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  • Articles  (14)
  • 73.60  (14)
  • Springer  (14)
  • American Chemical Society (ACS)
  • American Geophysical Union
  • National Academy of Sciences
  • 2005-2009
  • 1990-1994  (3)
  • 1980-1984  (11)
  • 2017
  • 1991  (3)
  • 1984  (11)
  • Physics  (14)
  • Nature of Science, Research, Systems of Higher Education, Museum Science
Collection
  • Articles  (14)
Source
Keywords
Publisher
  • Springer  (14)
  • American Chemical Society (ACS)
  • American Geophysical Union
  • National Academy of Sciences
Years
  • 2005-2009
  • 1990-1994  (3)
  • 1980-1984  (11)
Year
Topic
  • 1
    Electronic Resource
    Electronic Resource
    Kinetic limitations to surface segregation during MBE growth of III–V compounds: Sn in GaAs (1984)
    Springer
    Applied physics 33 (1984), S. 87-92 
    Details
    ISSN: 1432-0630
    Keywords: 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The incorporation of Sn as a dopant in GaAs has been studied in the temperature range of 500°–650° C, over a wide range of Ga and As fluxes, the latter being incident as either As4 or As2 molecules. The results are explained in terms of a surface segregation model in which the behaviour at high growth temperatures (above ∼600 °C) approaches thermal equilibrium, but growth at lower temperatures involves a kinetic limitation to the segregation process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617613
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  • 2
    Electronic Resource
    Electronic Resource
    Ion-beam mixing kinetics of Fe-Al multilayers studied by in situ electrical resistivity measurements (1984)
    Springer
    Applied physics 33 (1984), S. 77-82 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 72.15 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The ion-beam mixing of Fe-Al evaporated multiple-layer films has been investigated by measuring continuously the electrical resistivity of the samples during the bombardment. The experimental curves exhibit a tendency toward a saturation process and allow the determination of the critical dose corresponding to the total mixing of the multiple-layer film. The variations of the volume fraction of intermixed atoms as a function of the ion dose have been deduced and a semi-empirical model is proposed to explain the observed kinetics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617611
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  • 3
    Electronic Resource
    Electronic Resource
    Formation of a metallic layer from individual atoms (1984)
    Springer
    Applied physics 33 (1984), S. 213-225 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Adsorption of copper, gold and beryllium on (110), (100), and (211) single-crystal planes of tungsten leads to essentially different work-function changes. It is known from numerous investigations of alkali-metal adsorption on metal substrates that the work-function variation reflects the electronic processes occurring during the formation of the adlayer. It is obvious that copper, gold and beryllium adsorption is accompanied by a wide variety of physical processes different from those appearing in alkali-metal adsorption. The existing experimental data concerning work-function changes induced by copper, gold and beryllium adsorption are compiled. A model is developed, which may explain these changes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614661
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  • 4
    Electronic Resource
    Electronic Resource
    On the annealing behaviour of the Staebler-Wronski effect ina-Si:H (1984)
    Springer
    Applied physics 35 (1984), S. 9-12 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The kinetics of the Staebler-Wronski effect ina-Si:H were investigated experimentally. The rate of recovery from the illuminated state B to the annealed state A was observed at various temperatures in undoped,n- andp-dopeda-Si:H. The data can be characterized by a thermally activated relaxation time with an activation energy decreasing with increasing doping concentration. The results are compared with previous data and existing models.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620293
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  • 5
    Electronic Resource
    Electronic Resource
    Far-infrared donor spectroscopy of MBE-GaAs (1984)
    Springer
    Applied physics 33 (1984), S. 83-85 
    Details
    ISSN: 1432-0630
    Keywords: 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Magneto-optical spectra of shallow donors in MBE-GaAs were measured in the far-infrared using Fourier transform spectroscopy. In the purest sample (N I=9×1014cm−3) silicon was observed to be the dominating donor impurity. In a less pure sample sulfur was observed to dominate. The increase of the purity and the elimination of the sulfur contamination was correlated with the change from water cooling to liquid nitrogen cooling of the cooling shrouds around the effusion cells. An increase of the growth temperature was probably also one reason for the increase of the purity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617612
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  • 6
    Electronic Resource
    Electronic Resource
    Attenuation length of monoenergetic electrons photoinjected into the NaCl layer (1984)
