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  • Articles  (10)
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  • 72.40  (6)
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  • Elsevier
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (10)
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  • Articles  (10)
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  • Springer  (10)
  • Blackwell Publishing Ltd
  • ELSEVIER
  • Elsevier
  • Macmillian Magazines Ltd.
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  • 2020-2022
  • 1990-1994
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (10)
  • Natural Sciences in General
  • Physics  (10)
  • 1
    Electronic Resource
    Electronic Resource
    Acceptor levels in indium selenide. An investigation by means of the Hall effect, deep-level-transient spectroscopy and photoluminescence (1987)
    Springer
    Applied physics 44 (1987), S. 249-260 
    Details
    ISSN: 1432-0630
    Keywords: 71.55 ; 78.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Acceptor levels related to I, II, IV, and V group impurities in indium selenide are studied by means of the Hall effect, deep-level-transient spectroscopy (DLTS) and photoluminescence. Activation energies for hole concentrations in the range from 200 to 300 meV have been measured. A reversible change of sign of the Hall voltage has been observed below 215 K. This behaviour can be explained through a model in which acceptor levels are assumed to be shallow and interlayer planar precipitates of ionized shallow donors create potential wells that behave as deep donors and in which a low concentration of bidimensional free electrons can exist. This model also explains the capacitance-voltage characteristics of both ITO/p-InSe and Au/p-InSe barriers. DLTS results are coherent with this model: hole traps in high concentration located about 570 meV above the valence band are detected. Photoluminescence also confirms the shallow character of acceptor levels. A broad band whose intensity is related to p conductivity appears in the PL spectra of low resistivity p-InSe. The shape and temperature dependence of this band can be explained through self-activated photoluminescence in a complex center in which the ground acceptor level must be at about 50 meV above the valence band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616698
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  • 2
    Electronic Resource
    Electronic Resource
    Transient negative photoconductivity in silicon doped with gold (1987)
    Springer
    Applied physics 43 (1987), S. 205-208 
    Details
    ISSN: 1432-0630
    Keywords: 72.40 ; 72.20 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A transient negative photoconductivity phenomenon observed in silicon doped with gold atoms by an appropriate diffusion condition has been investigated. The transient negative photoconductivity could be observed with a diode doped with gold atoms under intrinsic light-pulse illumination. In the recovery process of the transient negative photoconductivity to a steady-state dark level, two kind of time constants were observed, which may be related with the emission of electrons from gold level. A dependence of the magnitude of the peak value on the ambient temperature was observed; a qualitative explanation is given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615977
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  • 3
    Electronic Resource
    Electronic Resource
    Theoretical characterisation of a superlattice avalanche photodiode (1987)
    Springer
    Applied physics 42 (1987), S. 173-177 
    Details
    ISSN: 1432-0630
    Keywords: 72.15 ; 72.40 ; 78.55 ; 79.20 ; 85.40 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A superlattice avalanche photodiode using III–V materials is expected to be used in long-distance fiberoptic communication systems in the 1.3 to 1.55 μm wavelength range. Theoretical studies have been made on the effective ionization rates of electrons and holes of the device, I–V characteristic and the frequency response characteristic of the Al x Ga1−x As/GaAs superlattice p+-i-n+ structure. It is observed that theα/β ratio of the device increases with the field and the bandwidth of the response curve increases with decrease in the dc multiplication gain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620596
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of optical radiation in a photo-DOVATT (1987)
    Springer
    Applied physics 42 (1987), S. 311-315 
    Details
    ISSN: 1432-0630
    Keywords: 70.20 ; 72.40 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Avalanche photodetectors are very important solid-state detectors currently used in long-distance and wide-band optical communication systems, due to their faster speed of response compared to other solid-state photodiodes. Furthermore, it has been found that by using heterostructures one can improve both multiplication gain and quantum efficiency of such a device. DOVATT is a heterojunction impatt device in which there is one avalanche zone followed by two drift zones at different scattering limited velocities. The device is very useful for generation of high power in the X-band. The present paper examines the effect of optical radiation on such a device. Studies have been made on the frequency-response characteristics of the device. The results show that the device has the potentiality of becoming a powerful photodetector in optical communication systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616569
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  • 5
    Electronic Resource
    Electronic Resource
    Determination of the photoionization threshold of the deep donor in Al0.33Ga0.67As:Si (1987)
    Springer
    Applied physics 44 (1987), S. 245-247 
    Details
    ISSN: 1432-0630
    Keywords: 61.70T ; 71.55F ; 72.40 ; 78.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Photoionization of the DX center in Si-doped A10.33Ga0.67As has been studied by means of photoconductivity. The optical cross-sectionσ nd 0 shows a threshold atħω=200 meV and relative maxima (shoulders) around 400, 600, 950, and 1700 meV. The results throw doubt on the validity of the large lattice relaxation model, generally accepted for this class of centers. They can be well accounted for by the small relaxation model, recently proposed by the authors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616697
