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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Journal of superconductivity 8 (1995), S. 491-494 
    ISSN: 1572-9605
    Keywords: Superconductivity ; pairing symmetry ; YBCO ; SQUID
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract At present, the symmetry of the order parameter in the high temperature superconductor YBCO is quite controversial. Recent experiments using SQUIDs and Josephson junctions appear to support competing theories, with some experiments supporting a dx2−y2 pairing symmetry for the order parameter and others a s-wave pairing symmetry. We note that a number of factors such as trapped flux, magnetic field gradients and SQUID asymmetries could lead such measurements astray. We use a Scanning SQUID Microscope and a time-reversal invariance test to resolve these experimental problems. We find the order parameter in YBCO has a time-reversal invariant dx2−y2 symmetric component. We estimate the amplitude of anyimaginary s-wave symmetric component to be less than 4% and anyreal s-wave component to be less than 82%.
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  • 2
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    Journal of superconductivity 8 (1995), S. 619-620 
    ISSN: 1572-9605
    Keywords: Irreversibility ; critical ; field ; doped ; YBCO
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The electrical resistivity of (Y1−xPrx)Ba2Cu3O7−gd and YBa2(Cu1−xZnx)3O7−δ thin films and (Y1−x. Tbx)Ba2Cu3O7−δ thin films and single crystals has been measured as a function of 0≤x≤xcrit, 2K≤T≤300K and OTH≤20T. The samples were oriented withc-axis parallel to applied fields. Upper critical field Hc2 and irreversibility field Hirr values have been determined from these measurements. Increased Tb doping appears to shift Hirr to higher temperatures. This coupled with observed twin peaks in magnetization measurements reflects an enhancement of flux pinning. Unlike Tb which does not appear to alterT c , Pr and Zn doping of this system tends to depress bothT c and the slope of the mean field normal phase-mixed phase boundary line (dH c2/dT).
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  • 3
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    Journal of superconductivity 8 (1995), S. 667-668 
    ISSN: 1572-9605
    Keywords: Mechanical oscillator ; YBCO ; vortex pinning ; twin boundary
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract High-Q oscillators, vibrating with extremely small tilt angles, ∼10−7 radians, were used to study vortex behavior in single crystal YBa2Cu3O7−δ. Systematic changes in the dissipation and frequency of the oscillator were explored for various fields both parallel and perpendicular to twin boundaries. At the small tilt oscillation amplitudes employed here, a number of features were observed which are not evident at the more typically utilized large oscillation amplitudes.
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  • 4
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    Journal of superconductivity 8 (1995), S. 679-680 
    ISSN: 1572-9605
    Keywords: Pairing ; symmetry ; YBCO ; tricrystal ; junction
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract We have developed a new method of probing superconducting pairing state symmetry, by using tricrystal devices analogous tos-d corner junctions. Two central peaks are observed in the field-modulated critical currents of frustrated YBCO tricrystal junctions operating in the short junction limit, consistent with predominantly $$d_{x^2 - y^2 } $$ — wave pairing symmetry with little or no imaginarys-wave component. However, our results are consistent with a real combination of larged-wave and smalls-wave components. A single peak is also observed for frustrated tricrystal junctions operating in the long junction limit, and it is shown theoretically that the behaviors ofs- andd-wave superconductors are indistinguishable in this limit.
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  • 5
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    Journal of superconductivity 8 (1995), S. 753-757 
    ISSN: 1572-9605
    Keywords: YBCO ; surface resistance ; penetration depth
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract In the present work a cavity fully coated with an YBCO thick film was fabricated using an improved electrophoretic deposition technology with a special attempt to avoid the possible contamination of the superconducting powder during the milling process in the suspension preparation. A microwave experimental set-up was constructed to measure the rf behavior of the cavity in a wide temperature range. The loaded quality factorQ 1 and the shift of the resonant frequency vs. the temperature at various rf magnetic fields have been measured. Furthermore, the surface resistance and the penetration depth determined from the measurements were compared with the numerical calculation in the framework of BCS theory, showing good agreement with the theoretical predictions.
