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  • Articles  (6)
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  • 72.40  (6)
  • Springer  (6)
  • Blackwell Publishing Ltd
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  • Elsevier
  • Macmillian Magazines Ltd.
  • Molecular Diversity Preservation International
  • Nature Publishing Group (NPG)
  • 2020-2022
  • 1990-1994
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  • 1945-1949
  • 1987  (6)
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (6)
  • Natural Sciences in General
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  • Articles  (6)
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  • Springer  (6)
  • Blackwell Publishing Ltd
  • ELSEVIER
  • Elsevier
  • Macmillian Magazines Ltd.
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  • 2020-2022
  • 1990-1994
  • 1985-1989  (6)
  • 1945-1949
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (6)
  • Natural Sciences in General
  • Physics  (6)
  • 1
    Electronic Resource
    Electronic Resource
    Transient negative photoconductivity in silicon doped with gold (1987)
    Springer
    Applied physics 43 (1987), S. 205-208 
    Details
    ISSN: 1432-0630
    Keywords: 72.40 ; 72.20 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A transient negative photoconductivity phenomenon observed in silicon doped with gold atoms by an appropriate diffusion condition has been investigated. The transient negative photoconductivity could be observed with a diode doped with gold atoms under intrinsic light-pulse illumination. In the recovery process of the transient negative photoconductivity to a steady-state dark level, two kind of time constants were observed, which may be related with the emission of electrons from gold level. A dependence of the magnitude of the peak value on the ambient temperature was observed; a qualitative explanation is given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615977
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  • 2
    Electronic Resource
    Electronic Resource
    Theoretical characterisation of a superlattice avalanche photodiode (1987)
    Springer
    Applied physics 42 (1987), S. 173-177 
    Details
    ISSN: 1432-0630
    Keywords: 72.15 ; 72.40 ; 78.55 ; 79.20 ; 85.40 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A superlattice avalanche photodiode using III–V materials is expected to be used in long-distance fiberoptic communication systems in the 1.3 to 1.55 μm wavelength range. Theoretical studies have been made on the effective ionization rates of electrons and holes of the device, I–V characteristic and the frequency response characteristic of the Al x Ga1−x As/GaAs superlattice p+-i-n+ structure. It is observed that theα/β ratio of the device increases with the field and the bandwidth of the response curve increases with decrease in the dc multiplication gain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620596
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of optical radiation in a photo-DOVATT (1987)
    Springer
    Applied physics 42 (1987), S. 311-315 
    Details
    ISSN: 1432-0630
    Keywords: 70.20 ; 72.40 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Avalanche photodetectors are very important solid-state detectors currently used in long-distance and wide-band optical communication systems, due to their faster speed of response compared to other solid-state photodiodes. Furthermore, it has been found that by using heterostructures one can improve both multiplication gain and quantum efficiency of such a device. DOVATT is a heterojunction impatt device in which there is one avalanche zone followed by two drift zones at different scattering limited velocities. The device is very useful for generation of high power in the X-band. The present paper examines the effect of optical radiation on such a device. Studies have been made on the frequency-response characteristics of the device. The results show that the device has the potentiality of becoming a powerful photodetector in optical communication systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616569
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  • 4
    Electronic Resource
    Electronic Resource
    Determination of the photoionization threshold of the deep donor in Al0.33Ga0.67As:Si (1987)
    Springer
    Applied physics 44 (1987), S. 245-247 
    Details
    ISSN: 1432-0630
    Keywords: 61.70T ; 71.55F ; 72.40 ; 78.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Photoionization of the DX center in Si-doped A10.33Ga0.67As has been studied by means of photoconductivity. The optical cross-sectionσ nd 0 shows a threshold atħω=200 meV and relative maxima (shoulders) around 400, 600, 950, and 1700 meV. The results throw doubt on the validity of the large lattice relaxation model, generally accepted for this class of centers. They can be well accounted for by the small relaxation model, recently proposed by the authors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616697
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  • 5
    Electronic Resource
    Electronic Resource
    Carrier frequency-dependent intrinsic parameters in an ion-implanted silicon photo-MESFET (1987)
    Springer
    Applied physics 44 (1987), S. 361-364 
    Details
    ISSN: 1432-0630
    Keywords: 72.40 ; 78.55 ; 85.30 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Carrier frequency-dependent intrinsic parameters of an ion-implanted silicon photo-MESFET have been analysed theoretically. The internal gate source capacitanceC gs is found to increase with increasing carrier frequency under the normally OFF condition and the change is small under the normally ON condition. Also, the internal drain-source resistanceR ds increases with frequency at a fixed flux density and wavelength of operation. The ion-implanted photo-MESFET could become useful as optically controlled switching device in digital circuits.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00624604
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of visible light intensity on the dielectric behaviour of mercuric iodide (1987)
    Springer
    Applied physics 43 (1987), S. 123-130 
    Details
    ISSN: 1432-0630
    Keywords: 77.40 ; 72.40 ; 77.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electrical and dielectric properties of mercuric iodide were studied at room temperature under various intensities and colours of light in the frequency range 1 Hz–10 kHz. In the high-frequency region (〉40 Hz), the real part of the dielectric constant (ɛ′) is almost constant with frequency (f), colour and intensity of light. At lower frequencies,ɛ′ varies nearly as 1/f and monotonically increases with intensity (I) of the yellow (or green) light, whereas it is almost constant with red light intensity. This behaviour is discussed in the view of the different polarization contributions. The imaginary part of the dielectric constant (ɛ″) was found to vary as 1/f over the frequency range studied. This behaviour was observed whether the crystal was in dark or illuminated implying that the roomtemperature ac dark- or photo-conductivity (σ) is independent of frequency. The observed variation ofσ with intensity of yellow (or green) light was found to follow anI 1/2 dependence and a weaker dependence for the red light. the red light. The conductivity behaviour is discussed in the view of the current theories.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617964
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