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  • Articles  (8)
  • Data
  • 61.70  (6)
  • 36.40
  • Springer  (8)
  • Annual Reviews
  • 1990-1994  (8)
  • 1980-1984
  • 1991  (8)
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (8)
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  • Articles  (8)
  • Data
Source
Keywords
Publisher
  • Springer  (8)
  • Annual Reviews
Years
  • 1990-1994  (8)
  • 1980-1984
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Topic
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (8)
  • Physics  (65)
  • 1
    Electronic Resource
    Electronic Resource
    Cluster emission under ion bombardment of metallic targets (1991)
    Springer
    Applied physics 52 (1991), S. 213-217 
    Details
    ISSN: 1432-0630
    Keywords: 36.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Mass spectroscopic studies of the neutral particles sputtered by Ar+ ions at 8 keV from polycrystaline samples have been performed, using non-resonant laser ionization and subsequent time-of-flight mass spectroscopy. Besides sputtered atoms, also dimer and trimer contributions in the order of 10−1 to 10−2 and 10−3 to 10−4, respectively, are found in the sputtered flux. The data obtained here together with previously published data by other groups for different bombarding energies provide strong support for the validity of the recombination model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324422
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  • 2
    Electronic Resource
    Electronic Resource
    Dislocations on Ag(111) (1991)
    Springer
    Applied physics 52 (1991), S. 218-221 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 61.70Ph
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Various dislocations on Ag(111) were imaged with a scanning tunneling microscope, e.g. screw dislocations, Lomer-Cottrell locks and stacking fault tetrahedron. The distortion field near a screw dislocation was measured.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324423
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  • 3
    Electronic Resource
    Electronic Resource
    A study of sputter-induced defects in magnetron-sputtered CoSi2 and TiSi2 Schottky barriers on n- and p-type GaP (1991)
    Springer
    Applied physics 52 (1991), S. 60-64 
    Details
    ISSN: 1432-0630
    Keywords: 73.30 ; 61.70 ; 81.15C
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Magnetron-sputtered CoSi2 and TiSi2 Schottky barriers on n- and p-type GaP were investigated. Their hitherto unknown barrier heights were determined to be 0.98 eV (for CoSi2/n-GaP and CoSi2/p-GaP), 0.91 eV (for TiSi2/n-GaP), and 0.90 eV (for TiSi2/p-GaP). It was found that magnetron-sputtering induced a compensated layer near the surface, both for n- and p-type GaP, with a thickness of about 0.05 μm. As the dependence of the shift of the Mott-Schottky intercept with the V-axis on the substrate dopant concentration obeyed some specific law, we proposed that the defects are neutral complexes of dopant ions and sputter-induced native defects. These native defects were assumed to depend on the Fermi level position, namely the PGa antisite and the VP vacancy for p-GaP and the VGa vacancy for n-GaP. The conversion between these defects occurs by nearest neighbour hopping of a phosphorus atom. The Schottky barrier heights obtained on p-GaP could be explained by Fermi level pinning at the surface due to the PGa defects. This could not be confirmed by n-GaP as the energy level position of the VGa was not available. The defects could be annealed out between 200° C and 300° C and the associated change of the Schottky barrier height corroborated the proposed model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323685
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  • 4
    Electronic Resource
    Electronic Resource
    Laser-stimulated desorption of potassium atoms (1991)
    Springer
    Applied physics 52 (1991), S. 445-447 
    Details
    ISSN: 1432-0630
    Keywords: 82.65 ; 36.40 ; 73.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Desorption of K atoms by laser-excitation of surface plasmons in small K particles is reported. The desorption rate has been measured for different laser wavelengths and particle sizes. Time-of-flight measurements reveal a kinetic energy of the desorbed atoms of Ekin=0.13(3) eV. From the experimental data it is concluded that the desorption mechanism is non-thermal in nature. Comparison of the results reported here with our earlier work on Na desorption is made.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323657
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  • 5
    Electronic Resource
    Electronic Resource
    Properties of silicon-electrolyte junctions and their application to silicon characterization (1991)
    Springer
    Applied physics 53 (1991), S. 8-19 
    Details