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  • 6
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    Journal of superconductivity 8 (1995), S. 647-648 
    ISSN: 1572-9605
    Keywords: Ultrasonic ; YBCO ; polaronic condensation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract We investigated elastic anomalies of sintered YBa2Cu3O7−x (x=0.35) superconductor around the critical temperature (Tc=60 K). We observed the non-symmetric and large attenuation peak (2 dB/cm at 9.7 MHz) at Tc, which was due to the lattice softening caused by the strong correlation between carriers and local lattice distortion. The rapid decrease of ultrasonic attenuation just below Tc suggested a condensation mechanism. These supported the polaronic condensation in high-Tc superconductivity.
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  • 7
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    Advanced Materials for Optics and Electronics 5 (1995), S. 109-115 
    ISSN: 1057-9257
    Keywords: fluoride ; preparation ; purification ; glass ; fibre ; crystal ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The development of low-loss fluoride glass fibres for transoceanic telecommunications led to an increased demand for inorganic fluorides with ultrahigh purity in respect of transition metals, rare earths and oxygen. This review paper describes the Merck Ltd strategy for achieving a wide range of metallic fluorides using methods of preparation and purification selected for a combination of technical efficacy and economic practicability. General prepative methods involving aqueous and non-aqueous routes are described, togehther with purification methods such as ion exchange, zone refining and vacuum sublimation. The special role of ammonium fluoride complexes is discussed. The application of these general methods to the manufacture of fluoride glass components is described, with special reference to the ZBLAN formulation. Additional glass compositions and their individual requirements are also discussed. The parallel application of high-purity metal fluorides in the growth of optical crystals is emphasised, the history of fluoride ultrapurification having begun with the early demand for high-quality UV and IR crystals such as CaF2 and LiF.
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  • 8
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    Advanced Materials for Optics and Electronics 5 (1995) 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
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  • 9
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    Advanced Materials for Optics and Electronics 5 (1995), S. 191-198 
    ISSN: 1057-9257
    Keywords: TiN ; adhesion ; PVD ; electron shower ; arc ion plating ; sputtering ; wear ; surface ; morphology ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: It has been found that TiN films with high wear resistance and high adhesion can be prepared by electron shower deposition and arc ion plating on glass and austenitic stainless steel (SUS 316) substrates. The high wear resistance is principally explained by the grain size and surface morphology. Fine {100}-faceted crystals (10-150 nm) grew on the surface. The typical morphology of the crystals was triangular pyramidal. The crystallite size was changed by the bias voltage. Faceted crystals produced by arc ion plating were rounded and smoothed by a change in bias, but were unaltered in samples prepared by the electron shower process. The fine faceted surfaces had higher wear resistance than the granularly rounded ones. When TiO2 was formed at the interface of the glass substrate, the adhesion was lowered. The high-adhesion film prepared by electron shower deposition contained a small amount of TiO2 at the interface.
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  • 10
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    Advanced Materials for Optics and Electronics 5 (1995), S. 215-221 
    ISSN: 1057-9257
    Keywords: Excitons ; ZnSe ; twins ; strain ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Splittings and shifts of excitonic states in ZnSe crystals under uniaxial stress along [100], [111] and [110] directions were studied by spatially resolved spectroscopy of both the reflectivity and the photoluminescence (PL) at 5 K. These methods enabled us to check the local strains in different surface microareas of deformed crystals and as a result to reveal the irregular free and bound exciton state shifts related to the influence of the strain nonuniformity and to the presence of structural imperfections (twins) in the crystals. It is shown that elastic deformation of twinned crystals along directions not exactly [111] gives rise to a doublet structure for all the bound exciton lines in the PL spectra. New values of deformation potentials for ZnSe crystals were deduced. The anisotropic influence of the uniaxial stress on the free and bound exciton state splittings was determined.
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  • 11
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    Advanced Materials for Optics and Electronics 5 (1995) 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
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  • 12
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    Advanced Materials for Optics and Electronics 5 (1995), S. 163-175 
    ISSN: 1057-9257
    Keywords: ULSI ; high dielectric constant ; metal oxides ; deposition ; annealing ; characterisation ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Flims of metal oxides, such as Ta2O5, Nb2O5, Al2O3, HfO2, ZrO2 and TiO2 have been fabricated by use of different precursor materials, deposition techniques and annealing techniques. Several analytical methods were applied to study the layers. New data of fundamental properties of these metal oxides are reported and related to practical features that are of importance in device design and manufacturing of advanced, highly integrated devices. This overview may facilitate the choice of an optimal combination of precursor material, deposition technique and corresponding annealing procedure for a specific application of these metal oxide films in microelectronics.
