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  • 61.70
  • 68.55
  • Springer  (14)
  • American Chemical Society (ACS)
  • American Geophysical Union
  • National Academy of Sciences
  • Nature Publishing Group
  • 2015-2019
  • 2005-2009
  • 1980-1984  (14)
  • 2017
  • 2008
  • 1984  (14)
Sammlung
Schlagwörter
Verlag/Herausgeber
  • Springer  (14)
  • American Chemical Society (ACS)
  • American Geophysical Union
  • National Academy of Sciences
  • Nature Publishing Group
Erscheinungszeitraum
  • 2015-2019
  • 2005-2009
  • 1980-1984  (14)
Jahr
  • 1
    Digitale Medien
    Digitale Medien
    Thermoluminescence of YAG:Nd crystals coloured with x-rays (1984)
    Springer
    Applied physics 34 (1984), S. 87-92 
    Details
    ISSN: 1432-0649
    Schlagwort(e): 61.70 ; 61.80 ; 71.35 ; 78.55
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract The spectral distribution of the thermoluminescence (TL) of YAG:Nd crystals coloured by x-ray irradiation at room temperature (RT) and at 80 K has been investigated. The spectral distribution of TL in the uv-, visible and near ir ranges shows that the energy transfer by bound exciton states (BES) to the RE3+ ions (Nd3+ and Tb3+) decreases with increasing temperature. The TL spectrum in the uv range is ascribed to the hole defect centers. Diminution of the energy transferred by the BES to the Nd3+ and Tb3+ ions is the direct cause for the occurrence of the group of lines ascribed to the Nd3+ ions in TL observed at LT, whereas at RT and higher only the groups of Tb lines are observed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00697953
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  • 2
    Digitale Medien
    Digitale Medien
    Diffusion of gold in silicon studied by means of neutron-activation analysis and spreading-resistance measurements (1984)
    Springer
    Applied physics 33 (1984), S. 133-140 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 61.70 ; 66.30 ; 85.3085.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract In- and out-diffusion of gold in silicon were investigated with the aid of a neutronactivation analysis in combination with mechanical sectioning or by the spreadingresistance technique. In-diffusion profiles in the range 1371–1073 K show that Au diffuses in Si mainly via the so-called kick-out mechanism. From the Au diffusion and solubility measurements the interstitialcy contributionD I SD to the Si self-diffusion coefficient was determined, which shows that the self-diffusion occurs to a considerable extent via selfinterstitials. Out-diffusion profiles at 1173 K were measured on wafers homogeneously supersaturated with Au. The observed decrease of the electrical activity of Au in the bulk indicates that during the out-diffusion anneal the majority of Au atoms originally dissolved substitutionally changes its configuration.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00617619
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  • 3
    Digitale Medien
    Digitale Medien
    Formation of a metallic layer from individual atoms (1984)
    Springer
    Applied physics 33 (1984), S. 213-225 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 68.55 ; 73.60
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Adsorption of copper, gold and beryllium on (110), (100), and (211) single-crystal planes of tungsten leads to essentially different work-function changes. It is known from numerous investigations of alkali-metal adsorption on metal substrates that the work-function variation reflects the electronic processes occurring during the formation of the adlayer. It is obvious that copper, gold and beryllium adsorption is accompanied by a wide variety of physical processes different from those appearing in alkali-metal adsorption. The existing experimental data concerning work-function changes induced by copper, gold and beryllium adsorption are compiled. A model is developed, which may explain these changes.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00614661
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  • 4
    Digitale Medien
    Digitale Medien
    TEM image contrast from antiphase domains in GaAs: Ge(001) grown by MBE (1984)
    Springer
    Applied physics 34 (1984), S. 231-236 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 68.55 ; 61.70
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Antiphase domains occur in thin GaAs epitaxial films grown on Ge(001) by molecular beam epitaxy. The domains have been imaged by transmission electron microscopy using 200-type reflections in dark field. The carefully chosen imaging conditions with convergent illumination ensure that doubly diffracted beams from a pair of first order Laue zone discs contribute to the singly diffracted 200-type beams. The three Bragg reflections may add in or out of phase to give domains in either light or dark contrast depending on their polarity.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00616577
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  • 5
    Digitale Medien
    Digitale Medien
    Characterisation of the interface between GaAs: Cr substrates andn-type epitaxial GaAs layers by infrared multiple interference analysis (1984)
    Springer
    Applied physics 35 (1984), S. 27-34 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 07.65G ; 42.85 ; 68.48 ; 68.55 ; 73.60F ; 78.30 ; 78.65