    Springer
    Applied physics 34 (1984), S. 67-68 
    Details
    ISSN: 1432-0630
    Keywords: 79.40 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A new, precise photoelectric method of electron attenuation length measurement in alkali halides is proposed and experimentally verified. The obtained results confirm the Llacer-Garwin theory of electron-phonon interactions in these substances.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617576
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  • 7
    Electronic Resource
    Electronic Resource
    Dependence of properties of hydrogenated microcrystalline and amorphous silicon films prepared by planar magnetron sputtering in inert gas (1984)
    Springer
    Applied physics 35 (1984), S. 241-247 
    Details
    ISSN: 1432-0630
    Keywords: 72.40 ; 73.60 ; 78.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Microcrystalline and amorphous hydrogenated silicon films were preparaed by rf planar magnetron sputtering in the four kinds of inert gas, i.e., He, Ne, Ar, and Kr. The dependence of such properties as x-ray diffraction, ir spectra, absorption coefficient, hydrogen content, dark conductivity and photoconductivity on the kind of inert gas was investigated. Such deposition conditions as hydrogen partial pressure, sputtering pressure and rf power were also studied mainly in relation to the microcrystallization of the films. Microcrystalline films with noticeably high deposition rate could be obtained in the case of Kr and Ar, compared to the case of He and Ne. Hydrogen concentration was found to correlate to the photoconductivity and activation energy of dark conductivity except for the case of He. Photosensitivity was appreciably larger for amorphous film than for microcrystalline one. Especially in the case of Kr, it was considerably larger than in other cases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617174
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  • 8
    Electronic Resource
    Electronic Resource
    Controlled doping of rf sputtered germanium films (1984)
    Springer
    Applied physics 34 (1984), S. 117-121 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Germanium films have been rf sputter deposited on a variety of substrates. A new techniques has been developed to control doping concentrations of the films at predetermined levels for bothp-type as well asn-type films. The hole concentrations of these films could be varied from 1015 to 2×1018/cm3 while the electron concentrations could be varied from 1015 to 5×1017/cm3 using this technique. Transmission electron microscope studies have been made to study the crystalline quality of the films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614763
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  • 9
    Electronic Resource
    Electronic Resource
    Surface and bulk electrical properties of the hematite phase Fe2O3 (1991)
    Springer
    Applied physics 53 (1991), S. 310-316 
    Details
    ISSN: 1432-0630
    Keywords: 68.00 ; 72.00 ; 72.20 ; 73.30 ; 73.40 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Electrical properties of Fe2O3 were studied by using several electrical methods such as electrical conductivity, thermopower (Seebeck effect) and work function. The studies were performed at elevated temperatures (1053–1153 K) and under controlled oxygen activity (102∓105 Pa). Samples of different thickness varying between 103 nm and 1 mm were taken for the measurements of both electrical conductivity and thermopower. It has been found that the exponent of the po2 dependence resulting from the work function measurements (1/n φ) is about 1/2. Both thermopower and electrical conductivity data are well consistent with work function data for the thin film (1000 nm) of Fe2O3. The charge transport in Fe2O3 has been interpreted in terms of small polaron mechanism. Analysis of measured electrical parameters, regarding the thickness of studied specimens, indicates that the near-surface layer of Fe2O3 exhibits much higher deviation from stoichiometry than the bulk phase and resulting strong interaction between charge carriers. This effect has been interpreted in terms of segregation of intrinsic lattice defects to the surface, and presumably also to grain boundaries, of Fe2O3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00357193
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  • 10
    Electronic Resource
    Electronic Resource
    Hall mobility of evaporated InAs films prepared at different temperatures (1984)
    Springer
    Applied physics 34 (1984), S. 69-71 
    Details
    ISSN: 1432-0630
    Keywords: 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The behaviour of the Hall mobilityμ H and the carrier concentrationn have been investigated on InAs films as a function of thickness, substrate temperature and annealing treatment. While the Hall mobility showed an increasing trend with substrate temperature and thickness for both as-deposited and annealed films, the carrier concentration for asdeposited films showed a maximum at a particular substrate temperature range while that for annealed films showed a monotonous decreasing behaviour.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617577
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