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  • Artikel  (27)
  • 61.70  (27)
  • 1985-1989  (16)
  • 1980-1984  (11)
  • 1925-1929
  • 1989  (16)
  • 1983  (11)
  • Maschinenbau  (27)
  • Mathematik
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  • Artikel  (27)
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  • 1985-1989  (16)
  • 1980-1984  (11)
  • 1925-1929
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  • Maschinenbau  (27)
  • Mathematik
  • Physik  (29)
  • 1
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 30 (1983), S. 117-122 
    ISSN: 1432-0630
    Schlagwort(e): 61.70 ; 72.70
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Fluctuations in the number of vacancies in metals in thermal equilibrium lead to resistivity fluctuations. Analysis of these fluctuations permits measurement of both formation and migration enthalpy of the vacancies. The power spectrum of the fluctuations is calculated using a series of statistically independent pulses. It can be derived from the diffusion equation for any geometry of the vacancy sinks. Vacancy diffusion to the surface of a thin plate or of a sphere are treated as examples. The measurability of vacancy noise is assessed. It should also be possible to measure vacancy noise during irradiation. It is predicted that correlated vacancy creation, which may occur during irradiation, will cause an increase in the power spectrum.
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 32 (1983), S. 45-53 
    ISSN: 1432-0630
    Schlagwort(e): 66.33 ; 61.70 ; 82.65
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The proton conductivity in H3OUO2AsO4·3H2O (HUAs) has been measured below the transition temperature at 299 K. A consistent picture of the elementary process taking place is developed from separate electrochemical, spectroscopic and calorimetric measurements. The conductivity is proposed to occur by the “vehicle mechanism” of proton transport, i.e. the cooperative motion of H3O+ and H2O. This mechanism is compared with the Grotthuss and the simple ion hopping mechanism.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 48 (1989), S. 3-9 
    ISSN: 1432-0630
    Schlagwort(e): 61.70 ; 71
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Molecule-like defects in crystalline semiconductors can display bistable properties when two different structural arrangements are possible for constant charge on the defects. This introductory paper will review the physical and technical aspects of this new field of research. It also includes a detailed presentation of our experimental studies on the recently discovered bistable thermal donor defect in silicon.
    Materialart: Digitale Medien
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  • 4
    ISSN: 1432-0630
    Schlagwort(e): 61.70 ; 78.30 ; 72.40
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Shallow thermal donors are electrically active oxygen-related thermally formed defects observed in oxygen-rich silicon annealed between 300 ° and 600 ° C. Seven donors have been identified with an average central-cell correction of only 5 meV. In view of their molecule-like nature this close agreement to the effective mass theory prediction for a hydrogen-like donor in silicon is of interest. It is shown that these centres are not correlated to the residual impurities phosphorus and boron but rather to the presence of nitrogen. Nitrogen-doped oxygen-rich samples show increased shallow thermal donor growth and a reduction in the growth of other oxygen-related donors in comparison to normally nitrogen-undoped oxygen-rich samples. A reduction in shallow thermal donor concentration at high nitrogen concentrations is reported.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 30 (1983), S. 195-211 
    ISSN: 1432-0630
    Schlagwort(e): 61.70 ; 81.10 ; 66.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The rapid solidification of silicon layers melted by high-power laser pulses lead to an enhanced incorporation of implanted dopants in substitutional lattice sites. A review of experimental results, heat and mass transport calculations, is presented together with the latest models for solute redistribution during rapid solidification. Interfacial instabilities, leading to cell structure and other factors limiting the maximum concentration of incorporated dopants are also presented.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 30 (1983), S. 233-235 
    ISSN: 1432-0630
    Schlagwort(e): 61.70 ; 71.55
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract It is found from DLTS measurements that plastic deformation of GaAs single crystal creates a new kind of electron traps with an activation energy of 0.37 eV, and gives rise to an increase in the concentration of main electron traps with an energy of 0.80 eV. By comparing the concentrations of the main electron traps before and after deformation with analogous concentrations of AsGa paramagnetic centers, found by EPR experiments, it is concluded that the centers observed in both cases are of the same origin. A nonstandard feature of the main traps is discovered: linear dependence of the DLTS-peak amplitude on the logarithm of the filling-pulse duration time. This feature can be explained in terms of the barrier-limited capture rate, assuming the traps are arranged in rows.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 32 (1983), S. 155-158 
    ISSN: 1432-0630
    Schlagwort(e): 66.30 ; 61.70 ; 82.65
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The proton conductivity in tetragonal H3OUO2AsO4·(3-δ)H2O has been measured above the transition temperature at 299 K. The conductivity, calorimetric and spectroscopic data depend on the water content and the transition is suggested to be a peritectic reaction setting free a small amount of solution, which stays strongly adsorbed between the layers of the structure and gives rise to the high conductivity.
