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  • Articles  (7)
  • 79.20  (7)
  • 2005-2009
  • 1980-1984  (7)
  • 1965-1969
  • 1925-1929
  • 1984  (7)
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (7)
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  • Articles  (7)
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Keywords
Publisher
Years
  • 2005-2009
  • 1980-1984  (7)
  • 1965-1969
  • 1925-1929
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Topic
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (7)
  • Physics  (7)
  • 1
    Electronic Resource
    Electronic Resource
    Laser-induced free-carrier absorption in Si single crystal (1984)
    Springer
    Applied physics 33 (1984), S. 107-111 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 79.20 ; 81
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The transmitted energy density in thin single Si crystal, wafers is measured atλ=1.06 μm as a function of the incident energy density for a Nd laser pulse of 30 ns duration. Non-linear effects begin to become important at about 0.3 J/cm2. The contribution due to free-carriers is separated from the interband one by using measurements made at low energy density and at different sample temperatures in the 20°–150 °C range. The time dependence of the free-carrier concentration and of the lattice temperature is computed for different values of the Auger constant. The experimental data in the 0.2–2.5 J/cm2 energy density range are fitted with an Auger constant of 10−30 cm6s−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617616
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  • 2
    Electronic Resource
    Electronic Resource
    Surface channeling of swift light ions (1984)
    Springer
    Applied physics 33 (1984), S. 121-131 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 78.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A fast computer code is developed to provide information about the trajectories of swift light particles incident on crystalline targets under surface channeling conditions. The approximations used in the model are tested by comparison of trajectory calculations with the MARLOWE simulation program. The simulation of experimental energy distributions allows discussing various inelastic energy loss models for the interaction of 150 keV protons with a nickel surface. The results suggest that plasmon excitations are not sufficient to account for the measured energy losses. It is found that the Oen-Robinson formula, including inelastic energy losses by single electron excitations in dense materials reasonably well applies to the reflection of light ions from metallic surfaces in channeling conditions. The measured light intensity emitted from 200 keV He+ reflected ions in various directions close to compact atomic surface rows is compared with the calculated reflection coefficient. The results suggest that most of the particles reflected in ionic state do not penetrate the target surface. Detailed comparison between light emission measurements and calculated reflection intensities, however, requires accurate modelling of the surface topography as well as of the deexcitation mechanisms involved in the surface reflection of light ions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617618
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  • 3
    Electronic Resource
    Electronic Resource
    Au gettering by Ne and Ar implantation in silicon (1984)
    Springer
    Applied physics 35 (1984), S. 119-124 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 66 ; 85.30 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The gettering efficiency for Au induced by Ne+ and Ar+ implantation has been studied. The depth distribution of gettered Au as a function of annealing temperature and dose of implanted Ne+ and Ar+ ions are presented. The experiment shows that the maximum efficiency of gettering occurs when the implantation doses are comparable with amorphization dose.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620641
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  • 4
    Electronic Resource
    Electronic Resource
    Core electron excitation spectra of diamond, graphite, and glassy carbon (1984)
    Springer
    Applied physics 34 (1984), S. 35-39 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 71.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Low-energy electron energy loss spectra in theC(1s) core electron excitation region have been measured in diamond, graphite and glassy carbon in the non-differentiated form. The background subtractedN(E) spectrum has been proved to reflect the density-of-states (DOS) of the conduction band well, and the conduction band structures of these materials have been elucidated. The energy positions of the symmetry points in their conduction bands have been determined from the second-derivative spectra, which were obtained by numerical differentiation of the measuredN(E) spectra.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617572
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  • 5
    Electronic Resource
    Electronic Resource
    Trapping and reflection coefficients for deuterium in graphite at oblique incidence (1984)
    Springer
    Applied physics 33 (1984), S. 265-268 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Trapping and particle reflection coefficients for 0.4–10keVD on graphite have been measured for angles of incidence 0≦α≦85° by determining the areal density of implanted D as a function of the implanted fluence. The experimental data are compared to computer calculations with the TRIM-program. The agreement between measurement and calculation is good.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614669
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  • 6
    Electronic Resource
    Electronic Resource
    The velocity distribution of sputtered Zr atoms for irradiation at normal and oblique angle of incidence (1984)
    Springer
    Applied physics 33 (1984), S. 235-241 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 32.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Laser-induced fluorescence by means of a cw dye laser has been used for investigating the velocity distribution of sputtered Zr atoms in the ground state. In order to evaluate the data the excitation probability of the atoms in the observation volume has been measured. The velocity distribution of Zr atoms for irradiation with Ar+-ions as well as light ions at normal and oblique angle (70°) of incidence is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614664
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  • 7
    Electronic Resource
    Electronic Resource
    A semiempirical formula describing the recoil yield in silicon (1984)
    Springer
    Applied physics 35 (1984), S. 161-167 
    Details
    ISSN: 1432-0630
    Keywords: 34 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Krypton ions in the energy range 20–300 keV are used to generate recoiling atoms in silicon from thin layers evaporated on its surface. The recoil yields and the impurity distributions in the substrate have been measured as a function of several parameters (energy, thickness of the layer, incident dose). The results are used to propose a new formulation of the recoil yield based on the possibility, for both projectiles and recoiling atoms, to remove impurities previously introduced in silicon. The calculation fits very well the experimental results using displacement energies close to the generally admitted values
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616970
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