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  • Articles  (101)
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  • 1995-1999  (101)
  • 1995  (101)
  • Electrical Engineering, Measurement and Control Technology  (101)
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  • Articles  (101)
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  • Wiley-Blackwell  (101)
  • American Meteorological Society
  • PANGAEA
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  • 1995-1999  (101)
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  • 1
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 75-75 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
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  • 2
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 127-137 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: Regular boundary integral elements are employed for the dual and complementary variational formulations of Laplace problems. The problems are defined only on the boundary as usual, but as in the manner of charge simulation method (CSM), the source terms are arranged outside the domain so that the singular integral can be avoided. The Laplace problems are analysed and the usefulness of the formulation is discussed in comparison with direct BEM. The scalar potential and electric displacement vector potential functions are used in the dual and complementary formulations, with which the upper and lower bounds of the system energy or the capacitance can also accurately be evaluated.
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  • 3
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    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 150-150 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
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  • 4
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    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 51-60 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: Simulators in power electronics are less developed than in other electronic fields. The main modelling methods are between the numerical simulation of semiconductor device equations that hardly simulate circuits, and equivalent circuit models that show poor accuracy. We propose the application of the bond graph techniques to model modular power semiconductor devices. Furthermore, the IGBT is a new power device which combines a bipolar transistor with a MOSFET transistor. We develop a new IGBT bond graph model. The bond graph techniques give us good primary simulation results. We present in this paper the principle and the results of this modelling method.
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  • 5
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    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 357-366 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: The Transmission line modelling (TLM) technique was used to simulate the class E power amplifier. An analytical method is also used to fix the required component values to ensure the desired output performance of the amplifier. An experiment was carried out to verify the simulation result of the combined method.
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  • 6
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    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 381-381 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
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  • 7
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    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 399-416 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: A non-stationary longitudinal model of a thermal two-component plasma is investigated with numerical methods based on so-called high-resolution schemes. The inhomogeneous model system is solved numerically applying a splitting method, where the homogeneous conservation laws for the electrons and ions are approximated by explicit Godunov-type schemes. Coupling of both plasma components is achieved by the electric field, which is also calculated in an explicit manner after reformulating Coulomb's law. A new numerical method is proposed for the expansion of the plasma into the vacuum. This tracking method is based on the solution of the vacuum Riemann problem and avoids the difficulties of numerical approximation introduced by the vacuum where the longitudinal plasma model is not valid. This new approach of tracking resolves sharply the plasma vacuum interface and captures this boundary very well during the temporal evolution of the model system. Two test problems show the interplay, the quality and properties of the approximation methods applied.
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  • 8
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 455-455 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
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  • 9
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    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 447-454 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: A novel procedure for synthesizing multilayered radar absorbing materials (RAMs) is presented. The procedure uses a method for global minimization of multimodal functions of continuous variables based on simulated annealing (SA). The technique is very flexible and reliable, allowing the design of absorbing materials for any grazing or normal angles over the specified frequency bandwidth. The technique is particularly suitable for the efficient design of broadband RAMs and hence for EMC applications.
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  • 10
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 187-203 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: This document describes the background and motivation behind the PEPSE project. It describes separately the components which make up PEPSE, the parallel design philosophy and aspects of parallel implementation.
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  • 11
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 243-248 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: Two separate exercises on a similar theme are reported. In the first, the moment-method program NEC was extensively modified in order to optimize its performance on a four-processor Cray X-MP computer. In the second exercise, the MININEC moment-method program was completely rewritten into the occam programming language so that it could be executed directly by a transputer system. The NEC exercise exploited judicious use of vectorization and alternative parallelization techniques and achieved a reduction of run times by factors of about five or more. The MININEC exercise has so far achieved only a modest reduction in run-time but it has the potential for a much greater improvement if an optimum strategy for configuring the transputer network is implemented.
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  • 12
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 277-281 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: A parallel implementation of the finite difference time-domain algorithm for the analysis of planar microwave circuits is presented in this paper. For this the FDTD mesh is divided in equal-sized subspaces. Every processor of the parallel computer calculates the field in one subspace. Furthermore detailed efficiency investigations are made to predict the timing performance of the parallel FDTD simulator.
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  • 13
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 293-299 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: In this paper a parallel algorithm is created for solving electromagnetic wave scattering problems. The algorithm based on the finite difference time-domain (FDTD) representation of the Maxwell's equations written in 3L Parallel Fortran for use on a transputer array.The problem simulated consists of a space (air) where a spherical dielectric scatterer is located. This space is subdivided into fine equisize meshes extending throughout the 3-D domain; the excitation wave is of sinusoidal form. Geometric decomposition is used as the principal algorithm strategy.Results are presented for the performance of the classical sequential algorithm and compared with the parallel algorithm in terms of computational speed-up.
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  • 14
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    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 221-232 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: This paper describes a parallel three-dimensional finite difference time-domain (FDTD) code for electromagnetic field simulation that has been developed for the Connection Machine (CM-2). The CM-2 is briefly discussed. Then the FDTD method is reviewed using a one-dimensional example, and the extensions required for the 3-D case are outlined. The parallelization of the FDTD method is considered, and a simple analytical timing model is dervied. This model predicts the efficiency of the parallelized algorithm as a function of grain size. Some specific points relating to the implementation of the parallel FDTD algorithm in Fortrans-90 on the CM-2 are discussed. Timing data for the parallel 3-D FDTD code measured on a CM-2 is presented and compared qualitatively with the theoretical model. These results are then put into perspective for a particular computations electromagnetics problem, viz. the development of software tools for full-wave modelling of 3-D optical devices. Finally, we draw some conclusions about this work.
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  • 15
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 265-275 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: Parallel algorithms for the finite difference time-domain (FDTD), the planar generalized Yee (PGY), and the finite element time-domain (FETD) methods are presented. The FDTD and the PGY algorithms are both explicit time-domain solutions of Maxwell's equations, while the PGY algorithm is based on an unstructured grid. The FETD algorithm is a semi-implicit solution of Maxwell's equations using variational principles, and thus requires a matrix inversion for every time iteration. The three parallel algorithms are based on spatial decompositions of the discrete three-dimensional problem spaces. A comparative analysis of the parallel algorithms is presented based on their memory and computational efficiency as well as their parallel efficiency.
