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  • Articles  (24)
  • 79.20  (24)
  • 1985-1989  (24)
  • 1950-1954
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (24)
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  • Articles  (24)
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (24)
  • Physics  (30)
  • 1
    Electronic Resource
    Electronic Resource
    Experimental and theoretical investigations into the origin of cross-contamination effects observed in a quadrupole-based SIMS instrument (1985)
    Springer
    Applied physics 38 (1985), S. 235-252 
    Details
    ISSN: 1432-0630
    Keywords: 07.75 ; 61.70 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The minimum-detection limits achievable in SIMS analyses are often determined by transport of material from surrounding surfaces to the bombarded sample. This cross-contamination (or memory) effect was studied in great detail, both experimentally and theoretically. The measurements were performed using a quadrupole-based ion microprobe operated at a secondary-ion extraction voltage of less than 200 V (primary ions mostly 8keV O 2 + ). It was found that the flux of particles liberated from surrounding surfaces consists of neutrals as well as positive and negative ions. Contaminant species condensing on the bombarded sample could be discriminated from other backsputtered species through differences in their apparent energy spectra and by other means. The apparent concentration due to material deposited on the sample surface was directly proportional to the bombarded area. For an area of 1 mm2 the maximum apparent concentration of Si in GaAs amounted to ∼5 × 1016atoms/cm3. The rate of contamination decreased strongly with increasing spacing between the bombarded sample and the collector. The intensities of backsputtered ions and neutrals increased strongly with increasing mass of the target atoms (factor of 10 to 50 due to a change from carbon to gold). The effect of the primary ion mass (O 2 + , Ne+, and Xe+) and energy (5–10keV) was comparatively small. During prolonged bombardment of one particular target material, the rate of contamination due to species not contained in the sample decreased exponentially with increasing fluence. In order to explain the experimental results a model is presented in which the backsputtering effect is attributed to bombardment of surrounding walls by high-energy particles reflected or sputtered from the analysed sample. The level of sample contamination is described by a formula which contains only measurable quantities. Cross-contamination efficiencies are worked out in detail using calculated energy spectra of sputtered and reflected particles in combination with the energy dependence of the sputtering yield of the assumed wall material. The experimental findings are shown to be good agreement with the essential predictions of the model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616059
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  • 2
    Electronic Resource
    Electronic Resource
    Si etching affected by ir laser irradiation (1985)
    Springer
    Applied physics 37 (1985), S. 117-119 
    Details
    ISSN: 1432-0630
    Keywords: 82.50 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Silicon was etched in an aqueous solution of sodium hydroxide under ir laser irradiation. Two types of lasers were used, a Nd:YAG laser with a wavelength of λ=1.06 μm and a CO2 laser with λ=10.6 μm. Small-size blind holes, through holes and reliefs were formed on a Si target, and even a special type of hole can be formed with help of a CO2 laser, namely a blind hole with a hillock in its center.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618861
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  • 3
    Electronic Resource
    Electronic Resource
    Theoretical characterisation of a superlattice avalanche photodiode (1987)
    Springer
    Applied physics 42 (1987), S. 173-177 
    Details
    ISSN: 1432-0630
    Keywords: 72.15 ; 72.40 ; 78.55 ; 79.20 ; 85.40 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A superlattice avalanche photodiode using III–V materials is expected to be used in long-distance fiberoptic communication systems in the 1.3 to 1.55 μm wavelength range. Theoretical studies have been made on the effective ionization rates of electrons and holes of the device, I–V characteristic and the frequency response characteristic of the Al x Ga1−x As/GaAs superlattice p+-i-n+ structure. It is observed that theα/β ratio of the device increases with the field and the bandwidth of the response curve increases with decrease in the dc multiplication gain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620596
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  • 4
    Electronic Resource
    Electronic Resource
    Secondary ion emission from binary Fe-Cr, Fe-Ni, Cr-Ni and ternary Fe-Cr-Ni alloys: Chemical and physical matrix effects (1987)
    Springer
    Applied physics 42 (1987), S. 239-243 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 07.80 ; 07.75
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Secondary ion emission from Fe-Cr, Fe-Ni, Cr-Ni binary alloys and Fe-Cr-Ni ternary alloys (concentration range 10–90% of the alloying element) bombarded with 3 keV Xe+ ions has been investigated as a function of concentration of the studied element in the multicomponent system. The linear increase of the secondary ion intensity with concentration of the element in the sample was found only for a low-concentration region. There are pronounced nonlinearities in the medium and high-concentration regions. A possible explanation for such nonlinearities based on chemical and physical matrix effects is proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620607
