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  • Articles  (6)
  • 61.80  (6)
  • Springer  (6)
  • American Meteorological Society
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  • 2020-2022
  • 2015-2019
  • 2005-2009
  • 1985-1989  (6)
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  • 1989  (6)
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (6)
  • Natural Sciences in General
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  • Energy, Environment Protection, Nuclear Power Engineering
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  • Articles  (6)
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  • Springer  (6)
  • American Meteorological Society
  • Wiley
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  • 2020-2022
  • 2015-2019
  • 2005-2009
  • 1985-1989  (6)
  • 1960-1964
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (6)
  • Natural Sciences in General
  • Geosciences
  • Energy, Environment Protection, Nuclear Power Engineering
  • Physics  (6)
  • 1
    Electronic Resource
    Electronic Resource
    Dependence of anomalous phosphorus diffusion in silicon on depth position of defects created by ion implantation (1989)
    Springer
    Applied physics 48 (1989), S. 255-260 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Transient enhanced diffusion of phosphorus in silicon has been investigated for implants below and above the threshold for a complete amorphization. Rapid thermal processes (electron beam) and conventional furnaces have been used for the annealing. In the case of implants below amorphization, a strong enhanced diffusion, proportional to the amount of damage produced, has been observed. The extent of the phenomenon is practically independent of the damage depth position. In contrast to this, the formation of extended defects at the original amorphous-crystalline interface makes the diffusivity strongly dependent on depth in the case of post-amorphized samples. No enhanced diffusion effect is observed if the dopant is confined in the amorphous layer, while a remarkable increase in the diffusivity is detected for the dopant located in the crystalline region beyond the amorphous-crystalline interface. Damage distribution after implantation and its evolution during annealing have been determined by double crystal x-ray diffraction and correlated to anomalous P diffusivity. A qualitative distribution of the interstitial excess in solution in the silicon lattice during annealing is proposed for the two different cases. These point defects, released by the dissolution of the interstitial clusters produced by the implanted ions, have been identified as responsible for the observed enhanced P diffusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00619395
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  • 2
    Electronic Resource
    Electronic Resource
    Ion beam mixing of Al/Fe binary systems (1989)
    Springer
    Applied physics 48 (1989), S. 347-354 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 68.35Fx
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ion beam mixing of Al layers on Fe and Fe layers on Al are studied by irradiation with 200 keV Xe+-ions at room temperature as a function of the thickness of the top layer and of the ion fluence from 5×1015 to 7.5×1016ions/cm2. Deconvolution procedures are needed to separate the influence of the ion sputter profiling by AES from the ion beam induced mixing effects. Auger electron spectroscopy data reveal that the mixing induced diffusivity ought to be considered as a function of concentration. The diffusion coefficients are evaluated by the Boltzmann-Matano method. A strong dependence of the diffusion coefficients and also the mixing efficiencies from the ion dose, the depth of the interface and the nuclear energy deposition were observed. Results are discussed in terms of the diffusional and collisional mixing as well as chemical affinity of both Fe and Al.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618897
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  • 3
    Electronic Resource
    Electronic Resource
    Damage studies in cubic ZnSe single crystals grown from melt (1989)
    Springer
    Applied physics 48 (1989), S. 451-456 
    Details
    ISSN: 1432-0630
    Keywords: 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A microscopy study of the morphology of the damage produced by TEA-CO2 laser pulses in cubic ZnSe single crystals grown from melt is presented. The observed bulk filamentary damage consists of relatively uniformly distributed “elementary” damaged zones, located at specific sites where absorbing inclusions could exist. Transmission electron microscopy and laser ion mass spectroscopy investigations revealed the absorbing inclusions to be thin graphite foils, originating from the crucible used for crystal growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00619717
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  • 4
    Electronic Resource
    Electronic Resource
    Temperature characteristics of positron trapping at defects in electron-irradiated silicon (1989)
    Springer
    Applied physics 49 (1989), S. 659-664 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80 ; 78.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Positron-annihilation lifetime and Doppler-broadening measurements are used to investigate defects in silicon irradiated at 373 K with 6 MeV electrons to a dose of 1×l019e/cm2. In the unirradiated silicon sample (p type) a temperature-independent behaviour of the bulk-lifetime is observed in the temperature interval 110–500 K with a constant value of 220±1 ps. The slight effect observed on the S-parameter evolution is explained taking into account the thermal expansion of the lattice. The lifetime results obtained at 80 K and at 300 K after isochronal annealing as well as the behaviour of the intensity of the second lifetime componentI 2 during lifetime measurements below the irradiation temperature in the irradiated silicon sample (n type), clearly indicate the temperature dependent characteristics of the positron trapping cross section σt(T) ∝T n withn= −1.905±0.016. From isochronal annealing results, an annealing stage is observed in which di-vacancies agglomerate into quadri-vacancies. The mean positron lifetime in those quadri-vacancies is 350 ps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616990
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  • 5
    Electronic Resource
    Electronic Resource
    Residual defects in high-energy B-, P- and As-implanted Si by rapid thermal annealing (1989)
    Springer
    Applied physics 49 (1989), S. 149-155 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The annealing behavior of secondary defects generated in 2 MeV B- and P-, and 1 MeV As-implanted (100) Si with a dose of 5×1014 ions/cm2 has been investigated after rapid thermal annealing (RTA) treatment using cross-sectional TEM observations. The results are compared with ones obtained by furnace annealing (FA) treatment. RTA is more effective than FA for the defect density reduction of deep defects existing beyond 2 μm depths from the surface in B- and P-implanted layers. However, when a dislocation loop diameter is close to the substrate surface, as in the case of As implantation, the loops climb up to the surface by 1250 °C RTA. Moreover, repeated RTA is effective for the suppression of secondary defect growth in B- and P-implanted layers, while there is no difference in defect density or configuration for As implantation between repeated and simple RTA.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616293
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  • 6
    Electronic Resource
    Electronic Resource
    Photoacoustic monitoring of damage in ion implanted and annealed si layers (1989)
    Springer
    Applied physics 49 (1989), S. 205-209 
    Details
    ISSN: 1432-0630
    Keywords: 78.20 ; 61.80 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The photoacoustic technique has been used to characterize ion implanted Si layers, as a function of the implantation conditions of ion dose and energy and of thermal annealing conditions, through the determination of the material thermal conductivity and optical absorption coefficient. It was found that the technique can discriminate between amorphous material obtained under different implantation conditions. Regarding the annealed samples, different results have been obtained for amorphous as-implanted, fine grain polycrystalline, highly defective single crystalline and defect-free single crystalline materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616300
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