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  • 16
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 313-313 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
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  • 17
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 1-1 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
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  • 18
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 29-49 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: This paper describes a phase model of an induction motor based on Transmission-Line Modelling technique. Its main advantage compared to the existing TLM d-q model is the possibility of using a small part of the stator self-inductance of each pahase as a link model to connect the motor to external sources and drives. Unlike the d-q model, the phase model does not therefore require any additional components for connection purposes. The application of the phase model is demonstrated by and example representing a traction drive ciruit. Identical simulation results to those obtained from a different study based on a d-q model are derived.
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  • 19
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 61-71 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: An analogy is described between the TLM algorithm and discrete state-space control theory. The analogy is used to derive the characteristic equations corresponding to parametrized model structures. Characteristic equations corresponding to several widely used node structures are derived by this means and found to be consistent with the observed behaviour of corresponding TLM models. An example is given of the use of the analogy in teh predictive mode.
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  • 20
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 95-107 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: In this work, we show the implementation of two explicit three-dimensional finite-difference beam propagation methods (BPM) on two different parallel computers, namely a transputer array and a Connection Machine (CM). To assess the performance of using parallel computers, serial computer codes of the two methods have ben implemented and a comparison between the speed of the serial and paralledl codes has been made. Large gains in the speed of the paralled FD-BPMs has been obtained compared to the serial implementations. In addition, a comparison between the performance of the transputer array and the CM in executing the two FD-BPMs has been discussed. Finally, to assess and compare the two methods, three different rib waveguides and three different directional couplers have been analysed and the results compared with published results.
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  • 21
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 139-147 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: This paper presents a circuit-based model of a current carrying conductor that can provide instantaneous ohmic losses under surge conditions. The model is frequency independent and can be used to calculate transient current characteristics of surges on overhead transmission lines. The theoretical current distribution under lightning surge conditions is used to demonstrate the validity of the model and the results are compared with values obtained using a finite element analysis package. There is a good correlation between the two methods with the circuit-based model having the advantages of being less cumbersome, requiring shorter computation time and being simple to implement in transient analysis packages.
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  • 22
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 331-340 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: This paper presents a new method in TLM for very efficient computation of highly conducting thin shielding walls. Firstly, the impulse response of a finite conducting sheet is computed analytically via inverse Laplace transform. Subsequently, a recursive convolution integral is formulated with the analytical impulse response. This allows a very efficient and accurate calculation of the diffusion process through imperfectly conducting walls.
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  • 23
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 382-383 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
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  • 24
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 417-429 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: The scattering of conducting regular polyhedrons of resonant size is studied by means of the electrical field integral equation (EFIE) and the method of moments (MoM). Two models are generated for each polyhedron, a wire grid model and a triangular patch model. Two numerical codes associated with those modelling techniques are used to obtain the radar cross section (RCS) of the polyhedrons. The calculated results are compared with the analytical results of the scattering of a perfectly conducting sphere. Practical criteria relating geometric properties of the sphere and the polyhedrons are investigated for the modelling of curved surfaces by facets in electromagnetic simulations.
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  • 25
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 431-445 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: The paper presents the application of nonlinear neural optimization networks to solve the linear complementarity problem. Two different approaches are presented and investigated: one leading to linear and the second to quadratic optimization programming. The numerical results of illustrative examples are given and discussed.
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995) 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
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  • 27
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 153-168 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: In electromagnetics, a numerical technique that finds immense application is the method of moments. This method reduces the boundary value problem containing integro-differential equations into the form AX = Y, where A is a full complex matrix, that is known and X is the unknown to be solved for the given excitation Y. In this paper, the matrix equation has been solved on various computers such as the VAX 3500, VAX 8530, Multimax 320, Alliant FX/80 and IBM 3090-600E. Two of the established methods, viz. gaussian elimination and the conjugate gradient method have been used to solve the above matrix equations. A detailed timing analysis has been done to bring out the features of various computer architectures.
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 233-242 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: This paper examines the use of parallel processing techniques for the electromagnetic field analysis of multilayered microwave interconnects. These techniques are applied to a full-wave formulation using an integral equation approach in the frequency domain. In order to demonstrate the feasibility of parallelization and to assess its performance advantages, several variations of the computer code have been developed. Performance tests using domain partitioning and load balancing were conducted on a 32-processor shared-memory machine (KSR1).
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 249-263 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: The planar generalized Yee (PGY) algorithm is an extension of the generalized Yee algorithm and the discrete surface integral (DSI) methods, which are based on explicit time-marching solutions of Maxwell's equations. Specifically, the PGY algorithm exploits the planar symmetries of printed microwave circuit devices, achieving great savings in both CPU time and memory. Since the PGY algorithm is an explicit method, it has a high degree of parallelism. To this end, a highly scalable parallel algorithm based on a spatial decomposition of the general unstructured mesh is presented. Two spatial decompositions are compared, the recursive inertia partitioning (RIP) algorithm and the Greedy algorithm. The Greedy algorithm provides optimal load balance, whereas the RIP algorithm more effectively minimizes shared boundary interface lengths. Through numerical examples, It is demostrated that the Greedy algorithm provides superior speedups. It is also demonstrated that the parallel PGY algorithm is a highly scalable algorithm.
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 283-291 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: The finite difference time-domain (FDTD) method is a well known numerical technique that has been used to solve electromagnetic boundary value problems. However, the method requires large computational resources to solve a problem, restricting its use on sequential computers to small problems.This has led to the use of expensive supercomputers in the past to solve larger problems. In this paper we first discuss existing parallel implementations of the FDTD method. We then describe an approach to compute the FDTD equations based on distributed- memory computer architectures. Finally we evaluate a low-cost parallel implementation of the FDTD method that runs on a network of Workstations, utilizing spare network capacity.