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  • 13
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    Advanced Materials for Optics and Electronics 5 (1995) 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
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  • 14
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    Advanced Materials for Optics and Electronics 5 (1995), S. 79-86 
    ISSN: 1057-9257
    Keywords: CMT ; composition ; AES ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The width of the band gap in the ternary system CdxHgI-xTe (CMT) is a function of the value of x and the assessment of device structures requires reliable techniques for the measurement of x both laterally and with depth. This work describes the development of an Auger electron spectrometry (AES) method for the measurement of CMT composition depth profiles, based on measurement of the Cd/Te ratio along shallow-angle bevelled sections through epitaxial layers. Results are accurate to within 3% relative and the depth resolution (Δz = 2σ) is about 0.04 μm even through layer structures with a total thickness of about 20 μm. Techniques for making the bevel sections are described together with the AES measurement and calibration techniques. A composition depth profile is given for a heterostructure grown by metal organic vapour phase epitaxy (MOVPE), showing the interface width (Δz = 2σ) at the composition change to be 0.3 μm. The CdTe/CMT interface widths in material grown by liquid phase epitaxy (LPE), MOVPE and molecular beam epitaxy (MBE) are shown to be highly dependent on growth temperature, with widths of 1.5, 0.2 and ≤ 0.04 μm respectively.
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  • 15
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    Advanced Materials for Optics and Electronics 5 (1995), S. 135-135 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
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  • 16
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    Advanced Materials for Optics and Electronics 5 (1995), S. 265-268 
    ISSN: 1057-9257
    Keywords: fluorozirconate glass ; linear and non-linear properties ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The linear and non-linear optical properties of fluorozirconate glasses with and without nitrogen, namely ZrF4—BaF2—LaF3—AIF3 and ZrF4—BaF2—LaF3—AIF3—AIN, have been studied. The glass containing nitrogen exhibits a 5 nm shift of the transmittance edge in the UV region towards longer wavelength, whereas there is no change in the IR transmittance. Measurements show a small increase in the linear index of refraction in the visible region and a small decrease in the non-linear (intensity-dependent) refractive index coefficient n2. Longitudinal and transverse sound velocities estimated from Brillouin-scattering experiments for both glasses amount to 6311 and 4514 ms-1, respectively.
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  • 17
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    Advanced Materials for Optics and Electronics 5 (1995), S. 289-298 
    ISSN: 1057-9257
    Keywords: natural enargite ; semiconductor material ; electrical and optical properties ; photoelectrochemistry ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The semiconducting properties of natural samples of enargite, a copper and arsenic suphide (Cu3AsS4), have been studied. They have been found to be p-type semiconductors with a resistivity of about 7 Ω cm, a doping level of about 1017 cm-3 and a mobility of 9 cm2V-1 s-1. The variation of the resistivity as a function of temperature allows to determine an activation energy of 0.11 eV. Two optical transitions have been determined, an indirect one at 1.19 eV and a direct one at 1.44 eV. The samples, mounted as working electrodes in a photoelectrochemical set-up, are photosensitive and behave as p-type photocathodes. The two transitions are found again from the analysis of photocurrent spectra. The direct band gap value is close to the ideal value required for photovoltaic applications. However the quantum efficiencies obtained here are still low.
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  • 18
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    Advanced Materials for Optics and Electronics 5 (1995) 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
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  • 19
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    Advanced Materials for Optics and Electronics 5 (1995), S. 31-35 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Quinizarin (1,4-DHAQ) and Ag/I,4-DHAQ thin films deposited under vacuum were investigated by I-V measurements at various temperatures. It is shown that when submitted to an electric field of 5 × 105 V cm-1 or less, the I-V characteristics of AI/DHAQ/AI sandwich structures are ohmic. The temperature dependence is I ∝ exp(-ΔE/kT). The measured activation energy is 0.3 eV in the case of pure DHAQ and 30meV in the case of Ag/DHAQ. Therefore we can imagine that in the former case the conductivity is controlled by thermally activated hopping above intermolecular barriers, while in the latter case the conductivity can be attributed to tunnelling between silver grains.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 53-70 
    ISSN: 1057-9257
    Keywords: AES ; XPS ; SIMS ; SNMS ; laser Raman microscopy ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: This review briefly describes some of the techniques available for analysing surfaces and illustrates their usefulness with a few examples. In particular, Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS), sputter neutral mass spectroscopy (SNMS) and laser Raman spectroscopy are all described. In analysing a surface, AES and XPS would normally be considered first, with AES being applied where high spatial resolution is required and XPS where chemical state information is needed. SIMS and SNMS can be performed together and can detect smaller surface concentrations. Laser Raman spectroscopy is useful for determining molecular bonding. Techniques which give topographic information, such as scanning tunnelling microscopy (STM) and atomic force microscopy (AFM), have not been considered.