    Materialart: Digitale Medien
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  • 8
    ISSN: 1432-0630
    Schlagwort(e): 61.70 ; 66.30 ; 85.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract In- and out-diffusion experiments of oxygen in silicon indicate the existence of an oxygen-containing species diffusing much faster than interstitial oxygen at temperatures below about 700°C. The formation of oxygen-related thermal donors in the temperature range around 450°C also requires a fast diffusing species. The paper examines the possibility of this fast diffusing species beingmolecular oxygen, as had been suggested earlier. Special emphasis will be placed on experimental results which have become available since that time. These results allow one to relate thermal donor formation to the loss of interstitial oxygen and to oxygen precipitation. The role of carbon is also considered in this context.
    Materialart: Digitale Medien
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  • 9
    ISSN: 1432-0630
    Schlagwort(e): 61.70 ; 61.80
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Transient enhanced diffusion of phosphorus in silicon has been investigated for implants below and above the threshold for a complete amorphization. Rapid thermal processes (electron beam) and conventional furnaces have been used for the annealing. In the case of implants below amorphization, a strong enhanced diffusion, proportional to the amount of damage produced, has been observed. The extent of the phenomenon is practically independent of the damage depth position. In contrast to this, the formation of extended defects at the original amorphous-crystalline interface makes the diffusivity strongly dependent on depth in the case of post-amorphized samples. No enhanced diffusion effect is observed if the dopant is confined in the amorphous layer, while a remarkable increase in the diffusivity is detected for the dopant located in the crystalline region beyond the amorphous-crystalline interface. Damage distribution after implantation and its evolution during annealing have been determined by double crystal x-ray diffraction and correlated to anomalous P diffusivity. A qualitative distribution of the interstitial excess in solution in the silicon lattice during annealing is proposed for the two different cases. These point defects, released by the dissolution of the interstitial clusters produced by the implanted ions, have been identified as responsible for the observed enhanced P diffusion.
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 48 (1989), S. 233-236 
    ISSN: 1432-0630
    Schlagwort(e): 06 ; 07 ; 61.70
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract A novel method is presented for measuring the spectral density of resistance fluctuations without the explicit determination of the voltage background noise (Johnson noise, pre-amplifier noise). The output of a standard ac bridge excited by a single-frequency alternating current is demodulated by two phase-sensitive detectors which operate in quadrature. When the phase difference between excitation and detection is properly set, the real part of the cross-spectral density of the two demodulators shows only the spectral density of the resistance fluctuations and not the disturbing background noise. The feasibility of our new method is demonstrated by measurements of 1/f noise of a thin-film A1 sample.
    Materialart: Digitale Medien
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  • 11
    ISSN: 1432-0630
    Schlagwort(e): 61.70 ; 61.80 ; 78.70
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Positron-annihilation lifetime and Doppler-broadening measurements are used to investigate defects in silicon irradiated at 373 K with 6 MeV electrons to a dose of 1×l019e/cm2. In the unirradiated silicon sample (p type) a temperature-independent behaviour of the bulk-lifetime is observed in the temperature interval 110–500 K with a constant value of 220±1 ps. The slight effect observed on the S-parameter evolution is explained taking into account the thermal expansion of the lattice. The lifetime results obtained at 80 K and at 300 K after isochronal annealing as well as the behaviour of the intensity of the second lifetime componentI 2 during lifetime measurements below the irradiation temperature in the irradiated silicon sample (n type), clearly indicate the temperature dependent characteristics of the positron trapping cross section σt(T) ∝T n withn= −1.905±0.016. From isochronal annealing results, an annealing stage is observed in which di-vacancies agglomerate into quadri-vacancies. The mean positron lifetime in those quadri-vacancies is 350 ps.