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 301-312 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: In this paper, the potential use of cellular automata machines for electromagnetic field solution is investigated. Cellular automata are computational models that operate on a discrete spatial lattice, evolve in discrete time, and employ simple discrete variables. We specifically examine the lattice gas automata which use simple variables to describe particles that interact with nearest neighbours on the lattice through simple rules. They are suitable for modelling the linear wave equation in two dimensions. A benefit of the cellular automata approach is that low-cost, special-purpose digital hardware exists for their efficient evaluation. The current state-of-the-art cellular automata machine is CAM-8. Computational experiments carried out on CAM-8 are provided for problems involving plane wave interaction with perfectly conducting and dielectric media in two dimensions. The examples indicate the potential use of lattice gas automata for modelling electromagnetics and their efficient evaluation using cellular automata machines.
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995) 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
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  • 33
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 3-12 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: This paper details the use of a circuit-based EM modelling technique combined with a harmonic balance simulator used to model the radiation from the microstrip bodies comprising an active antenna circuit. The modelling approach adopted for the planar bodies in the circuit will be shown to allow the use of concurrent algorithms in order to reduce overall computational time.
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  • 34
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 13-27 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: This paper presents an analysis of the numerical algorithms used to model microwave semiconductor devices. A comparison is made of the relative merits and features of the more popular finite difference schemes. A new generalized Scharfetter-Gummel formulation is presented which is compatible with drift diffusion and energy-transport formulations, and is suitable for implementing in two-dimensional simulations on personal computers. The treatment allows for fully degenerate semiconductors, but implementation for the nondegenerate situation is easily obtained as a special case. The convergence and stability properties of the generalized scheme are discussed. The simulation of a planar submicrometre gate length GaAs MESFET is used to illustrate the application of these algorithms.
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 73-73 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995) 
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    Keywords: Engineering ; Electrical and Electronics Engineering
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 109-125 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
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    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: This paper describes a computer program for generating finite element meshes for electron guns. Two new methods, the ‘projection’ and the ‘mesh density function’ methods, are used to generate the mesh. The new methods enable the mesh distribution to be set smothly and changed easily, and also enable the mesh distribution to be adjusted according to parameters associated with the gun configuration or by feedback from the electric field calculation. The new program, which can handle a large variety of complicated electron gun structures, has been used in conjunction with the SOGUN program which has been developed by Zhu and Munro for electron gun simulation.
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995) 
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    Keywords: Engineering ; Electrical and Electronics Engineering
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 341-356 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: A novel transmission-line model for the minority carrier transport through quasi-neutral arbitrarily doped layers is proposed. Based on detailed drift-diffusion equations, the novel TLEC includes the inductance that represents the influence of the relaxation-time term. Coupled with a object-orientated hybrid circuit simulator, the novel transmission-line model is implemented for the transient analysis of minority carrier transport. A substantial longer storage time of the minority carrier transient current at the collector end of ultra-narrow base is predicted owing to inclusion of the relaxation-time term.
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 367-379 
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    Keywords: Engineering ; Electrical and Electronics Engineering
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    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: The behaviours of parasitic bipolar transistors are investigated by exploring the physical mechanisms of negative resistance characteristics generated in a small-sized MOSFET structure. Physical experiments and three-dimensional simulations verify the expected negative resistance characteristics. The effects of variations of device parameters such as injected substrate current levels, doping concentrations, channel widths, and physical device sizes are investigated by simulation. According to simulation results, the operation of a parasitic bipolar transistor is initiated by the injected substrate current; this explains the negative resistance characteristics occurring at low operating voltages.
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 205-219 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: PMC-3D, a parallel three-dimensional (3-D) Monte Carlo device simulator for multicomputers is discussed. The parallel algorithm is and extension of the standard Monte Carlo device simulation model in three dimensions, that combines the stockastic Monte Carlo particle simulation method with a solution of Poisson equation for quasi-static problems, and full Maxwell's equations for microwave or electro-optic phenomena. While our implementation of the Poisson solver is based on an iterative method that uses and odd/even ordering with Chebyshev acceleration, a simple leapfrog method based upon the computational unit of Yee cell is used in a finite-difference, time-domain (FDTD) formulation to solve Maxwell's equations.The parallel algorithms were implemented on a 1024-node distributed memory nCUBE multicomputer. In this work, we present the application of PMC-3D to generate the static current-Voltage characteristics of GaAs MESFET, and to simulate photogenerated femtosecond electrical transients produced in coplanar stripline on a GaAs substrate.
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 74-74 
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    Keywords: Engineering ; Electrical and Electronics Engineering
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 77-94 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: A two-dimensional lossy shunt TLM node is incorporated into a TLM system and adapted to model for the first time the Maxwell field equations in thin semiconductor samples. Both the characteristics of the node and the TLM system itself are fully described. By considering a parallel-plate structure containing a thin GaAs sample, driven by a voltage source, it is shown, with an example, that this TLM technique can simulate the response of non-stationary electromagnetic fields in a semiconductor to applied excitations.
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 149-149 
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    Keywords: Engineering ; Electrical and Electronics Engineering
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 315-330 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: Transmission-line laser models (TLLMs) are time-domain models suitable for the simulation of complex phenomena in semiconductor lasers. TLLMs include time-domain filters based on transmission-line stubs to model the spectral dependence of the material gain. In this paper, numerical simulations are presented which show that the accuracy of these gain models is dependent on the model's iteration timestep. Analytical formulae are derived that relate the accuracy of the filters to the timestep, filter centre frequency, and filter bandwindth. A new wideband stub filter which allows the material gain to be modelled using a larger timestep is presented. This is equivalent to a digital infinite-impulse-response filter, which is more computationally efficient than finite-impulse-response filters, and is unconditionally stable. The new gain model can improve the computational speed for simulating for multimode Fabry-Perot lasers by a factor of 10-100.
