 71.35.Ji ; 73.20.Dx
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The ground state of a spatially indirect exciton in type-II quantum dots with a short-range potential acquires nonzero angular momentum in the presence of a magnetic field oriented perpendicular to the plane of the system. The critical magnetic field of the transition to a ground state with nonzero angular momentum depends on the radius of the quantum dot. Such a transition can be observed as quenching of luminescence by a magnetic field in quantum dots of the GaSb/GaAs system, for example.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.567926
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Spontaneous far-IR emission accompanying transitions of charge carriers between levels of quantum dots (1998)
    Springer
    JETP letters 67 (1998), S. 275-279 
    Details
    ISSN: 1090-6487
    Keywords: 85.30.Vw ; 73.20.Dx ; 78.30.Fs
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The spontaneous emission of far-infrared radiation (λ≅10–20 μm) from diode structures with vertically coupled InGaAs/AlGaAs quantum dots is observed. This emission is due both to transitions of holes and electrons between size-quantization levels in quantum dots and to transitions from the continuum to a level in a quantum dot. It is observed only when accompanied by lasing at short wavelengths (λ≅0.94 μm) and, like the short-wavelength emission, it exhibits a current threshold. The spontaneous emission of long-wavelength radiation is also observed in InGaAs/GaAs quantum-well laser structures. This radiation is approximately an order of magnitude weaker than that from quantum-dot structures, and it has no current threshold.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.567663
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Transition between non-Fermi-liquid and Fermi-liquid states as a result of tunneling (1998)
    Springer
    JETP letters 67 (1998), S. 1069-1075 
    Details
    ISSN: 1090-6487
    Keywords: 71.10.Hf ; 71.27.+a ; 73.20.Dx
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract It is shown that additional scattering due to tunneling induces a transition of the system from a non-Fermi-liquid into a Fermi-liquid state as the distance between the Fermi level in the walls and the 2D-band edge is varied in a double-barrier quantum well, doped with transition-metal impurities and having an intrinsic two-dimensional continuum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.567794
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Terahertz emission from square wells in a longitudinal electric field (1998)
    Springer
    JETP letters 67 (1998), S. 533-538 
    Details
    ISSN: 1090-6487
    Keywords: 78.66.Fd ; 73.20.Dx
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Terahertz emission accompanying heating of two-dimensional electrons by a strong electric field applied along size-quantized GaAs/AlGaAs layers is observed and investigated. The emission is due to indirect optical transitions of hot electrons in the bottom size-quantization band. The experimentally obtained emission spectra are compared with the spectra calculated taking into account scattering of electrons by optical phonons, impurities, and interfacial roughness and electron-electron scattering. Satisfactory agreement is obtained. The temperature of the hot electrons is determined from a comparison of the spectra.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.567720
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 11
    Electronic Resource
    Electronic Resource
    Intraband population inversion and amplification of IR radiation through charge-carrier injection into quantum wells and quantum dots (1998)
    Springer
    JETP letters 68 (1998), S. 417-425 
    Details
    ISSN: 1090-6487
    Keywords: 73.20.Dx ; 42.50.Gy ; 33.80.Be
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A mechanism is proposed for obtaining intraband population inversion of electrons in size-quantization levels through the injection of electron-hole pairs into the i region of a heterostructure with quantum wells or quantum dots. Key elements of the mechanism are the simultaneous generation of interband (hv≈E g ) near-IR radiation and the presence of a “metastable” level. In quantum wells such a level can be produced by making use of the weak overlap of the wave functions of electrons in the levels of a quantum well of complicated configuration and exploiting the characteristic features of the interaction of electrons with optical phonons in polar semiconductors. In quantum dots such a level forms as a result of the phonon bottleneck effect. Estimates are made of the gain for mid-IR radiation in intraband optical transitions of electrons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.567883
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 12
    Electronic Resource
    Electronic Resource
    Direct STM observation of electronic structure modification of naphthacenequinone molecules due to photoisomerization (1998)
    Springer
    JETP letters 68 (1998), S. 521-526 
    Details
    ISSN: 1090-6487
    Keywords: 73.61.Ph ; 73.50.−h ; 73.20.Dx
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Light-induced conformational transformations of the naphthacenequinone (NQ) molecules are observed by scanning tunneling microscopy (STM). NQ molecules packed in a Langmuir-Blodgett (LB) film are shown to form stable ordered structures on a surface of highly oriented pyrolytic graphite (HOPG). The local density of electronic states is found to exhibit the distinct peak which is characteristic of two-dimensional conductivity. An additional subband of empty electronic states is found for NQ molecules in form A but not in form B. The constant-height STM images of individual molecules in form A demonstrate an additional structure that is indicative of a conformational transition of the NQ molecules. This transition involves the transfer of the phenoxy group from one oxygen to another.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.567900
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 13
    Electronic Resource
    Electronic Resource
    Current filamentation in GaAs/AlGaAs heterojunctions preceding quantum-Hall-effect breakdown (1998)
    Springer
