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  • Articles  (9)
  • 79.20  (9)
  • 1985-1989  (9)
  • 1950-1954
  • 1987  (9)
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (9)
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  • Articles  (9)
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Keywords
Publisher
Years
  • 1985-1989  (9)
  • 1950-1954
Year
Topic
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (9)
  • Physics  (10)
  • 1
    Electronic Resource
    Electronic Resource
    Theoretical characterisation of a superlattice avalanche photodiode (1987)
    Springer
    Applied physics 42 (1987), S. 173-177 
    Details
    ISSN: 1432-0630
    Keywords: 72.15 ; 72.40 ; 78.55 ; 79.20 ; 85.40 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A superlattice avalanche photodiode using III–V materials is expected to be used in long-distance fiberoptic communication systems in the 1.3 to 1.55 μm wavelength range. Theoretical studies have been made on the effective ionization rates of electrons and holes of the device, I–V characteristic and the frequency response characteristic of the Al x Ga1−x As/GaAs superlattice p+-i-n+ structure. It is observed that theα/β ratio of the device increases with the field and the bandwidth of the response curve increases with decrease in the dc multiplication gain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620596
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  • 2
    Electronic Resource
    Electronic Resource
    Secondary ion emission from binary Fe-Cr, Fe-Ni, Cr-Ni and ternary Fe-Cr-Ni alloys: Chemical and physical matrix effects (1987)
    Springer
    Applied physics 42 (1987), S. 239-243 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 07.80 ; 07.75
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Secondary ion emission from Fe-Cr, Fe-Ni, Cr-Ni binary alloys and Fe-Cr-Ni ternary alloys (concentration range 10–90% of the alloying element) bombarded with 3 keV Xe+ ions has been investigated as a function of concentration of the studied element in the multicomponent system. The linear increase of the secondary ion intensity with concentration of the element in the sample was found only for a low-concentration region. There are pronounced nonlinearities in the medium and high-concentration regions. A possible explanation for such nonlinearities based on chemical and physical matrix effects is proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620607
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  • 3
    Electronic Resource
    Electronic Resource
    Measurement ofK αcross sections and fluorescence yields for elements in the range 42≦Z≦57 using radioisotope X-ray fluorescence (1987)
    Springer
    Applied physics 43 (1987), S. 71-73 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract TheK α x-ray fluorescence (XRF) cross sections have been experimentally determined for elements in the range 42≦Z≦57 at excitation energy of 59.54keV associated with gamma rays of Am-241 radioisotope. In addition, measurements of XRF yields of theK shell (w k) for the same elements at the same excitation energy have also been carried out. Our measurements were shown to agree with theoretical calculations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615209
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  • 4
    Electronic Resource
    Electronic Resource
    Electron ionization rate in III–V ternary semiconductors (1987)
    Springer
    Applied physics 43 (1987), S. 105-109 
    Details
    ISSN: 1432-0630
    Keywords: 72.15 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Theoretical calculations are presented for the ionization rate of electrons in III–V ternary semiconductor compounds considering alloy scattering and carrier-carrier interaction, in addition to optical phonon scattering and ionization scattering. However, alloy scattering is found to be a weak interaction. Fairly good agreement is obtained for Ga1−x In x As withx=0.14 and 0.53 with the experimental results and for Ga0.5 Al0.5 As with the existing theoretical result which used an indirect method. The alloy scattering potential has been taken in the form of energy band-gap difference. The calculations can be used for any ternary semi-conductor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617961
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  • 5
    Electronic Resource
    Electronic Resource
    Application of auger ewlectron depth profile analysis to thin film interdiffusion studies (1987)
    Springer
    Applied physics 42 (1987), S. 219-226 
    Details
    ISSN: 1432-0630
    Keywords: 66.30 ; 68.60 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Because of its good depth resolution, the Auger electron depth profile analysis allows to investigate diffusion phenomena in thin films directly. Complicated calibration procedures, however, are needed to correct for the matrix effects inherent in the Auger method, particularly artefacts due to the sputtering process. In this paper, two types of thin-film systems are presented in order to determine diffusion coefficients from depth profiles: double-layer and periodic multi-layer film structures. Compared to the double-layer films, the multi-layer structure has the advantage of less stringent requirements on depth resolution and allows to detect smaller diffusion effects. Finally, it is shown how grain boundary and bulk diffusion data can be extracted separately from the composition profiles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620604