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 383-383 
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    Keywords: Engineering ; Electrical and Electronics Engineering
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    Keywords: Engineering ; Electrical and Electronics Engineering
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 385-398 
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    Keywords: Engineering ; Electrical and Electronics Engineering
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    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: A typical application of numerical frequency-domain computations is the calculation of electromagnetic fields in cavities. Not only the field vectors of the desired modes, but also parameters such as the resonance frequency and, in the lossy case, the damping coefficient and the quality factor of the cavity can be obtained. This problem leads to an analytical eigenvalue equation, which can be transformed in an algebraic, complex, linear eigenvalue problem by the finite integration method.The consideration of energy losses in materials is straighforward in the analytical theory, using complex material quantities, but it is still a difficult subject area to solve a complex algebraic eigenvalue problem. Generally problems with very large, complex matrices (dimension 〉100,000) have to be solved, and no commonly applicable algorithm is known so far.This paper deals with a special variant of subspace iteration with polynomial acceleration, and some problems of the application of the complex Chebyshev polynomials are discussed. Two examples with weakly lossy cavities demonstrate the capability of the new algorithm, which is successfully applied to very large problems of up to 490, 000 real unknowns.
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 151-151 
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    Keywords: Engineering ; Electrical and Electronics Engineering
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    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8 (1995), S. 169-185 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
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    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: This paper describes the implementation of transmission-line matirix (TLM) method algorithms on a massively parallel computer (DECmpp 12000), the technique of distributed computing in the UNIX environment, and the combination of TLM analysis with Prony's method as well as with autoregressive moving average (ARMA) digital signal processing for electromagnetic field modelling. By combining these advanced computation techniques, typical electromagnetic field modelling of microwave structures by TLM analysis can be accelerated by a few orders of magnitude.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 109-115 
    ISSN: 1057-9257
    Keywords: fluoride ; preparation ; purification ; glass ; fibre ; crystal ; Chemistry ; Polymer and Materials Science
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    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The development of low-loss fluoride glass fibres for transoceanic telecommunications led to an increased demand for inorganic fluorides with ultrahigh purity in respect of transition metals, rare earths and oxygen. This review paper describes the Merck Ltd strategy for achieving a wide range of metallic fluorides using methods of preparation and purification selected for a combination of technical efficacy and economic practicability. General prepative methods involving aqueous and non-aqueous routes are described, togehther with purification methods such as ion exchange, zone refining and vacuum sublimation. The special role of ammonium fluoride complexes is discussed. The application of these general methods to the manufacture of fluoride glass components is described, with special reference to the ZBLAN formulation. Additional glass compositions and their individual requirements are also discussed. The parallel application of high-purity metal fluorides in the growth of optical crystals is emphasised, the history of fluoride ultrapurification having begun with the early demand for high-quality UV and IR crystals such as CaF2 and LiF.
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    Advanced Materials for Optics and Electronics 5 (1995) 
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    Keywords: Chemistry ; Polymer and Materials Science
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    Advanced Materials for Optics and Electronics 5 (1995), S. 191-198 
    ISSN: 1057-9257
    Keywords: TiN ; adhesion ; PVD ; electron shower ; arc ion plating ; sputtering ; wear ; surface ; morphology ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: It has been found that TiN films with high wear resistance and high adhesion can be prepared by electron shower deposition and arc ion plating on glass and austenitic stainless steel (SUS 316) substrates. The high wear resistance is principally explained by the grain size and surface morphology. Fine {100}-faceted crystals (10-150 nm) grew on the surface. The typical morphology of the crystals was triangular pyramidal. The crystallite size was changed by the bias voltage. Faceted crystals produced by arc ion plating were rounded and smoothed by a change in bias, but were unaltered in samples prepared by the electron shower process. The fine faceted surfaces had higher wear resistance than the granularly rounded ones. When TiO2 was formed at the interface of the glass substrate, the adhesion was lowered. The high-adhesion film prepared by electron shower deposition contained a small amount of TiO2 at the interface.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 215-221 
    ISSN: 1057-9257
    Keywords: Excitons ; ZnSe ; twins ; strain ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Splittings and shifts of excitonic states in ZnSe crystals under uniaxial stress along [100], [111] and [110] directions were studied by spatially resolved spectroscopy of both the reflectivity and the photoluminescence (PL) at 5 K. These methods enabled us to check the local strains in different surface microareas of deformed crystals and as a result to reveal the irregular free and bound exciton state shifts related to the influence of the strain nonuniformity and to the presence of structural imperfections (twins) in the crystals. It is shown that elastic deformation of twinned crystals along directions not exactly [111] gives rise to a doublet structure for all the bound exciton lines in the PL spectra. New values of deformation potentials for ZnSe crystals were deduced. The anisotropic influence of the uniaxial stress on the free and bound exciton state splittings was determined.
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    Advanced Materials for Optics and Electronics 5 (1995) 
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    Keywords: Chemistry ; Polymer and Materials Science
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    Advanced Materials for Optics and Electronics 5 (1995), S. 163-175 
    ISSN: 1057-9257
    Keywords: ULSI ; high dielectric constant ; metal oxides ; deposition ; annealing ; characterisation ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Flims of metal oxides, such as Ta2O5, Nb2O5, Al2O3, HfO2, ZrO2 and TiO2 have been fabricated by use of different precursor materials, deposition techniques and annealing techniques. Several analytical methods were applied to study the layers. New data of fundamental properties of these metal oxides are reported and related to practical features that are of importance in device design and manufacturing of advanced, highly integrated devices. This overview may facilitate the choice of an optimal combination of precursor material, deposition technique and corresponding annealing procedure for a specific application of these metal oxide films in microelectronics.