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  • 6
    Electronic Resource
    Electronic Resource
    Non-exponential dark capacitance transients from red-emitting GaP LED's — Field and edge effects on the 0.75 eV centre (1987)
    Springer
    Applied physics 42 (1987), S. 301-302 
    Details
    ISSN: 1432-0630
    Keywords: 71.55 ; 85.60 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616567
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  • 7
    Electronic Resource
    Electronic Resource
    Carrier frequency-dependent intrinsic parameters in an ion-implanted silicon photo-MESFET (1987)
    Springer
    Applied physics 44 (1987), S. 361-364 
    Details
    ISSN: 1432-0630
    Keywords: 72.40 ; 78.55 ; 85.30 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Carrier frequency-dependent intrinsic parameters of an ion-implanted silicon photo-MESFET have been analysed theoretically. The internal gate source capacitanceC gs is found to increase with increasing carrier frequency under the normally OFF condition and the change is small under the normally ON condition. Also, the internal drain-source resistanceR ds increases with frequency at a fixed flux density and wavelength of operation. The ion-implanted photo-MESFET could become useful as optically controlled switching device in digital circuits.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00624604
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  • 8
    Electronic Resource
    Electronic Resource
    Photoluminescence of transition metal complexes in silicon (1987)
    Springer
    Applied physics 42 (1987), S. 1-18 
    Details
    ISSN: 1432-0630
    Keywords: 71.55 ; 78.55 ; 71.35
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Results of luminescence studies on silicon doped with the 3d transition metals are reviewed. Spectra are observed after V, Cr, Mn, Fe, and Cu diffusion. We discuss the problems of center identifications, using the example of the CrB-pair luminescence. Level schemes for the optical transitions are discussed and correlated with electrical level positions of TM defects. Luminescent centers can be divided into two classes: CrB,CrGa, and Mn4 are effective recombination centers with low quantum efficiencies, whereas Fe and Cu associated spectra show characteristics of exciton decay at isoelectronic centers, e.g. show a high quantum efficiency. The phonon structure of the spectra is discussed, and it is shown that the local mode energies of the centers follow a systematic trend.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618154
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  • 9
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing of electrically-active defects in virgin and implanted silicon (1987)
    Springer
    Applied physics 42 (1987), S. 227-232 
    Details
    ISSN: 1432-0630
    Keywords: 81.40E ; 61.80B ; 61.70T ; 71.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have investigated the annealing behaviour of electrically-active defects induced in virgin n-type and residual in As+ implanted p-type silicon after laser irradiation, using the rapid thermal annealing technique (RTA). Spectra from deep level transient spectroscopy (DLTS) show that three majority carrier traps at E (0.32 eV), E (0.45 eV) and E (0.53 eV) were induced in the n-type Si after Nd-Yag laser treatment at 1.6 J cm−2. Annealing in a rapid thermal furnace at 600 °C for times between 5 and 60 s resulted in a linear decrease of the concentration of these defects and for times ≧ 60 s, they are no longer detectable. A similar result was obtained in the case of the multiple energy As+ implanted samples in which two majority carrier traps at H (0.30 eV), H (0.58 eV) and a minority carrier trap E (0.53 eV) completely disappeared after annealing for 45 s at 600 °C, in spite of the very high concentration of the H (0.58 eV) defect (〉1015 cm−3 up to a depth of about 1.5 μm). A comparison of the annealing rates of the E (0.32 eV) trap using the RTA and the conventional thermal annealing (CTA) techniques at 600 °C showed that the former is at least 30 times faster than the latter. Sheet resistance measurements show that the level of dopant deactivation, due to post-laser thermal treatment at 500 °C (in order to obtain the same reduction in residual defect concentration), is less in the RTA processed samples than in those annealed using conventional methods. These results lend strong support to the hypothesis of ionization-induced enhancement of defect annealing, and to our knowledge, represent the first report of the observation of the phenomenon using the RTA technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620605
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  • 10
    Electronic Resource
    Electronic Resource
    Effect of visible light intensity on the dielectric behaviour of mercuric iodide (1987)
    Springer
    Applied physics 43 (1987), S. 123-130 
    Details
    ISSN: 1432-0630
    Keywords: 77.40 ; 72.40 ; 77.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electrical and dielectric properties of mercuric iodide were studied at room temperature under various intensities and colours of light in the frequency range 1 Hz–10 kHz. In the high-frequency region (〉40 Hz), the real part of the dielectric constant (ɛ′) is almost constant with frequency (f), colour and intensity of light. At lower frequencies,ɛ′ varies nearly as 1/f and monotonically increases with intensity (I) of the yellow (or green) light, whereas it is almost constant with red light intensity. This behaviour is discussed in the view of the different polarization contributions. The imaginary part of the dielectric constant (ɛ″) was found to vary as 1/f over the frequency range studied. This behaviour was observed whether the crystal was in dark or illuminated implying that the roomtemperature ac dark- or photo-conductivity (σ) is independent of frequency. The observed variation ofσ with intensity of yellow (or green) light was found to follow anI 1/2 dependence and a weaker dependence for the red light. the red light. The conductivity behaviour is discussed in the view of the current theories.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617964
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