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  • 5
    Electronic Resource
    Electronic Resource
    Measurement ofK αcross sections and fluorescence yields for elements in the range 42≦Z≦57 using radioisotope X-ray fluorescence (1987)
    Springer
    Applied physics 43 (1987), S. 71-73 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract TheK α x-ray fluorescence (XRF) cross sections have been experimentally determined for elements in the range 42≦Z≦57 at excitation energy of 59.54keV associated with gamma rays of Am-241 radioisotope. In addition, measurements of XRF yields of theK shell (w k) for the same elements at the same excitation energy have also been carried out. Our measurements were shown to agree with theoretical calculations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615209
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  • 6
    Electronic Resource
    Electronic Resource
    Electron ionization rate in III–V ternary semiconductors (1987)
    Springer
    Applied physics 43 (1987), S. 105-109 
    Details
    ISSN: 1432-0630
    Keywords: 72.15 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Theoretical calculations are presented for the ionization rate of electrons in III–V ternary semiconductor compounds considering alloy scattering and carrier-carrier interaction, in addition to optical phonon scattering and ionization scattering. However, alloy scattering is found to be a weak interaction. Fairly good agreement is obtained for Ga1−x In x As withx=0.14 and 0.53 with the experimental results and for Ga0.5 Al0.5 As with the existing theoretical result which used an indirect method. The alloy scattering potential has been taken in the form of energy band-gap difference. The calculations can be used for any ternary semi-conductor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617961
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  • 7
    Electronic Resource
    Electronic Resource
    Experimental and computer study of the spatial distributions of particles sputtered from polycrystals (1989)
    Springer
    Applied physics 49 (1989), S. 299-304 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The spatial distributions of the sputtered particles were simultaneously and separately studied by experiment and computer simulation for 30 keV argon ion bombardment of copper in a wide range of primary-ion incidence angles (0°–86°). The distributions were found to be similar. The discrepancies between the data obtained and the predictions of the Roosendaal-Sanders analytical theory are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616858
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  • 8
    Electronic Resource
    Electronic Resource
    Contribution to time-resolved enhanced chemical etching and simultaneous annealing of ion implantation amorphized silicon under intense laser irradiation (1985)
    Springer
    Applied physics 38 (1985), S. 109-115 
    Details
    ISSN: 1432-0630
    Keywords: 82.50 ; 82.65 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Surfaces of single-crystal silicon wafers are amorphized by high-dose phosphorous ion implantation. These surfaces of the wafers, immersed in concentrated KOH, are laser-chemically etched by pulse irradiation of a ruby laser. Simultaneously, the remaining parts of the amorphous layer are annealed. The time dependence of the etching process enhanced during pulse irradiation is recorded and analysed. Reasons for the etching rates which differ between amorphous and single-crystal silicon are given on the basis of experimental and numerical results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620461
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  • 9
    Electronic Resource
    Electronic Resource
    Laser fluorescence measurements of the flux density of titanium sputtered from an oxygen covered surface (1985)
    Springer
    Applied physics 38 (1985), S. 131-138 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Laser-induced fluorescence spectroscopy is successfully used for the determination of the flux of ion-sputtered wall material. If the surface is clean, the majority of the particles are found in the groundstate multiplet of the neutral atoms. For an oxidized surface, however, excited and ionized states constitute a considerable fraction of the sputtered particle flux. This is investigated in detail in this paper by measuring population densities and velocity distributions of some selected atomic and ionic states of titanium. The respective flux densities and fractions of the total flux density are given, too. A criterion is found which may help to distinguish a clean from a heavily oxidized surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620464
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  • 10
    Electronic Resource
    Electronic Resource
    High-resolution electron microscopy of Si cones formed on Ar+-bombarded Si wafers (1988)
    Springer
