ISSN:
1432-0630
Schlagwort(e):
72.40
;
73.60
;
78.60
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Maschinenbau
,
Physik
Notizen:
Abstract Microcrystalline and amorphous hydrogenated silicon films were preparaed by rf planar magnetron sputtering in the four kinds of inert gas, i.e., He, Ne, Ar, and Kr. The dependence of such properties as x-ray diffraction, ir spectra, absorption coefficient, hydrogen content, dark conductivity and photoconductivity on the kind of inert gas was investigated. Such deposition conditions as hydrogen partial pressure, sputtering pressure and rf power were also studied mainly in relation to the microcrystallization of the films. Microcrystalline films with noticeably high deposition rate could be obtained in the case of Kr and Ar, compared to the case of He and Ne. Hydrogen concentration was found to correlate to the photoconductivity and activation energy of dark conductivity except for the case of He. Photosensitivity was appreciably larger for amorphous film than for microcrystalline one. Especially in the case of Kr, it was considerably larger than in other cases.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1007/BF00617174
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