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  • 21
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    Advanced Materials for Optics and Electronics 5 (1995), S. 87-99 
    ISSN: 1057-9257
    Keywords: purity ; CdZnTe ; characterization ; IR ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Impurites were tracked from raw material purification through to CdZnTe processing in an effort to identify the sources of elements which impact on IR photodetector performance. Chemical analyses by GDMS and ZCGFAA effectively showed the levels of impurities introduced into CdZnTe substrate material from the manufacturing processes. A new purification process (ISDZR) for raw materials was developed, resulting in improved CdZnTe substrate purity. Substrate CU contamination was found to have detrimental effects on LPE layer and device electrical properties for lightly doped HgCdTe.
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  • 22
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    Advanced Materials for Optics and Electronics 5 (1995), S. 199-213 
    ISSN: 1057-9257
    Keywords: encapsulation ; coupling agents ; self-assembly ; monolayers ; leakage currents ; corrosion ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Two polymeric coatings, a silicone gel (Dow Corning 6646) and an epoxy resin (Dexter FP 4402), were glob-top coated onto representative microelectronic circuits, AT&T Triple Track Testers (TTTs), and subjected to the Pressure Cooker Test (PCT). Coupling monolayers were self- assembled on the TTTs prior to encapsulation to improve the moisture protection capabilities of the coatings. Leakage current measurements were made to evaluate the effect of applied monolayers on the moisture protection capability. The moisture protection capability was assessed in short-term and long-term leakage current measurements. MHDA (16-mercaptohexadecanoic acid) and APS (gamma-aminopropyltriethoxysilane) monolayers, in combination with silicone gel and epoxy resin respectively, exhibited very good moisture protection performance.
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  • 23
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    Advanced Materials for Optics and Electronics 5 (1995), S. 223-231 
    ISSN: 1057-9257
    Keywords: molecular computing ; molecular image-processing devices ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Operational features of excitable Belousov-Zhabotinsky-type light-sensitive media that can be used to implement image-processing operations are discussed. They embrace (i) the main primitive responses of such media to light excitation as a function of medium acidity, temperature and light exposure, (ii) the characteristics of temporal evolution of stored media and (iii) the resolution and information content inherent in images stored by excitable media. It is shown that controlling the acidity of the medium, its temperature and the duration of light exposure enables one to get reproducible results.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 233-241 
    ISSN: 1057-9257
    Keywords: molecular computing ; molecular neurocomputer ; molecular image-processing devices ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Basic primitive image-processing operations performed by chemical dynamic media functioning in the oscillating mode are discussed. These operations have rather high computational complexity and can be considered as simulation of human vision capabilities.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 137-143 
    ISSN: 1057-9257
    Keywords: sensor ; Langmuir-Blodgett film ; chromoionophore ; crown ether ; complex formation ; stability constant ; absorbance ; water ; metal cation ; silver ; mercury ; lead ; barium ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Langmuir-Blodgett films built up from an amphiphilic derivative of benzothiazolium styryl dye containing a 1,10-dithia-18-crown-6 ether group have been found to complex with ‘soft’ polarisable ions such as Ag+ and Hg2+ in water. The films exhibited high sensitivity (stability constant of complex formation K ≈ 105 M-1) and high selectivity (e.g. K(Ag+)/K(Pb2+)〉 105) compared with aqueous solutions of similar ionophores. This was attributed to the predominant formation of complexes with ligand-cation stoichiometries of 2:1 in the films.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 186-190 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
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    Advanced Materials for Optics and Electronics 5 (1995), S. ii 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
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    Advanced Materials for Optics and Electronics 5 (1995), S. 243-244 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
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    Advanced Materials for Optics and Electronics 5 (1995), S. 305-320 
    ISSN: 1057-9257
