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  • Articles  (8)
  • 85.30  (8)
  • 1985-1989  (8)
  • 1950-1954
  • 1987  (8)
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (8)
  • Mathematics
  • Technology
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  • Articles  (8)
Source
Keywords
Publisher
Years
  • 1985-1989  (8)
  • 1950-1954
Year
Topic
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (8)
  • Mathematics
  • Technology
  • Physics  (8)
  • 1
    Electronic Resource
    Electronic Resource
    Transient negative photoconductivity in silicon doped with gold (1987)
    Springer
    Applied physics 43 (1987), S. 205-208 
    Details
    ISSN: 1432-0630
    Keywords: 72.40 ; 72.20 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A transient negative photoconductivity phenomenon observed in silicon doped with gold atoms by an appropriate diffusion condition has been investigated. The transient negative photoconductivity could be observed with a diode doped with gold atoms under intrinsic light-pulse illumination. In the recovery process of the transient negative photoconductivity to a steady-state dark level, two kind of time constants were observed, which may be related with the emission of electrons from gold level. A dependence of the magnitude of the peak value on the ambient temperature was observed; a qualitative explanation is given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615977
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  • 2
    Electronic Resource
    Electronic Resource
    Instability of photoexcited electron-hole plasma in short semiconductor structures (1987)
    Springer
    Applied physics 42 (1987), S. 41-43 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The instability of the electron-hole plasma produced by continuous photoexcitation in short semiconductor structures is investigated theoretically. The applied electric field is considerably disturbed by photogenerated charge carriers. At a sufficiently intensive photogeneration plasma instability occurs. The frequency of current oscillations due to the instability, as shown by numerical simulation for a GaAs structure, is in the range of 1011–1012s−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618157
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  • 3
    Electronic Resource
    Electronic Resource
    On the gate capacitance of MOS structures of kane-type semiconductors under magnetic quantization (1987)
    Springer
    Applied physics 42 (1987), S. 331-336 
    Details
    ISSN: 1432-0630
    Keywords: 73 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An attempt is made to formulate the gate capacitance of MOS structures of Kane-type semiconductors under magnetic quantization, without any approximations of weak or strong electric field limits, on the basis of the fourth-order effective mass theory and taking into account the interactions of the conduction, light-hole, heavy-hole, and split-off bands. It is found, taking n-channel Hg1−x Cd x Te as an example, that the gate capacitance exhibits spiky oscillations with changing magnetic field, which is in qualitative agreement with experimental observations, reported elsewhere, in MOS structures of the same semiconductor. The corresponding results for n-channel inversion layers on parabolic semiconductors are also obtained from the expressions derived.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616572
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  • 4
    Electronic Resource
    Electronic Resource
    The influence of graphite boat material on the purity of LPE InGaAs (1987)
    Springer
    Applied physics 43 (1987), S. 37-40 
    Details
    ISSN: 1432-0630
    Keywords: 81.10 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract This paper describes the purity of LPE InGaAs layers grown in graphite boats, machined from various graphite materials. The influence of the material is clearly visible if the growth solution is sufficiently pure. Carrier concentrations n〈2×l015 cm−3 and mobilitiesμ(77 K)〉 38000 cm2/Vs are routinely achieved for suitable graphite materials already from the third run of a new “large” boat applying a prebake of only 15 h. “Small” boats yield even better results (n=0.5×1015 cm−3 andμ(77 K)=49500 m2/Vs). The sticking of In-rich solutions to the graphite does not depend on the material but is solely dependent on the surface roughness. The problem of graphite particle abrasion is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615203
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  • 5
    Electronic Resource
    Electronic Resource
    Non-exponential dark capacitance transients from red-emitting GaP LED's — Field and edge effects on the 0.75 eV centre (1987)
    Springer
    Applied physics 42 (1987), S. 301-302 
    Details
    ISSN: 1432-0630
    Keywords: 71.55 ; 85.60 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616567
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  • 6
    Electronic Resource
    Electronic Resource
    Carrier frequency-dependent intrinsic parameters in an ion-implanted silicon photo-MESFET (1987)
    Springer
    Applied physics 44 (1987), S. 361-364 
    Details
    ISSN: 1432-0630
    Keywords: 72.40 ; 78.55 ; 85.30 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Carrier frequency-dependent intrinsic parameters of an ion-implanted silicon photo-MESFET have been analysed theoretically. The internal gate source capacitanceC gs is found to increase with increasing carrier frequency under the normally OFF condition and the change is small under the normally ON condition. Also, the internal drain-source resistanceR ds increases with frequency at a fixed flux density and wavelength of operation. The ion-implanted photo-MESFET could become useful as optically controlled switching device in digital circuits.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00624604
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  • 7
    Electronic Resource
    Electronic Resource
    Excess capacitance of ZnO-Au varactors (1987)
    Springer
    Applied physics 42 (1987), S. 249-255 
    Details
    ISSN: 1432-0630
    Keywords: 73.40 ; 85.30 ; 71.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Doped ZnO single crystals were deposited with gold and indium in 1×10−8 Torr vacuum. The lithium-doped ZnO single crystals and the gold interface revealed not only a Schottky diode but also varactor characteristics. TheI-V andC-V characteristics of ZnO:Li-Au devices were determined in the 0–140 mV and 0–1.5 V ranges. The frequency dependence of ZnO:Li-Au varactors was investigated in the 6–550 kHz range and the value of the most efficient varactor frequency was found to be 50 kHz for the lithium-doped samples prepared. To bring further insight into the matter the concept of excess capacitance was introduced and 1/C 2=f(−V) curves were rearranged between 0–150 mV where Schottky characteristics are non-linear. The excess capacitance values of lithium-doped varactors were determined at four different frequencies and ranged from 26 pF at 50 kHz to 70 pF at 6kHz. Finally, the bulk donor concentrations of the single crystals were calculated from the modifiedC-V curves to beN D= 3×1020 m−3. On the other hand, the bulk donor concentration determined from the non-modifiedC-V curves wasN D′=1.02×1022 m−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620609
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  • 8
    Electronic Resource
    Electronic Resource
    MITATT mode in DDR heterostructure Impatt (1987)
    Springer
    Applied physics 42 (1987), S. 303-309 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 79.20 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Large signal characterisation of double heterostructure DDR Impatt diode has been carried out in the millimeter-wave range considering the MITATT mode of operation. The structure of the device is p+-p2-p1-n1-n2-n+ where impact ionisation and tunneling takes place in the p1-n1 region. In this study we have considered two well-known heterostructures, e.g., InP/GaInAs/InP and InP/InGaAsP/InP and one nonconventional structure GaAs/InP/GaAs. The theoretical results of the performances of these devices as regards of output power, efficiency, and negative conductance revealed that the structures are quite promising as the source of power in the millimeter-wave range. The analysis may be used for other mm wave DDR heterostructure Impatts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616568
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