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  • 6
    Electronic Resource
    Electronic Resource
    XRF induced by PIXE: Comparison with radioisotope XRF (1987)
    Springer
    Applied physics 42 (1987), S. 327-329 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract XRF induced by PIXE (XRF-PIXE) using silver as a primary target was compared with a standard radioisotope XRF system using Cd-109 as a primary exciting source, for the analysis of single-element thin standards. The sensitivity of the two methods were determined for elements from Cl to Mo. XRF is found to be more sensitive for elements from Cl to Mn, whereas XRF-PIXE is found to be more suitable for elements from Fe to Mo. Both techniques can be considered as complementary to each other.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616571
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  • 7
    Electronic Resource
    Electronic Resource
    MITATT mode in DDR heterostructure Impatt (1987)
    Springer
    Applied physics 42 (1987), S. 303-309 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 79.20 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Large signal characterisation of double heterostructure DDR Impatt diode has been carried out in the millimeter-wave range considering the MITATT mode of operation. The structure of the device is p+-p2-p1-n1-n2-n+ where impact ionisation and tunneling takes place in the p1-n1 region. In this study we have considered two well-known heterostructures, e.g., InP/GaInAs/InP and InP/InGaAsP/InP and one nonconventional structure GaAs/InP/GaAs. The theoretical results of the performances of these devices as regards of output power, efficiency, and negative conductance revealed that the structures are quite promising as the source of power in the millimeter-wave range. The analysis may be used for other mm wave DDR heterostructure Impatts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616568
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  • 8
    Electronic Resource
    Electronic Resource
    Hot-electron drift velocity in III–V semiconductors under the condition of impact ionization (1987)
    Springer
    Applied physics 43 (1987), S. 53-60 
    Details
    ISSN: 1432-0630
    Keywords: 72.15 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A calculation has been carried out for the drift velocity of electrons in the highfield region under the condition of impact ionization in III–V semiconductor compounds. The energy-balance equation of the one-electron model has been solved considering alloy scattering and carrier-carrier interaction, in addition to optical phonon and ionization scattering. Fairly good agreement is obtained for GaAs with the available experimental and Monte-Carlo results. Graphs for the high-field drift velocity has also been plotted for Ga1−x InxAs (x = 0.53) at different ratios of ionization mean-free path and optical phonon mean-free path. The plot of high-field drift velocity versus ionization rate reveals that the high-field drift velocity strongly depends on the ionization rate of carriers, and vice versa.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615206
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  • 9
    Electronic Resource
    Electronic Resource
    Neutralization of multiply charged ions at a surface (1987)
    Springer
    Applied physics 44 (1987), S. 31-41 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We report on emission processes induced by particle-solid interaction involving ions with a large potential (i.e., high ion charge state) and low kinetic energy. After an introduction into existing neutralization models for ion scattering at a metal surface a detailed discussion on the electron emission processes is presented. The number of electrons emitted per incident ion is shown to be proportional to the potential energy only within a restricted parameter field involving charge state and ion velocity. The kinetic energy distribution of emitted electrons is dominated by low-energetic electrons (≦30 eV), while inner shell holes of the projectile ion can initiate high-energetic characteristic Auger electrons. The presence of inner shell holes is also of importance for the charge state of highly charged ions being scattered at surfaces whereas normally the charge state distribution of scattered ions depends on the impact parameter only. The influence of the primary ion charge state on the sputtering yield of insulating surfaces is seen for the charge state of sputtered particles, whereas the total sputtering yield seems to be insensitive. This question is still subject to controversy, however. Photon emission dependent on the charge state of the impinging ion has been observed up to now only for extremely highly charged ions as hydrogenlike Ar or Kr.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617889
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