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  • Articles  (14)
  • 82.65  (8)
  • 61.70
  • 2015-2019
  • 1990-1994  (14)
  • 1915-1919
  • 1993  (14)
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (14)
  • Philosophy
Collection
  • Articles  (14)
Source
Keywords
Publisher
Years
  • 2015-2019
  • 1990-1994  (14)
  • 1915-1919
Year
Topic
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (14)
  • Philosophy
  • Physics  (15)
  • 1
    Electronic Resource
    Electronic Resource
    Entropy-controlled site occupation of CO adsorbed on Ni(100) (1993)
    Springer
    Applied physics 57 (1993), S. 499-505 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The adsorption of CO on a Ni(100) surface has been studied by FT-IRAS in the temperature range from 85 K to 300 K. At 300 K and for Θ=0.5, the CO molecules are predominantly adsorbed in on-top sites with only a minor fraction located at two-fold bridge sites. Measurements on a Ni(100) surface pre-covered with sulphur, oxygen and carbon indicate that the occupation of bridge sites may be caused by small amounts of surface impurities. The relative broadness of the infrared bands is explained by CO molecules occupying intermediate positions at domain walls. Upon lowering the temperature, the bridge sites are increasingly occupied at the expense of terminal sites. This process is completely reversible and is explained by a contribution of the hindered translations of the adsorbed CO molecules to the entropy. At 85 K and for low initial coverages, we observe an unusual high CO stretching frequency at 2205 cm−1 which cannot be explained at present.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331748
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  • 2
    Electronic Resource
    Electronic Resource
    Dark build-up of holograms in BaTiO3 after recording (1993)
    Springer
    Applied physics 57 (1993), S. 437-440 
    Details
    ISSN: 1432-0630
    Keywords: 78.20 ; 61.70 ; 72.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Holograms recorded under suitable conditions in photorefractive BaTiO3 exhibit an unusual dark build-up. The diffraction efficiency increases by some orders of magnitude after the recording beams are switched off, and then steadily decreases afterwards. An interpretation of this effect in terms of a two-center charge transport model is given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331783
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  • 3
    Electronic Resource
    Electronic Resource
    Heat “superemission” and nucleation-front propagation under laser-induced crystallization of thin amorphous films (1993)
    Springer
    Applied physics 57 (1993), S. 561-566 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 68.35 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The laser-induced solid-state explosive nucleation in amorphous media is studied analytically. The shapes of the temperature switching wave and that of the nucleation front as well as the formula for the front velocity are derived considering also self-consistent medium deformation. Two conditions of explosive nucleation reflecting the roles of latent heat emission and of deformation are formulated. It is shown that, in explosive nucleation, the rate of internal heat emission is proportional to the square of the latent crystallization heat (“superemission”) in analogy to photon superradiance in initially inverted two-level atomic systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331759
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  • 4
    Electronic Resource
    Electronic Resource
    The role of excited species in UV-laser materials ablation (1993)
    Springer
    Applied physics 57 (1993), S. 367-374 
    Details
    ISSN: 1432-0630
    Keywords: 82.65 ; 82.50 ; 42.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract UV-laser ablation is described in terms of a two-level system in which the excitation energy is dissipated via stimulated emission, thermal relaxation, and activated desorption of excited species. For thermal relaxation times t T〉10−9 s and ΔE* ≪ ΔE (activation energies for excited-state and ground-state species) the model predicts high ablation rates at moderate surface temperatures, typically below 2000° C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00332291
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  • 5
    Electronic Resource
    Electronic Resource
    High-resolution electron microscopy of heterostructures and interfaces (1993)
    Springer
    Applied physics 57 (1993), S. 377-383 
    Details
    ISSN: 1432-0630
    Keywords: 07.80 ; 61.70 ; 81.10 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract High-resolution transmission electron microscopy (HREM) allows to study a wide range of device-relevant topics in heteroepitaxial layer structures. Quantitative HREM may be used to obtain chemical information on a near-atomic scale from interfacial transition zones. The physical background is described and demonstrated on several examples in the Al x Gal1−x As/GaAs system. The HREM contrast of antiphase boundaries in InP grown on Si was studied by image simulations and has been compared to experimental images. Silicon carbide precipitates were identified by HREM at the homoepitaxial Si/Si interface. They stem from carbon contamination prior to Si layer growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331775
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  • 6
    Electronic Resource
    Electronic Resource