    Materialart: Digitale Medien
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  • 12
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 30 (1983), S. 161-167 
    ISSN: 1432-0630
    Schlagwort(e): 61.70 ; 61.80 ; 68.55
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract In this paper we want to show by means of Reflection High Energy Electron Diffraction (RHEED) techniques that the recrystallization processes taking place on amorphous germanium films irradiated with low-power superimposed ruby laser pulses occur gradually. Furthermore, in implanted α-Ge films the amorphous-crystalline front moves from the surface of the specimen towards the substrate, while the opposite occurs for glow-discharge deposited films. Moreover, electron microscope observations carried out with a double-stage carbon replica technique at different depths in the specimen show that defect migration is one of the competitive mechanisms in low-power laser annealing.
    Materialart: Digitale Medien
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  • 13
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 48 (1989), S. 431-436 
    ISSN: 1432-0630
    Schlagwort(e): 72.20J ; 61.70
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract A spectroscopic analysis by the light-beam-induced-current technique has been carried out to study the electrical properties of stacking faults in Czochralski silicon subjected to internal gettering treatments. By changing the wavelength of the light beam probing the sample, we have obtained the depth profiling of the stacking fault electrical activity. Occurrence of minority carrier recombination and generation processes at some stacking faults, corresponding, respectively, to dark and bright levels in a grey-shade imaging, has been observed. The presence of fixed charges at the defect-silicon matrix interface is hypothesized as a possible cause of the observed images.
    Materialart: Digitale Medien
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  • 14
    ISSN: 1432-0630
    Schlagwort(e): 66.30 ; 61.70
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract We proposed a model to correlate, in a continuous manner, the composition dependence of electrical properties and the progressive extension of clusterization when the substitution rate increases in a fluoride anion excess CaF2-type solid solution of M1−xM x ′2+α F2+αx(α=1,2,3). A new classification of clusters is given based on the presence or absence of coexistence between two types of interstitial fluoride ions. The second part of the paper is devoted to the representation of the sum of interstitial fluoride ionsn F int and the sum of vacancies in normal sitesn □ according to the general equationy=(mx 3+λqx)/(x 2+q). This model allows us to correlate the structural and electrical properties of a large number of solid solutions with fluorite-type structure.
    Materialart: Digitale Medien
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  • 15
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 49 (1989), S. 33-40 
    ISSN: 1432-0630
    Schlagwort(e): 66.30 ; 81.40 ; 81.60 ; 61.70
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The potential application of ion implantation to modify the surfaces of ceramic materials is discussed. Changes in the chemical composition and microstructure result in important variations of the electrical and catalytic properties of oxides.
    Materialart: Digitale Medien
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  • 16
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 30 (1983), S. 123-126 
    ISSN: 1432-0630
    Schlagwort(e): 61.70
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The displacement field around a dislocation loop had been calculated to give the diminishing factor of X-ray diffraction intensity from a fatigued Al sample. Experimentally had been measured this factor on the samples fatigued at room temperature and at low temperature. From these the size and density of dislocation loops can be deduced. Results show that in the sample fatigued at room temperature there is no significant change in dislocation structure while at low temperature in fatigued sample occurs a large amount of dislocation loops whose density is 1014−1017cm−3 while their radii are between 100 and 1000 Å.
    Materialart: Digitale Medien
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  • 17
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 31 (1983), S. 97-108 
    ISSN: 1432-0630
    Schlagwort(e): 61.70 ; 66.30 ; 85.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract An extensive analysis of the substitutional dopant diffusion phenomena in silicon during oxidation is presented. The analysis covers qualitative as well as quantitative aspects of the oxidation-enhanced and -retarded diffusion (OED and ORD) phenomena, and examines three different possible assumptions that can be made on the nature of the silicon thermal equilibrium point defect species: silicon self-interstitials (I) only, vacancies (V) only, coexistence of I and V. The only consistent way to interpret all properly documented OED/ORD data is to assume that I and V coexist under oxidation as well as under thermal equilibrium conditions at high temperatures.