    Applied physics 46 (1988), S. 313-321 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Conical Si projections generated on Si wafers bombarded with obliquely incident Ar+ ions were studied by high-resolution transmission electron microscopy. The cones were composed of an [111]-oriented bulk phase covered with a disordered thin layer, but the bulk phase was not perfectly ordered, containing an amorphous domain underneath the outermost area. Such a multi-phase structure is inexplicable in terms of ion erosion, suggesting interplay of the redeposition of sputtered Si atoms on the bombarded area with the ion-erosion process so as to promote cone evolution. The cones were also characterized by the development of web-like platelets at their acute angles, an indication of a crystal growth process involved in the surface phenomenon observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01141598
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  • 11
    Electronic Resource
    Electronic Resource
    Laser photochemical etching of silicon (1989)
    Springer
    Applied physics 49 (1989), S. 533-542 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 81.60 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Argon laser induced chemical etching of single crystal silicon with chlorine is studied. Etch rates are determined as a function of gas pressure, crystal orientation, laser power and wavelength. Analysis of gas phase and surface products by Fourier transform IR and X-ray photoelectron spectroscopy are used to probe the reaction mechanism. Contrary to previous reports, no thermally enhanced etch rate is observed for Si (111) and the presence of oxide on the surface is found to inhibit etching even at high laser power.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617021
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  • 12
    Electronic Resource
    Electronic Resource
    Cathode etching rate in abnormal glow discharges (1989)
    Springer
    Applied physics 48 (1989), S. 573-574 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 52
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The cathode etching rate in an abnormal glow discharge was calculated taking into account sputtering both by ions and energetic neutrals originating in cathode dark space due to the charge exchange collisions. The advantage of the model proposed is the evaluation of energetic neutral scattering by the sputtering gas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617859
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  • 13
    Electronic Resource
    Electronic Resource
    A simple formula for low-energy sputtering yields (1985)
    Springer
    Applied physics 36 (1985), S. 37-42 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A simple formula for low-energy sputtering yields of elemental targets is presented. The formula follows directly from Sigmund's theory but includes a modified form of the functionα(M t /M p ) and an accurate expression for the nuclear stopping cross section. Good agreement with experimental results is obtained for the projectiles Ne, Ar, Kr sputtering not too reactive surfaces at energies ≲1 keV. Further experiments are suggested as well as theoretical work concerning the meaning of the surface binding energy and the effect of the surface on the sputtering process in general.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616458
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  • 14
    Electronic Resource
    Electronic Resource
    Computer simulation of two-component target sputtering (1985)
    Springer
    Applied physics 37 (1985), S. 95-108 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The TRIM SP computer simulation program, which is based on the binary collision approximation, is applied to sputtering of two component targets. The topics discussed in this paper are: contribution of different processes leading to sputtering, total and partial sputtering yields, surface compositions at stationary conditions, sputtering of isotopic mixtures, angular and energy distributions and the escape depth of sputtered particles. Targets investigated are TaC, WC, TiC, TiD2, and B (as an isotope mixture), bombarded by the noble gas ions and D (in the case of TiD2). Comparison with experimental data and calculated results show good agreement demonstrating that collisional effects are sufficient to describe the experimental data in the examples investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618859
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  • 15
    Electronic Resource
    Electronic Resource
    Application of auger ewlectron depth profile analysis to thin film interdiffusion studies (1987)
    Springer
    Applied physics 42 (1987), S. 219-226 
    Details
    ISSN: 1432-0630
    Keywords: 66.30 ; 68.60 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Because of its good depth resolution, the Auger electron depth profile analysis allows to investigate diffusion phenomena in thin films directly. Complicated calibration procedures, however, are needed to correct for the matrix effects inherent in the Auger method, particularly artefacts due to the sputtering process. In this paper, two types of thin-film systems are presented in order to determine diffusion coefficients from depth profiles: double-layer and periodic multi-layer film structures. Compared to the double-layer films, the multi-layer structure has the advantage of less stringent requirements on depth resolution and allows to detect smaller diffusion effects. Finally, it is shown how grain boundary and bulk diffusion data can be extracted separately from the composition profiles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620604
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  • 16
    Electronic Resource
    Electronic Resource
    XRF induced by PIXE: Comparison with radioisotope XRF (1987)