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    Advanced Materials for Optics and Electronics 5 (1995) 
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    Keywords: Chemistry ; Polymer and Materials Science
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    Advanced Materials for Optics and Electronics 5 (1995), S. 79-86 
    ISSN: 1057-9257
    Keywords: CMT ; composition ; AES ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The width of the band gap in the ternary system CdxHgI-xTe (CMT) is a function of the value of x and the assessment of device structures requires reliable techniques for the measurement of x both laterally and with depth. This work describes the development of an Auger electron spectrometry (AES) method for the measurement of CMT composition depth profiles, based on measurement of the Cd/Te ratio along shallow-angle bevelled sections through epitaxial layers. Results are accurate to within 3% relative and the depth resolution (Δz = 2σ) is about 0.04 μm even through layer structures with a total thickness of about 20 μm. Techniques for making the bevel sections are described together with the AES measurement and calibration techniques. A composition depth profile is given for a heterostructure grown by metal organic vapour phase epitaxy (MOVPE), showing the interface width (Δz = 2σ) at the composition change to be 0.3 μm. The CdTe/CMT interface widths in material grown by liquid phase epitaxy (LPE), MOVPE and molecular beam epitaxy (MBE) are shown to be highly dependent on growth temperature, with widths of 1.5, 0.2 and ≤ 0.04 μm respectively.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 135-135 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
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    Advanced Materials for Optics and Electronics 5 (1995), S. 265-268 
    ISSN: 1057-9257
    Keywords: fluorozirconate glass ; linear and non-linear properties ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The linear and non-linear optical properties of fluorozirconate glasses with and without nitrogen, namely ZrF4—BaF2—LaF3—AIF3 and ZrF4—BaF2—LaF3—AIF3—AIN, have been studied. The glass containing nitrogen exhibits a 5 nm shift of the transmittance edge in the UV region towards longer wavelength, whereas there is no change in the IR transmittance. Measurements show a small increase in the linear index of refraction in the visible region and a small decrease in the non-linear (intensity-dependent) refractive index coefficient n2. Longitudinal and transverse sound velocities estimated from Brillouin-scattering experiments for both glasses amount to 6311 and 4514 ms-1, respectively.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 289-298 
    ISSN: 1057-9257
    Keywords: natural enargite ; semiconductor material ; electrical and optical properties ; photoelectrochemistry ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The semiconducting properties of natural samples of enargite, a copper and arsenic suphide (Cu3AsS4), have been studied. They have been found to be p-type semiconductors with a resistivity of about 7 Ω cm, a doping level of about 1017 cm-3 and a mobility of 9 cm2V-1 s-1. The variation of the resistivity as a function of temperature allows to determine an activation energy of 0.11 eV. Two optical transitions have been determined, an indirect one at 1.19 eV and a direct one at 1.44 eV. The samples, mounted as working electrodes in a photoelectrochemical set-up, are photosensitive and behave as p-type photocathodes. The two transitions are found again from the analysis of photocurrent spectra. The direct band gap value is close to the ideal value required for photovoltaic applications. However the quantum efficiencies obtained here are still low.
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    Advanced Materials for Optics and Electronics 5 (1995) 
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    Keywords: Chemistry ; Polymer and Materials Science
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    Advanced Materials for Optics and Electronics 5 (1995), S. 31-35 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Quinizarin (1,4-DHAQ) and Ag/I,4-DHAQ thin films deposited under vacuum were investigated by I-V measurements at various temperatures. It is shown that when submitted to an electric field of 5 × 105 V cm-1 or less, the I-V characteristics of AI/DHAQ/AI sandwich structures are ohmic. The temperature dependence is I ∝ exp(-ΔE/kT). The measured activation energy is 0.3 eV in the case of pure DHAQ and 30meV in the case of Ag/DHAQ. Therefore we can imagine that in the former case the conductivity is controlled by thermally activated hopping above intermolecular barriers, while in the latter case the conductivity can be attributed to tunnelling between silver grains.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 53-70 
    ISSN: 1057-9257
    Keywords: AES ; XPS ; SIMS ; SNMS ; laser Raman microscopy ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: This review briefly describes some of the techniques available for analysing surfaces and illustrates their usefulness with a few examples. In particular, Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS), sputter neutral mass spectroscopy (SNMS) and laser Raman spectroscopy are all described. In analysing a surface, AES and XPS would normally be considered first, with AES being applied where high spatial resolution is required and XPS where chemical state information is needed. SIMS and SNMS can be performed together and can detect smaller surface concentrations. Laser Raman spectroscopy is useful for determining molecular bonding. Techniques which give topographic information, such as scanning tunnelling microscopy (STM) and atomic force microscopy (AFM), have not been considered.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 87-99 
    ISSN: 1057-9257
    Keywords: purity ; CdZnTe ; characterization ; IR ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Impurites were tracked from raw material purification through to CdZnTe processing in an effort to identify the sources of elements which impact on IR photodetector performance. Chemical analyses by GDMS and ZCGFAA effectively showed the levels of impurities introduced into CdZnTe substrate material from the manufacturing processes. A new purification process (ISDZR) for raw materials was developed, resulting in improved CdZnTe substrate purity. Substrate CU contamination was found to have detrimental effects on LPE layer and device electrical properties for lightly doped HgCdTe.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 199-213 
    ISSN: 1057-9257
    Keywords: encapsulation ; coupling agents ; self-assembly ; monolayers ; leakage currents ; corrosion ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Two polymeric coatings, a silicone gel (Dow Corning 6646) and an epoxy resin (Dexter FP 4402), were glob-top coated onto representative microelectronic circuits, AT&T Triple Track Testers (TTTs), and subjected to the Pressure Cooker Test (PCT). Coupling monolayers were self- assembled on the TTTs prior to encapsulation to improve the moisture protection capabilities of the coatings. Leakage current measurements were made to evaluate the effect of applied monolayers on the moisture protection capability. The moisture protection capability was assessed in short-term and long-term leakage current measurements. MHDA (16-mercaptohexadecanoic acid) and APS (gamma-aminopropyltriethoxysilane) monolayers, in combination with silicone gel and epoxy resin respectively, exhibited very good moisture protection performance.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 223-231 
    ISSN: 1057-9257
    Keywords: molecular computing ; molecular image-processing devices ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Operational features of excitable Belousov-Zhabotinsky-type light-sensitive media that can be used to implement image-processing operations are discussed. They embrace (i) the main primitive responses of such media to light excitation as a function of medium acidity, temperature and light exposure, (ii) the characteristics of temporal evolution of stored media and (iii) the resolution and information content inherent in images stored by excitable media. It is shown that controlling the acidity of the medium, its temperature and the duration of light exposure enables one to get reproducible results.