    Materialart: Digitale Medien
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  • 18
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 31 (1983), S. 109-114 
    ISSN: 1432-0630
    Schlagwort(e): 61.70 ; 65
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Distribution and morphology for dislocations introduced in (001) Si wafers subjected to bending stress at 800°, 900°, and 1100°C were investigated. For wafers bent around a [110] axis at 900° and 1100°C, straight dislocations appeared along the [110] direction only near the neutral plane, and were absent at the surfaces where bending stress is greatest. However, for wafers bent at 800 °C, such straight dislocations were not formed. Dependence of the dislocation distribution and morphology on heat treatment temperature is explained on the basis of interaction between bending stress and SiO2 precipitates introduced in bulk. Also, it was found that the straight [110] dislocations remained still near the neutral plane, even when additional reverse bending stress was applied around an axis parallel to the dislocations, but were transfered toward the tensile surface by bending around an axis normal to the dislocation direction.
    Materialart: Digitale Medien
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  • 19
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 32 (1983), S. 159-161 
    ISSN: 1432-0630
    Schlagwort(e): 66.30 ; 61.70 ; 42.60
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The entire sodium ion content of sodiumβ″ alumina (Na1.67Mg0.67Al10.33O17) can be replaced with a variety of lanthanide ions by simple diffusion reactions at moderate temperatures (500–700°C). Lanthanideβ″ alumina crystals are hard, clear, chemically stable, and have well-defined crystal structures. The fluorescence spectrum of Nd3+ inβ″ alumina is similar to that in YAG. The lifetime of the4 F 3/2 state of Nd3+ in completely-exchangedβ″ alumina (350μs at 1021 Nd3+ cm−3) is about 45% longer than in YAG (240μs at 1020Nd3+ cm−3). The lanthanideβ″ aluminas may be of considerable interest as new phosphor and laser host materials.
    Materialart: Digitale Medien
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  • 20
    ISSN: 1432-0630
    Schlagwort(e): 78.70 ; 61.70 ; 81
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract For the first time the positron lifetimes in polycrystalline tin have been measured as a function of temperature in the whole range from 80 K to the melting point. The temperature dependence of the mean lifetime could be divided into four regions which can be attributed to the depletion of shallow traps, normal thermal expansion, prevacancy effects, and trapping by vacancies, respectively. In one of the samples the phase transition fromβ- toα-Sn clearly could be detected at 230 K by a sharp increase in the mean lifetime.
    Materialart: Digitale Medien
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  • 21
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 49 (1989), S. 413-424 
    ISSN: 1432-0630
    Schlagwort(e): 66.30 ; 61.70 ; 85.80 ; 65.50
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract We review investigations of Cd1−xPbxF2 superionic properties and show examples of applications of these crystals. Results of a study of thermodynamic, electrical and Raman-scattering properties of Cd1−xPbxF2 crystals are presented. These crystals can be used to construct reversible electrochemical cells.
    Materialart: Digitale Medien
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  • 22
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 49 (1989), S. 83-89 
    ISSN: 1432-0630
    Schlagwort(e): 72.60 ; 85.80 ; 61.70
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The electrochemical characteristics and structural changes associated with discharge and charge of several tungstic acids such as H2WO4 and H2WO4 · H2O have been investigated. The suitability of these substances as new cathode materials for nonaqueous lithium batteries has been assessed. H2WO4, having only coordinated water molecules, showed a discharge capacity of about 410 Ah kg−1 of acid weight and a discharge potential around 2 V vs. Li/Li+. This capacity was much higher than the 40 ∼ 180 Ah kg−1 of anhydrous WO3. H2WO4 showed a good charge-discharge cycling behavior at a capacity below 1e −/W. However, the formation of a stable phase such as Li2WO4 during the cyclings limited the cycling number. In addition, the crystal structure of H2WO4 changed from orthorhombic to tetragonal during discharge, but the original layered lattice was kept on discharge to 1.5e −/W. On the other hand, a significant decrease in the layer spacing of H2WO4 · H2O took place with discharge, due to the direct interaction between the interlayer water molecule and the lithium inserted between the layers. In this paper, in particular, the effect of the coordinated and hydrated water molecules in the acid structure on the electrochemical behavior is discussed.
    Materialart: Digitale Medien
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  • 23
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 49 (1989), S. 25-31 
    ISSN: 1432-0630
    Schlagwort(e): 81.20 ; 66.30 ; 72.60 ; 61.70
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Zirconia-titania-yttria oxide solutions are novel mixed-electrical conductors in which both oxygen-ions and electrons are mobile. A determination of their electrical properties is necessary for an evaluation of their potential applications. Single-phase oxide solutions have been prepared and characterized. Phase studies indicates extensive solid solution of titania into zirconia stabilized with 12 mol % yttria. The observed decrease in lattice parameter with increasing titania concentration in these oxide solutions indicates that titanium cations substitute for the zirconium cations in the fluorite lattice. The lattice and grain-boundary electrical conductivities have been determined using impedance spectroscopy at temperatures between 400 and 950 °C.