    Springer
    Applied physics 42 (1987), S. 327-329 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract XRF induced by PIXE (XRF-PIXE) using silver as a primary target was compared with a standard radioisotope XRF system using Cd-109 as a primary exciting source, for the analysis of single-element thin standards. The sensitivity of the two methods were determined for elements from Cl to Mo. XRF is found to be more sensitive for elements from Cl to Mn, whereas XRF-PIXE is found to be more suitable for elements from Fe to Mo. Both techniques can be considered as complementary to each other.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616571
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  • 17
    Electronic Resource
    Electronic Resource
    A time-of-flight study on the nanosecond laser induced etching of Cu with Cl2 at 308 nm (1988)
    Springer
    Applied physics 47 (1988), S. 183-192 
    Details
    ISSN: 1432-0630
    Keywords: 66 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Chemical etching of Cu is studied using Cl2 and a ns pulsed UV laser at 308 nm. At Cl2 pressures in the range of 10−6–10−4mbar and a laser fluence up to 0.82 J/cm2 the velocity distributions of the ejected species are determined. CuCl and Cu3Cl3 are the main products. The time-of-flight spectra of these particles can be fitted with Maxwell-Boltzmann distributions at high temperatures viz. 1750〈T〈6000 K. Starting with a clean Cu sample the system evolves to a steady state situation in which a considerable amount of Cl has diffused into the bulk. The chlorinated Cu layer has a pronounced influence on the coupling of the laser beam into the substrate, thereby determining the amount of particles desorbed and their time-of-flight distributions. A model is presented to explain the results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618883
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  • 18
    Electronic Resource
    Electronic Resource
    Noise characteristics of a superlattice avalanche photodiode (1989)
    Springer
    Applied physics 48 (1989), S. 331-334 
    Details
    ISSN: 1432-0630
    Keywords: 72.70 ; 79.20 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The noise generated due to randomness of multiplication process in the avalanche region of an Al x Ga1−x As/GaAs quantum well p+-i-n+ structure has been studied. The paper presents a quantitative evaluation of the noise performance of the superlattice APD which has not been done so far. Further, useful design data for low noise structure is given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618894
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  • 19
    Electronic Resource
    Electronic Resource
    Ion energies at the cathode of the DC planar magnetron sputtering discharge (1989)
    Springer
    Applied physics 49 (1989), S. 269-272 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 52
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The energy distribution of the ions striking the cathode of the dc planar magnetron system was measured over a range of the typical sputtering conditions (magnetic field of 0.07–0.13 T, argon pressure of 0.01–10 Pa, discharge voltage of 250–600 V). The results obtained allow us to conclude that the major part of the incident ion flux originates in the cathode fall region. The theoretical model developed in terms of mobility theory makes it possible to evaluate the cathode fall voltage and its dependence on the sputtering conditions. It was found that the normalized integral form of the incident ions, energy spectrum is practically independent of the sputtering discharge parameters.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616853
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  • 20
    Electronic Resource
    Electronic Resource
    Reflection of low-energy hydrogen from solids (1985)
    Springer
    Applied physics 38 (1985), S. 123-129 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 52.40Hf
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The Monte Carlo Simulation Program TRIM is used to calculate particle and energy reflection coefficients as well as energy and angular distributions of reflected H, D, and T. To account for binding effects at the target surface a planar potential is applied. This binding potential reduces the reflection below an energy of a few eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620463
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  • 21
    Electronic Resource
    Electronic Resource
    MITATT mode in DDR heterostructure Impatt (1987)
    Springer
    Applied physics 42 (1987), S. 303-309 
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    ISSN: 1432-0630
    Keywords: 72.20 ; 79.20 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Large signal characterisation of double heterostructure DDR Impatt diode has been carried out in the millimeter-wave range considering the MITATT mode of operation. The structure of the device is p+-p2-p1-n1-n2-n+ where impact ionisation and tunneling takes place in the p1-n1 region. In this study we have considered two well-known heterostructures, e.g., InP/GaInAs/InP and InP/InGaAsP/InP and one nonconventional structure GaAs/InP/GaAs. The theoretical results of the performances of these devices as regards of output power, efficiency, and negative conductance revealed that the structures are quite promising as the source of power in the millimeter-wave range. The analysis may be used for other mm wave DDR heterostructure Impatts.