    ISSN: 1432-0630
    Keywords: 82.45 ; 61.70 ; 68.45
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A number of interesting and still not fully understood phenomena occur if silicon is used as an electrode in an electrochemical cell. Effects include porous silicon layer (PSL) formation with features on a nanometer scale, surface roughening on a micrometer scale, quantum efficiencies for light generated currents much larger than 1, preferential etching of defects, electropolishing, and voltage or current oscillations. It is shown that despite the complexities of chemical reactions involved, a basic understanding of the electrode behavior is possible from a semiconductor physics point of view and that it can be advantageous to use the silicon — electrolyte junction for analytical purposes. Topics such as defect characterization, measurements of minority carrier diffusion length, or surface recombination velocities can be addressed in unique ways by taking advantage of particular properties of the silicon — hydrofluoric acid system. Based on the general description of the Si — electrolyte junction given in this paper, strengths and limitations of some electrochemical methods are discussed in some detail and illustrated by examples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323428
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  • 6
    Electronic Resource
    Electronic Resource
    Electrical activity of dislocations: Prospects for practical utilization (1991)
    Springer
    Applied physics 53 (1991), S. 189-193 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electrical activity of interfacial misfit dislocations in silicon has been examined using the electron beam induced current technique (EBIC) in a scanning electron microscope. “Clean” misfit dislocations, i.e. no EBIC contrast, formed during high-temperature Si(Ge) chemical vapor epitaxy were studied. These defects were subsequently decorated with known metallic impurities (Au and Ni) by diffusion at 400° C to 1130° C from a back-side evaporated layer. Qualitative analysis of the electrical activity in relation to the energy levels anticipated for the clean or decorated dislocations is presented. Of particular interest is the case of defect-induced conductivity type inversion which occurred both at the top surface and at the buried dislocated interfaces of the multilayer. The prospects for using dislocations in a beneficial manner as active elements in electronic devices are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324249
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  • 7
    Electronic Resource
    Electronic Resource
    Ion scattering spectroscopy and scanning tunneling microscopy: A powerful combination for surface structure analysis (1991)
    Springer
    Applied physics 53 (1991), S. 388-402 
    Details
    ISSN: 1432-0630
    Keywords: 68.35 ; 61.16 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Low-energy ion backscattering and scanning tunneling microscopy (STM) have been used in combination to get better insight into the field of surface crystallography. The synergic effectiveness resulting from the complementing character of the two methods has been exemplified at clean NiAl(111) and for oxygen and nitrogen adsorption on Cu(110). The position of the atom cores is accessible by the low-energy noble gas impact collision ion scattering spectroscopy with neutral detection (NICISS). As a technique averaging over a macroscopic area of the sample, NICISS is better suited to supply information on features of completely developed phases, either on clean or adsorbate saturated surfaces. Additional information, on the other hand, can be gained by scanning tunneling microscopy (STM), which as a powerful local probe may be used to image surfaces with atomic resolution and to monitor defects, steps and the growth kinetics of e.g. adsorption-induced phase changes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00348151
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  • 8
    Electronic Resource
    Electronic Resource
    Photoconductivity and light-induced absorption in KNbO3:Fe (1991)
    Springer
    Applied physics 53 (1991), S. 81-86 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 72.40 ; 78.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Measurements of photoconductivity and light-induced absorption in KNbO3: Fe are performed at different light intensities and crystal temperatures. The results are interpreted in terms of a two-center charge transport model. Different model parameters may be evaluated from the experimental data. A complete set of parameters is suggested explaining the dependences of photoconductivity and light-induced absorption on light intensity and temperature for the KNbO3: Fe crystal investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323439
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