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Infrared reflectivity measurements on vapour phase grownn-GaAs epitaxial layers (n=7×1016...5×1018 cm−3) deposited on semi-insulating GaAs:Cr substrates show interference structures whose strength cannot be explained by the interference pattern of a simple two layer system. Assuming a third very thin (0.4 μm) interfacial layer it is possible to describe the experimental results. For Te doping the carrier concentration in the interfacial film is higher than in the volume of the epitaxial layer; it is lower for Sn doping. The results of this nondestructive optical method were confirmed by conductivity measurements while etching the sample. The origin of the interfacial layer is discussed in terms of non-steady state conditions at the beginning of the epitaxial growth.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00620296
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  • 6
    Digitale Medien
    Digitale Medien
    Au gettering by Ne and Ar implantation in silicon (1984)
    Springer
    Applied physics 35 (1984), S. 119-124 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 61.70 ; 66 ; 85.30 ; 79.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The gettering efficiency for Au induced by Ne+ and Ar+ implantation has been studied. The depth distribution of gettered Au as a function of annealing temperature and dose of implanted Ne+ and Ar+ ions are presented. The experiment shows that the maximum efficiency of gettering occurs when the implantation doses are comparable with amorphization dose.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00620641
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  • 7
    Digitale Medien
    Digitale Medien
    Dynamic RHEED observations of the MBE growth of GaAs (1984)
    Springer
    Applied physics 34 (1984), S. 179-184 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 68.55
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Detailed measurements have been made of the specular beam intensity in RHEED patterns from static and growing GaAs surfaces. The basic parameters investigated were substrate temperature and electron beam azimuth. The results have provided further understanding of growth dynamics and surface disorder, respectively. There is a significant trend away from two-dimensional growth at the higher temperatures, which also correspond to more Ga-rich surface structures. Conversely, surface disorder is apparently greater during growth at the lower temperatures, where the structure is As-rich. The static As-stable 2×4 surface is, however, the most ordered and the most closely two-dimensional. It has also been shown that ordered, two-dimensional growth can be initiated from excess Ga adatom populations.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00616915
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  • 8
    Digitale Medien
    Digitale Medien
    Controlled doping of rf sputtered germanium films (1984)
    Springer
    Applied physics 34 (1984), S. 117-121 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 68.55 ; 73.60
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Germanium films have been rf sputter deposited on a variety of substrates. A new techniques has been developed to control doping concentrations of the films at predetermined levels for bothp-type as well asn-type films. The hole concentrations of these films could be varied from 1015 to 2×1018/cm3 while the electron concentrations could be varied from 1015 to 5×1017/cm3 using this technique. Transmission electron microscope studies have been made to study the crystalline quality of the films.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00614763
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  • 9
    Digitale Medien
    Digitale Medien
    Disclosure of defects in YAG crystals by the thermoluminescence method (1984)
    Springer
    Applied physics 35 (1984), S. 249-253 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 61.70 ; 61.80 ; 71.35 ; 78.55
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The topograms revealing the anisotropic distribution of defects in the volume of monocrystalline YAG samples have been obtained by the thermoluminescence (TL) technique. It has also been shown that the anisotropic distribution of the lattice defects affects strongly the shape of the TL curves. The greatest changes in the TL intensity were observed in the areas of the samples distributed symmetrically every 120°. It was noted that the selective distribution of the TL intensity is caused mainly by the presence of the (211) facets as well as growth striations formed during the growth process. The groups of lines observed in the TL spectrum have been ascribed to the Tb3+ ions, excited owing to the radiationless energy transfer from the bound exciton states (BES).
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00617175
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  • 10
    Digitale Medien
    Digitale Medien
    Time-resolved defect production and annealing during electron-beam processing of silicon (1984)
    Springer
    Applied physics 33 (1984), S. 251-254 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 61.70 ; 61.80
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract In (100)p-Si radiation damage was produced by implanting B+ ions with an energy of 80keV, 90keV and 1.6MeV. The specimens were annealed by scanned electronbeam irradiation (20keV, 1–2mAcm−2). The formation, evolution and annihilation of defects during the irradiation process were investigated by employing DLTS and RBS measuring techniques. The results show a minimum of defect concentration and an efficiency of the electrical activation of B higher than 80% at an annealing time of 4.5 s. For irradiation times longer than 5 s it becomes evident, that the crystal surface acts as source of defects and contributes to an increase in defect concentration.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00614667
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