    Characterization of MOVPE-grown GaAs layers by C-V analysis (1993)
    Springer
    Applied physics 56 (1993), S. 69-72 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 73.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A computer simulation study of the capacitance of a surface space charge layer in undoped n-GaAs grown by metalorganic vapour phase epitaxy is presented. The effect of the deep donor level EL2 on the surface capacitance of epilayers with an ideal free surface is estimated. In order to approach the as-grown layer surface the model used is extended considering MIS and Schottky-barrier structures and their voltage-capacitance curves are analysed. The theoretical C-V dependences are compared with experimental C-V curves of a real structure including N+-GaAs substrate, undoped n-GaAs epitaxial layer containing EL2 levels and thin native oxide. Conditions are determined at which the EL2 levels as well as the native oxide film may influence the capacitance characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00351905
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  • 7
    Electronic Resource
    Electronic Resource
    The influence of surface reconstruction on the kinetics of adsorption-desorption processes: A Monte Carlo study of a simple model (1993)
    Springer
    Applied physics 56 (1993), S. 73-80 
    Details
    ISSN: 1432-0630
    Keywords: 68.35 ; 82.20 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The influence of surface reconstruction on the kinetics of adsorption-desorption processes is studied through a simple two-position model by means of Monte Carlo simulation. Effects due to constraints on the translational motion of activated complexes and to heterogeneity are particularly investigated. Heterogeneity emerges as the most important factor to explain the huge variation of the preexponential Arrhenius parameter with coverage observed in the H/W(001) system. In the present model it is conjectured that heterogeneity originates from additional interactions of H with surface or sub-surface W atoms when hydrogen is adsorbed on sites where surface W atoms are farther apart due to reconstruction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00351906
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  • 8
    Electronic Resource
    Electronic Resource
    The role of excited species in UV-laser materials ablation (1993)
    Springer
    Applied physics 57 (1993), S. 449-455 
    Details
    ISSN: 1432-0630
    Keywords: 82.65 ; 82.50 ; 42.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The stability of a planar surface upon pulsed UV-laser irradiation is studied with special emphasis on polymer ablation. Here, we consider a two-level system in which the excitation energy is dissipated via stimulated emission, non-radiative transitions, and activated desorption of excited species. With thermal relaxation times t T≥10−10 s the ablation front turns out to become stable. This could explain the smooth surfaces obtained after pulsed UV-laser ablation of pure and stress free organic polymers. The situation is quite different for materials, for example metals, where fast thermal relaxation of the excitation energy within times, typically, t T〈10−11 s, gives rise to instabilities which result in surface roughening.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331785
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  • 9
    Electronic Resource
    Electronic Resource
    The formation of subsurface oxygen on Pt(100) (1993)
    Springer
    Applied physics 57 (1993), S. 507-511 
    Details
    ISSN: 1432-0630
    Keywords: 68.35 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract PhotoEmission Electron Microscopy (PEEM) enables imaging a surface via its work function. If a CO covered Pt(100) surface is exposed to oxygen patches are formed which appear dark in the PEEM image due to their high work function. As the surface is heated to temperatures above 650 K we observe the conversion of these dark islands into very bright ones with work functions much lower than even that of the clean surface. These findings are attributed to a change in the dipole moment of the adsorbed oxygen induced by their migration beneath the surface. A total work-function decrease of up to 1.2 eV has been evaluated independently using a Scanning Photoemission Microscope (SPM). The properties of this new kind of oxygen were also further investigated with thermal desorption spectroscopy and with Auger-electron spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331749
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  • 10
    Electronic Resource
    Electronic Resource
    Deposition and characterization of diamond epitaxial thin films on silicon substrates (1993)
    Springer
    Applied physics 57 (1993), S. 483-489 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 81.15 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Heteroepitaxial diamond growth has been attempted on mirror-polished monocrystalline (001), (111), and (110) silicon substrates by microwave plasma CVD. The surface morphology and the crystallographic properties of the films were characterized by means of Scanning Electron Microscopy (SEM), Raman spectroscopy, X-ray diffraction, and X-ray and Raman pole-figure analysis. The results demonstrate epitaxial growth of diamond on both (001) and (111) oriented silicon substrates. Preliminary results give strong evidence for substrate-induced orientation of the diamond crystallites also on (110) oriented silicon substrate. The heteroepitaxy can be assigned to the oriented covalent bonding across the interface between diamond and silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331746