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    URL: http://dx.doi.org/10.1007/BF00616568
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  • 22
    Electronic Resource
    Electronic Resource
    Hot-electron drift velocity in III–V semiconductors under the condition of impact ionization (1987)
    Springer
    Applied physics 43 (1987), S. 53-60 
    Details
    ISSN: 1432-0630
    Keywords: 72.15 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A calculation has been carried out for the drift velocity of electrons in the highfield region under the condition of impact ionization in III–V semiconductor compounds. The energy-balance equation of the one-electron model has been solved considering alloy scattering and carrier-carrier interaction, in addition to optical phonon and ionization scattering. Fairly good agreement is obtained for GaAs with the available experimental and Monte-Carlo results. Graphs for the high-field drift velocity has also been plotted for Ga1−x InxAs (x = 0.53) at different ratios of ionization mean-free path and optical phonon mean-free path. The plot of high-field drift velocity versus ionization rate reveals that the high-field drift velocity strongly depends on the ionization rate of carriers, and vice versa.
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    URL: http://dx.doi.org/10.1007/BF00615206
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  • 23
    Electronic Resource
    Electronic Resource
    Neutralization of multiply charged ions at a surface (1987)
    Springer
    Applied physics 44 (1987), S. 31-41 
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    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We report on emission processes induced by particle-solid interaction involving ions with a large potential (i.e., high ion charge state) and low kinetic energy. After an introduction into existing neutralization models for ion scattering at a metal surface a detailed discussion on the electron emission processes is presented. The number of electrons emitted per incident ion is shown to be proportional to the potential energy only within a restricted parameter field involving charge state and ion velocity. The kinetic energy distribution of emitted electrons is dominated by low-energetic electrons (≦30 eV), while inner shell holes of the projectile ion can initiate high-energetic characteristic Auger electrons. The presence of inner shell holes is also of importance for the charge state of highly charged ions being scattered at surfaces whereas normally the charge state distribution of scattered ions depends on the impact parameter only. The influence of the primary ion charge state on the sputtering yield of insulating surfaces is seen for the charge state of sputtered particles, whereas the total sputtering yield seems to be insensitive. This question is still subject to controversy, however. Photon emission dependent on the charge state of the impinging ion has been observed up to now only for extremely highly charged ions as hydrogenlike Ar or Kr.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617889
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  • 24
    Electronic Resource
    Electronic Resource
    High-resolution electron microscopy of Si cones formed on Ar+-bombarded Si wafers (1988)
    Springer
    Applied physics 46 (1988), S. 313-321 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Conical Si projections generated on Si wafers bombarded with obliquely incident Ar+ ions were studied by high-resolution transmission electron microscopy. The cones were composed of an [111]-oriented bulk phase covered with a disordered thin layer, but the bulk phase was not perfectly ordered, containing an amorphous domain underneath the outermost area. Such a multi-phase structure is inexplicable in terms of ion erosion, suggesting interplay of the redeposition of sputtered Si atoms on the bombarded area with the ion-erosion process so as to promote cone evolution. The cones were also characterized by the development of web-like platelets at their acute angles, an indication of a crystal growth process involved in the surface phenomenon observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01210352
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