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  • 68
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    Advanced Materials for Optics and Electronics 5 (1995), S. 233-241 
    ISSN: 1057-9257
    Keywords: molecular computing ; molecular neurocomputer ; molecular image-processing devices ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Basic primitive image-processing operations performed by chemical dynamic media functioning in the oscillating mode are discussed. These operations have rather high computational complexity and can be considered as simulation of human vision capabilities.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 137-143 
    ISSN: 1057-9257
    Keywords: sensor ; Langmuir-Blodgett film ; chromoionophore ; crown ether ; complex formation ; stability constant ; absorbance ; water ; metal cation ; silver ; mercury ; lead ; barium ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Langmuir-Blodgett films built up from an amphiphilic derivative of benzothiazolium styryl dye containing a 1,10-dithia-18-crown-6 ether group have been found to complex with ‘soft’ polarisable ions such as Ag+ and Hg2+ in water. The films exhibited high sensitivity (stability constant of complex formation K ≈ 105 M-1) and high selectivity (e.g. K(Ag+)/K(Pb2+)〉 105) compared with aqueous solutions of similar ionophores. This was attributed to the predominant formation of complexes with ligand-cation stoichiometries of 2:1 in the films.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 186-190 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
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  • 71
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    Advanced Materials for Optics and Electronics 5 (1995), S. ii 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
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    Advanced Materials for Optics and Electronics 5 (1995), S. 243-244 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
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    Advanced Materials for Optics and Electronics 5 (1995), S. 305-320 
    ISSN: 1057-9257
    Keywords: rectification ; Langmuir-Blodgett films ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: In the field of molecular scale electronics the drive is towards the fabrication of self-assembled, organic, nanoscale architectures which will have an active role to play in novel electronic devices. As a formative step towards this goal the creation of an organic analogue to the p-n junction was proposed by Aviram and Ratner in the 1970s. In their proposal a monomolecular layer of a charge transfer species controls current flow between a pair of metal electrodes, allowing easy flow for only one polarity of the applied voltage. Such metal/molecular layer/metal structures have now been fabricated, utilising the self-ordering properties of Langmuir-Blodgett films to form the organic layer, with one dimension of the device being reduced to the molecular scale. The fabrication techniques involved in the generation of these M/LB/M junctions are now described along with the present understanding of conduction mechanisms through such nanoscale thickness junctions. These structures clearly show that the organic molecular layers can control current passage in electronic devices emulating some of the characteristics of an inorganic semiconducting p-n junction.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 37-43 
    ISSN: 1057-9257
    Keywords: Spiropyran ; J-aggregates ; H-aggregates ; LB film ; non-linear photochromism logic ‘AND’ function ; optical neural network system ; Hopfield model ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Spiropyran SP1822 J-aggregate LB films show a non-linear photochromic response with a threshold against the incident light intensity of a CW dye laser. Using two laser beams operating below the threshold level intensity, the logic ‘AND’ function was found to be optically stored as an overlapping region of two incident patterns. We proposed the adoption of an LB film of spiropyran J-aggregates to store the memory matrix Tijkl as an overlapping region of learning input pattern Vij and multi-image input pattern Vkl in order to construct an optical neural network system based on Hopfield model.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 71-78 
    ISSN: 1057-9257
    Keywords: analysis ; laser ; spectrometry ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: A laser scan mass spectrometry (LSMS) technique has been applied to the analysis of epitaxial layers and bulk CdxHg1-xTe (CMT) materials. The samples are raster scanned under a focused Q-switched Nd-YAG laser beam which ionises all elements with approximately unit sensitivity. The ions are extracted into a high-resolution mass spectrometer and interpretation of the mass spectra gives a complete impurity survey of the material with detection limits down to 1 part in 109 (3 × 1013 cm-1) in bulk materials and 5 parts in 109 in epitaxial layers. Surface impurities are effectively removed in the first scan and subsequent scans over the same area give a true measurement of the impurities present in the material. Successive erosion of the sample surface gives impurity depth profiles with the thickness of material eroded in each scan variable between 1 and 4 μm. Results are given for impurities found in bulk CMT grown by standard Bridgman and ACRT (accelerated crucible rotation technique) processes and in epitaxial CMT produced by liquid phase epitaxy (LPE), metal organic vapour phase epitaxy (MOVPE) and molecular beam epitaxy (MBE). Bulk material is shown to be purer in general than epitaxial material. Semiquentitative depth profiles of dopants in CMT, such as iodine, arsenic and phosphorus, can also be obtained and comparative LSMS and secondary ion mass spectrometry (SIMS) depth profiles showing good agreement are given for arsenic in an MOVPE layer.
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    Advanced Materials for Optics and Electronics 5 (1995) 
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    Keywords: Chemistry ; Polymer and Materials Science
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    Advanced Materials for Optics and Electronics 5 (1995), S. 157-161 
    ISSN: 1057-9257
    Keywords: CdTe ; iodine doping ; diffusion ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Studies on the diffusion of iodine into CdTe at a temperature of 20°C using four widely differing types of diffusion sources are compared and discussed. The concentration profiles were measured using either a radiotracer sectioning (RTS) technique or secondary ion mass spectrometry (SIMS).The profiles were composed of four parts to which a computer package consisting of the sum of four complementary error functions (erfc) gave accurate fits, providing four empirical values of the diffusivity. The diffusivities for the fastest component in all four cases were in agreement (∼2 × 10-14 cm2 s-1) and were consistent with previously published data. These results indicate that when iodine is diffused from the vapour it is not a suitable long-termstable dopant in devices where sharp junctions are required.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 145-155 
    ISSN: 1057-9257
    Keywords: excitable media ; information transmission ; cellular automata ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: In this paper we address the problem of how to implement directed dispatching of information in homogeneous excitable media. To do this, we surveyed cellular automaton models which reveal spatial oscillating patterns of excitation. Thus we discovered a medium where any element at rest was excited if just two of its nearest neighbours were excited. A medium of this kind, the 2+ medium, does not support the spreading of ordinary autowaves, but in its evolution one can find compact movable groups of excited states. Here we demonstrate that such solitary waves with particle-like behaviour will change their velocity vectors as a result of external singular stimulation. Thus they can be used as objects with controllable movement which transmit information in disordered surroundings. The results of this work can be utilised in the design of molecular computers.