    JETP letters 68 (1998), S. 732-737 
    Details
    ISSN: 1090-6487
    Keywords: 73.20.Dx ; 73.40.Hm ; 75.70.Cn
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Self-induced filamentation of the current near the edges of a sample in the Hall geometry has been observed in the quantum-Hall-effect regime in a two-dimensional electronic system arising near a GaAs/AlGaAs heterojunction. If in the case of integer values of the filling factor ν averaged over the sample the currents flowing along opposite edges are approximately the same, then away from such a value within the quantum plateau the current is increasingly concentrated near that edge of the sample where the local value of ν is closer to being an integer. When the direction of the magnetic field or of the current changes, the filament switches to the opposite edge of the sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.567937
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 14
    Electronic Resource
    Electronic Resource
    Field-asymmetric transverse magnetoresistance in a nonmagnetic quantum-size structure (1998)
    Springer
    JETP letters 68 (1998), S. 404-411 
    Details
    ISSN: 1090-6487
    Keywords: 72.15.Gd ; 72.20.My ; 73.20.Dx
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A new phenomenon is observed experimentally in a heavily doped asymmetric quantum-size structure in a magnetic field parallel to the quantum-well layers — a transverse magnetoresistance which is asymmetric in the field (there can even be a channge in sign) and is observed in the case that the structure has a built-in lateral electric field. A model of the effect is proposed. The observed asymmetry of the magnetoresistance is attributed to an additional current contribution that arises under nonequilibrium conditions and that is linear in the gradient of the electrochemical potential and proportional to the parameter characterizing the asymmetry of the spectrum with respect to the quasimomentum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.567881
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 15
    Electronic Resource
    Electronic Resource
    Magnetic-field-induced hybridization of electron subbands in a coupled double quantum well (1998)
    Springer
    JETP letters 67 (1998), S. 595-601 
    Details
    ISSN: 1090-6487
    Keywords: 73.20.Dx ; 73.40.Hm
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We employ a magnetocapacitance technique to study the spectrum of the soft two-subband (or double-layer) electron system in a parabolic quantum well with a narrow tunnel barrier at the center. In this system, when unbalanced by gate depletion, two sets of quantum oscillations are observed at temperatures T≳30 mK: one originates from the upper electron subband in the closer-to-the-gate part of the well, and the other indicates the existence of common gaps in the spectrum at integer fillings. For the lowest filling factors υ=1 and υ=2, both the presence of a common gap down to the point of the one-to two-subband transition and their nontrivial magnetic field dependences point to magnetic-field-induced hybridization of electron subbands.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.567732
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 16
    Electronic Resource
    Electronic Resource
    Interwell radiative recombination in the presence of random potential fluctuations in GaAs/AlGaAs biased double quantum wells (1998)
    Springer
    JETP letters 67 (1998), S. 613-620 
    Details
    ISSN: 1090-6487
    Keywords: 78.66.Fd ; 73.20.Dx
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The interwell radiative recombination from biased double quantum wells (DQW) in pin GaAs/AlGaAs heterostructures is investigated at different temperatures and external electrical fields. The luminescence line of interwell recombination of spatially separated electron-hole pairs exhibits systematic narrowing with temperature increase from 4.5 to 30 K. A theoretical model is presented which explains the observed narrowing in terms of lateral thermally activated tunneling of spatially separated e-h pairs localized by random potential fluctuations in the quantum wells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.567735
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 17
    Electronic Resource
    Electronic Resource
    Excitons and excitonic complexes in GaAs/AlGaAs quantum wells with a low-density quasi-two-dimensional electron and hole channel (1998)
    Springer
    JETP letters 67 (1998), S. 744-750 
    Details
    ISSN: 1090-6487
    Keywords: 73.20.Dx ; 71.35.Cc
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The recombination spectra of excitons and excitonic complexes in un-doped GaAs/AlGaAs single quantum wells are investigated. It is shown on the basis of a study of the magnetic-field dependence of the emission spectra and the degree of optical orientation in zero magnetic field and on the basis of electrooptic measurements that not only the density but also the sign of the charge carriers in a well depend strongly on the photoexcitation energy. It is shown on the basis of a comparative analysis of the spin splitting of the recombination lines of free and bound excitons that the recombination line which was attributed earlier to a positively charged exciton corresponds to the recombination of an exciton bound on a neutral acceptor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.567741
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 18
    Electronic Resource
    Electronic Resource
    Self-excitation of 2D plasmons in resonant tunneling diodes (1998)
    Springer
    JETP letters 68 (1998), S. 662-668 
    Details
    ISSN: 1090-6487
    Keywords: 85.30.Mn ; 73.20.Dx ; 73.20.Mf
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Resonant tunneling is accompanied by the accumulation of 2D electrons in the quantum well between the barriers of resonant tunneling diodes. In high-quality structures this gives a Z-shaped current-voltage characteristic, and it is shown that self-excitation of 2D plasmons occurs in this quantum well for any external circuit at completely realistic parameters of the structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.567925
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...