    Keywords: rectification ; Langmuir-Blodgett films ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: In the field of molecular scale electronics the drive is towards the fabrication of self-assembled, organic, nanoscale architectures which will have an active role to play in novel electronic devices. As a formative step towards this goal the creation of an organic analogue to the p-n junction was proposed by Aviram and Ratner in the 1970s. In their proposal a monomolecular layer of a charge transfer species controls current flow between a pair of metal electrodes, allowing easy flow for only one polarity of the applied voltage. Such metal/molecular layer/metal structures have now been fabricated, utilising the self-ordering properties of Langmuir-Blodgett films to form the organic layer, with one dimension of the device being reduced to the molecular scale. The fabrication techniques involved in the generation of these M/LB/M junctions are now described along with the present understanding of conduction mechanisms through such nanoscale thickness junctions. These structures clearly show that the organic molecular layers can control current passage in electronic devices emulating some of the characteristics of an inorganic semiconducting p-n junction.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 37-43 
    ISSN: 1057-9257
    Keywords: Spiropyran ; J-aggregates ; H-aggregates ; LB film ; non-linear photochromism logic ‘AND’ function ; optical neural network system ; Hopfield model ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Spiropyran SP1822 J-aggregate LB films show a non-linear photochromic response with a threshold against the incident light intensity of a CW dye laser. Using two laser beams operating below the threshold level intensity, the logic ‘AND’ function was found to be optically stored as an overlapping region of two incident patterns. We proposed the adoption of an LB film of spiropyran J-aggregates to store the memory matrix Tijkl as an overlapping region of learning input pattern Vij and multi-image input pattern Vkl in order to construct an optical neural network system based on Hopfield model.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 71-78 
    ISSN: 1057-9257
    Keywords: analysis ; laser ; spectrometry ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: A laser scan mass spectrometry (LSMS) technique has been applied to the analysis of epitaxial layers and bulk CdxHg1-xTe (CMT) materials. The samples are raster scanned under a focused Q-switched Nd-YAG laser beam which ionises all elements with approximately unit sensitivity. The ions are extracted into a high-resolution mass spectrometer and interpretation of the mass spectra gives a complete impurity survey of the material with detection limits down to 1 part in 109 (3 × 1013 cm-1) in bulk materials and 5 parts in 109 in epitaxial layers. Surface impurities are effectively removed in the first scan and subsequent scans over the same area give a true measurement of the impurities present in the material. Successive erosion of the sample surface gives impurity depth profiles with the thickness of material eroded in each scan variable between 1 and 4 μm. Results are given for impurities found in bulk CMT grown by standard Bridgman and ACRT (accelerated crucible rotation technique) processes and in epitaxial CMT produced by liquid phase epitaxy (LPE), metal organic vapour phase epitaxy (MOVPE) and molecular beam epitaxy (MBE). Bulk material is shown to be purer in general than epitaxial material. Semiquentitative depth profiles of dopants in CMT, such as iodine, arsenic and phosphorus, can also be obtained and comparative LSMS and secondary ion mass spectrometry (SIMS) depth profiles showing good agreement are given for arsenic in an MOVPE layer.
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    Advanced Materials for Optics and Electronics 5 (1995) 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
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  • 33
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    Advanced Materials for Optics and Electronics 5 (1995), S. 157-161 
    ISSN: 1057-9257
    Keywords: CdTe ; iodine doping ; diffusion ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Studies on the diffusion of iodine into CdTe at a temperature of 20°C using four widely differing types of diffusion sources are compared and discussed. The concentration profiles were measured using either a radiotracer sectioning (RTS) technique or secondary ion mass spectrometry (SIMS).The profiles were composed of four parts to which a computer package consisting of the sum of four complementary error functions (erfc) gave accurate fits, providing four empirical values of the diffusivity. The diffusivities for the fastest component in all four cases were in agreement (∼2 × 10-14 cm2 s-1) and were consistent with previously published data. These results indicate that when iodine is diffused from the vapour it is not a suitable long-termstable dopant in devices where sharp junctions are required.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 145-155 
    ISSN: 1057-9257
    Keywords: excitable media ; information transmission ; cellular automata ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: In this paper we address the problem of how to implement directed dispatching of information in homogeneous excitable media. To do this, we surveyed cellular automaton models which reveal spatial oscillating patterns of excitation. Thus we discovered a medium where any element at rest was excited if just two of its nearest neighbours were excited. A medium of this kind, the 2+ medium, does not support the spreading of ordinary autowaves, but in its evolution one can find compact movable groups of excited states. Here we demonstrate that such solitary waves with particle-like behaviour will change their velocity vectors as a result of external singular stimulation. Thus they can be used as objects with controllable movement which transmit information in disordered surroundings. The results of this work can be utilised in the design of molecular computers.