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  • 79
    ISSN: 1057-9257
    Keywords: gallium ; selenide ; sulphide ; CVD precursor ; electron diffraction ; X-ray diffraction ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The gallium sulphide cubane compounds [(Me2EtC)GaS]4 and [(Et2MeC)GaS]4, have been synthesised, and their potential as MOCVD precursors for GaS is discussed. The molecular structure of [(Et2MeC)GaS]4 has been determined by X-ray diffraction. In addition, the vapour phase structure of the GaSe precursor, [(tBu)GaSe]4 has been determined by gas phase electron diffraction and is compared with that previously determined in the solid state by X-ray diffraction.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 45-51 
    ISSN: 1057-9257
    Keywords: fluoride ; preparation ; purification ; glass ; fibre ; crystal ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The development of low-loss fluoride glass fibres for transoceanic telecommunications led to an increased demand for inorganic fluorides with ultrahigh purity in respect of transition metals, rare earths and oxygen. This review paper describes the Merck Ltd strategy for achieving a wide range of metallic fluorides using methods of preparation and purification selected for a combination of technical efficacy and economic practicability. General preparative methods involving aqueous and non-aqueous routes are described, together with purification methods such as ion exchange, zone refining and vacuum sublimation. The special role of ammonium fluoride complexes is discussed. The application of these general methods to the manufacture of fluoride glass components is described, with special reference to the ZBLAN formulation. Additional glass compositions and their individual requirements are also discussed. The parallel application of high-purity metal fluorides in the growth of optical crystals is emphasised, the history of fluoride ultrapurification having begun with the early demand for high-quality UV and IR crystals such as CaF2 and LiF.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 101-108 
    ISSN: 1057-9257
    Keywords: CdZnTe ; Zn segregation ; Bridgman ; ACRT ; substrates ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: One of the remaining problems in the use of CdZnTe material as substrates in liquid phase epitaxy (LPE) of CdxHg1-xTe (CMT) layers is that of variation in lattice matching, i.e. Zn content, across substrates. This wil become increasingly important in the future as larger focal plane arrays of infrared detectors are required. The basic Bridgman growth process for CdTe/Cd0.96Zn0.04Te has been extended by applying the accelerated crucible rotation technique (ACRT). A marked reduction in axial Zn segregtion is seen in 50 mm diameter ACRT material, but this effect is smaller in the case of 75 mm diameter crystals. Radial variations in Zn content are small in both sizes of crystal, demonstrating the benefits obtained from ACRT stirring. Both macro- and microsegregation effects have been studied in these crystals in an attempt to understand the growth mechanism. Zinc distributions have been assessed by near-infrared transmission, X-ray lattice parameter measurements, atomic absorption spectrometry (AAS) and Auger electron spectrometry (AES). The last technique was used for the microsegregation studies, while AAS provides the absolute calibration for Zn content. Comparisons with segregation behaviour found in the literature will be given. It will be shown that the low temperature gradient and low growth rate lead to a degree of supercooling in the first-to-freeze region and this leads to significant Zn segregation in both radial and axial directions. As the crystals reach full diameter, the radial variation is decreased, presumably by the action of the ACRT, and axial segregation is also reduced.
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  • 82
    ISSN: 1057-9257
    Keywords: MOCVD ; precursors ; CdS ; ZnS ; GaAs ; InP ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The last 10 years have seen a number of chemists begin to take a serious interest in the deposition of materials such as compound semiconductors. Chemical deposition routes have a number of potential advantages, many of which arise from the fact that growth can take place well away from equilibrium. Chemists are particularly attracted by the idea that a volatile single molecule can deliver the elements of a compound semiconductor to the reaction site. In the present article recent advances in the deposition of compound semiconductors, principally II/VI (12/16) or III/V (13/15) materials, from single-molecule precursors will be reviewed. The chemistry of these precursors will be discussed in terms of both their synthesis and properties and the effect of the mechanism of their decomposition on the quality of deposited material.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 245-258 
    ISSN: 1057-9257
    Keywords: gallium ; indium ; metal organic chemical vapour deposition (MOCVD) ; precursors ; selenium ; sulphur ; tellurium ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: A review is presented of recent advances in the metal organic chemical vapour deposition (MOCVD) of thin films of group III chalcogenides, including their application for the passivation of GaAs surfaces. The majority of studies involve the deposition of thermodynamic phases of composition ME and M2E3 (M=Ga, In; E=S, Se, Te), however, MOCVD allows for the growth of either high-pressure (tetragonal InS) or non-thermodynamic phases (metastable cubic phases of GaS and InSe). Based on the results to date, a series of goals for molecular control over the structure of deposited films is discussed.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 269-275 
    ISSN: 1057-9257
    Keywords: ZnCdS ; CdS ; ZnS ; photodetector ; chemical doping ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: ZnCdS films were formed by in situ chemical doping of CdS with Zn in a chemical bath. The X-ray diffraction (XRD) patterns of CdS films after Zn doping showed a more disordered nature, consisting of reflections from Zn0.049Cd0.951S (JCPDS 40-834) as well as CdS greenockite (hexagonal, JCPDS 41-1049) and hawleyite (cubic, JCPDS 10-0454) phases. A comparison of the optical transmittance spectra for undoped and Zn-doped films showed that the cut-off wavelength was modified after Zn doping, indicating the presence of impurity states in the band gap. Zn-doped films showed an increase in dark conductivity after annealing at about 200°C. These films exhibit promising characteristics for application in solar cell and photodetector structures.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 287-288 
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    Keywords: Chemistry ; Polymer and Materials Science
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    Advanced Materials for Optics and Electronics 5 (1995) 
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    Keywords: Chemistry ; Polymer and Materials Science
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    Advanced Materials for Optics and Electronics 5 (1995), S. 259-263 
    ISSN: 1057-9257
