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  • Articles  (11)
  • 61.70  (11)
  • Springer  (11)
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  • 1980-1984  (11)
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  • 1983  (11)
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  • Articles  (11)
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  • Springer  (11)
  • American Chemical Society (ACS)
  • American Geophysical Union
  • Institute of Physics
  • International Union of Crystallography
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  • 2015-2019
  • 2005-2009
  • 1990-1994
  • 1980-1984  (11)
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  • 1
    Electronic Resource
    Electronic Resource
    Vacancy noise measurements in metals: Calculation of the power spectrum (1983)
    Springer
    Applied physics 30 (1983), S. 117-122 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 72.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Fluctuations in the number of vacancies in metals in thermal equilibrium lead to resistivity fluctuations. Analysis of these fluctuations permits measurement of both formation and migration enthalpy of the vacancies. The power spectrum of the fluctuations is calculated using a series of statistically independent pulses. It can be derived from the diffusion equation for any geometry of the vacancy sinks. Vacancy diffusion to the surface of a thin plate or of a sphere are treated as examples. The measurability of vacancy noise is assessed. It should also be possible to measure vacancy noise during irradiation. It is predicted that correlated vacancy creation, which may occur during irradiation, will cause an increase in the power spectrum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614913
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  • 2
    Electronic Resource
    Electronic Resource
    Proton conductivity in the layer compound H3OUO2AsO4·3H2O (HU As) (1983)
    Springer
    Applied physics 32 (1983), S. 45-53 
    Details
    ISSN: 1432-0630
    Keywords: 66.33 ; 61.70 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The proton conductivity in H3OUO2AsO4·3H2O (HUAs) has been measured below the transition temperature at 299 K. A consistent picture of the elementary process taking place is developed from separate electrochemical, spectroscopic and calorimetric measurements. The conductivity is proposed to occur by the “vehicle mechanism” of proton transport, i.e. the cooperative motion of H3O+ and H2O. This mechanism is compared with the Grotthuss and the simple ion hopping mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617828
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  • 3
    Electronic Resource
    Electronic Resource
    Non-equilibrium dopants incorporation in silicon melted by laser pulses (1983)
    Springer
    Applied physics 30 (1983), S. 195-211 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 81.10 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The rapid solidification of silicon layers melted by high-power laser pulses lead to an enhanced incorporation of implanted dopants in substitutional lattice sites. A review of experimental results, heat and mass transport calculations, is presented together with the latest models for solute redistribution during rapid solidification. Interfacial instabilities, leading to cell structure and other factors limiting the maximum concentration of incorporated dopants are also presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614767
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  • 4
    Electronic Resource
    Electronic Resource
    Arsenic antisite defects as the main electron traps in plastically deformed GaAs (1983)
    Springer
    Applied physics 30 (1983), S. 233-235 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 71.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract It is found from DLTS measurements that plastic deformation of GaAs single crystal creates a new kind of electron traps with an activation energy of 0.37 eV, and gives rise to an increase in the concentration of main electron traps with an energy of 0.80 eV. By comparing the concentrations of the main electron traps before and after deformation with analogous concentrations of AsGa paramagnetic centers, found by EPR experiments, it is concluded that the centers observed in both cases are of the same origin. A nonstandard feature of the main traps is discovered: linear dependence of the DLTS-peak amplitude on the logarithm of the filling-pulse duration time. This feature can be explained in terms of the barrier-limited capture rate, assuming the traps are arranged in rows.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614772
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  • 5
    Electronic Resource
    Electronic Resource
    Proton conductivity in the layer compound H3OUO2AsO4·3H2O (HU As) (1983)
    Springer
    Applied physics 32 (1983), S. 155-158 
    Details
    ISSN: 1432-0630
    Keywords: 66.30 ; 61.70 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The proton conductivity in tetragonal H3OUO2AsO4·(3-δ)H2O has been measured above the transition temperature at 299 K. The conductivity, calorimetric and spectroscopic data depend on the water content and the transition is suggested to be a peritectic reaction setting free a small amount of solution, which stays strongly adsorbed between the layers of the structure and gives rise to the high conductivity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616611
