ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Articles  (10)
  • Data
  • 72.40  (6)
  • 81.10  (4)
  • Springer  (10)
  • Blackwell Publishing Ltd
  • ELSEVIER
  • Elsevier
  • Macmillian Magazines Ltd.
  • Molecular Diversity Preservation International
  • Nature Publishing Group (NPG)
  • 2020-2022
  • 1990-1994
  • 1985-1989  (10)
  • 1945-1949
  • 1987  (10)
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (10)
  • Natural Sciences in General
Collection
  • Articles  (10)
  • Data
Source
Keywords
Publisher
  • Springer  (10)
  • Blackwell Publishing Ltd
  • ELSEVIER
  • Elsevier
  • Macmillian Magazines Ltd.
    • +
Years
  • 2020-2022
  • 1990-1994
  • 1985-1989  (10)
  • 1945-1949
Year
Topic
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (10)
  • Natural Sciences in General
  • Physics  (11)
  • 1
    Electronic Resource
    Electronic Resource
    Transient negative photoconductivity in silicon doped with gold (1987)
    Springer
    Applied physics 43 (1987), S. 205-208 
    Details
    ISSN: 1432-0630
    Keywords: 72.40 ; 72.20 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A transient negative photoconductivity phenomenon observed in silicon doped with gold atoms by an appropriate diffusion condition has been investigated. The transient negative photoconductivity could be observed with a diode doped with gold atoms under intrinsic light-pulse illumination. In the recovery process of the transient negative photoconductivity to a steady-state dark level, two kind of time constants were observed, which may be related with the emission of electrons from gold level. A dependence of the magnitude of the peak value on the ambient temperature was observed; a qualitative explanation is given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615977
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Theoretical characterisation of a superlattice avalanche photodiode (1987)
    Springer
    Applied physics 42 (1987), S. 173-177 
    Details
    ISSN: 1432-0630
    Keywords: 72.15 ; 72.40 ; 78.55 ; 79.20 ; 85.40 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A superlattice avalanche photodiode using III–V materials is expected to be used in long-distance fiberoptic communication systems in the 1.3 to 1.55 μm wavelength range. Theoretical studies have been made on the effective ionization rates of electrons and holes of the device, I–V characteristic and the frequency response characteristic of the Al x Ga1−x As/GaAs superlattice p+-i-n+ structure. It is observed that theα/β ratio of the device increases with the field and the bandwidth of the response curve increases with decrease in the dc multiplication gain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620596
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Effect of optical radiation in a photo-DOVATT (1987)
    Springer
    Applied physics 42 (1987), S. 311-315 
    Details
    ISSN: 1432-0630
    Keywords: 70.20 ; 72.40 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Avalanche photodetectors are very important solid-state detectors currently used in long-distance and wide-band optical communication systems, due to their faster speed of response compared to other solid-state photodiodes. Furthermore, it has been found that by using heterostructures one can improve both multiplication gain and quantum efficiency of such a device. DOVATT is a heterojunction impatt device in which there is one avalanche zone followed by two drift zones at different scattering limited velocities. The device is very useful for generation of high power in the X-band. The present paper examines the effect of optical radiation on such a device. Studies have been made on the frequency-response characteristics of the device. The results show that the device has the potentiality of becoming a powerful photodetector in optical communication systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616569
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Determination of the photoionization threshold of the deep donor in Al0.33Ga0.67As:Si (1987)
    Springer
    Applied physics 44 (1987), S. 245-247 
    Details
    ISSN: 1432-0630
    Keywords: 61.70T ; 71.55F ; 72.40 ; 78.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Photoionization of the DX center in Si-doped A10.33Ga0.67As has been studied by means of photoconductivity. The optical cross-sectionσ nd 0 shows a threshold atħω=200 meV and relative maxima (shoulders) around 400, 600, 950, and 1700 meV. The results throw doubt on the validity of the large lattice relaxation model, generally accepted for this class of centers. They can be well accounted for by the small relaxation model, recently proposed by the authors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616697
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Kinetics of Ni2Si growth from pure Ni and Ni(V) films on (111) and (100) Si (1987)
    Springer
    Applied physics 42 (1987), S. 35-39 
    Details
    ISSN: 1432-0630
    Keywords: 61.10 ; 68.55 ; 81.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The kinetics of Ni2Si growth from pure Ni and from Ni0.93V0.07 films on (111) and (100) silicon has been studied by the combination of He+ backscattering, x-ray diffraction, Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) techniques. The activation energies are 1.5 and 1.0 eV for pure Ni and Ni(V) films, respectively while the pre-exponential factors in Ni(V) are 4–5 orders of magnitude smaller than in the pure Ni case. The variations in the measured rates are related to the different grain size of the growing suicide layers. The vanadium is rejected from the silicide layer and piles up at the metalsilicide interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618156