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  • 11
    Electronic Resource
    Electronic Resource
    On the magnetic after-effect (MAE) in magnetite at high temperatures (1993)
    Springer
    Applied physics 56 (1993), S. 323-327 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 75.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Measurements of the magnetic after-effect in magnetite have been made in the temperature range 200 to 600 K. Important relaxation peaks have been observed in the temperature range 250 to 350 K (peak III) and 400 to 550 K (peak I). A study of both the dynamics and the parameters of the defects are consistent with an interpretation of peak III and peak I in magnetite as a combined after-effect due to octahedrally coordinated vacancies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324350
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  • 12
    Electronic Resource
    Electronic Resource
    Comparison of laser-induced etching behavior of III–V compound semiconductors (1993)
    Springer
    Applied physics 56 (1993), S. 343-348 
    Details
    ISSN: 1432-0630
    Keywords: 81.40 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Laser-induced maskless etching of III–V compound semiconductors (InSb, GaAs, and InP) in a KOH aqueous solution by irradiation with a focused argon-ion laser has been investigated to obtain high etching rates and aspect ratios of etched grooves. The etching rate at low laser power was found to depend on the carrier density of the sample and its type. With the increase of the laser power, the etching reaction becomes primarily a thermochemical reaction. High etching rates and aspect ratios have been achieved with a single scan of the laser beam. The damage induced by laser wet etching is less than that by laser dry etching, and the damage at the etched side wall is less than that at the etched bottom. Grooves with locally controlled depth and slab structures have been fabricated for application.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324353
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  • 13
    Electronic Resource
    Electronic Resource
    Ablation of polyimide (Kapton™) films by pulsed (ns) ultraviolet and infrared (9.17 μm) lasers (1993)
    Springer
    Applied physics 56 (1993), S. 417-423 
    Details
    ISSN: 1432-0630
    Keywords: 42.60 ; 82.65 ; 73.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ablation of the surface of a polyimide (Kapton™) film by single pulses of 248 nm or 308 nm radiation (∼20 ns) or 9.17 μm laser radiation (∼170 ns) was studied by photographing the emergence of the blast wave and the plume by a pulse (〈1 ns; 596 nm) of visible laser light. The dynamics of the blast wave was similar in the ultraviolet and in the infrared but the composition of the plume was obviously different. A mass of opaque solid material was ejected for as long as 2.6 μs following the IR pulse in contrast to the minute amount of solids that are seen in the ablation by UV laser pulses of ns duration. UV laser pulses of 50–400 μs duration interact with polyimide surfaces in a manner that is similar to IR laser pulses of ns duration or longer. Chemical analysis of the ablation products that are obtained under various conditions of ablation when compared to the known modes of thermal degradation of polyimide show that the reaction is a thermal process when IR laser pulses or UV laser pulses of long (〉10 μs) duration are employed. Ablation by ns UV laser pulses differs fundamentally in the chemistry of the products from all of the cases mentioned above.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00332574
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  • 14
    Electronic Resource
    Electronic Resource
    Raman spectroscopy of macroscopic defects of GaAs grown by molecular beam epitaxy (1993)
    Springer
    Applied physics 56 (1993), S. 571-574 
    Details
    ISSN: 1432-0630
    Keywords: 78.30 ; 68.55 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Macroscopic defects of the GaAs surface grown by molecular beam epitaxy (MBE) have been investigated by using a micro-probing method of Raman spectroscopy. Especially, the oval defects, the most common macroscopic defects in MBE GaAs, were focused in this study. In Raman spectroscopy for the oval defect on the (100)GaAs surface, TO phonon mode of the 269 cm−1 peak was observed. This indicates that the oval defects can include the (111) growth direction or the amorphized surface. The TO/LO intensity ratios for the defects are in the range from 0.3 to 1.0. In the sample grown under the condition that the substrate temperature is 580° C with the As/Ga ratio of 20, the density of the oval defects is about 200 cm−2 at a growth thickness of 5 μm. With increasing thickness of the epilayer, the density and the size of the α-tye oval defect increased, while the TO/LO ratio decreased. From the spatial measurement by Raman spectroscopy for the α-type oval defect, it is supposed that the α-type oval defect remains in a rather good crystalline state and its orientation along the (100) growth direction is much closer to the (111) direction, but the growth direction of the defect might tend toward the (100) direction with a thicker layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331407
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