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  • 24
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 49 (1989), S. 69-73 
    ISSN: 1432-0630
    Schlagwort(e): 77.40 ; 61.70 ; 66.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The fluorides of the rutile structure are relatively simple ionic materials with tetragonal symmetry for which the dominant intrinsic defect has not been established. The present experiments involve low-temperature dielectric relaxation measurements on Er3+-and Y3+-doped MnF2 single crystals. Unexpectedly, dielectric loss peaks were observed at cryogenic temperatures, involving very low activation energies,E. For both dopants a prominent peak is observed for samples oriented parallel to thec-axis withE ∼ 6 meV and in perpendicular orientations withE=37 meV for Er3+ and 46 meV for Y3+ doping. Such lowE-values are probably too small to be controlled by lattice migration of a defect. Rather, we expect that they are due to a very low symmetry configuration created when the ions near the defect move “off symmetry” to a more stable configuration. Computer simulation calculations have been carried out which are much improved over early studies of this system in terms of the code used and the F-F interatomic potentials. The results show that the energy per defect for the anion Frenkel (1.53 eV) is lower than that of the Schottky (1.99 eV). It was also shown that the fluorine interstitial, Fi, adopts a split-interstitial form. This defect associates strongly with trivalent dopants Er and Y to produce a low symmetry dipolar structure with the necessary off-symmetry configuration to explain the experimental findings. Since there is no alternative way to explain these low temperature relaxations in terms of impurities associated with Mn vacancies, as would be required by the Schottky model, we conclude that these experiments serve to establish the nature of the intrinsic defect in MnF2 as anion Frenkel.
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  • 25
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 49 (1989), S. 149-155 
    ISSN: 1432-0630
    Schlagwort(e): 61.70 ; 61.80
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The annealing behavior of secondary defects generated in 2 MeV B- and P-, and 1 MeV As-implanted (100) Si with a dose of 5×1014 ions/cm2 has been investigated after rapid thermal annealing (RTA) treatment using cross-sectional TEM observations. The results are compared with ones obtained by furnace annealing (FA) treatment. RTA is more effective than FA for the defect density reduction of deep defects existing beyond 2 μm depths from the surface in B- and P-implanted layers. However, when a dislocation loop diameter is close to the substrate surface, as in the case of As implantation, the loops climb up to the surface by 1250 °C RTA. Moreover, repeated RTA is effective for the suppression of secondary defect growth in B- and P-implanted layers, while there is no difference in defect density or configuration for As implantation between repeated and simple RTA.
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  • 26
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 49 (1989), S. 171-179 
    ISSN: 1432-0630
    Schlagwort(e): 74.70 ; 61.70 ; 63
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract A phenomenological macro-resonance-cell description of bonding in high-T c oxide superconductors based on some common structural features is proposed. In this description, the oxidation states of the cations on the lattice frame are assumed to be oscillating. The oxygen atoms are described as being in a “breathing mode” and coupling is assumed to exist between the CuO2 layers and the boundary (capping) layers in these quasi two-dimensional systems. The variation ofT c for different materials is attributed in part to the relative effectiveness of the coupling between different kinds of boundary layer(s). Peierl's deformation or Jahn-Teller effect assisted by lattice softening and possibly magnetic ordering is discussed in relation to high-T c superconductivity in these oxides.
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  • 27
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 49 (1989), S. 225-232 
    ISSN: 1432-0630
    Schlagwort(e): 66.30 ; 61.70 ; 82.45
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The dc electrical conductivity of rare-earth doped ceria has been measured as a function of temperature (300–600 K) and composition (0.05–15 mol% M2O3) on using the complex impedance technique. Five dopants have been selected, yttrium and the lanthanides Yb, Gd, Nd, and La. For all of them, the variations of the activation energy versus dopant concentration are similar and characterized by the existence of a minimum. This peculiar property can be understood if attractive interactions between immobile dopant ions and mobile oxygen vacancies are taken into account. From an analysis of the experimental results, it is concluded that this interaction extends at least to third or fourth nearest neighbors depending on the size and the electronic configuration of the dopant ion.
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