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  • American Institute of Physics (AIP)  (8,872)
  • Oxford University Press  (5,890)
  • American Geophysical Union  (3,270)
  • Cambridge University Press  (2,364)
  • MDPI Publishing
  • Public Library of Science
  • 1990-1994  (20,396)
  • 1992  (20,396)
Collection
Keywords
Publisher
Years
  • 1990-1994  (20,396)
Year
  • 1
    Electronic Resource
    Electronic Resource
    Analysis of terbium thermodynamic characteristics for magnetic heat pump applications (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3908-3911 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Based on molecular field theory, including the effect of the field-dependent nature of Néel temperature, the entropy, and the magnetocaloric effect in terbium (Tb) have been calculated with the external field between 0 and 7 T (Tesla). The calculated results are compared with the existing experimental measurements. The maximum magnetocaloric temperature change (ΔT) is approximately 14 K near the zero-field Néel temperature (230 K) for an external field at 7 T field. This relatively large magnetocaloric effect indicates that Tb could be an attractive candidate for magnetic heat pump application. The results are then used to study the performance of heat pumps for the Carnot cycle, the constant field cycle, and the ideal regenerative cycle. The performances of these three cycles are discussed and compared.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352267
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  • 2
    Electronic Resource
    Electronic Resource
    Sheath structure around particles in low-pressure discharges (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3934-3942 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Collisionless orbit theory is used to model isolated particles in low-pressure discharges with and without the presence of negative ions. The key results are as follows: (1) Debye–Hückel theory works well for approximating the potential profile around the particle, and (2) the size of the sheath around the particle is determined by a Debye length that results from linearizing the Poisson–Vlasov equation. These results are valid as long as the ratio of particle radius to Debye length is small and the ratio of Debye length to mean free path is small.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352245
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  • 3
    Electronic Resource
    Electronic Resource
    Continuum modeling of radio-frequency glow discharges. I. Theory and results for electropositive and electronegative gases (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3971-3987 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A self-consistent continuum (fluid) model for a radio-frequency discharge is presented. The model is one dimensional, incorporates an electron energy balance, and is valid for both electropositive and electronegative discharges. A connection of the fluid model with the underlying physics is presented: issues such as the derivation of the fluid equations from moments of the Boltzmann equation, the closure of the set of moments, and the fundamental assumptions behind the fluid equations are discussed. A detailed set of results for an electropositive and an electronegative discharge is presented, and contrasted. The sustaining mechanisms and the electrical characteristics of the two discharges are also discussed. Comparison with experimental data of spatially and temporally resolved plasma induced emission is successfully done.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352250
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  • 4
    Electronic Resource
    Electronic Resource
    Plastic hollow fibers as a selective infrared radiation transmitting medium (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3878-3883 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plastic hollow waveguides (used as fibers) for infrared (IR) transmission were made from plastic tubes covered, on the internal wall, with a metal layer (Ag) and growing a dielectric thin (AgI) overlayer by direct iodination on it. The existence of several absorption lines at given wavelengths in the middle infrared (mid-IR) region is predicted theoretically and measured experimentally. From the wavelengths of absorption lines the thickness of the AgI film has been computed. The average thickness of the AgI in the hollow waveguide increased with the iodination time and with the concentration of the iodine solution. The crystal size of the AgI was increased with the increase of the AgI thickness. By controlling the iodination process it was possible to make waveguides which can be employed as filters for various wavelengths of the transmitted mid-IR radiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352264
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  • 5
    Electronic Resource
    Electronic Resource
    Self-consistent electron cyclotron resonance absorption in a plasma with varying parameters (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3924-3933 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A formalism is developed for numerically calculating reflection and absorption of right-hand polarized waves and reflection of left-hand polarized waves propagating into a cyclotron resonance zone in a medium in which both magnetic field and plasma density are varying. The results are shown to agree with previous analytic calculations in the limit of constant density, weak collisionality, and linearly varying magnetic field, where the analytic calculation applies. The formalism is then applied to a plasma with general field and density variations, and arbitrary collisionality. The absorption and reflections are calculated for various boundary conditions along the propagation path, showing that there is an optimum density for power absorption. The collisionless absorption in the resonance zone, calculated from the single particle heating averaged over the flux is shown to be consistent with the linear wave absorption at low absorption and collisionality. At high absorption a prescription for bringing the two calculation methods into agreement is advanced. The results are used to qualitatively explain some previously puzzling experimental observations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352244