    Keywords: scanning tunnelling microscopy ; Langmuir-Blodgett films ; substituted phthalocyanines ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The in-plane molecular structures of octa-alkyl substituted copper phthalocyanine LB films deposited on graphite have been resolved with a scanning tunnelling microscope (STM). The face-to-face stacking of Pc macrocycles has been observed in the topographies of R8PcCu monolayers. The stacking period was found to be 3.8-4 Å and the molecular rows were separated by 19 Å and 16 A for (C6H13)PcCu and (C5H11)PcCu respectively.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 283-283 
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    Keywords: Chemistry ; Polymer and Materials Science
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    Advanced Materials for Optics and Electronics 5 (1995), S. 285-285 
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    Keywords: Chemistry ; Polymer and Materials Science
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    Advanced Materials for Optics and Electronics 5 (1995), S. ii 
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    Keywords: Chemistry ; Polymer and Materials Science
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    Advanced Materials for Optics and Electronics 5 (1995), S. 299-303 
    ISSN: 1057-9257
    Keywords: PET ; Cu vapour laser ; electroless deposition ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Experimental results are presented on via-hole etching in a thick (100 μm) film of polyethylene terephthalate (PET) with the help of a copper vapour laser (wavelength γ=510 nm, pulse duration 10 ns, repetition rate 8 kHz). The rate of via-hole formation is as high as 100 μms-1. The effective coupling of the polymer film to the laser radiation is due to the formation of highly absorbing graphitised regions in the bulk of the film, which is initially transparent at the laser wavelength. The side walls of the hole can be metallised by simultaneous decomposition of a Pd(acac)2 spun-on layer as a precursor for subsequent electroless Ni deposition. The activation of the inner surface of the hole is achieved as a result of the precursor vapour entering the hole during laser etching. The metallised via-hole provides a good electrical interconnection of the two sides of the PET film.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 329-331 
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    Keywords: Chemistry ; Polymer and Materials Science
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    Advanced Materials for Optics and Electronics 5 (1995), S. iii 
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    Keywords: Chemistry ; Polymer and Materials Science
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    ISSN: 1057-9257
    Keywords: barium ; volatile ; β-diketone ; X-ray structure ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: At 150 K [Ba(TDFND)2, tetraglyme] crystallises in the P1/c space group with a = 17.15(2) Å b = 10.735(5) Å, c = 22.830(7) A, β = 97.56 (7)°, V = 4165 (5) Å3, Z=4. R1 = 0.0435, wR2 = 0.1079. The barium atom is nine-co-ordinate, with binding to all the O atoms. The two BaTDFND rings are planar but tilted by 26° from being co-planar. The five O atoms of the tetraglyme ligand are also essentially co-planar, but this plane subtends angles of 88.8(1)° and 67.4(1)° to the two BaTDFND planes. The Ba—O (TDFND) bond lengths are longer than for other related compounds, but the Ba—O (tetraglyme) bond lengths are similar to those in [Ba(HFA)2.tetraglyme] (HFA ≡ CF3C(O)CHC(O)CF3). The low melting point and the fact that [Ba(TDFND)2.tetraglyme], alone of barium complexes of this kind, can be evaporated without decomposition at 1 atm are attributed to lower intermolecular forces for this compound and to its greater thermal stability.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 11-17 
    ISSN: 1057-9257
    Keywords: CdS ; chemical deposition ; complexing agent ; sulfurising agent ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The growth modes of CdS thin films on glass in a chemical bath were analysed using scanning electron microscopy and optical microscopy. The results of these studies show that the film growth occurs by ion-by-ion condensation and by colloidal particles of CdS adhering to the substrate. Both mechanisms are operative from the initial stages of film growth. The predominance of one or other of these two growth modes depends on the abundance of Cd and S ions present in the solution, which is determined by the amount of complexing and sulphurising agents and ammonia used for the controlled release of Cd and S ions into the solution. The growth mode influences the optical properties of the films.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 284-284 
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    Keywords: Chemistry ; Polymer and Materials Science
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    Advanced Materials for Optics and Electronics 5 (1995), S. 277-282 
    ISSN: 1057-9257
    Keywords: polythiophene electrogeneration ; doping by ionic implantation ; Schottky and PN junctions ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Using polythiophene films (∼5 μm thick) electrogenerated by trapezoidal waves of potential, then partially reduced, we realised metal-polythiophene contacts on the one hand. The electrical characteristics of a steel/polythiophene/gold sandwich structure are presented. We consider that the rectifying contact takes place between steel and p-type polythiophene. On the other hand, we showed that p-type polythiophene could be compensated after an implantation of alkali ions (Cs+ or Na+) in order to lead to the realisation of PN junctions. We particularly prove that the use of Na+ ions results in junctions yielding currents which are higher than with Cs+ ions. Current-voltage and capacitance-voltage characteristics have been presented so as to show that the junction effect is due to the efficiency of the doping by ionic implantation. These electrical measurements seem to be stable after several weeks in air.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 286-286 
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    Keywords: Chemistry ; Polymer and Materials Science
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    Advanced Materials for Optics and Electronics 5 (1995), S. 333-334 
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    Keywords: Chemistry ; Polymer and Materials Science
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    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 5 (1995), S. 321-327 
    ISSN: 1057-9257
    Keywords: photoreflectance spectroscopy ; MOCVD ; GaAs ; GaAIAs ; heterostructures ; quantum wells ; surface ; interface ; Kramers-Kronig analysis ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Epitaxial undoped and doped (Si and Zn) GaAs and GaAIAs layers as well as heterostructures of GaAs/GaAIAs have been grown in an atmospheric pressure, vertical MOCVD system. Room temperature photoreflectance (PR) has been applied to characterise the layers and heterostructures as well as multiple quantum wells. The surface- and interface-related PR has been studied by application of Kramers-Kronig analysis. A decomposition of the PR spectrum into spectra connected with the surface region and with the interface has been proposed.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
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