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    ISSN: 1057-9257
    Keywords: gallium ; selenide ; sulphide ; CVD precursor ; electron diffraction ; X-ray diffraction ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The gallium sulphide cubane compounds [(Me2EtC)GaS]4 and [(Et2MeC)GaS]4, have been synthesised, and their potential as MOCVD precursors for GaS is discussed. The molecular structure of [(Et2MeC)GaS]4 has been determined by X-ray diffraction. In addition, the vapour phase structure of the GaSe precursor, [(tBu)GaSe]4 has been determined by gas phase electron diffraction and is compared with that previously determined in the solid state by X-ray diffraction.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 45-51 
    ISSN: 1057-9257
    Keywords: fluoride ; preparation ; purification ; glass ; fibre ; crystal ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The development of low-loss fluoride glass fibres for transoceanic telecommunications led to an increased demand for inorganic fluorides with ultrahigh purity in respect of transition metals, rare earths and oxygen. This review paper describes the Merck Ltd strategy for achieving a wide range of metallic fluorides using methods of preparation and purification selected for a combination of technical efficacy and economic practicability. General preparative methods involving aqueous and non-aqueous routes are described, together with purification methods such as ion exchange, zone refining and vacuum sublimation. The special role of ammonium fluoride complexes is discussed. The application of these general methods to the manufacture of fluoride glass components is described, with special reference to the ZBLAN formulation. Additional glass compositions and their individual requirements are also discussed. The parallel application of high-purity metal fluorides in the growth of optical crystals is emphasised, the history of fluoride ultrapurification having begun with the early demand for high-quality UV and IR crystals such as CaF2 and LiF.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 101-108 
    ISSN: 1057-9257
    Keywords: CdZnTe ; Zn segregation ; Bridgman ; ACRT ; substrates ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: One of the remaining problems in the use of CdZnTe material as substrates in liquid phase epitaxy (LPE) of CdxHg1-xTe (CMT) layers is that of variation in lattice matching, i.e. Zn content, across substrates. This wil become increasingly important in the future as larger focal plane arrays of infrared detectors are required. The basic Bridgman growth process for CdTe/Cd0.96Zn0.04Te has been extended by applying the accelerated crucible rotation technique (ACRT). A marked reduction in axial Zn segregtion is seen in 50 mm diameter ACRT material, but this effect is smaller in the case of 75 mm diameter crystals. Radial variations in Zn content are small in both sizes of crystal, demonstrating the benefits obtained from ACRT stirring. Both macro- and microsegregation effects have been studied in these crystals in an attempt to understand the growth mechanism. Zinc distributions have been assessed by near-infrared transmission, X-ray lattice parameter measurements, atomic absorption spectrometry (AAS) and Auger electron spectrometry (AES). The last technique was used for the microsegregation studies, while AAS provides the absolute calibration for Zn content. Comparisons with segregation behaviour found in the literature will be given. It will be shown that the low temperature gradient and low growth rate lead to a degree of supercooling in the first-to-freeze region and this leads to significant Zn segregation in both radial and axial directions. As the crystals reach full diameter, the radial variation is decreased, presumably by the action of the ACRT, and axial segregation is also reduced.