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  • 6
    Electronic Resource
    Electronic Resource
    Numerical studies of streamer to arc transition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3957-3965 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The numerical calculations of the transition phase of a streamer to an arc in nitrogen is reported. The proposed model includes an extensive set of collisional processes leading to gas heating. Radial variations of the species concentration and temperature are included in the calculation. Starting with the streamer parameters as an initial condition, the calculations are carried out until "quasisteady'' state arc conditions are reached. The time evolution of the species concentration, the discharge voltage, and the current are discussed. The steady-state arc temperatures, radii, currents, and voltages are compared with available experimental data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352248
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  • 7
    Electronic Resource
    Electronic Resource
    Lateral spread effects in the implantation of Ar+, Xe+, and Hg+ in Si3N4 films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4003-4006 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 80–100 keV Ar+, 200 keV Xe+, and 200 keV Hg+ were implanted into Si3N4 films under angles of 0°, 45°, 60°, and 75°. Both normal and oblique incidence Rutherford backscattering of 2.1 MeV He ions have been used to study tilted angle implantation, i.e., the lateral spread of Ar, Xe, and Hg ions in the Si3N4 films. The results extracted are compared with the simulation of transport of ions in matter (TRIM'89 code). The experimental lateral spread seems to be in good agreement with the TRIM'89 prediction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352252
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  • 8
    Electronic Resource
    Electronic Resource
    Multiplication of misfit dislocations in epitaxial layers (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4031-4035 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conditions for operation of two multiplication mechanisms in strained layers are analyzed. These are spiral and Frank–Read type sources. It is shown that a minimum thickness is required for their operation, of the order of four times the critical thickness for the bending over of threading dislocations. The implications for strain relief of mismatched layers are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352257
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  • 9
    Electronic Resource
    Electronic Resource
    Thermally stable non-gold Ohmic contacts to n-type GaAs. I. NiGe contact metal (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4183-4190 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: "Nongold'' NiGe Ohmic contacts were developed by a lift-off and annealing technique that was extensively used to fabricate the conventional AuGeNi contacts. The optimum conditions to prepare thermally stable, low resistance NiGe Ohmic contacts were determined by changing the Ge concentrations of the NiGe contacts from 13 to 43 at. %, and the deposition sequences of the Ni and Ge layers. Contact resistances of ∼0.8 Ω mm were obtained for both two-layered Ni/Ge and three-layered Ni/Ge/Ni contacts, with Ge concentrations of ∼38 at. % after annealing at 600 °C. The thermal stability of the electrical properties during subsequent annealing at 400 °C after contact formation was found to be influenced by the microstructure at the GaAs/metal interface. The excellent stability was obtained only when the NiGe contacts formed high melting point NiGe compounds. The present result indicated that removal of Au from the AuGeNi contacts was not satisfactory enough to improve the thermal stability of the AuGeNi contacts after contact formation. A model for the current transport mechanism through the GaAs/NiGe interface was also proposed by correlating the electrical properties and the microstructure. This model explained well the dependences of the contact resistances on the Ge concentrations and the deposition sequence of the Ni and Ge layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352228
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  • 10
    Electronic Resource
    Electronic Resource
    The capacitance-voltage characteristics and hydrogen concentration in phospho-silicate glass films: Relation to phosphorus concentration and annealing effects (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4208-4213 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Capacitance-voltage (C-V) characteristics of the low-pressure chemical vapor deposited phospho-silicate glass (P-glass) films deposited on thin (∼250 A(ring)) thermal SiO2 films on silicon have been investigated as a function of the phosphorus content and rapid thermal annealing in the temperature range of room temperature to 450 °C carried out in various ambients. Simultaneously, the quantitative hydrogen concentration depth profiles of both as-deposited and annealed oxide films were obtained using the nuclear reaction technique. The C-V characteristics were found to be related to the charges in the oxide. The charge density, in turn, is controlled by both the phosphorus and the hydrogen (hydrogenous species) concentration in the films. An interactive relationship that controls the C-V characteristics is postulated between the presence of phosphorus and hydrogen and their concentrations in these oxides. A schematic model is presented that also postulates that hydrogenous species of two different characters are present in these films: one that easily comes out of the film at low temperature annealing and the other that comes out at significantly higher temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352232
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