Publication Date:
2011-06-15
Description:
Author(s): M. Kopecký, J. Kub, F. Máca, J. Mašek, O. Pacherová, A. W. Rushforth, B. L. Gallagher, R. P. Campion, V. Novák, and T. Jungwirth We report on high-resolution x-ray diffraction measurements of (Ga,Mn)As and (Ga,Mn)(As,P) epilayers. We observe a structural anisotropy in the form of stacking faults that are present in the (111) and (11 1̅ ) planes and absent in the ( 1̅ 11) and (1 1̅ 1) planes. They occupy 10 -2 ... [Phys. Rev. B 83, 235324] Published Tue Jun 14, 2011
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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