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  • 38
    ISSN: 1057-9257
    Keywords: MOCVD ; precursors ; CdS ; ZnS ; GaAs ; InP ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The last 10 years have seen a number of chemists begin to take a serious interest in the deposition of materials such as compound semiconductors. Chemical deposition routes have a number of potential advantages, many of which arise from the fact that growth can take place well away from equilibrium. Chemists are particularly attracted by the idea that a volatile single molecule can deliver the elements of a compound semiconductor to the reaction site. In the present article recent advances in the deposition of compound semiconductors, principally II/VI (12/16) or III/V (13/15) materials, from single-molecule precursors will be reviewed. The chemistry of these precursors will be discussed in terms of both their synthesis and properties and the effect of the mechanism of their decomposition on the quality of deposited material.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 245-258 
    ISSN: 1057-9257
    Keywords: gallium ; indium ; metal organic chemical vapour deposition (MOCVD) ; precursors ; selenium ; sulphur ; tellurium ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: A review is presented of recent advances in the metal organic chemical vapour deposition (MOCVD) of thin films of group III chalcogenides, including their application for the passivation of GaAs surfaces. The majority of studies involve the deposition of thermodynamic phases of composition ME and M2E3 (M=Ga, In; E=S, Se, Te), however, MOCVD allows for the growth of either high-pressure (tetragonal InS) or non-thermodynamic phases (metastable cubic phases of GaS and InSe). Based on the results to date, a series of goals for molecular control over the structure of deposited films is discussed.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 269-275 
    ISSN: 1057-9257
    Keywords: ZnCdS ; CdS ; ZnS ; photodetector ; chemical doping ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: ZnCdS films were formed by in situ chemical doping of CdS with Zn in a chemical bath. The X-ray diffraction (XRD) patterns of CdS films after Zn doping showed a more disordered nature, consisting of reflections from Zn0.049Cd0.951S (JCPDS 40-834) as well as CdS greenockite (hexagonal, JCPDS 41-1049) and hawleyite (cubic, JCPDS 10-0454) phases. A comparison of the optical transmittance spectra for undoped and Zn-doped films showed that the cut-off wavelength was modified after Zn doping, indicating the presence of impurity states in the band gap. Zn-doped films showed an increase in dark conductivity after annealing at about 200°C. These films exhibit promising characteristics for application in solar cell and photodetector structures.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 287-288 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
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    Keywords: Chemistry ; Polymer and Materials Science
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    Advanced Materials for Optics and Electronics 5 (1995), S. 259-263 
    ISSN: 1057-9257
    Keywords: scanning tunnelling microscopy ; Langmuir-Blodgett films ; substituted phthalocyanines ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The in-plane molecular structures of octa-alkyl substituted copper phthalocyanine LB films deposited on graphite have been resolved with a scanning tunnelling microscope (STM). The face-to-face stacking of Pc macrocycles has been observed in the topographies of R8PcCu monolayers. The stacking period was found to be 3.8-4 Å and the molecular rows were separated by 19 Å and 16 A for (C6H13)PcCu and (C5H11)PcCu respectively.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 283-283 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
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    Advanced Materials for Optics and Electronics 5 (1995), S. 285-285 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
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    Advanced Materials for Optics and Electronics 5 (1995), S. ii 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
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    Advanced Materials for Optics and Electronics 5 (1995), S. 299-303 
    ISSN: 1057-9257
    Keywords: PET ; Cu vapour laser ; electroless deposition ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Experimental results are presented on via-hole etching in a thick (100 μm) film of polyethylene terephthalate (PET) with the help of a copper vapour laser (wavelength γ=510 nm, pulse duration 10 ns, repetition rate 8 kHz). The rate of via-hole formation is as high as 100 μms-1. The effective coupling of the polymer film to the laser radiation is due to the formation of highly absorbing graphitised regions in the bulk of the film, which is initially transparent at the laser wavelength. The side walls of the hole can be metallised by simultaneous decomposition of a Pd(acac)2 spun-on layer as a precursor for subsequent electroless Ni deposition. The activation of the inner surface of the hole is achieved as a result of the precursor vapour entering the hole during laser etching. The metallised via-hole provides a good electrical interconnection of the two sides of the PET film.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 329-331 
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    Keywords: Chemistry ; Polymer and Materials Science
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    Advanced Materials for Optics and Electronics 5 (1995), S. iii 
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    Keywords: Chemistry ; Polymer and Materials Science
