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  • Articles  (5)
  • 78.55  (5)
  • 1985-1989  (5)
  • 1950-1954
  • 1987  (5)
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (5)
  • Sociology
  • Technology
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  • Articles  (5)
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  • 1985-1989  (5)
  • 1950-1954
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (5)
  • Sociology
  • Technology
  • Physics  (5)
  • 1
    Electronic Resource
    Electronic Resource
    Photo production of surface recombination centers in gallium arsenide (1987)
    Springer
    Applied physics 42 (1987), S. 233-237 
    Details
    ISSN: 1432-0630
    Keywords: 78.55 ; 72.20 Iv
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The near band edge photoluminescence (−870 nm) at 300 K of semi-insulating and p-type GaAs, a potentially useful tool for GaAs wafer mapping, decreases with time under illumination from the 514 nm line of an Ar+ laser. The photoluminescence bleaching has been studied by optical and photo Hall-effect techniques. It recovers only partially on a time scale of days and does not show a distinct intensity threshold behavior. From lifetime measurements and experiments on samples covered with epitaxial layers of GaAs x P1−x or Si3N4 it is concluded that creation of surface recombination centers causes the PL bleaching.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620606
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  • 2
    Electronic Resource
    Electronic Resource
    Acceptor levels in indium selenide. An investigation by means of the Hall effect, deep-level-transient spectroscopy and photoluminescence (1987)
    Springer
    Applied physics 44 (1987), S. 249-260 
    Details
    ISSN: 1432-0630
    Keywords: 71.55 ; 78.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Acceptor levels related to I, II, IV, and V group impurities in indium selenide are studied by means of the Hall effect, deep-level-transient spectroscopy (DLTS) and photoluminescence. Activation energies for hole concentrations in the range from 200 to 300 meV have been measured. A reversible change of sign of the Hall voltage has been observed below 215 K. This behaviour can be explained through a model in which acceptor levels are assumed to be shallow and interlayer planar precipitates of ionized shallow donors create potential wells that behave as deep donors and in which a low concentration of bidimensional free electrons can exist. This model also explains the capacitance-voltage characteristics of both ITO/p-InSe and Au/p-InSe barriers. DLTS results are coherent with this model: hole traps in high concentration located about 570 meV above the valence band are detected. Photoluminescence also confirms the shallow character of acceptor levels. A broad band whose intensity is related to p conductivity appears in the PL spectra of low resistivity p-InSe. The shape and temperature dependence of this band can be explained through self-activated photoluminescence in a complex center in which the ground acceptor level must be at about 50 meV above the valence band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616698
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  • 3
    Electronic Resource
    Electronic Resource
    Theoretical characterisation of a superlattice avalanche photodiode (1987)
    Springer
    Applied physics 42 (1987), S. 173-177 
    Details
    ISSN: 1432-0630
    Keywords: 72.15 ; 72.40 ; 78.55 ; 79.20 ; 85.40 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A superlattice avalanche photodiode using III–V materials is expected to be used in long-distance fiberoptic communication systems in the 1.3 to 1.55 μm wavelength range. Theoretical studies have been made on the effective ionization rates of electrons and holes of the device, I–V characteristic and the frequency response characteristic of the Al x Ga1−x As/GaAs superlattice p+-i-n+ structure. It is observed that theα/β ratio of the device increases with the field and the bandwidth of the response curve increases with decrease in the dc multiplication gain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620596
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  • 4
    Electronic Resource
    Electronic Resource
    Carrier frequency-dependent intrinsic parameters in an ion-implanted silicon photo-MESFET (1987)
    Springer
    Applied physics 44 (1987), S. 361-364 
    Details
    ISSN: 1432-0630
    Keywords: 72.40 ; 78.55 ; 85.30 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Carrier frequency-dependent intrinsic parameters of an ion-implanted silicon photo-MESFET have been analysed theoretically. The internal gate source capacitanceC gs is found to increase with increasing carrier frequency under the normally OFF condition and the change is small under the normally ON condition. Also, the internal drain-source resistanceR ds increases with frequency at a fixed flux density and wavelength of operation. The ion-implanted photo-MESFET could become useful as optically controlled switching device in digital circuits.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00624604
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  • 5
    Electronic Resource
    Electronic Resource
    Photoluminescence of transition metal complexes in silicon (1987)
    Springer
    Applied physics 42 (1987), S. 1-18 
    Details
    ISSN: 1432-0630
    Keywords: 71.55 ; 78.55 ; 71.35
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Results of luminescence studies on silicon doped with the 3d transition metals are reviewed. Spectra are observed after V, Cr, Mn, Fe, and Cu diffusion. We discuss the problems of center identifications, using the example of the CrB-pair luminescence. Level schemes for the optical transitions are discussed and correlated with electrical level positions of TM defects. Luminescent centers can be divided into two classes: CrB,CrGa, and Mn4 are effective recombination centers with low quantum efficiencies, whereas Fe and Cu associated spectra show characteristics of exciton decay at isoelectronic centers, e.g. show a high quantum efficiency. The phonon structure of the spectra is discussed, and it is shown that the local mode energies of the centers follow a systematic trend.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618154
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