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  • 6
    Electronic Resource
    Electronic Resource
    Low-power multi-pulse laser annealing of α-Ge (1983)
    Springer
    Applied physics 30 (1983), S. 161-167 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In this paper we want to show by means of Reflection High Energy Electron Diffraction (RHEED) techniques that the recrystallization processes taking place on amorphous germanium films irradiated with low-power superimposed ruby laser pulses occur gradually. Furthermore, in implanted α-Ge films the amorphous-crystalline front moves from the surface of the specimen towards the substrate, while the opposite occurs for glow-discharge deposited films. Moreover, electron microscope observations carried out with a double-stage carbon replica technique at different depths in the specimen show that defect migration is one of the competitive mechanisms in low-power laser annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620535
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  • 7
    Electronic Resource
    Electronic Resource
    The X-ray diffraction intensity of cyclically loaded Al (1983)
    Springer
    Applied physics 30 (1983), S. 123-126 
    Details
    ISSN: 1432-0630
    Keywords: 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The displacement field around a dislocation loop had been calculated to give the diminishing factor of X-ray diffraction intensity from a fatigued Al sample. Experimentally had been measured this factor on the samples fatigued at room temperature and at low temperature. From these the size and density of dislocation loops can be deduced. Results show that in the sample fatigued at room temperature there is no significant change in dislocation structure while at low temperature in fatigued sample occurs a large amount of dislocation loops whose density is 1014−1017cm−3 while their radii are between 100 and 1000 Å.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614914
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  • 8
    Electronic Resource
    Electronic Resource
    On the nature of point defects and the effect of oxidation on substitutional dopant diffusion in silicon (1983)
    Springer
    Applied physics 31 (1983), S. 97-108 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An extensive analysis of the substitutional dopant diffusion phenomena in silicon during oxidation is presented. The analysis covers qualitative as well as quantitative aspects of the oxidation-enhanced and -retarded diffusion (OED and ORD) phenomena, and examines three different possible assumptions that can be made on the nature of the silicon thermal equilibrium point defect species: silicon self-interstitials (I) only, vacancies (V) only, coexistence of I and V. The only consistent way to interpret all properly documented OED/ORD data is to assume that I and V coexist under oxidation as well as under thermal equilibrium conditions at high temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616312
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  • 9
    Electronic Resource
    Electronic Resource
    Generation of dislocations introduced by bending stress in a Si wafer (1983)
    Springer
    Applied physics 31 (1983), S. 109-114 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Distribution and morphology for dislocations introduced in (001) Si wafers subjected to bending stress at 800°, 900°, and 1100°C were investigated. For wafers bent around a [110] axis at 900° and 1100°C, straight dislocations appeared along the [110] direction only near the neutral plane, and were absent at the surfaces where bending stress is greatest. However, for wafers bent at 800 °C, such straight dislocations were not formed. Dependence of the dislocation distribution and morphology on heat treatment temperature is explained on the basis of interaction between bending stress and SiO2 precipitates introduced in bulk. Also, it was found that the straight [110] dislocations remained still near the neutral plane, even when additional reverse bending stress was applied around an axis parallel to the dislocations, but were transfered toward the tensile surface by bending around an axis normal to the dislocation direction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616313
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  • 10
    Electronic Resource
    Electronic Resource
    The lanthanideβ″ aluminas (1983)
    Springer
    Applied physics 32 (1983), S. 159-161 
    Details
    ISSN: 1432-0630
    Keywords: 66.30 ; 61.70 ; 42.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The entire sodium ion content of sodiumβ″ alumina (Na1.67Mg0.67Al10.33O17) can be replaced with a variety of lanthanide ions by simple diffusion reactions at moderate temperatures (500–700°C). Lanthanideβ″ alumina crystals are hard, clear, chemically stable, and have well-defined crystal structures. The fluorescence spectrum of Nd3+ inβ″ alumina is similar to that in YAG. The lifetime of the4 F 3/2 state of Nd3+ in completely-exchangedβ″ alumina (350μs at 1021 Nd3+ cm−3) is about 45% longer than in YAG (240μs at 1020Nd3+ cm−3). The lanthanideβ″ aluminas may be of considerable interest as new phosphor and laser host materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616612
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