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    ISSN: 1057-9257
    Keywords: barium ; volatile ; β-diketone ; X-ray structure ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: At 150 K [Ba(TDFND)2, tetraglyme] crystallises in the P1/c space group with a = 17.15(2) Å b = 10.735(5) Å, c = 22.830(7) A, β = 97.56 (7)°, V = 4165 (5) Å3, Z=4. R1 = 0.0435, wR2 = 0.1079. The barium atom is nine-co-ordinate, with binding to all the O atoms. The two BaTDFND rings are planar but tilted by 26° from being co-planar. The five O atoms of the tetraglyme ligand are also essentially co-planar, but this plane subtends angles of 88.8(1)° and 67.4(1)° to the two BaTDFND planes. The Ba—O (TDFND) bond lengths are longer than for other related compounds, but the Ba—O (tetraglyme) bond lengths are similar to those in [Ba(HFA)2.tetraglyme] (HFA ≡ CF3C(O)CHC(O)CF3). The low melting point and the fact that [Ba(TDFND)2.tetraglyme], alone of barium complexes of this kind, can be evaporated without decomposition at 1 atm are attributed to lower intermolecular forces for this compound and to its greater thermal stability.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 11-17 
    ISSN: 1057-9257
    Keywords: CdS ; chemical deposition ; complexing agent ; sulfurising agent ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The growth modes of CdS thin films on glass in a chemical bath were analysed using scanning electron microscopy and optical microscopy. The results of these studies show that the film growth occurs by ion-by-ion condensation and by colloidal particles of CdS adhering to the substrate. Both mechanisms are operative from the initial stages of film growth. The predominance of one or other of these two growth modes depends on the abundance of Cd and S ions present in the solution, which is determined by the amount of complexing and sulphurising agents and ammonia used for the controlled release of Cd and S ions into the solution. The growth mode influences the optical properties of the films.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 284-284 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
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    Advanced Materials for Optics and Electronics 5 (1995), S. 277-282 
    ISSN: 1057-9257
    Keywords: polythiophene electrogeneration ; doping by ionic implantation ; Schottky and PN junctions ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Using polythiophene films (∼5 μm thick) electrogenerated by trapezoidal waves of potential, then partially reduced, we realised metal-polythiophene contacts on the one hand. The electrical characteristics of a steel/polythiophene/gold sandwich structure are presented. We consider that the rectifying contact takes place between steel and p-type polythiophene. On the other hand, we showed that p-type polythiophene could be compensated after an implantation of alkali ions (Cs+ or Na+) in order to lead to the realisation of PN junctions. We particularly prove that the use of Na+ ions results in junctions yielding currents which are higher than with Cs+ ions. Current-voltage and capacitance-voltage characteristics have been presented so as to show that the junction effect is due to the efficiency of the doping by ionic implantation. These electrical measurements seem to be stable after several weeks in air.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 286-286 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
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    Advanced Materials for Optics and Electronics 5 (1995), S. 333-334 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
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    Advanced Materials for Optics and Electronics 5 (1995), S. 321-327 
    ISSN: 1057-9257
    Keywords: photoreflectance spectroscopy ; MOCVD ; GaAs ; GaAIAs ; heterostructures ; quantum wells ; surface ; interface ; Kramers-Kronig analysis ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Epitaxial undoped and doped (Si and Zn) GaAs and GaAIAs layers as well as heterostructures of GaAs/GaAIAs have been grown in an atmospheric pressure, vertical MOCVD system. Room temperature photoreflectance (PR) has been applied to characterise the layers and heterostructures as well as multiple quantum wells. The surface- and interface-related PR has been studied by application of Kramers-Kronig analysis. A decomposition of the PR spectrum into spectra connected with the surface region and with the interface has been proposed.
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    Advanced Materials for Optics and Electronics 5 (1995), S. 19-30 
    ISSN: 1057-9257
    Keywords: laser photochemistry ; LCVD ; laser photolysis ; laser pyrolysis ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Laser-induced TiCl4 decomposition at vapour pressure was performed and comparative study of the composition and structure of thermally (at 10.6 μm) and photolytically (at 248 nm) deposited Ti-based films is presented. Emphasis was given to the less explored titanium deposition process by CO2 laser pyrolysis of TiCl4. The detailed structure of films deposited on quartz substrates was examined by scanning electron microscopy and X-ray photoelectron spectroscopy. The influence of the incident laser energy on the chemical content of the films as well as on the film growth rate was demonstrated. The results indicate that in the thermal IR decomposition of TiCl4 a multilayer structure is formed with unsaturated TiSix at the interface and oxidized phases at the surface. The photolytic process leads to films with increased purity and a specific growth morphology.
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