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    The influence of graphite boat material on the purity of LPE InGaAs (1987)
    Springer
    Applied physics 43 (1987), S. 37-40 
    Details
    ISSN: 1432-0630
    Keywords: 81.10 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract This paper describes the purity of LPE InGaAs layers grown in graphite boats, machined from various graphite materials. The influence of the material is clearly visible if the growth solution is sufficiently pure. Carrier concentrations n〈2×l015 cm−3 and mobilitiesμ(77 K)〉 38000 cm2/Vs are routinely achieved for suitable graphite materials already from the third run of a new “large” boat applying a prebake of only 15 h. “Small” boats yield even better results (n=0.5×1015 cm−3 andμ(77 K)=49500 m2/Vs). The sticking of In-rich solutions to the graphite does not depend on the material but is solely dependent on the surface roughness. The problem of graphite particle abrasion is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615203
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Application of molecular (static) secondary ion mass spectroscopy to detection of organic molecules in amorphous titanium carbide (1987)
    Springer
    Applied physics 42 (1987), S. 139-143 
    Details
    ISSN: 1432-0630
    Keywords: 82.80 ; 82.65 ; 81.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Molecular, or static, secondary ion mass Spectroscopy (SIMS) is applied to the detection of organic molecules in amorphous titanium carbide films. The presence of such organic clusters is thought to stabilize the amorphous phase to higher temperatures (〉1000°C) and greater thicknesses. The high corrosion resistance properties of the TiC deposits are also attributed to the inclusion of such molecular entities. The processes whereby these molecular entities in the films are transformed into secondary ions during SIMS analysis are also investigated. It is shown that the dominant ionization mechanisms in this case are electron and momentum transfer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616724
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Carrier frequency-dependent intrinsic parameters in an ion-implanted silicon photo-MESFET (1987)
    Springer
    Applied physics 44 (1987), S. 361-364 
    Details
    ISSN: 1432-0630
    Keywords: 72.40 ; 78.55 ; 85.30 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Carrier frequency-dependent intrinsic parameters of an ion-implanted silicon photo-MESFET have been analysed theoretically. The internal gate source capacitanceC gs is found to increase with increasing carrier frequency under the normally OFF condition and the change is small under the normally ON condition. Also, the internal drain-source resistanceR ds increases with frequency at a fixed flux density and wavelength of operation. The ion-implanted photo-MESFET could become useful as optically controlled switching device in digital circuits.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00624604
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Growth rates and electrical conductivity of microscopic ohmic contacts fabricated by laser chemical vapor deposition of platinum (1987)
    Springer
    Applied physics 44 (1987), S. 353-359 
    Details
    ISSN: 1432-0630
    Keywords: 81.10 ; 85.40 ; 42.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The laser chemical vapor deposition of platinum from its bishexafluoroacetylacetonate derivative is studied with a cw argon ion laser at 458 and 514 nm. The height, the width, as well as the electrical conductivity of the deposited stripes are reported as a function of the vapor pressure of the metalorganic precurser, the laser intensity, and the writing speed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00624603
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Effect of visible light intensity on the dielectric behaviour of mercuric iodide (1987)
    Springer
    Applied physics 43 (1987), S. 123-130 
    Details
    ISSN: 1432-0630
    Keywords: 77.40 ; 72.40 ; 77.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electrical and dielectric properties of mercuric iodide were studied at room temperature under various intensities and colours of light in the frequency range 1 Hz–10 kHz. In the high-frequency region (〉40 Hz), the real part of the dielectric constant (ɛ′) is almost constant with frequency (f), colour and intensity of light. At lower frequencies,ɛ′ varies nearly as 1/f and monotonically increases with intensity (I) of the yellow (or green) light, whereas it is almost constant with red light intensity. This behaviour is discussed in the view of the different polarization contributions. The imaginary part of the dielectric constant (ɛ″) was found to vary as 1/f over the frequency range studied. This behaviour was observed whether the crystal was in dark or illuminated implying that the roomtemperature ac dark- or photo-conductivity (σ) is independent of frequency. The observed variation ofσ with intensity of yellow (or green) light was found to follow anI 1/2 dependence and a weaker dependence for the red light. the red light. The conductivity behaviour is discussed in the view of the current theories.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617964
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...